Patent application number | Description | Published |
20090039410 | Split Gate Non-Volatile Flash Memory Cell Having A Floating Gate, Control Gate, Select Gate And An Erase Gate With An Overhang Over The Floating Gate, Array And Method Of Manufacturing - An improved split gate non-volatile memory cell is made in a substantially single crystalline substrate of a first conductivity type, having a first region of a second conductivity type, a second region of the second conductivity type, with a channel region between the first region and the second region in the substrate. The cell has a select gate above a portion of the channel region, a floating gate over another portion of the channel region, a control gate above the floating gate and an erase gate adjacent to the floating gate. The erase gate has an overhang extending over the floating gate. The ratio of the dimension of the overhang to the dimension of the vertical separation between the floating gate and the erase gate is between approximately 1.0 and 2.5, which improves erase efficiency. | 02-12-2009 |
20090219776 | NON-VOLATILE MEMORY DEVICE WITH PLURAL REFERENCE CELLS, AND METHOD OF SETTING THE REFERENCE CELLS - A non-volatile memory device has an array of non-volatile memory cells, a first plurality of non-volatile memory reference cells, with each reference cell capable of being programmed to a reference level different from the other reference cells; and a second plurality of comparators. Each of the comparators is connectable to one of the first plurality of non-volatile memory reference cells and to one of a third plurality of memory cells from among the array of non-volatile memory cells. | 09-03-2009 |
20100054043 | Split Gate Non-Volatile Flash Memory Cell Having a Floating Gate, Control Gate, Select Gate and an Erase Gate with an Overhang Over the Floating Gate, Array and Method of Manufacturing - An improved split gate non-volatile memory cell is made in a substantially single crystalline substrate of a first conductivity type, having a first region of a second conductivity type, a second region of the second conductivity type, with a channel region between the first region and the second region in the substrate. The cell has a select gate above a portion of the channel region, a floating gate over another portion of the channel region, a control gate above the floating gate and an erase gate adjacent to the floating gate. The erase gate has an overhang extending over the floating gate. The ratio of the dimension of the overhang to the dimension of the vertical separation between the floating gate and the erase gate is between approximately 1.0 and 2.5, which improves erase efficiency. | 03-04-2010 |
20100254207 | Non-Volatile Memory Device with Plural Reference Cells, and Method of Setting the Reference Cells - A non-volatile memory device has an array of non-volatile memory cells, a first plurality of non-volatile memory reference cells, with each reference cell capable of being programmed to a reference level different from the other reference cells; and a second plurality of comparators. Each of the comparators is connectable to one of the first plurality of non-volatile memory reference cells and to one of a third plurality of memory cells from among the array of non-volatile memory cells. | 10-07-2010 |
20110076816 | SPLIT GATE NON-VOLATILE FLASH MEMORY CELL HAVING A FLOATING GATE, CONTROL GATE, SELECT GATE AND AN ERASE GATE WITH AN OVERHANG OVER THE FLOATING GATE, ARRAY AND METHOD OF MANUFACTURING - An improved split gate non-volatile memory cell is made in a substantially single crystalline substrate of a first conductivity type, having a first region of a second conductivity type, a second region of the second conductivity type, with a channel region between the first region and the second region in the substrate. The cell has a select gate above a portion of the channel region, a floating gate over another portion of the channel region, a control gate above the floating gate and an erase gate adjacent to the floating gate. The erase gate has an overhang extending over the floating gate. The ratio of the dimension of the overhang to the dimension of the vertical separation between the floating gate and the erase gate is between approximately 1.0 and 2.5, which improves erase efficiency. | 03-31-2011 |
20110127599 | Split Gate Non-volatile Flash Memory Cell Having A Floating Gate, Control Gate, Select Gate And An Erase Gate With An Overhang Over The Floating Gate, Array And Method Of Manufacturing - An improved split gate non-volatile memory cell is made in a substantially single crystalline substrate of a first conductivity type, having a first region of a second conductivity type, a second region of the second conductivity type, with a channel region between the first region and the second region in the substrate. The cell has a select gate above a portion of the channel region, a floating gate over another portion of the channel region, a control gate above the floating gate and an erase gate adjacent to the floating gate. The erase gate has an overhang extending over the floating gate. The ratio of the dimension of the overhang to the dimension of the vertical separation between the floating gate and the erase gate is between approximately 1.0 and 2.5, which improves erase efficiency. | 06-02-2011 |
20120257465 | Non-volatile Memory Device With Plural Reference Cells, And Method Of Setting The Reference Cells - A non-volatile memory device has an array of non-volatile memory cells, a first plurality of non-volatile memory reference cells, with each reference cell capable of being programmed to a reference level different from the other reference cells; and a second plurality of comparators. Each of the comparators is connectable to one of the first plurality of non-volatile memory reference cells and to one of a third plurality of memory cells from among the array of non-volatile memory cells. | 10-11-2012 |
20130107631 | Method Of Programming A Split Gate Non-volatile Floating Gate Memory Cell Having A Separate Erase Gate | 05-02-2013 |
20130114337 | Method Of Testing Data Retention Of A Non-volatile Memory Cell Having A Floating Gate - A method of decreasing the test time to determine data retention (e.g. leakage current) of a memory cell having a floating gate for the storage of charges thereon. The memory cell is characterized by the leakage current having a rate of leakage which is dependent upon the absolute value of the voltage of the floating gate. The memory cell is further characterized by a first erase voltage and a first programming voltage, applied during normal operation, and a first read current detected during normal operation. The method applies a voltage greater than the first erase voltage or greater than the first programming voltage, to over erase the floating gate. The memory cell including the floating gate is subject to a single high temperature bake. The memory cell is then tested for data retention of the floating gate based on the single high temperature bake. | 05-09-2013 |
20140104961 | Non-volatile Memory Device With Plural Reference Cells, And Method Of Setting The Reference Cells - A non-volatile memory device has an array of non-volatile memory cells, a first plurality of non-volatile memory reference cells, with each reference cell capable of being programmed to a reference level different from the other reference cells; and a second plurality of comparators. Each of the comparators is connectable to one of the first plurality of non-volatile memory reference cells and to one of a third plurality of memory cells from among the array of non-volatile memory cells. | 04-17-2014 |
Patent application number | Description | Published |
20130032872 | Non-volatile Memory Cell Having A High K Dielectric And Metal Gate - A non-volatile memory including a substrate of a first conductivity type with first and second spaced apart regions formed therein of a second conductivity type with a channel region therebetween. A polysilicon metal gate word line is positioned over a first portion of the channel region and spaced apart therefrom by a high K dielectric layer. The metal portion of the word line is immediately adjacent to the high K dielectric layer. A polysilicon floating gate is immediately adjacent to and spaced apart from the word line, and positioned over and insulated from another portion of the channel region. A polysilicon coupling gate is positioned over and insulated from the floating gate. A polysilicon erase gate is positioned on another side of and insulated from the floating gate, positioned over and insulated from the second region, and immediately adjacent to but spaced apart from another side of the coupling gate. | 02-07-2013 |
20140269058 | Non-volatile Memory Program Algorithm Device And Method - A non-volatile memory device and method for programming cells using repeated pulses of program voltages, with interleaved read operations to determine the level of read current, until the desired programming state is achieved. Each successive program pulse has one or more program voltages increased by a step value relative to the previous pulse. For a single level cell type, each cell is individually removed from the programming pulses after reaching a first read current threshold, and the step value is increased for one or more kicker pulses thereafter. For a multi-level cell type, the step value drops after one of the cells reaches a first read current threshold, some cells are individually removed from the programming pulses after reaching a second read current threshold while others are individually removed from the programming pulses after reaching a third read current threshold. | 09-18-2014 |
20140269062 | Low Leakage, Low Threshold Voltage, Split-Gate Flash Cell Operation - A method of reading a memory device having rows and columns of memory cells formed on a substrate, where each memory cell includes spaced apart first and second regions with a channel region therebetween, a floating gate disposed over a first portion of the channel region, a select gate disposed over a second portion of the channel region, a control gate disposed over the floating gate, and an erase gate disposed over the first region. The method includes placing a small positive voltage on the unselected source lines, and/or a small negative voltage on the unselected word lines, during the read operation to suppress sub-threshold leakage and thereby improve read performance. | 09-18-2014 |
20150035040 | Split Gate Non-volatile Flash Memory Cell Having A Silicon-Metal Floating Gate And Method Of Making Same - A non-volatile memory cell includes a substrate of a first conductivity type with first and second spaced apart regions of a second conductivity type, forming a channel region therebetween. A select gate is insulated from and disposed over a first portion of the channel region which is adjacent to the first region. A floating gate is insulated from and disposed over a second portion of the channel region which is adjacent the second region. Metal material is formed in contact with the floating gate. A control gate is insulated from and disposed over the floating gate. An erase gate includes a first portion insulated from and disposed over the second region and is insulated from and disposed laterally adjacent to the floating gate, and a second portion insulated from and laterally adjacent to the control gate and partially extends over and vertically overlaps the floating gate. | 02-05-2015 |
Patent application number | Description | Published |
20140304512 | METHOD AND SYSTEM FOR AUTHENTICATING AND PRESERVING DATA WITHIN A SECURE DATA REPOSITORY - A computer implemented method for identifying and linking a data originator and a data file or data batch from the originator through one or more data source systems. The system stores the data files and batches on a permanent basis for subsequent verification purposes, verifying the identity of the data file originator through originator-specific information from the data source system; and generating unique data entries associated with the originator identity, the file identity and/or a file verification cryptographic digest, and a unique originator signature. The data entries and signature are stored in encrypted form in a Relay Access Table (RAT), as are the public and private keys associated with both the data file and the originator. A certificate for verification of the data file is generated, that contains a digital signature, as well as a file cryptographic digest and metadata associated with filing conditions. | 10-09-2014 |
20150142496 | HYDROCARBON MATRIX SYSTEM AND METHOD OF USING SAME - A matrix system for performing hydrocarbon operations involving exploration, production, transportation, and delivery of hydrocarbons. The matrix system includes a matrix unit, a user terminal, a tag, and a gatekeeper. The matrix unit includes a multi-dimensional matrix including bins to receive hydrocarbon materials, with fields including rows, columns, levels, and themes. Each bin corresponds to one of the rows, columns, levels, and themes. The user terminal includes a user input to upload the hydrocarbon materials to the matrix unit and a user output to receive the hydrocarbon materials from the matrix. The tag is operatively connectable to the hydrocarbon materials. The gatekeeper includes reviewers to review the hydrocarbon materials and to define access criteria and the plurality of fields for each of the tags, and a system custodian to selectively apply the tag to the hydrocarbon materials based on the review whereby the hydrocarbon materials are selectively accessible by users. | 05-21-2015 |