Patent application number | Description | Published |
20110128649 | MAGNETIC RECORDING MEDIUM HAVING NON-MAGNETIC SEPARATING REGIONS AND METHODS OF MANUFACTURING THE SAME - In one embodiment, a magnetic recording medium includes a patterned magnetic recording layer above a substrate, the patterned magnetic recording layer including recording regions and separating regions for separating the recording regions and a non-magnetic alloy layer positioned in the separating regions, wherein the non-magnetic alloy layer includes Ti. In another embodiment, a method for producing a magnetic recording medium includes forming separating regions in a magnetic recording layer by removing portions of the magnetic layer, wherein the separating regions separate recording regions in the magnetic layer, and depositing a non-magnetic alloy layer in the separating regions. Other media and methods are described according to more embodiments. | 06-02-2011 |
20120140357 | MAGNETIC RECORDING MEDIUM HAVING RECORDING REGIONS AND SEPARATING REGIONS AND METHODS OF MANUFACTURING THE SAME - In one embodiment, a method for forming a magnetic recording medium includes forming a protective layer above reading regions of a patterned magnetic recording layer and separating regions between the recording regions, wherein the protective layer forms on sides of the recording regions and partially fills the separating regions, and forming a filler layer on the protective layer, wherein the filler layer completely fills the separating regions, wherein the filler layer has an uneven upper surface. In another embodiment, a medium includes a patterned magnetic recording layer, a protective layer above the patterned magnetic recording layer and on sides of the patterned magnetic recording layer, and a filler layer positioned between the patterned magnetic recording layer in separating regions, wherein DLC of the filler layer is a lower density than DLC of the protective layer. Other systems and methods are described according to more embodiments. | 06-07-2012 |
Patent application number | Description | Published |
20090224342 | MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY - A magnetoresistive effect element includes a reference layer, a recording layer, and a nonmagnetic layer. The reference layer is made of a magnetic material, has an invariable magnetization which is perpendicular to a film surface. The recording layer is made of a magnetic material, has a variable magnetization which is perpendicular to the film surface. The nonmagnetic layer is arranged between the reference layer and the recording layer. A critical diameter which is determined by magnetic anisotropy, saturation magnetization, and switched connection of the recording layer and has a single-domain state as a unique stable state or a critical diameter which has a single-domain state as a unique stable state and is inverted while keeping the single-domain state in an inverting process is larger than an element diameter of the magnetoresistive effect element. | 09-10-2009 |
20120068285 | MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY, AND METHOD OF MANUFACTURING MAGNETORESISTIVE EFFECT ELEMENT - According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including perpendicular anisotropy to a film surface and an invariable magnetization direction, the first magnetic layer having a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element selected from a second group including Co and Fe, a second magnetic layer including perpendicular magnetic anisotropy to the film surface and a variable magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer. The magnetic film includes amorphous phases and crystals whose particle sizes are 0.5 nm or more. | 03-22-2012 |
20120069640 | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - A magnetoresistive element according to an embodiment includes: a first and second magnetic layers having an easy axis of magnetization in a direction perpendicular to a film plane; and a first nonmagnetic layer interposed between the first and second magnetic layers, at least one of the first and second magnetic layers including a structure formed by stacking a first and second magnetic films, the second magnetic film being located closer to the first nonmagnetic layer, the second magnetic film including a structure formed by repeating stacking of a magnetic material layer and a nonmagnetic material layer at least twice, the nonmagnetic material layers of the second magnetic film containing at least one element selected from the group consisting of Ta, W, Hf, Zr, Nb, Mo, Ti, V, and Cr, one of the first and second magnetic layers having a magnetization direction that is changed by applying a current. | 03-22-2012 |
20120241881 | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including Mn | 09-27-2012 |
20130288397 | MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY, AND METHOD OF MANUFACTURING MAGENTORESISTIVE EFFECT ELEMENT - According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including perpendicular anisotropy to a film surface and an invariable magnetization direction, the first magnetic layer having a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element selected from a second group including Co and Fe, a second magnetic layer including perpendicular magnetic anisotropy to the film surface and a variable magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer. The magnetic film includes amorphous phases and crystals whose particle sizes are 0.5 nm or more. | 10-31-2013 |
20140077319 | MAGNETORESISTIVE EFFECT ELEMENT AND MANUFACTURING METHOD THEREOF - According to one embodiment, a magnetoresistive effect element includes a multilayer film including a transition metal nitride film, an antiferromagnetic film, a first ferromagnetic film, a nonmagnetic film, and a perpendicular magnetic anisotropic film stacked in that order. The first ferromagnetic film has a negative perpendicular magnetic anisotropic constant. Magnetization of the first ferromagnetic film is caused to point in a direction perpendicular to the film surface forcibly by an exchange-coupling magnetic field generated by the antiferromagnetic film. | 03-20-2014 |
20140159177 | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including Mn | 06-12-2014 |
20140264673 | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - According to one embodiment, a magnetoresistive element includes a first magnetic layer having a variable magnetization direction; a second magnetic layer having an invariable magnetization direction; and a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer and including an MgFeO film, wherein the MgFeO film contains at least one element selected from a group consisting of Ti, V, Mn, and Cu. | 09-18-2014 |
20140269038 | MAGNETIC MEMORY - A magnetic memory according to an embodiment includes at least one MTJ element, the MTJ element including: a magnetic multilayer structure including a first magnetic layer in which a direction of magnetization is fixed, a second magnetic layer in which a direction of magnetization is changeable, and a tunnel barrier layer located between the first and second magnetic layers; a first electrode provided on a first surface of the magnetic multilayer structure; a second electrode provided on a second surface of the magnetic multilayer structure; an insulating film provided on a side surface of the magnetic multilayer structure; and a control electrode provided on the side surface of the magnetic multilayer structure with the insulating film located therebetween, a voltage being applied to the control electrode in a read operation, which increases an energy barrier for changing the magnetization of the second magnetic layer. | 09-18-2014 |
20150076635 | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including Mn | 03-19-2015 |
20160118098 | MAGNETIC MEMORY - A magnetic memory according to an embodiment includes at least one MTJ element, the MTJ element including: a magnetic multilayer structure including a first magnetic layer in which a direction of magnetization is fixed, a second magnetic layer in which a direction of magnetization is changeable, and a tunnel barrier layer located between the first and second magnetic layers; a first electrode provided on a first surface of the magnetic multilayer structure; a second electrode provided on a second surface of the magnetic multilayer structure; an insulating film provided on a side surface of the magnetic multilayer structure; and a control electrode provided on the side surface of the magnetic multilayer structure with the insulating film located therebetween, a voltage being applied to the control electrode in a read operation, which increases an energy barrier for changing the magnetization of the second magnetic layer. | 04-28-2016 |
Patent application number | Description | Published |
20080236614 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a vacuum chamber, a processing chamber housed in the vacuum chamber, and a sample stage located in the processing chamber, for supporting on its upper surface a disk-like sample to be processed, wherein plural disk-like samples are continuously processed with plasma generated in the processing chamber and wherein during the idling time between the successive processes the temperature of the sample stage is adjusted to a predetermined value higher than the temperature at which the samples are processed. | 10-02-2008 |
20080237184 | METHOD AND APPARATUS FOR PLASMA PROCESSING - A plasma processing apparatus comprising a vacuum vessel; a process chamber housed in the vacuum vessel; and a sample stage located in the process chamber, for supporting on its upper surface a disk-like sample to be processed; wherein plural disk-like samples are continuously processed with plasma generated in the process chamber and wherein during the idling time between the successive processes the temperature of the sample stage is adjusted to a predetermined value higher than the temperature at which the samples are processed. | 10-02-2008 |
20090218316 | MANUFACTURING METHOD IN PLASMA PROCESSING APPARATUS - A manufacturing method includes steps of: placing a film composed of dielectric, on the top surface of a sample stage, forming a film-like heater on the film made of the dielectric, supplying power to the heater to detect a temperature distribution, adjusting a resistance value of the heater on the basis of a result of detection of a temperature distribution so that the temperature distribution has a predetermined value, and then forming the film composed of the dielectric, on the heater. | 09-03-2009 |
20090321017 | Plasma Processing Apparatus and Plasma Processing Method - There is disclosed a plasma processing apparatus wherein a sample placed on the top surface of the sample table located within the processing chamber contained in a vacuum vessel is processed with plasma formed in the processing chamber, comprising a set of ducts cut within the sample table through which cooling medium flows; a film-shaped heater whose heating elements are concentrically embedded in the dielectric film serving as the top surface of the sample table; plural temperature controllers which set up the temperature of the cooling medium flowing through the ducts at different values, respectively; and a control unit which switches over the circulations through the ducts of the cooling medium supplied from the plural temperature controllers. | 12-31-2009 |
20110297082 | PLASMA PROCESSING APPARATUS AND SAMPLE STAGE - A plasma processing apparatus includes a metallic basic material arranged in a sample stage, a dielectric film of dielectric material disposed on an upper surface of the basic material, the dielectric film being formed through a plasma spray process; a film-shaped heater disposed in the dielectric film, the heater being formed through a plasma spray process; an adhesive layer arranged on the dielectric film; a sintered ceramic plate having a thickness ranging from about 0.2 mm to about 0.4 mm, the sintered ceramic plate being adhered onto the dielectric film by the adhesive layer; a sensor disposed in the basic material for sensing a temperature; and a controller for receiving an output from the sensor and adjusting quantity of heat generated by the heater. | 12-08-2011 |
20120000774 | Plasma Processing Apparatus - A plasma processing apparatus includes a processing chamber to be depressurized and exhausted, a sample placement electrode provided in the processing chamber and having a sample placement surface on which a substrate to be processed is placed, an electromagnetic generation device to generate plasma in the processing chamber, a supply system that supplies processing gas to the processing chamber, a vacuum exhaust system that exhausts inside the processing chamber, a heater layer and a base temperature monitor that are disposed on the sample placement electrode, a wafer temperature estimating unit that estimates a wafer temperature from the base temperature monitor and plasma forming power supply, and a controller that regulates the heater corresponding to output from the temperature estimating unit. | 01-05-2012 |
20130001197 | PLASMA PROCESSING METHOD - In a plasma processing method for conducting etching on an object to be processed by generating plasma from depositional gas introduced into a processing chamber and exposing the object to be processed to the plasma in a state in which radio frequency power is applied, the object to be processed is etched under etching conditions that a deposit film on an inner wall of the processing chamber becomes amorphous by repeating a first period during which the object to be processed is exposed to plasma and a second period during which the object to be processed is exposed to plasma and an etching rate is lower as compared with the first period. Consequently, particles due to increase in the number of processed sheets of the object to be processed can be suppressed. | 01-03-2013 |
20130109184 | PLASMA ETCHING METHOD | 05-02-2013 |
20130157470 | PLASMA ETCHING METHOD - A plasma etching method that can improve an etching selection ratio of a film to be etched to a film different from the film to be etched compared with the related art is provided. The present invention provides a plasma etching method for selectively etching a film to be etched against a film different from the film to be etched, in which plasma etching of the film to be etched is performed using a gas that can cause to generate a deposited film containing similar components as components of the different film. | 06-20-2013 |
20140220785 | Plasma Etching Method - A plasma etching method that can improve an etching selection ratio of a film to be etched to a film different from the film to be etched compared with the related art is provided. The present invention provides a plasma etching method for selectively etching a film to be etched against a film different from the film to be etched, in which plasma etching of the film to be etched is performed using a gas that can cause to generate a deposited film containing similar components as components of the different film. | 08-07-2014 |
Patent application number | Description | Published |
20080205107 | Integrated-inverter electric compressor - An object is to provide an integrated-inverter electric compressor that can enhance assembly and vibration resistance of power semiconductor switching devices and control substrates thereof constituting the inverter device. The integrated-inverter electric compressor, in which an inverter device is installed in an inverter container provided on an outer circumference of a housing, includes a plurality of IGBTs constituting the inverter device and a guide member having a plurality of guide holes for passing terminals of the IGBTs provided between the control substrate and the IGBTs. The guide member is provided with at least one first positioning pin, fitted in positioning holes provided in a mounting surface of the IGBT, in one side surface facing the IGBT, and at least one second positioning pin, fitted in positioning holes provided in the control substrate, in another side surface facing the control substrate. | 08-28-2008 |
20090244854 | Integrated-inverter electric compressor and inverter device - The invention provides an integrated-inverter electric compressor and an inverter device thereof which allow handling of the inverter device by neither touching nor holding a CPU substrate. An integrated-inverter electric compressor includes an inverter module integrating a power-related metal substrate on which a power semiconductor switching device is mounted and a resin case integrally insert-molded with a plurality of terminals, and is provided with a CPU substrate on which a control and communication circuit having a device that operates at low-voltage is mounted on the upper surface of the inverter module, wherein the resin case is integrated with a grip which extends in a horizontal direction at an upper edge of a circumference thereof. | 10-01-2009 |
20100232991 | ELECTRIC COMPRESSOR - In an inverter control apparatus in which a control circuit board is fixed by use of pin-like terminals provided in a power board, the breakage of the pin-like terminals is prevented. The power board | 09-16-2010 |