Patent application number | Description | Published |
20080198650 | Distortion Estimation And Cancellation In Memory Devices - A method for operating a memory ( | 08-21-2008 |
20080198652 | Memory Device Programming Using Combined Shaping And Linear Spreading - A method for data storage includes accepting data for storage in a memory ( | 08-21-2008 |
20080219050 | REDUCTION OF BACK PATTERN DEPENDENCY EFFECTS IN MEMORY DEVICES - A method for operating a memory that includes multiple analog memory cells includes storing data in the memory by writing first storage values to the cells, so as to cause the cells to hold respective electrical charge levels. After storing the data, second storage values are read from at least some of the cells, including at least one interfered cell that belongs to a group of cells. A Back Pattern Dependency (BPD) distortion caused by the electrical charge levels of one or more interfering cells in the group to at least one of the second storage values read from the at least one interfered cell is detected and canceled. The second storage values, including the at least one of the second storage values in which the BPD distortion was canceled, are processed so as to reconstruct the data. | 09-11-2008 |
20080282106 | DATA STORAGE WITH INCREMENTAL REDUNDANCY - A method for operating a memory includes encoding input data with an Error Correction Code (ECC) to produce input encoded data including first and second sections, such that the ECC is decodable based on the first section at a first redundancy, and based on both the first and the second sections at a second redundancy that is higher than the first redundancy. | 11-13-2008 |
20090024905 | COMBINED DISTORTION ESTIMATION AND ERROR CORRECTION CODING FOR MEMORY DEVICES - A method for operating a memory device ( | 01-22-2009 |
20090043951 | PROGRAMMING SCHEMES FOR MULTI-LEVEL ANALOG MEMORY CELLS - A method for data storage includes storing first data bits in a set of multi-bit analog memory cells at a first time by programming the memory cells to assume respective first programming levels. Second data bits are stored in the set of memory cells at a second time that is later than the first time by programming the memory cells to assume respective second programming levels that depend on the first programming levels and on the second data bits. A storage strategy is selected responsively to a difference between the first and second times. The storage strategy is applied to at least one group of the data bits, selected from among the first data bits and the second data bits. | 02-12-2009 |
20090091979 | RELIABLE DATA STORAGE IN ANALOG MEMORY CELLS IN THE PRESENCE OF TEMPERATURE VARIATIONS - A method for data storage includes programming a first group of analog memory cells at a first time at a known first temperature, so as to cause the analog memory cells in the first group to assume respective first analog storage values. Respective second analog storage values are read from the analog memory cells in the first group at a second time at which the analog memory cells are at a second temperature. A shift is estimated between the first analog storage values and the second analog storage values, and a memory access parameter is adjusted responsively to the estimated shift. A second group of the analog memory cells is accessed at the second temperature using the adjusted memory access parameter. | 04-09-2009 |
20090103358 | REDUCING PROGRAMMING ERROR IN MEMORY DEVICES - A method for storing data in an array ( | 04-23-2009 |
20090144600 | Efficient re-read operations from memory devices - A method for data storage includes storing data, which is encoded with an Error Correction Code (ECC), in a group of analog memory cells by writing respective first storage values to the memory cells in the group. After storing the data, respective second storage values are read from the memory cells in the group, and the read second storage values are processed so as to decode the ECC. | 06-04-2009 |
20090157964 | EFFICIENT DATA STORAGE IN MULTI-PLANE MEMORY DEVICES - A method for data storage includes initially storing a sequence of data pages in a memory that includes multiple memory arrays, such that successive data pages in the sequence are stored in alternation in a first number of the memory arrays. The initially-stored data pages are rearranged in the memory so as to store the successive data pages in the sequence in a second number of the memory arrays, which is less than the first number. The rearranged data pages are read from the second number of the memory arrays. | 06-18-2009 |
20090187803 | DECODING OF ERROR CORRECTION CODE USING PARTIAL BIT INVERSION - A method includes receiving an Error Correction Code (ECC) code word, which includes multiple encoded bits that represent data and have a bit order. Multiple subsets of the encoded bits are selected using a selection criterion that does not sequentially follow the bit order. For each subset in at least some of the multiple subsets, the bits in the subset are inverted and the code word having the inverted bits is decoded, so as to reconstruct the data. | 07-23-2009 |
20090213653 | PROGRAMMING OF ANALOG MEMORY CELLS USING A SINGLE PROGRAMMING PULSE PER STATE TRANSITION - A method for data storage in analog memory cells includes defining multiple programming states for storing data in the analog memory cells. The programming states represent respective combinations of more than one bit and correspond to respective, different levels of a physical quantity stored in the memory cells. The data is stored in the memory cells by applying to the memory cells programming pulses that cause the levels of the physical quantity stored in the memory cells to transition between the programming states, such that a given transition is caused by only a single programming pulse. | 08-27-2009 |
20090213654 | PROGRAMMING ANALOG MEMORY CELLS FOR REDUCED VARIANCE AFTER RETENTION - A method includes defining a nominal level of a physical quantity to be stored in analog memory cells for representing a given data value. The given data value is written to the cells in first and second groups of the cells, which have respective first and second programming responsiveness such that the second responsiveness is different from the first responsiveness, by applying to the cells in the first and second groups respective, different first and second patterns of programming pulses that are selected so as to cause the cells in the first and second groups to store respective levels of the physical quantity that fall respectively in first and second ranges, such that the first range is higher than and the second range is lower than the nominal level. The given data value is read from the cells at a later time. | 08-27-2009 |
20090240872 | MEMORY DEVICE WITH MULTIPLE-ACCURACY READ COMMANDS - A method for data storage includes defining at least first and second read commands for reading storage values from analog memory cells. The first read command reads the storage values at a first accuracy, and the second read command reads the storage values at a second accuracy, which is finer than the first accuracy. A condition is evaluated with respect to a read operation that is to be performed over a given group of the memory cells. One of the first and second read commands is selected responsively to the evaluated condition. The storage values are read from the given group of the memory cells using the selected read command. | 09-24-2009 |
20100091535 | ADAPTIVE ESTIMATION OF MEMORY CELL READ THRESHOLDS - A method for operating a memory ( | 04-15-2010 |
20100110787 | MEMORY CELL READOUT USING SUCCESSIVE APPROXIMATION - A method for operating a memory ( | 05-06-2010 |
20100115376 | AUTOMATIC DEFECT MANAGEMENT IN MEMORY DEVICES - A method for storing data in a memory ( | 05-06-2010 |
20100124088 | STORAGE AT M BITS/CELL DENSITY IN N BITS/CELL ANALOG MEMORY CELL DEVICES, M>N - A method for data storage includes accepting data for storage in a memory that includes multiple analog memory cells and supports a set of built-in programming commands. Each of the programming commands programs a respective page, selected from a group of N pages, in a subset of the memory cells. The subset of the memory cells is programmed to store M pages of the data, M>N, by performing a sequence of the programming commands drawn only from the set. | 05-20-2010 |
20100131826 | ESTIMATION OF NON-LINEAR DISTORTION IN MEMORY DEVICES - A method for operating a memory ( | 05-27-2010 |
20100131827 | MEMORY DEVICE WITH INTERNAL SIGNAP PROCESSING UNIT - A method for operating a memory ( | 05-27-2010 |
20100157641 | MEMORY DEVICE WITH ADAPTIVE CAPACITY - A method for data storage in a memory ( | 06-24-2010 |
20100157675 | PROGRAMMING ORDERS FOR REDUCING DISTORTION IN ARRAYS OF MULTI-LEVEL ANALOG MEMORY CELLS - A method for data storage includes predefining an order of programming a plurality of analog memory cells that are arranged in rows. The order specifies that for a given row having neighboring rows on first and second sides, the memory cells in the given row are programmed only while the memory cells in the neighboring rows on at least one of the sides are in an erased state, and that the memory cells in the given row are programmed to assume a highest programming level, which corresponds to a largest analog value among the programming levels of the cells, only after programming all the memory cells in the given row to assume the programming levels other than the highest level. Data is stored in the memory cells by programming the memory cells in accordance with the predefined order. | 06-24-2010 |
20100165689 | REJUVENATION OF ANALOG MEMORY CELLS - A method for data storage in a memory that includes multiple analog memory cells fabricated using respective physical media, includes identifying a group of the memory cells whose physical media have deteriorated over time below a given storage quality level. A rejuvenation process, which causes the physical media of the memory cells in the group to meet the given storage quality level, is applied to the identified group. Data is stored in the rejuvenated group of the memory cells. | 07-01-2010 |
20100165730 | READING MEMORY CELLS USING MULTIPLE THRESHOLDS - A method for operating a memory ( | 07-01-2010 |
20100195390 | MEMORY DEVICE WITH NEGATIVE THRESHOLDS - A method for data storage in a memory that includes a plurality of analog memory cells includes storing data in the memory by writing first storage values to the cells. One or more read reference levels are defined for reading the cells, such that at least one of the read reference levels is negative. After storing the data, second storage values are read from the cells using the read reference levels, so as to reconstruct the stored data. In another disclosed method, data is stored in the memory by mapping the data to first storage values selected from a set of the nominal storage values, and writing the first storage values to the cells. The set of nominal storage values is defined such that at least one of the nominal storage values is negative. | 08-05-2010 |
20100199150 | Data Storage In Analog Memory Cell Arrays Having Erase Failures - A method for data storage includes performing an erasure operation on a group of analog memory cells ( | 08-05-2010 |
20100220509 | Selective Activation of Programming Schemes in Analog Memory Cell Arrays - A method for data storage includes defining a first programming scheme that programs a group of analog memory cells while reducing interference caused by at least one memory cell that neighbors the group, and a second programming scheme that programs the group of the analog memory cells and does not reduce all of the interference reduced by the first programming scheme. One of the first and second programming schemes is selected based on a criterion defined with respect to the analog memory cells. Data is stored in the group of the analog memory cells using the selected programming scheme. | 09-02-2010 |
20100220510 | Optimized Selection of Memory Chips in Multi-Chips Memory Devices - A method includes accepting a definition of a type of multi-unit memory device ( | 09-02-2010 |
20110225472 | READING MEMORY CELLS USING MULTIPLE THRESHOLDS - A method for operating a memory ( | 09-15-2011 |
20120026788 | DISTORTION ESTIMATION AND CANCELLATION IN MEMORY DEVICES - A method for operating a memory ( | 02-02-2012 |
20120026789 | DISTORTION ESTIMATION AND CANCELLATION IN MEMORY DEVICES - A method for operating a memory ( | 02-02-2012 |
20120044762 | REJUVENATION OF ANALOG MEMORY CELLS - A method for data storage in a memory that includes multiple analog memory cells fabricated using respective physical media, includes identifying a group of the memory cells whose physical media have deteriorated over time below a given storage quality level. A rejuvenation process, which causes the physical media of the memory cells in the group to meet the given storage quality level, is applied to the identified group. Data is stored in the rejuvenated group of the memory cells. | 02-23-2012 |
20120159281 | AUTOMATIC DEFECT MANAGEMENT IN MEMORY DEVICES - A method for data storage in a memory including multiple memory cells arranged in blocks, includes storing first and second pages in respective first and second groups of the memory cells within a given block of the memory. A pattern of respective positions of one or more defective memory cells is identified in the first group. The second page is recovered by applying the pattern identified in the first group to the second group of the memory cells. | 06-21-2012 |
20120163079 | Programming Orders for Reducing Distortion Based on Neighboring Rows - A method for data storage includes predefining an order of programming a plurality of analog memory cells that are arranged in rows. The order specifies that for a given row having neighboring rows on first and second sides, the memory cells in the given row are programmed only while the memory cells in the neighboring rows on at least one of the sides are in an erased state, and that the memory cells in the given row are programmed to assume a highest programming level, which corresponds to a largest analog value among the programming levels of the cells, only after programming all the memory cells in the given row to assume the programming levels other than the highest level. Data is stored in the memory cells by programming the memory cells in accordance with the predefined order. | 06-28-2012 |
20120163080 | Reducing Distortion Using Joint Storage - A method for data storage includes predefining an order of programming a plurality of analog memory cells that are arranged in rows. The order specifies that for a given row having neighboring rows on first and second sides, the memory cells in the given row are programmed only while the memory cells in the neighboring rows on at least one of the sides are in an erased state, and that the memory cells in the given row are programmed to assume a highest programming level, which corresponds to a largest analog value among the programming levels of the cells, only after programming all the memory cells in the given row to assume the programming levels other than the highest level. Data is stored in the memory cells by programming the memory cells in accordance with the predefined order. | 06-28-2012 |
20120201078 | Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N - A method for data storage includes accepting data for storage in a memory that includes multiple analog memory cells and supports a set of built-in programming commands. Each of the programming commands programs a respective page, selected from a group of N pages, in a subset of the memory cells. The subset of the memory cells is programmed to store M pages of the data, M>N, by performing a sequence of the programming commands drawn only from the set. | 08-09-2012 |
20120224404 | ENHANCED PROGRAMMING AND ERASURE SCHEMES FOR ANALOG MEMORY CELLS - A method for data storage includes setting a group of analog memory cells to respective analog values by performing an iterative process that applies a sequence of pulses to the memory cells in the group. During the iterative process, a progress of the iterative process is assessed, and a parameter of the iterative process is modified responsively to the assessed progress. The iterative process is continued in accordance with the modified parameter. | 09-06-2012 |
20120224423 | PROGRAMMING AND ERASURE SCHEMES FOR ANALOG MEMORY CELLS - A method for data storage, in a memory that includes multiple analog memory cells, includes setting a parameter of an iterative process applied to a group of the memory cells based on one or more data values stored in at least one of the memory cells in the memory. The iterative process is performed in the group of the memory cells in accordance with the set parameter. | 09-06-2012 |
20120254696 | EFFICIENT RE-READ OPERATIONS IN ANALOG MEMORY CELL ARRAYS - A method for data storage includes storing data, which is encoded with an Error Correction Code (ECC), in a group of analog memory cells by writing respective first storage values to the memory cells in the group. After storing the data, respective second storage values are read from the memory cells in the group, and the read second storage values are processed so as to decode the ECC. Responsively to a failure in decoding the ECC, one or more of the second storage values that potentially caused the failure are identified as suspect storage values. Respective third storage values are re-read from a subset of the memory cells that includes the memory cells holding the suspect storage values. The ECC is re-decoded using the third storage values so as to reconstruct the stored data. | 10-04-2012 |
20120272122 | EFFICIENT RE-READ OPERATIONS IN ANALOG MEMORY CELL ARRAYS - A method for data storage includes storing data, which is encoded with an Error Correction Code (ECC), in a group of analog memory cells by writing respective first storage values to the memory cells in the group. After storing the data, respective second storage values are read from the memory cells in the group, and the read second storage values are processed so as to decode the ECC. Responsively to a failure in decoding the ECC, one or more of the second storage values that potentially caused the failure are identified as suspect storage values. Respective third storage values are re-read from a subset of the memory cells that includes the memory cells holding the suspect storage values. The ECC is re-decoded using the third storage values so as to reconstruct the stored data. | 10-25-2012 |
20120297270 | Programming Schemes for Multi-Level Analog Memory Cells - A method for data storage includes storing first data bits in a set of multi-bit analog memory cells at a first time by programming the memory cells to assume respective first programming levels. Second data bits are stored in the set of memory cells at a second time that is later than the first time by programming the memory cells to assume respective second programming levels that depend on the first programming levels and on the second data bits. A storage strategy is selected responsively to a difference between the first and second times. The storage strategy is applied to at least one group of the data bits, selected from among the first data bits and the second data bits. | 11-22-2012 |
20130007566 | Memory Device with Adaptive Capacity - A method for data storage in a memory that includes a plurality of analog memory cells includes estimating respective achievable storage capacities of the analog memory cells. The memory cells are assigned respective storage configurations defining quantities of data to be stored in the memory cells based on the estimated achievable capacities. The data is stored in the memory cells in accordance with the respective assigned storage configurations. The achievable storage capacities of the analog memory cells are re-estimated after the memory has been installed in a host system and used for storing the data in the host system. The storage configurations are modified responsively to the re-estimated achievable capacities. | 01-03-2013 |
20130121080 | Adaptive Estimation of Memory Cell Read Thresholds - A method for operating a memory ( | 05-16-2013 |
20130227231 | MEMORY DEVICE WITH INTERNAL SIGNAL PROCESSING UNIT - A method for operating a memory includes storing data in a plurality of analog memory cells that are fabricated on a first semiconductor die by writing input storage values to a group of the analog memory cells. After storing the data, multiple output storage values are read from each of the analog memory cells in the group using respective, different threshold sets of read thresholds, thus providing multiple output sets of the output storage values corresponding respectively to the threshold sets. The multiple output sets of the output storage values are preprocessed by circuitry that is fabricated on the first semiconductor die, to produce preprocessed data. The preprocessed data is provided to a memory controller, which is fabricated on a second semiconductor die that is different from the first semiconductor die. so as to enable the memory controller to reconstruct the data responsively to the preprocessed data. | 08-29-2013 |
20130254470 | EFFICIENT DATA STORAGE IN MULTI-PLANE MEMORY DEVICES - A method for data storage includes initially storing a sequence of data pages in a memory that includes multiple memory arrays, such that successive data pages in the sequence are stored in alternation in a first number of the memory arrays. The initially-stored data pages are rearranged in the memory so as to store the successive data pages in the sequence in a second number of the memory arrays, which is less than the first number. The rearranged data pages are read from the second number of the memory arrays. | 09-26-2013 |
20130268824 | ADAPTIVE OVER-PROVISIONING IN MEMORY SYSTEMS - A method for data storage includes, in a memory that includes multiple memory blocks, specifying at a first time a first over-provisioning overhead, and storing data in the memory while retaining in the memory blocks memory areas, which do not hold valid data and whose aggregated size is at least commensurate with the specified first over-provisioning overhead. Portions of the data from one or more previously-programmed memory blocks containing one or more of the retained memory areas are compacted. At a second time subsequent to the first time, a second over-provisioning overhead, different from the first over-provisioning overhead, is specified, and data storage and data portion compaction is continued while complying with the second over-provisioning overhead. | 10-10-2013 |
20130283122 | Error Correction Coding Over Multiple Memory Pages - A method for data storage includes encoding each of multiple data items individually using a first Error Correction Code (ECC) to produce respective encoded data items. The encoded data items are stored in a memory. The multiple data items are encoded jointly using a second ECC, so as to produce a code word of the second ECC, and only a part of the code word is stored in the memory. The stored encoded data items are recalled from the memory and the first ECC is decoded in order to reconstruct the data items. Upon a failure to reconstruct a given data item from a respective given encoded data item by decoding the first ECC, the given data item is reconstructed based on the part of the code word of the second ECC and on the encoded data items other than the given encoded data item. | 10-24-2013 |
20130301360 | Data Storage in Analog Memory Cells Using Modified Pass Voltages - A method for data storage includes storing data in a target analog memory cell, which is one of a group of analog memory cells that are connected in series with one another, by writing a storage value into the target memory cell. The storage value written into the target memory cell is verified while biasing the other memory cells in the group with respective first pass voltages. After writing and verifying the storage value, the storage value is read from the target memory cell while biasing the other memory cells in the group with respective second pass voltages, wherein at least one of the second pass voltages applied to one of the other memory cells in the group is lower than a respective first pass voltage applied to the one of the other memory cells. The data is reconstructed responsively to the read storage value. | 11-14-2013 |
20140029338 | STORAGE AT M BITS/CELL DENSITY IN N BITS/CELL ANALOG MEMORY CELL DEVICES, M>N - A method for data storage includes accepting data for storage in a memory that includes multiple analog memory cells and supports a set of built-in programming commands. Each of the programming commands programs a respective page, selected from a group of N pages, in a subset of the memory cells. The subset of the memory cells is programmed to store M pages of the data, M>N, by performing a sequence of the programming commands drawn only from the set. | 01-30-2014 |
20140047291 | AUTOMATIC DEFECT MANAGEMENT IN MEMORY DEVICES - A method for data storage in a memory including multiple memory cells arranged in blocks, includes storing first and second pages in respective first and second groups of the memory cells within a given block of the memory. A pattern of respective positions of one or more defective memory cells is identified in the first group. The second page is recovered by applying the pattern identified in the first group to the second group of the memory cells. | 02-13-2014 |
20140053043 | Interference-Aware Assignment of Programming Levels in Analog Memory Cells - A method for data storage includes accepting data for storage in a memory including multiple analog memory cells. For each memory cell, a respective set of nominal analog values is assigned for representing data values to be stored in the memory cell, by choosing the nominal analog values for a given memory cell in a respective range that depends on interference between the given memory cell and at least one other memory cell in the memory. The data is stored in each memory cell using the respective selected set of the nominal analog values. | 02-20-2014 |
20140122787 | ADAPTIVE OVER-PROVISIONING IN MEMORY SYSTEMS - A method for data storage includes, in a memory that includes multiple memory blocks, specifying at a first time a first over-provisioning overhead, and storing data in the memory while retaining in the memory blocks memory areas, which do not hold valid data and whose aggregated size is at least commensurate with the specified first over-provisioning overhead. Portions of the data from one or more previously-programmed memory blocks containing one or more of the retained memory areas are compacted. At a second time subsequent to the first time, a second over-provisioning overhead, different from the first over-provisioning overhead, is specified, and data storage and data portion compaction is continued while complying with the second over-provisioning overhead. | 05-01-2014 |
20140157083 | REDUNDANT DATA STORAGE SCHEMES FOR MULTI-DIE MEMORY SYSTEMS - A method for data storage includes storing data in a memory that includes one or more memory units, each memory unit including memory blocks. The stored data is compacted by copying at least a portion of the data from a first memory block to a second memory block, and subsequently erasing the first memory block. Upon detecting a failure in the second memory block after copying the portion of the data and before erasure of the first memory block, the portion of the data is recovered by reading the portion from the first memory block. | 06-05-2014 |
20140157084 | DISTORTION ESTIMATION AND CANCELLATION IN MEMORY DEVICES - A method for operating a memory ( | 06-05-2014 |
20140157085 | REDUNDANT DATA STORAGE SCHEMES FOR MULTI-DIE MEMORY SYSTEMS - A method for data storage includes storing data in a memory that includes one or more memory units, each memory unit including memory blocks. The stored data is compacted by copying at least a portion of the data from a first memory block to a second memory block, and subsequently erasing the first memory block. Upon detecting a failure in the second memory block after copying the portion of the data and before erasure of the first memory block, the portion of the data is recovered by reading the portion from the first memory block. | 06-05-2014 |
20140157090 | Programming Schemes for Multi-Level Analog Memory Cells - A method for data storage includes storing first data bits in a set of multi-bit analog memory cells at a first time by programming the memory cells to assume respective first programming levels. Second data bits are stored in the set of memory cells at a second time that is later than the first time by programming the memory cells to assume respective second programming levels that depend on the first programming levels and on the second data bits. A storage strategy is selected responsively to a difference between the first and second times. The storage strategy is applied to at least one group of the data bits, selected from among the first data bits and the second data bits. | 06-05-2014 |
20140189280 | Reuse of Host Hibernation Storage Space By Memory Controller - A method for data storage includes, in a host system that operates alternately in a normal state and a hibernation state, reserving a hibernation storage space in a non-volatile storage device for storage of hibernation-related information in preparation for entering the hibernation state. While the host system is operating in the normal state, a storage task other than storage of the hibernation-related information is performed using at least a portion of the reserved hibernation storage space. | 07-03-2014 |
20140201433 | SELECTIVE ACTIVATION OF PROGRAMMING SCHEMES IN ANALOG MEMORY CELL ARRAYS - A method for data storage includes defining a first programming scheme that programs a group of analog memory cells while reducing interference caused by at least one memory cell that neighbors the group, and a second programming scheme that programs the group of the analog memory cells and does not reduce all of the interference reduced by the first programming scheme. One of the first and second programming schemes is selected based on a criterion defined with respect to the analog memory cells. Data is stored in the group of the analog memory cells using the selected programming scheme. | 07-17-2014 |
20140237322 | STORAGE AT M BITS/CELL DENSITY IN N BITS/CELL ANALOG MEMORY CELL DEVICES, M>N - A method for data storage includes accepting data for storage in a memory that includes multiple analog memory cells and supports a set of built-in programming commands. Each of the programming commands programs a respective page, selected from a group of N pages, in a subset of the memory cells. The subset of the memory cells is programmed to store M pages of the data, M>N, by performing a sequence of the programming commands drawn only from the set. | 08-21-2014 |
20140298139 | MEMORY DEVICE WITH INTERNAL SIGNAL PROCESSING UNIT - A method for operating a memory includes storing data in a plurality of analog memory cells that are fabricated on a first semiconductor die by writing input storage values to a group of the analog memory cells. After storing the data, multiple output storage values are read from each of the analog memory cells in the group using respective, different threshold sets of read thresholds, thus providing multiple output sets of the output storage values corresponding respectively to the threshold sets. The multiple output sets of the output storage values are preprocessed by circuitry that is fabricated on the first semiconductor die, to produce preprocessed data. The preprocessed data is provided to a memory controller, which is fabricated on a second semiconductor die that is different from the first semiconductor die. so as to enable the memory controller to reconstruct the data responsively to the preprocessed data. | 10-02-2014 |
20140325308 | Efficient Re-read Operations in Analog Memory Cell Arrays - A method for data storage includes storing data, which is encoded with an Error Correction Code (ECC), in a group of analog memory cells by writing respective first storage values to the memory cells in the group. After storing the data, respective second storage values are read from the memory cells in the group, and the read second storage values are processed so as to decode the ECC. Responsively to a failure in decoding the ECC, one or more of the second storage values that potentially caused the failure are identified as suspect storage values. Respective third storage values are re-read from a subset of the memory cells that includes the memory cells holding the suspect storage values. The ECC is re-decoded using the third storage values so as to reconstruct the stored data. | 10-30-2014 |
20140344524 | ADAPTIVE OVER-PROVISIONING IN MEMORY SYSTEMS - A method for data storage includes, in a memory that includes multiple memory blocks, specifying at a first time a first over-provisioning overhead, and storing data in the memory while retaining in the memory blocks memory areas, which do not hold valid data and whose aggregated size is at least commensurate with the specified first over-provisioning overhead. Portions of the data from one or more previously-programmed memory blocks containing one or more of the retained memory areas are compacted. At a second time subsequent to the first time, a second over-provisioning overhead, different from the first over-provisioning overhead, is specified, and data storage and data portion compaction is continued while complying with the second over-provisioning overhead. | 11-20-2014 |
20150055388 | SELECTIVE ACTIVATION OF PROGRAMMING SCHEMES IN ANALOG MEMORY CELL ARRAYS - A method for data storage includes defining a first programming scheme that programs a group of analog memory cells while reducing interference caused by at least one memory cell that neighbors the group, and a second programming scheme that programs the group of the analog memory cells and does not reduce all of the interference reduced by the first programming scheme. One of the first and second programming schemes is selected based on a criterion defined with respect to the analog memory cells. Data is stored in the group of the analog memory cells using the selected programming scheme. | 02-26-2015 |