Patent application number | Description | Published |
20080258303 | Novel structure for reducing low-k dielectric damage and improving copper EM performance - A semiconductor structure and methods for forming the same are provided. The semiconductor structure includes a dielectric layer; a chemical mechanical polish (CMP) stop layer on the dielectric layer; a conductive wiring in the dielectric layer; and a metal cap over the conductive wiring. | 10-23-2008 |
20080295412 | APPARATUS FOR STORING SUBSTRATES - An apparatus includes an enclosure and a door configured to seal the enclosure. The door includes a plate. A rotational apparatus is disposed over the plate. At least one first member with a first arm extends from a first rib of the first member. At least one second member with a second arm extends from a second rib of the second member. The first and second arms are connected to the rotational apparatus. At least one corner member has a first edge. The first edge has a shape corresponding to a shape of a corner of the frame. The corner member is connected to a first end of the third arm. A second end of the third arm is connected to the rotational apparatus. A sealing material is disposed along a first longitudinal side of the first rib and a second longitudinal side of the second rib. | 12-04-2008 |
20090218693 | LOW RESISTANCE HIGH RELIABILITY CONTACT VIA AND METAL LINE STRUCTURE FOR SEMICONDUCTOR DEVICE - A semiconductor contact structure includes a copper plug formed within a dual damascene, single damascene or other opening formed in a dielectric material and includes a composite barrier layer between the copper plug and the sidewalls and bottom of the opening. The composite barrier layer preferably includes an ALD TaN layer disposed on the bottom and along the sides of the opening although other suitable ALD layers may be used. A barrier material is disposed between the copper plug and the ALD layer. The barrier layer may be a Mn-based barrier layer, a Cr-based barrier layer, a V-based barrier layer, a Nb-based barrier layer, a Ti-based barrier layer, or other suitable barrier layers. | 09-03-2009 |
20120190191 | Process for Improving Copper Line Cap Formation - An integrated circuit includes a semiconductor substrate, a low-k dielectric layer over the semiconductor substrate, a first opening in the low-k dielectric layer, and a first diffusion barrier layer in the first opening covering the low-k dielectric layer in the first opening, wherein the first diffusion barrier layer has a bottom portion connected to sidewall portions, and wherein the sidewall portions have top surfaces close to a top surface of the low-k dielectric layer. The integrated circuit further includes a conductive line filling the first opening wherein the conductive line has a top surface lower than the top surfaces of the sidewall portions of the diffusion barrier layer, and a metal cap on the conductive line and only within a region directly over the conductive line. | 07-26-2012 |
20130069234 | STRUCTURE AND METHOD FOR TUNABLE INTERCONNECT SCHEME - The present disclosure provides one embodiment of a method to form an interconnect structure. The method includes forming a first dielectric material layer on a substrate; patterning the first dielectric material layer to form a plurality of vias therein; forming a metal layer on the first dielectric layer and the substrate, wherein the metal layer fills in the plurality of vias; and etching the metal layer such that portions of the metal layer above the first dielectric material layer are patterned to form a plurality of metal lines, aligned with plurality of vias, respectively. | 03-21-2013 |