Patent application number | Description | Published |
20090121119 | SEMICONDUCTOR DEVICE - The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected. | 05-14-2009 |
20090126790 | PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD OF THE SAME, AND A SEMICONDUCTOR DEVICE - A photo-sensor having a structure which can suppress electrostatic discharge damage is provided. Conventionally, a transparent electrode has been formed over the entire surface of a light receiving region; however, in the present invention, the transparent electrode is not formed, and a p-type semiconductor layer and an n-type semiconductor layer of a photoelectric conversion layer are used as an electrode. Therefore, in the photo-sensor according to the present invention, resistance is increased an electrostatic discharge damage can be suppressed. In addition, positions of the p-type semiconductor layer and the n-type semiconductor layer, which serve as an electrode, are kept away; and thus, resistance is increased and withstand voltage can be improved. | 05-21-2009 |
20090309859 | Multidirectional Photodetector, A Portable Communication Tool Having Thereof and A Method of Displaying - A photodetector of the invention is characterized by having a plurality of detector elements that are arranged over a light-transparent substrate and are connected in parallel. A foldable portable communication tool having two display portions of the invention is characterized by including one photodetector which includes a plurality of detector elements connected in parallel. | 12-17-2009 |
20100187405 | PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF - It is an object to provide a photoelectric conversion device which detects light ranging from weak light to strong light. The present invention relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer, an amplifier circuit including a thin film transistor and a bias switching means, where a bias which is connected to the photodiode and the amplifier circuit is switched by the bias switching means when intensity of incident light exceeds predetermined intensity, and accordingly, light which is less than the predetermined intensity is detected by the photodiode and light which is more than the predetermined intensity is detected by the thin film transistor of the amplifier circuit. By the present invention, light ranging from weak light to strong light can be detected. | 07-29-2010 |
20100187534 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object of the present invention to provide a semiconductor device manufactured in short time by performing the step of forming the thin film transistor and the step of forming the photoelectric conversion layer in parallel, and to provide a manufacturing process thereof. According to the present invention, a semiconductor device is manufactured in such a way that a thin film transistor is formed over a first substrate, a photoelectric conversion element is formed over a second substrate, and the thin film transistor and the photoelectric conversion element are connected electrically by sandwiching a conductive layer between the first and second substrates opposed to each other so that the thin film transistor and the photoelectric conversion element are located between the first and second substrates. Thus, a method for manufacturing a semiconductor device which suppresses the increase in the number of steps and which increases the throughput can be provided. | 07-29-2010 |
20100330729 | PHOTOELECTRIC CONVERSION DEVICE, MANUFACTURING METHOD THEREOF AND SEMICONDUCTOR DEVICE - The present invention provides a photoelectric conversion device in which a leakage current is suppressed. A photoelectric conversion device of the present invention comprises: a first electrode over a substrate; a photoelectric conversion layer including a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode, wherein an end portion of the first electrode is covered with the first semiconductor layer; an insulating film, and a second electrode electrically connected to the third semiconductor film with the insulating film therebetween, over the insulating film, are formed over the third semiconductor film, and wherein a part of the second semiconductor layer and a part of the third semiconductor layer is removed in a region of the photoelectric conversion layer, which is not covered with the insulating film. | 12-30-2010 |
20110062543 | SEMICONDUCTOR DEVICE - The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected. | 03-17-2011 |
20110232571 | FILM FORMATION APPARATUS, METHOD FOR FORMING FILM, AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus. | 09-29-2011 |
20110291090 | Photoelectric Conversion Device, Manufacturing Method Thereof And Semiconductor Device - A manufacturing method of a photoelectric conversion device includes the following steps: forming a first electrode over a substrate; and, over the first electrode, forming a photoelectric conversion layer that includes a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode. The manufacturing method further includes the step of removing a part of the second semiconductor layer and a part of the third semiconductor layer in a region of the photoelectric conversion layer so that the third semiconductor layer does not overlap the first electrode. | 12-01-2011 |
Patent application number | Description | Published |
20080203515 | Photoelectric conversion device and electronic device, and method for manufacturing photoelectric conversion device - A photoelectric conversion device includes: a first substrate of which end portions are cut off so as to slope or with a groove shape; a photodiode and an amplifier circuit over the first substrate; a first electrode electrically connected to the photodiode and provided over one end portion of the first substrate; a second electrode electrically connected to the amplifier circuit and provided over an another end portion of the first substrate; and a second substrate having third and fourth electrodes thereon. The first and second electrodes are attached to the third and fourth electrodes, respectively, with a conductive material provided not only at the surfaces of the first, second, third, and fourth electrodes facing each other but also at the side surfaces of the first and second electrodes to increase the adhesiveness between a photoelectric conversion device and a member on which the photoelectric conversion device is mounted. | 08-28-2008 |
20080265351 | Semiconductor device and method of fabricating the same - In fabrication of a semiconductor device mounted on a wiring board, a semiconductor circuit portion is formed over a glass substrate. Then, an interposer having connection terminals are bonded to the semiconductor circuit portion. After that, the glass substrate is peeled off from the semiconductor circuit portion, and a mold resin is poured to cover the periphery of the semiconductor circuit portion from a direction of the separation plane. Then, the mold resin is heated under predetermined conditions to be hardened. | 10-30-2008 |
20080308851 | Photoelectric conversion element having a semiconductor and semiconductor device using the same - A semiconductor device, particularly, a photoelectric conversion element having a semiconductor layer is demonstrated. The photoelectric conversion element of the present invention comprises, over a substrate, a photoelectric conversion layer and first and second electrodes which are electrically connected to the photoelectric conversion layer. The photoelectric conversion element further comprises a wiring board over which a third and fourth electrodes are provided. The characteristic point of the present invention is that a bonding layer, which readily forms an alloy with a conductive material, is formed over the first and second electrodes. This bonding layer improves the bonding strength between the first and third electrodes and the second and fourth electrode, which contributes to the prevention of the connection defect between the substrate and the wiring board and consequentially to high reliability of the photoelectric conversion element. | 12-18-2008 |
20090194154 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - An object is to reduce the breakage of appearance such as a crack, a split and a chip by external stress of a semiconductor device. Another object is that manufacturing yield of a thin semiconductor device increases. The semiconductor device includes a plurality of semiconductor integrated circuits mounted on the interposer. Each of the plurality of semiconductor integrated circuits includes a light transmitting substrate which have a step on the side surface and in which the width of one section of the light transmitting substrate is narrower than that of the other section of the light transmitting substrate when the light transmitting substrate is divided at a plane including the step, a semiconductor element layer including a photoelectric conversion element provided on one surface of the light transmitting substrate, and a chromatic color light transmitting resin layer which covers the other surface of the light transmitting substrate and a part of the side surface. The colors of the chromatic color light transmitting resin layers are different in each of the plurality of semiconductor integrated circuits. | 08-06-2009 |
20110012218 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - In fabrication of a semiconductor device mounted on a wiring board, a semiconductor circuit portion is formed over a glass substrate. Then, an interposer having connection terminals are bonded to the semiconductor circuit portion. After that, the glass substrate is peeled off from the semiconductor circuit portion, and a mold resin is poured to cover the periphery of the semiconductor circuit portion from a direction of the separation plane. Then, the mold resin is heated under predetermined conditions to be hardened. | 01-20-2011 |
20120086006 | SEMICONDUCTOR DEVICE - Techniques are provided for obtaining a photoelectric conversion device having a favorable spectral sensitivity characteristic and reduced variation in output current without a contamination substance mixed into a photoelectric conversion layer or a transistor, and for obtaining a highly reliable semiconductor device including a photoelectric conversion device. A semiconductor device may include, over an insulating surface, a first electrode; a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer over the overcoat layer, where one end portion of the photoelectric conversion layer is in contact with the first electrode, and where an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer. | 04-12-2012 |
20120256286 | PHOTOELECTRIC CONVERSION DEVICE AND ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion device includes: a first substrate of which end portions are cut off so as to slope or with a groove shape; a photodiode and an amplifier circuit over the first substrate; a first electrode electrically connected to the photodiode and provided over one end portion of the first substrate; a second electrode electrically connected to the amplifier circuit and provided over an another end portion of the first substrate; and a second substrate having third and fourth electrodes thereon. The first and second electrodes are attached to the third and fourth electrodes, respectively, with a conductive material provided not only at the surfaces of the first, second, third, and fourth electrodes facing each other but also at the side surfaces of the first and second electrodes to increase the adhesiveness between a photoelectric conversion device and a member on which the photoelectric conversion device is mounted. | 10-11-2012 |
Patent application number | Description | Published |
20100307557 | PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING THE SAME - A multi junction photoelectric conversion device that can be manufactured by a simple method is provided. In addition, a photoelectric conversion device whose mechanical strength is increased without complicating a manufacturing process is provided. A photoelectric conversion device includes a first cell having a photoelectric conversion function, a second cell having a photoelectric conversion function, and a structure body including a fibrous body, which firmly attaches and electrically connects the first cell and the second cell to each other. Accordingly, a multi-junction photoelectric conversion device in which semiconductor junctions are connected in series and sufficient electrical connection between p-i-n junctions is ensured can be provided. | 12-09-2010 |
20100307558 | PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF - To provide a multi junction photoelectric conversion device which can be manufactured using a simple method. The photoelectric conversion device includes a first cell provided with a photoelectric conversion function, a second cell provided with a photoelectric conversion function, and a structure body having a function of fixing the first cell and the second cell to each other and electrically connecting the first cell and the second cell to each other. A multi junction photoelectric conversion device in which sufficient conductivity between p-i-n junctions is provided and semiconductor junctions are connected in series can be provided. With this structure, it is possible to obtain sufficient electromotive force. | 12-09-2010 |
20100307559 | PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a photoelectric conversion device whose mechanical strength is increased without complicating a manufacturing process. The photoelectric conversion device includes a first cell having a photoelectric conversion function, a second cell having a photoelectric conversion function, and a structure body including a fibrous body which firmly attaches the first cell and the second cell. As a result, p-i-n junctions are bonded with the structure body in which the fibrous body is impregnated with an organic resin, which is a so-called prepreg. Thus, a photoelectric conversion device whose mechanical strength is increased can be realized while the manufacturing cost is reduced. | 12-09-2010 |
20100307590 | PHOTOELECTRIC CONVERSION DEVICE - The present invention provides a technique in which a cheap zinc oxide material can be used as a light-transmitting conductive film of a photoelectric conversion device. The present invention is a photoelectric conversion device including, between a first electrode and a second electrode, at least one unit cell in which a first impurity semiconductor layer having one conductivity type, a semiconductor layer, and a second impurity semiconductor layer having a conductivity type opposite to the first impurity semiconductor layer are sequentially stacked and a semiconductor junction is included. The first electrode or the second electrode includes conductive oxynitride containing zinc and aluminum. In the conductive oxynitride containing zinc and aluminum: the relative proportion of the zinc is less than or equal to 47 at. % and higher than that of the aluminum; and the relative proportion of the aluminum is higher than that of nitrogen. | 12-09-2010 |
20110000545 | Photoelectric Conversion Device and Manufacturing Method Thereof - A stack including a first electrode, a first impurity semiconductor layer having one conductivity type, an intrinsic semiconductor layer, a second impurity semiconductor layer having an opposite conductivity type to the one conductivity type, and a light-transmitting second electrode is formed over an insulator. The light-transmitting second electrode and the second impurity semiconductor layer have one or more openings. The shortest distance between one portion of the wall of one opening and an opposite portion of the wall of the same opening at the level of the interface between the second impurity semiconductor layer and the intrinsic semiconductor layer is made smaller than the diffusion length of holes in the intrinsic semiconductor layer. Thus, recombination is suppressed, so that more photocarriers are generated due to the openings and taken out as current, whereby conversion efficiency is increased. | 01-06-2011 |
20120042926 | Photoelectric Conversion Module and Manufacturing Method Thereof - A photoelectric conversion module in which an output voltage defect is suppressed is obtained by forming in parallel over a substrate n number (n is a natural number) of integrated photoelectric conversion devices each including a plurality of cells that are connected in series, and electrically connecting in parallel n−1 number or less of integrated photoelectric conversion devices with normal electrical characteristics and excluding an integrated photoelectric conversion device with a characteristic defect such as a short-circuit between top and bottom electrodes or a leak current due to a structural defect or the like formed in a semiconductor layer or the like. | 02-23-2012 |
20120104862 | PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion device includes at least two photoelectric conversion elements which have voltage-current characteristics different from each other. Further, one of the photoelectric conversion elements has photoelectric conversion efficiency higher than that of the other photoelectric conversion element under the environment in which room light can be obtained. Furthermore, the other photoelectric conversion element has photoelectric conversion efficiency higher than the one of the photoelectric conversion elements under the environment in which sunlight can be obtained. Moreover, each of the voltage of electric power generated in the at least two photoelectric conversion elements is adjusted by one of at least two DC-DC converters corresponding the photoelectric conversion element. In addition, part of the electric power generated in the one of the photoelectric conversion elements is used as drive electric power of the at least two DC-DC converter. | 05-03-2012 |
20140220730 | PHOTOELECTRIC CONVERSION DEVICE AND FABRICATION METHOD THEREOF - In a thin film photoelectric conversion device fabricated by addition of a catalyst element with the use of a solid phase growth method, defects such as a short circuit or leakage of current are suppressed. A catalyst material which promotes crystallization of silicon is selectively added to a second silicon semiconductor layer formed over a first silicon semiconductor layer having one conductivity type, the second silicon semiconductor layer is partly crystallized by a heat treatment, a third silicon semiconductor layer having a conductivity type opposite to the one conductivity type is stacked, and element isolation is performed at a region in the second silicon semiconductor layer to which a catalyst material is not added, so that a left catalyst material is prevented from being diffused again, and defects such as a short circuit or leakage of current are suppressed. | 08-07-2014 |
Patent application number | Description | Published |
20110192452 | PHOTOELECTRIC CONVERSION DEVICE AND FABRICATION METHOD THEREOF - In a thin film photoelectric conversion deice fabricated by addition of a catalyst element with the use of a solid phase growth method, defects such as a short circuit or leakage of current are suppressed. A catalyst material which promotes crystallization of silicon is selectively added to a second silicon semiconductor layer formed over a first silicon semiconductor layer having one conductivity type, the second silicon semiconductor layer is partly crystallized by a heat treatment, a third silicon semiconductor layer having a conductivity type opposite to the one conductivity type is stacked, and element isolation is performed at a region in the second silicon semiconductor layer to which a catalyst material is not added, so that a left catalyst material is prevented from being diffused again, and defects such as a short circuit or leakage of current are suppressed. | 08-11-2011 |
20110303272 | Photoelectric Conversion Device and Manufacturing Method Thereof - An object is to provide a photoelectric conversion device in which defects are suppressed as much as possible by filling a separation process region of a semiconductor film with an insulating resin. A photoelectric conversion device includes a first conductive layer formed over a substrate; first to third semiconductor layers formed over the first conductive layer; a second conductive layer formed over the third semiconductor layer; a first separation groove for separating the first conductive layer and the first to third semiconductor layers into a plurality of pieces; a second separation groove for separating the first to third semiconductor layers into a plurality of pieces; and a third separation groove for separating the second conductive layer into a plurality of pieces. An insulating resin is filled in a structural defect that exists in at least one of the first to third semiconductor layers, and in the first separation groove. | 12-15-2011 |
20110308588 | PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF - A photoelectric conversion device having a high electric generating capacity at low illuminance, in which a semiconductor layer is appropriately separated and short circuit of a side surface portion of a cell is prevented. The photoelectric conversion device includes an isolation groove formed between one first electrode and the other first electrode that is adjacent to the one first electrode; a stack including a first semiconductor layer having one conductivity type over the first electrode, a second semiconductor layer formed using an intrinsic semiconductor, and a third semiconductor layer having a conductivity type opposite to the one conductivity type; and a connection electrode connecting one first electrode and a second electrode that is in contact with a third semiconductor layer included in a stack formed over the other first electrode that is adjacent to the one first electrode. A side surface portion of the second semiconductor layer is not crystallized. | 12-22-2011 |