Patent application number | Description | Published |
20090129188 | Devices and methods for a threshold voltage difference compensated sense amplifier - Embodiments are described for a voltage compensated sense amplifier. One such sense amplifier includes a pair of digit line nodes respectively coupled to a pair of transistors. A first pair of switches are adapted to cross-couple the gates of the transistors to the respective digit line node and a second pair of switches are adapted to couple the gates of the transistors to a voltage supply. The first and second pair of switches are coupled to respective gates of the transistors independent of the pair of transistors being respectively coupled to the digit line nodes. | 05-21-2009 |
20090168551 | LOW VOLTAGE SENSE AMPLIFIER AND SENSING METHOD - Systems and methods of sensing a data state coupled to a digit line and for coupling a digit line to a sense amplifier. In sensing the data state coupled to the digit line, the digit line is coupled to a sense node and driving voltages provided to the sense amplifier. The data state is latched in response to the driving voltages. In coupling the digit line to a sense amplifier, the digit line is coupled to the sense amplifier for a first time period and decoupled from the sense amplifier for a second time period. The digit line is coupled to the sense amplifier at a controlled rate following the second time period. | 07-02-2009 |
20100019804 | ARRAY SENSE AMPLIFIERS, MEMORY DEVICES AND SYSTEMS INCLUDING SAME, AND METHODS OF OPERATION - A sense amplifier having an amplifier stage with decreased gain is described. The sense amplifier includes a first input/output (“I/O”) node and a second complementary I/O node. The sense amplifier includes two amplifier stages, each for amplifying a signal on one of the I/O nodes. The first amplifier stage, having a first conductivity-type, amplifies one of the I/O node towards a first voltage. The second amplifier stage, having a second conductivity-type, amplifies the other I/O node towards a second voltage. The sense amplifier also includes a resistance circuit coupled to the second amplifier stage to reduce the gain of the second amplifier stage thereby reducing the rate of amplification of the signal on the corresponding I/O node. | 01-28-2010 |
20100061158 | LOW VOLTAGE SENSE AMPLIFIER AND SENSING METHOD - Systems and methods of sensing a data state coupled to a digit line and for coupling a digit line to a sense amplifier. In sensing the data state coupled to the digit line, the digit line is coupled to a sense node and driving voltages provided to the sense amplifier. The data state is latched in response to the driving voltages. In coupling the digit line to a sense amplifier, the digit line is coupled to the sense amplifier for a first time period and decoupled from the sense amplifier for a second time period. The digit line is coupled to the sense amplifier at a controlled rate following the second time period. | 03-11-2010 |
20110032002 | DEVICES AND METHODS FOR A THRESHOLD VOLTAGE DIFFERENCE COMPENSATED SENSE AMPLIFIER - Embodiments are described for a voltage compensated sense amplifier. One such sense amplifier includes a pair of digit line nodes respectively coupled to a pair of transistors. A first pair of switches are adapted to cross-couple the gates of the transistors to the respective digit line node and a second pair of switches are adapted to couple the gates of the transistors to a voltage supply. The first and second pair of switches are coupled to respective gates of the transistors independent of the pair of transistors being respectively coupled to the digit line nodes. | 02-10-2011 |
20110103158 | LOW VOLTAGE SENSING SCHEME HAVING REDUCED ACTIVE POWER DOWN STANDBY CURRENT - A low voltage sensing scheme reduces active power down standby leakage current in a memory device. A clamping device or diode is used between a Psense amplifier control line (e.g. ACT) and Vcc and/or between an Nsense amplifier control line (e.g. RNL*) and Vss (ground potential). The clamping diode is not enabled during normal memory operations, but is turned on during active power down mode to reduce leakage current through ACT and/or RNL* nodes. The clamping device connected to the ACT node may reduce the voltage on the ACT line during power down mode, whereas the clamping device connected to the RNL* node may increase the voltage on the RNL* line during power down mode to reduce sense amplifier leakage current through these nodes. Because of the rules governing abstracts, this abstract should not be used to construe the claims. | 05-05-2011 |
20110317509 | MEMORY DEVICE WORD LINE DRIVERS AND METHODS - Memory subsystems and methods, such as those involving a memory cell array formed over a semiconductor material of a first type, such as p-type substrate. In at least one such subsystem, all of the transistors used to selectively access cells within the array are transistors of a second type, such as n-type transistors. Local word line drivers are coupled to respective word lines extending through the array. Each local word line drivers includes at least one transistor. However, all of the transistors in the local word line drivers are of the second type. A well of semiconductor material of the second type, is also formed in the material of the first type, and a plurality of global word line drivers are formed using the well. Each global word line driver includes at least one transistor of the first type. Other subsystems and methods are disclosed. | 12-29-2011 |
20120063256 | MEMORY DEVICE WORD LINE DRIVERS AND METHODS - Memory subsystems and methods, such as those involving a memory cell array formed over a semiconductor material of a first type, such as p-type substrate. In at least one such subsystem, all of the transistors used to selectively access cells within the array are transistors of a second type, such as n-type transistors. Local word line drivers are coupled to respective word lines extending through the array. Each local word line drivers includes at least one transistor. However, all of the transistors in the local word line drivers are of the second type. A well of semiconductor material of the second type, is also formed in the material of the first type, and a plurality of global word line drivers are formed using the well. Other subsystems and methods are disclosed. | 03-15-2012 |
20120320687 | LOW VOLTAGE SENSING SCHEME HAVING REDUCED ACTIVE POWER DOWN STANDBY CURRENT - A low voltage sensing scheme reduces active power down standby leakage current in a memory device. A clamping device or diode is used between a Psense amplifier control line (e.g. ACT) and Vcc and/or between an Nsense amplifier control line (e.g. RNL*) and Vss (ground potential). The clamping diode is not enabled during normal memory operations, but is turned on during active power down mode to reduce leakage current through ACT and/or RNL* nodes. The clamping device connected to the ACT node may reduce the voltage on the ACT line during power down mode, whereas the clamping device connected to the RNL* node may increase the voltage on the RNL* line during power down mode to reduce sense amplifier leakage current through these nodes. Because of the rules governing abstracts, this abstract should not be used to construe the claims. | 12-20-2012 |
20140153343 | LOW VOLTAGE SENSING SCHEME HAVING REDUCED ACTIVE POWER DOWN STANDBY CURRENT - A low voltage sensing scheme reduces active power down standby leakage current in a memory device. A clamping device or diode is used between a Psense amplifier control line (e.g. ACT) and Vcc and/or between an Nsense amplifier control line (e.g. RNL*) and Vss (ground potential). The clamping diode is not enabled during normal memory operations, but is turned on during active power down mode to reduce leakage current through ACT and/or RNL* nodes. The clamping device connected to the ACT node may reduce the voltage on the ACT line during power down mode, whereas the clamping device connected to the RNL* node may increase the voltage on the RNL* line during power down mode to reduce sense amplifier leakage current through these nodes. Because of the rules governing abstracts, this abstract should not be used to construe the claims. | 06-05-2014 |
20150036442 | APPARATUSES AND METHODS FOR DRIVING A VOLTAGE OF A WORDLINE OF A MEMORY - Apparatuses, global and local wordline drivers, and methods for driving a wordline voltage in a memory is described. An example apparatus includes a memory array including a plurality of sub-arrays. The plurality of sub arrays are coupled to a wordline. The memory array further including a plurality of local wordline drivers coupled between a global wordline and the wordline. The plurality of local wordline drivers are configured to selectively couple the wordline to the global wordline during a memory access operation. The example apparatus further includes a global wordline driver configured to selectively couple the wordline to the global wordline during the memory access operation. | 02-05-2015 |
Patent application number | Description | Published |
20080203128 | Backpack suspension system with hub - A backpack suspension system is provided that provides a more natural feel as it is able to match a hiker's twisting and bending motions. A backpack suspension system comprises a frame having an upper and a lower portion, and a hub connecting the upper and lower portion. The upper and lower portion comprise a plurality of rods adapted to rotate within the hub. The hub is adapted to pivot about a horizontal axis. In certain embodiments the frame is substantially X shaped and in certain embodiments the hub is substantially X shaped. | 08-28-2008 |
20090212081 | SLOSH CONTROLLED PERSONAL HYDRATION SYSTEM - The present invention relates to a personal hydration system. In one exemplary embodiment, the personal hydration system may comprise a hydration reservoir for containing a supply of hydrating fluid, the hydration reservoir may comprise a plurality of compartments. The hydration reservoir may have a low profile and may comprise at least one baffle. | 08-27-2009 |
20130069328 | ASSEMBLY FOR A MOVABLE FRAME - A caster assembly for a frame is described that permits a frame to be easily moved and placed. The caster assembly, which may lift a leg of the frame, can be placed or removed without picking up the frame. The caster assembly further includes a handle that moves a cam for engaging the caster assembly with the leg. A frame having at least one caster assembly is also described. | 03-21-2013 |
20130206805 | VARIABLE SUSPENSION SYSTEM FOR BACKPACKS - An adjustable suspension system for a backpack includes a flexible frame, a trampoline and a tension adjustment mechanism. The suspension system can allow the user to control the position of the frame anywhere between a flat position directly adjacent to the user's back and a fully bowed position that arches away from the user's back. | 08-15-2013 |