Patent application number | Description | Published |
20110104438 | AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE CRYSTAL, AND OPTICAL COMPONENT - A method of producing an Al | 05-05-2011 |
20110109973 | AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE CRYSTAL, AND OPTICAL LENS - A method of producing an Al | 05-12-2011 |
20110110840 | METHOD FOR PRODUCING GROUP III-NITRIDE CRYSTAL AND GROUP III-NITRIDE CRYSTAL - A method for producing a group III-nitride crystal having a large thickness and high quality and a group III-nitride crystal are provided. A method for producing a group III-nitride crystal | 05-12-2011 |
20110156213 | METHOD OF MANUFACTURING NITRIDE SUBSTRATE, AND NITRIDE SUBSTRATE - A method of manufacturing a nitride substrate includes the following steps. Firstly, a nitride crystal is grown. Then, the nitride substrate including a front surface is cut from the nitride crystal. In the step of cutting, the nitride substrate is cut such that an off angle formed between an axis orthogonal to the front surface and an m-axis or an a-axis is greater than zero. When the nitride crystal is grown in a c-axis direction, in the step of cutting, the nitride substrate is cut from the nitride crystal along a flat plane which passes through a front surface and a rear surface of the nitride crystal and does not pass through a line segment connecting a center of a radius of curvature of the front surface with a center of a radius of curvature of the rear surface of the nitride crystal. | 06-30-2011 |
Patent application number | Description | Published |
20090127662 | GROUP III NITRIDE SEMICONDUCTOR CRYSTAL SUBSTRATE AND SEMICONDUCTOR DEVICE - A group III nitride semiconductor crystal substrate has a diameter of at least 25 mm and not more than 160 mm. The resistivity of the group III nitride semiconductor crystal substrate is at least 1×10 | 05-21-2009 |
20090127663 | GROUP III NITRIDE SEMICONDUCTOR CRYSTAL GROWING METHOD, GROUP III NITRIDE SEMICONDUCTOR CRYSTAL SUBSTRATE FABRICATION METHOD, AND GROUP III NITRIDE SEMICONDUCTOR CRYSTAL SUBSTRATE - A growing method of a group III nitride semiconductor crystal includes the steps of preparing an underlying substrate, and growing a group III nitride semiconductor crystal doped with silicon by using silicon tetrafluoride gas as doping gas, on the underlying substrate by vapor phase growth. | 05-21-2009 |
20090127664 | GROUP III NITRIDE SEMICONDUCTOR CRYSTAL GROWING METHOD, GROUP III NITRIDE SEMICONDUCTOR CRYSTAL SUBSTRATE FABRICATION METHOD, AND GROUP III NITRIDE SEMICONDUCTOR CRYSTAL SUBSTRATE - A growing method of a group III nitride semiconductor crystal includes the steps of preparing an underlying substrate, and growing a first group III nitride semiconductor crystal doped with silicon by using silicon tetrachloride (SiCl | 05-21-2009 |
20100120231 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device according to the present invention includes the following step: a step (S | 05-13-2010 |
20100164070 | Group III Nitride Semiconductor Crystal Substrate and Semiconductor Device - A group III nitride semiconductor crystal substrate has a diameter of at least 25 mm and not more than 160 mm. The resistivity of the group III nitride semiconductor crystal substrate is at least 1×10 | 07-01-2010 |
20100216268 | MANUFACTURING METHOD OF A SEMICONDUCTOR ELEMENT - A method of manufacturing a semiconductor element of good characteristics at a reduced manufacturing cost is provided. The manufacturing method of the semiconductor element includes a GaN-containing semiconductor layer forming step, an electrode layer forming step, a step of forming an Al film on the GaN-containing semiconductor layer, a step of forming a mask layer made of a material of which etching rate is smaller than that of a material of the Al film, a step of forming a ridge portion using the mask layer as a mask, a step of retreating a position of a side wall of the Al film with respect to a position of a side wall of the mask layer, a step of forming, on the side surface of the ridge portion and the top surface of the mask layer, a protective film made of a material of which etching rate is smaller than that of the material forming the Al film, and a step of removing the Al film and thereby removing the mask layer and a portion of the protective film formed on the top surface of the mask layer. | 08-26-2010 |
20110076453 | AlxGa1-xN Single Crystal and Electromagnetic Wave Transmission Body - Affords an Al | 03-31-2011 |
20110129997 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device according to the present invention includes the following step: a step (S | 06-02-2011 |
20140357067 | METHOD OF MANUFACTURING NITRIDE SUBSTRATE, AND NITRIDE SUBSTRATE - A method of manufacturing a nitride substrate includes the following steps. Firstly, a nitride crystal is grown. Then, the nitride substrate including a front surface is cut from the nitride crystal. In the step of cutting, the nitride substrate is cut such that an off angle formed between an axis orthogonal to the front surface and an m-axis or an a-axis is greater than zero. When the nitride crystal is grown in a c-axis direction, in the step of cutting, the nitride substrate is cut from the nitride crystal along a flat plane which passes through a front surface and a rear surface of the nitride crystal and does not pass through a line segment connecting a center of a radius of curvature of the front surface with a center of a radius of curvature of the rear surface of the nitride crystal. | 12-04-2014 |
Patent application number | Description | Published |
20090279072 | OIL TYPE DISCRIMINATION METHOD AND OIL TYPE DISCRIMINATOR - To provide an oil type discrimination method and an oil type discriminator capable of accurately discriminating a type of oil even when light-shielding components exist in the oil and of preventing in advance erroneous discrimination of a mixture of oil. | 11-12-2009 |
20100106873 | DATA OPERATION APPARATUS AND DATA OPERATION SYSTEM AND COMPUTER PROGRAM AND DATA OPERATION METHOD - The identification acquirement instructing unit | 04-29-2010 |
20110206082 | SEMICONDUCTOR LASER AND SEMICONDUCTOR LASER MODULE - A semiconductor laser outputs a laser light from an output facet of a waveguide having an index waveguide structure, via a lens system. The waveguide includes, in order from a rear facet opposite to the output facet, a first narrow portion, a wide portion that is wider than the first narrow portion, a second narrow portion narrower than the wide portion, a first tapered portion formed between the first narrow portion and the wide portion, which expands toward the wide portion, and a second tapered portion formed between the wide portion and the second narrow portion, which narrows toward the second narrow portion. Each of the first narrow portion, the wide portion, and the second narrow potion has a uniform width. | 08-25-2011 |
20140314113 | SEMICONDUCTOR LASER WITH VARIED-WIDTH WAVEGUIDE AND SEMICONDUCTOR LASER MODULE INCLUDING THE SAME - A semiconductor laser outputs a laser light from an output facet of a waveguide having an index waveguide structure, via a lens system. The waveguide includes, in order from a rear facet opposite to the output facet, a first narrow portion, a wide portion that is wider than the first narrow portion, a second narrow portion narrower than the wide portion, a first tapered portion formed between the first narrow portion and the wide portion, which expands toward the wide portion, and a second tapered portion formed between the wide portion and the second narrow portion, which narrows toward the second narrow portion. Each of the first narrow portion, the wide portion, and the second narrow portion has a uniform width. | 10-23-2014 |
20150146757 | SEMICONDUCTOR LASER MODULE - A semiconductor laser module includes: a semiconductor laser outputting a laser light from an output-facet side of a waveguide which has a first narrow portion identical in width, a wide portion wider than the first narrow portion, a second narrow portion narrower than the wide portion, a first tapered portion between the first narrow portion and the wide portion and increasing in width toward the wide portion, and a second tapered portion between the wide portion and the second narrow portion and decreasing in width toward the second narrow portion; and an optical fiber to which the laser light is input has an optical-feedback unit reflecting a predetermined wavelength of light. The semiconductor laser is enclosed in a package with one end of the optical fiber. The optical-feedback unit has a first optical-feedback unit set at a predetermined reflection center wavelength determining an oscillation wavelength and a second optical-feedback unit. | 05-28-2015 |
20150180598 | COMMUNICATION DEVICE, COMMUNICATION SYSTEM, AND SYNCHRONOUS CONTROL METHOD - A communication device includes a transmission port and a reception port communicating with other network units, a system bus I/F unit communicating with a synchronous target, n (n is an integer of 2 or more) delay counters counting a predetermined period of time, a delay-counter control unit that, upon receiving a synchronous packet input with a predetermined cycle from the reception port, causes the delay counters to count a cycle that is n times as long as the predetermined cycle and controls the delay counters such that counts of the delay counters are cleared at different timings, and a synchronous-pulse output unit outputting a synchronous pulse to the synchronous target through the system bus I/F unit when there is the counter whose count value after being cleared becomes equal to a synchronous-pulse output value. | 06-25-2015 |