Patent application number | Description | Published |
20120247769 | SELECTABLE, INTERNALLY ORIENTED AND/OR INTEGRALLY TRANSPORTABLE EXPLOSIVE ASSEMBLIES - A system can include multiple explosive assemblies, each assembly comprising an outer housing, an explosive component rotatable relative to the housing, and a selective firing module which causes detonation of the component in response to a predetermined signal. A method can include assembling multiple explosive assemblies at a location remote from a well, installing a selective firing module, an electrical detonator and an explosive component in a connector, and connecting the connector to an outer housing, and then transporting the assemblies from the remote location to the well. A well perforating method can include assembling multiple perforating guns, each gun comprising a gun body, a perforating charge, and a selective firing module which causes detonation of the charge in response to a predetermined signal. The guns are installed in a wellbore, with the charge of each gun rotating relative to the respective gun body. | 10-04-2012 |
20130133889 | SELECTABLE, INTERNALLY ORIENTED AND/OR INTEGRALLY TRANSPORTABLE EXPLOSIVE ASSEMBLIES - A system can include multiple explosive assemblies, each assembly comprising an outer housing, an explosive component rotatable relative to the housing, and a selective firing module which causes detonation of the component in response to a predetermined signal. A method can include assembling multiple explosive assemblies at a location remote from a well, installing a selective firing module, an electrical detonator and an explosive component in a connector, and connecting the connector to an outer housing, and then transporting the assemblies from the remote location to the well. A well perforating method can include assembling multiple perforating guns, each gun comprising a gun body, a perforating charge, and a selective firing module which causes detonation of the charge in response to a predetermined signal. The guns are installed in a wellbore, with the charge of each gun rotating relative to the respective gun body. | 05-30-2013 |
Patent application number | Description | Published |
20090121246 | LED with current confinement structure and surface roughening - An LED having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region between the p-type layer and the n-type layer, includes a confinement structure that is formed within one of the p-type layer of material and the n-type layer of material. The confinement structure is generally aligned with the contact on the top and primary emission surface of the LED and substantially prevents the emission of light from the area of the active region that is coincident with the area of the confinement structure and the top-surface contact. The LED may include a roughened emitting-side surface to further enhance light extraction. | 05-14-2009 |
20090233394 | Led with substrate modifications for enhanced light extraction and method of making same - The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. Etched features, such as truncated pyramids, may be formed on the emitting surface, prior to the RIE process, by cutting into the surface using a saw blade or a masked etching technique. Sidewall cuts may also be made in the emitting surface prior to the RIE process. A light absorbing damaged layer of material associated with saw cutting is removed by the RIE process. The surface morphology created by the RIE process may be emulated using different, various combinations of non-RIE processes such as grit sanding and deposition of a roughened layer of material or particles followed by dry etching. | 09-17-2009 |
20100032704 | LED WITH CURRENT CONFINEMENT STRUCTURE AND SURFACE ROUGHENING - An LED having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region between the p-type layer and the n-type layer, includes a confinement structure that is formed within one of the p-type layer of material and the n-type layer of material. The confinement structure is generally aligned with the contact on the top and primary emission surface of the LED and substantially prevents the emission of light from the area of the active region that is coincident with the area of the confinement structure and the top-surface contact. The LED may include a roughened emitting-side surface to further enhance light extraction. | 02-11-2010 |
20100273280 | LED WITH SUBSTRATE MODIFICATIONS FOR ENHANCED LIGHT EXTRACTION AND METHOD OF MAKING SAME - The surface morphology of an LED light emitting surface is changed by applying processes, such as a reactive ion etch (RIE) process to the light emitting surface. In one embodiment, the changed surface morphology takes the form of a moth-eye surface. The surface morphology created by the RIE process may be emulated using different combinations of non-RIE processes such as grit sanding and deposition of a roughened layer of material or particles followed by dry etching. | 10-28-2010 |
20130341663 | LED WITH SURFACE ROUGHENING - An LED having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region between the p-type layer and the n-type layer, includes a roughened emitting-side surface to further enhance light extraction. | 12-26-2013 |