Patent application number | Description | Published |
20080199131 | Optical device having diffraction gratings coupling guided wave, and its manufacture method - An optical waveguide structure formed over a substrate defines an optical waveguide for guiding light along a direction parallel to the substrate surfaces, and biasing a light intensity distribution of transverse modes of guided wave toward a first side of the optical waveguide path. A main diffraction grating is disposed at least on a second side opposite to the first side, and coupled with the guided wave propagating along the optical waveguide. A subsidiary diffraction grating is disposed on the first side, and diffracts the guided wave coupled with the main diffraction grating and propagating along the optical waveguide, to a direction different from an extending direction of the optical waveguide. | 08-21-2008 |
20080291952 | OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device with a semiconductor laser formed over a semiconductor substrate, and a modulator formed over the semiconductor substrate and continuously arranged with the semiconductor laser, wherein the semiconductor laser includes a first region having a diffraction grating with a phase shift, a second region arranged between the first region and the modulator, and in which the diffraction grating is not formed, and a common active layer formed over the first region and the second region, a first electrode injecting a current into the common active layer. | 11-27-2008 |
20090052487 | OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device includes an active layer, a first semiconductor layer formed above the active layer and made from a semiconductor material containing Al, a second semiconductor layer formed above the first semiconductor layer and made from a semiconductor material which does not contain any one of Al and P and whose band gap is greater than that of the active layer, and a third semiconductor layer formed above the second semiconductor layer and made from a semiconductor material which does not contain Al but contains P. The second semiconductor layer is formed such that the first semiconductor layer and the third semiconductor layer do not contact with each other. | 02-26-2009 |
20090086785 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device is provided with a GaAs substrate, a quantum dot active layer formed over the GaAs substrate, a GaAs layer formed above or below the quantum dot active layer, and a diffraction grating formed from InGaP or InGaAsP and periodically provided along an propagating direction of light in the GaAs layer. | 04-02-2009 |
20100040100 | SEMICONDUCTOR LASER - A semiconductor laser includes an active layer, a first GaAs layer formed on the active layer, the first GaAs layer including a plurality of recessed portions periodically arranged, each of the recessed portions including a bottom surface of a (100) crystal surface and a slope including a (111) A crystal surface at least in parts, the recessed portion being disposed in contact with each other or with a minimal gap between each of adjacent ones of the recessed portions, the width of the bottom surface being greater than the minimal gaps, an InGaP layer formed on the recessed portion, and a second GaAs layer formed on the InGaAs layer over the recessed portion. | 02-18-2010 |
20100265980 | SEMICONDUCTOR LASER - A semiconductor laser includes an active region including an active layer, and a diffraction grating and a phase shift which determine an oscillation wavelength, and a distributed reflector region including a light guide layer and a refection diffraction grating. The distributed reflector region has an effective diffraction grating period which varies along a direction of a cavity. | 10-21-2010 |
20100322557 | OPTICAL DEVICE AND METHOD FOR MANUFACTURING THE SAME - An optical device including: an optical waveguide; and a plurality of diffraction grating layers provided along the optical waveguide, wherein each of the diffraction grating layers comprises a diffraction grating, each diffraction grating comprising a discontinuous first semiconductor layer and a second semiconductor layer burying the first semiconductor layer, the first and second semiconductor layers having different refractive indices, the plurality of diffraction grating layers comprise at least two diffraction grating layers being different from each other in terms of the length of a region where the diffraction grating is provided, and the diffraction gratings in an overlap region of the plurality of diffraction grating layers have the same phase and period is provided. | 12-23-2010 |
20100327257 | OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An optical semiconductor device is disclosed including an active region including an active layer and a diffraction grating having a λ/4 phase shift; passive waveguide regions each including a passive waveguide and a diffraction grating, disposed on the side of an emission facet and on the side of a rear facet sandwiching the active region between the passive waveguide regions, respectively; and an anti-reflection coating applied on the emission facet, wherein the passive waveguide region on the side of the emission facet has a length shorter than a length of the passive waveguide region on the side of the rear facet side. | 12-30-2010 |
20130267052 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor light emitting device includes forming a lower cladding layer over a GaAs substrate; forming a quantum dot active layer over the lower cladding layer; forming a first semiconductor layer over the quantum dot active layer; forming a diffraction grating by etching the first semiconductor layer; forming a second semiconductor layer burying the diffraction grating; and forming an upper cladding layer having a conductive type different from that of the lower cladding layer over the second semiconductor layer, wherein the processes after forming the quantum dot active layer are performed at a temperature not thermally deteriorating or degrading quantum dots included in the quantum dot active layer. | 10-10-2013 |
Patent application number | Description | Published |
20090056768 | LIQUID EJECTION HEAD, LIQUID EJECTION APPARATUS, AND MANUFACTURING METHOD OF LIQUID EJECTION HEAD - A liquid ejection head includes an energy-generating element arranged on a semiconductor substrate, a barrier layer deposited on the semiconductor substrate for forming a liquid chamber in the periphery of the energy-generating element, and a nozzle sheet bonded on the barrier layer and having a nozzle formed at a position opposing the energy-generating element, in which the liquid ejection head ejects liquid contained in the liquid chamber from the nozzle as liquid droplets by the energy-generating element, and the barrier layer is provided with a plurality of depressions, each having an independent contour, arranged within a range, which is separated from the border of the barrier layer, on an adhesive region adhering to the nozzle sheet. | 03-05-2009 |
20090085955 | LIQUID EJECTION HEAD, LIQUID EJECTION APPARATUS, AND MANUFACTURING METHOD OF LIQUID EJECTION HEAD - A liquid ejection head includes an energy-generating element arranged on a semiconductor substrate, a barrier layer deposited on the semiconductor substrate for forming a liquid chamber in the periphery of the energy-generating element, and a nozzle sheet bonded on the barrier layer and having a nozzle formed at a position opposing the energy-generating element, in which the liquid ejection head ejects liquid contained in the liquid chamber from the nozzle as liquid droplets by the energy-generating element, and the barrier layer is provided with a plurality of depressions, each having an independent contour, arranged within a range, which is separated from the border of the barrier layer, on an adhesive region adhering to the nozzle sheet. | 04-02-2009 |