Patent application number | Description | Published |
20080219048 | Multibit electro-mechanical memory device and method of manufacturing the same - A multibit electro-mechanical memory device capable of increasing an integrated level of memory devices, and a method of manufacturing the same, are provided. The memory device includes a substrate, a bit line on the substrate; a lower word line and a trap site isolated from the bit line, a pad electrode isolated from a sidewall of the trap site and the lower word line and connected to the bit line, a cantilever electrode suspended over a lower void in an upper part of the trap site, and connected to the pad electrode and curved in a third direction vertical to the first and second direction by an electrical field induced by a charge applied to the lower word line, a contact part for concentrating a charge induced from the cantilever electrode thereon in response to the charge applied from the lower word line and the trap site, the contact part protruding from an end part of the cantilever electrode, and an upper word line formed with an upper void on the cantilever electrode. | 09-11-2008 |
20080232120 | BACKLIGHT ASSEMBLY, DISPLAY MODULE HAVING THE BACKLIGHT ASSEMBLY AND METHOD OF MANUFACTURING THE BACKLIGHT ASSEMBLY - A backlight assembly includes a light source providing light, a mold frame receiving the light source unit and a bottom chassis. The bottom chassis includes a bottom plate, sidewalls extending from the bottom plate and an extension part bent from at least one of the sidewalls and overlapping an adjacent sidewall. The mold frame and the bottom chassis are integrally formed. The extension part overlaps the adjacent sidewall at a corner of the bottom chassis. Thus, the torsional strength of the bottom chassis and a backlight assembly having the bottom chassis is improved. The torsional strength is maintained when a backlight assembly is manufactured. | 09-25-2008 |
20090072296 | Multibit electro-mechanical device and method of manufacturing the same - A multibit electro-mechanical memory device capable of increasing an integrated level of memory devices, and a method of manufacturing the same, are provided. The memory device includes a substrate, a bit line in a first direction on the substrate, a lower word line insulated from the bit line and in a second direction intersecting the first direction, a pad electrode isolated from a sidewall of the lower word line and connected to the bit line, a cantilever electrode expending in the first direction over the lower word line with a lower void therebetween, and connected to the pad electrode and curved in a third direction vertical to the first and second direction by an electrical field induced by a charge applied to the lower word line, a trap site expending in the second direction over the cantilever electrode with an upper void therebetween, and an upper word line to which a charge to curve the cantilever electrode in a direction of the trap site is applied, the upper word line on the trap site. | 03-19-2009 |
20090072297 | Multibit electro-mechanical memory device and method of manufacturing the same - A memory device comprises a cantilever electrode comprising a first portion that is supported by a pad electrode, and that extends from the pad electrode, and further comprising a second portion that arches over an upper part of the lower word line, wherein a lower void is between the second portion of the cantilever electrode and the lower word line, and wherein the second portion of the cantilever electrode, in a first position, is curved, wherein a trap site extends above the cantilever electrode, the trap site separated from the cantilever electrode by an upper void, and wherein an upper word line on the trap site receives a charge that enables the second portion of the cantilever electrode, in a second position, to be curved toward the trap site. | 03-19-2009 |
20090097315 | Multibit electro-mechanical memory device and method of manufacturing the same - A multibit electro-mechanical memory device comprises a substrate, a bit line on the substrate, a first interlayer insulating film on the bit line, first and second lower word lines on the first interlayer insulating film, the first and second lower word lines separated horizontally from each other by a trench, a spacer abutting a sidewall of each of the first and second lower word lines, a pad electrode inside a contact hole, first and second cantilever electrodes suspended over first and second lower voids that correspond to upper parts of the first and second lower word lines provided in both sides on the pad electrode, the first and second cantilever electrodes being separated from each other by the trench, and being curved in a third direction that is perpendicular to the first and second direction; a second interlayer insulating film on the pad electrode, first and second trap sites supported by the second interlayer insulating film to have first and second upper voids on the first and second cantilever electrodes, and first and second upper word lines on the first and second trap sites. | 04-16-2009 |
20090103326 | DISPLAY DEVICE HAVING LIGHT GUIDE UNIT - A light guide unit for a point light source includes a light incident portion, a first reflecting portion and a second reflecting portion. The light emitted from the point light source enters to the light incident portion. The light incident portion includes an optical pattern diffusing an incident light corresponding to the point light source. The first reflecting portion reflects a first light of the incident light. The second reflecting portion roundly connects the first reflecting portion to the light incident portion and reflects a second light of the incident light. | 04-23-2009 |
20100155827 | Semiconductor device having a multi-channel type MOS transistor - In a method of manufacturing a semiconductor device, an active channel pattern is formed on a substrate. The active channel pattern includes preliminary gate patterns and single crystalline silicon patterns that are alternately stacked with each other. A source/drain layer is formed on a sidewall of the active channel pattern. Mask pattern structures including a gate trench are formed on the active channel pattern and the source/drain layer. The patterns are selectively etched to form tunnels. The gate trench is then filled with a gate electrode. The gate electrode surrounds the active channel pattern. The gate electrode is protruded from the active channel pattern. The mask pattern structures are then removed. Impurities are implanted into the source/drain regions to form source/drain regions. A silicidation process is carried out on the source/drain regions to form a metal silicide layer, thereby completing a semiconductor device having a MOS transistor. | 06-24-2010 |
20100172155 | LIGHT GUIDE UNIT FOR POINT LIGHT SOURCE, BACKLIGHT ASSEMBLY HAVING THE LIGHT GUIDE UNIT AND DISPLAY DEVICE HAVING THE SAME - A light guide unit for a point light source includes a light incident portion, a first reflecting portion and a second reflecting portion. The light emitted from the point light source enters to the light incident portion. The light incident portion includes an optical pattern diffusing an incident light corresponding to the point light source. The first reflecting portion reflects a first light of the incident light. The second reflecting portion roundly connects the first reflecting portion to the light incident portion and reflects a second light of the incident light. | 07-08-2010 |
20110230001 | MULTIBIT ELECTRO-MECHANICAL MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A multibit electro-mechanical memory device comprises a substrate, a bit line on the substrate, a first interlayer insulating film on the bit line, first and second lower word lines on the first interlayer insulating film, the first and second lower word lines separated horizontally from each other by a trench, a spacer abutting a sidewall of each of the first and second lower word lines, a pad electrode inside a contact hole, first and second cantilever electrodes suspended over first and second lower voids that correspond to upper parts of the first and second lower word lines provided in both sides on the pad electrode, the first and second cantilever electrodes being separated from each other by the trench, and being curved in a third direction that is perpendicular to the first and second direction; a second interlayer insulating film on the pad electrode, first and second trap sites supported by the second interlayer insulating film to have first and second upper voids on the first and second cantilever electrodes, and first and second upper word lines on the first and second trap sites. | 09-22-2011 |
20140351446 | ELECTRONIC DEVICE USING LOGICAL CHANNELS FOR COMMUNICATION - An apparatus and method for providing one or more protocols for one or more electronic devices are provided. The method includes establishing, by an electronic device configured to provide a framework interface by executing instructions stored in a memory, one or more physical channels with an external electronic device, using one or more communication modules, executing, by the electronic device, two or more application programs to interface with the framework interface, and communicating, via the framework interface, data from the two or more application programs through the one or more physical channels to the external electronic device, using at least one logical channel or session for a respective one of the two or more application programs. | 11-27-2014 |
20140351832 | ELECTRONIC DEVICE USING FRAMEWORK INTERFACE FOR COMMUNICATION - An apparatus and method for providing one or more protocols for one or more electronic devices are provided. The method includes establishing, by an electronic device configured to provide a framework interface by executing instructions stored in a memory, one or more physical channels with an external electronic device, using one or more communication modules, executing, by the electronic device, two or more application programs to interface with the framework interface, and communicating, via the framework interface, data from the two or more application programs through the one or more physical channels to the external electronic device, using at least one logical channel or session for a respective one of the two or more application programs. | 11-27-2014 |