Patent application number | Description | Published |
20090125869 | CALCULATION SYSTEM FOR INVERSE MASKS - A system for calculating mask data to create a desired layout pattern on a wafer reads all or a portion of a desired layout pattern. Mask data having pixels with transmission values is defined along with corresponding optimal mask data pixel transmission values. An objective function is defined that compares image intensities as would be generated on a wafer with an optimal image intensity at a point corresponding to a pixel. The objective function is minimized to determine the transmission values of the mask pixels that will reproduce the desired layout pattern on a wafer. | 05-14-2009 |
20100199107 | SECURE EXCHANGE OF INFORMATION IN ELECTRONIC DESIGN AUTOMATION - Described herein are methods and systems for secure exchange of information related to electronic design automation. Information deemed sensitive and otherwise worthy of protection may be secured by methods such as encryption, obfuscation and other security measures. The secured information may be provided to an electronic design automation tool for processing without revealing at least some of the secured information. For instance, rule files related to integrated circuit manufacturability may be selectively annotated to indicate portions thereof deserving of protection. An encryption tool may be used to secure the information so indicated and generate a file comprising secured information related to electronic design automation. An electronic design automation tool may then unlock and use the secured information without revealing the same. For instance, the tool may be a physical verification tool capable of verifying whether any of the one or more integrated circuit layouts may violate one or more of the secured rules. An error report may be generated without revealing the secured rules. | 08-05-2010 |
20100216061 | Inverse Lithography For High Transmission Attenuated Phase Shift Mask Design And Creation - Various implementations of the invention provide for generation of a high transmission phase shift mask layout through inverse lithography techniques. In various implementations of the present invention, a set of mask data having a plurality of pixels is generated. The transmission value associated with each pixel may then be determined through an inverse lithography technique. With various implementations of the invention, the inverse lithography technique identifies an objective function, minimizes the objective function in relation to a simulation of the optical lithographic process, such that the transmission value, which is greater than 6%, may be determined. | 08-26-2010 |
20110004856 | Inverse Mask Design and Correction for Electronic Design - Various implementations of the invention provide for the generation of “smooth” mask contours by inverse mask transmission derivation and by subsequently “smoothing” the derived mask contours by proximity correction. | 01-06-2011 |
20120042291 | Inverse Mask Design and Correction for Electronic Design - Various implementations of the invention provide for the generation of “smooth” mask contours by inverse mask transmission derivation and by subsequently “smoothing” the derived mask contours by proximity correction. | 02-16-2012 |
20130191792 | Sub-Resolution Assist Feature Repair - After layout design data has been modified using a resolution enhancement process, a repair flow is initiated. This repair flow includes checking a layout design altered by a resolution enhancement process for errors. A repair process is performed to correct detected sub-resolution assist feature errors. The repair process may employ a rule-based sub-resolution assist feature technique, a model-based sub-resolution assist feature technique, an inverse lithography-based sub-resolution assist feature technique, or any combination thereof. | 07-25-2013 |
20130198700 | Layout Design Defect Repair Based On Inverse Lithography And Traditional Optical Proximity Correction - Aspects of the invention relate to techniques for repairing layout design defects after layout data have been processed by resolution enhancement techniques. The repair process first determines a re-correction region that includes three portions: core, context and visible portions. An inverse lithography process is then performed on the core portion of the re-correction region while taking into account effects from the context portion of the re-correction region to generate a first modified re-correction region. A traditional OPC process is then performed on the core and context portions of the first modified re-correction region while taking into account effects from the visible portion of the first modified re-correction region to generate a second modified re-correction region. | 08-01-2013 |
20130227500 | Calculation System For Inverse Masks - A system for calculating mask data to create a desired layout pattern on a wafer reads all or a portion of a desired layout pattern. Mask data having pixels with transmission values is defined along with corresponding optimal mask data pixel transmission values. An objective function is defined that compares image intensities as would be generated on a wafer with an optimal image intensity at a point corresponding to a pixel. The objective function is minimized to determine the transmission values of the mask pixels that will reproduce the desired layout pattern on a wafer. | 08-29-2013 |
20150143323 | Generating Guiding Patterns For Directed Self-Assembly - Aspects of the invention relate to techniques of generating guiding patterns for via-type feature groups. A guiding pattern may be constructed for a via-type feature group that comprises two or more via-type features in a layout design. A backbone structure may then be determined for the guiding pattern. Based on the backbone structure and a self-assembly model, simulated locations of the two or more via-type features are computed. The simulated locations are compared with targeted locations. If the simulated locations do not match the targeted locations based on a predetermined criterion, the simulated locations adjusted to derive modified locations. Using the modified locations, the above operations may be repeated until the simulated locations match the targeted location based on a predetermined criterion or for a predetermined number of times. | 05-21-2015 |