Patent application number | Description | Published |
20080284697 | DISPLAY APPARATUS - A display apparatus includes a first substrate, a second substrate, and a driver chip. The first substrate includes a plurality of gate lines disposed in the display area and extended in a first direction, a plurality of data lines disposed on a gate insulating layer insulating the gate lines and extended in a second direction substantially perpendicular to the first direction, and a gate driving circuit section disposed in the first peripheral area adjacent to first ends of the gate lines. The second substrate is opposite to the first substrate. A liquid crystal is interposed between the first and second substrates. The driver chip is disposed in the second peripheral area adjacent to second ends of the gate lines opposite to the first ends so that the width of the upper and lower portions of the display area may be decreased. | 11-20-2008 |
20090163000 | METHOD FOR FABRICATING VERTICAL CHANNEL TRANSISTOR IN A SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes forming a sacrificial layer over a substrate, forming a contact hole in the sacrificial layer, forming a pillar to fill the contact hole. The pillar laterally extends up to a surface of the sacrificial layer and then the sacrificial layer is removed. The method further includes forming a gate dielectric layer over an exposed sidewall of the pillar, and forming a gate electrode over the gate dielectric layer. The gate electrode surrounds the sidewall of the pillar. | 06-25-2009 |
20100283805 | BACKLIGHT ASSEMBLY AND COVER FOR A COMPACT DISPLAY APPARATUS - A back cover for a backlight assembly capable of achieving a more compact a display apparatus includes a cover element, a line portion, and a plurality of point light sources. The cover element includes a metallic layer, and the cross-section of the cover element has an L-shape. The line portion is formed over the cover element. The point light sources are mounted on the surface of the cover element to receive a driving voltage from the line portion. A bottom cover portion of the cover element covers an opening portion. A side cover portion of the cover element faces the side wall. The point light sources mounted on the cover element emit light on a side surface of a light guide plate. | 11-11-2010 |
Patent application number | Description | Published |
20100045532 | ANTENNA USING ELECTRICALLY CONDUCTIVE INK AND PRODUCTION METHOD THEREOF - Disclosed is an antenna having an antenna radiator formed by printing electrically conductive ink on a substrate. An antenna radiator according to an embodiment of the present invention is formed to the same thickness as a skin depth with respect to an operation frequency of the antenna. Therefore, an antenna can be fabricated using a small amount of electrically conductive ink while not reducing the gain of the antenna. Further, an antenna radiator according to another embodiment of the present invention is formed to the same thickness as a skin depth with respect to a predetermined frequency at a corresponding hot spot with respect to the frequency. Accordingly, an amount of electrically conductive ink used can be further reduced while maintaining the gain of the antenna. | 02-25-2010 |
20100122694 | Oil Separation Apparatus For Blow-By Gas - An oil separation apparatus may include an intake housing provided with a gas inlet for the blow-by gas to be sucked therein, a plurality of cyclone which is formed as a cone, is disposed around the intake housing, is communicated with intake housing through an intake passage and separates oil from the blow-by gas, wherein a gas exit is formed to the upper side of the cyclone for discharging the blow-by gas and an oil outlet is formed to the lower side of the cyclone for discharging the separated oil, an exhaust housing cylinder which is provided with an gas outlet, is communicated with the gas exit and discharges the blow-by gas through the gas outlet and a control unit which is disposed within the intake and exhaust housing and selectively opens the intake passages according to intake pressure of the engine. | 05-20-2010 |
20120018663 | FERRITE FOR HIGH-FREQUENCY APPLICATIONS AND MANUFACTURING METHOD THEREOF - Disclosed are a ferrite for high-frequency applications and a manufacturing method thereof. The ferrite comprises the elements Mg, Cu, Fe, and O, in which the elements have a composition ratio represented by the formula Mg | 01-26-2012 |
20120140437 | LIGHTING MODULE AND LIGHTING DEVICE - A lighting module may be provided that includes: a light emitter; a clad metal substrate which is disposed under the light emitter; an insulating structure which insulates the light emitter from the clad metal substrate; an optical structure which is disposed on the light emitter; and a case which is disposed on the optical structure and is coupled to the clad metal substrate, wherein the light emitter includes a semiconductor based light emitting device. | 06-07-2012 |
20130147539 | DOWN-CONVERTER, UP-CONVERTER, RECEIVER AND TRANSMITTER APPLYING THE SAME - A down-frequency conversion circuit and up-frequency conversion circuit, and a receiver and transmitter applying the same are provided. The down-frequency conversion circuit includes a harmonic mixer and general mixer, and thus becomes able to convert frequency using one LO (Local Oscillator) frequency, thereby reducing burden on generating LO frequency. | 06-13-2013 |
20130154760 | BONDING WIRE IMPEDANCE MATCHING CIRCUIT - An impedance matching circuit is provided. The present impedance matching circuit is able to match impedance using a transformer which is arranged inside a dielectric substrate and arranged to overlap with a bonding pad area and an end of a transmission line, thereby enabling transmitting signals at a desired frequency with a minimum insertion loss without using a very thin transmission line which is several to dozens of μm wide or specially designed antennas in order to compensate for inductance. Thus, the present impedance matching circuit may be applied to various millimeter bands. | 06-20-2013 |
20140139298 | RF SWITCH WITH TRANSFORMER AND SWITCHING METHOD THEREOF - A radio frequency (RF) switch with a transformer and a switching method thereof are provided. The RF switch includes a transmitting end transformer having a primary side connected to a transmitting end and a secondary side connected to an antenna; and a receiving end transformer having a primary side connected to the antenna and a secondary side connected to a receiving end. In a transmission mode, the transmitting end transformer is tuned on, and, in a reception mode, the receiving end transformer is turned on. Accordingly, since switching is performed based on transformers rather than transistors connected in series, the RS switch, which can achieve high linearity and low insertion loss as well as high isolation, can be implemented. | 05-22-2014 |
20140312933 | LOW NOISE COMPARATOR FOR HIGH RESOLUTION ADC - A low noise comparator for a high resolution ADC is provided. The comparator includes: an inputter configured to receive a signal and amplify the signal; and an outputter configured to output a result of comparing the signal output from the inputter, wherein an inductor is connected to an input terminal of an input element of at least one of the inputter and the outputter. Accordingly, the comparator can satisfy the gain value and the noise performance at the same time by using the inductor which has no voltage headroom problem. | 10-23-2014 |
20140370262 | THREE-DIMENSIONAL GRAPHENE STRUCTURE, AND PREPARATION METHOD THEREOF - A method of preparing a three-dimensional graphene structure, and a graphene structure prepared by the method are provided. The method includes preparing a dispersion in which a graphite oxide is dispersed, and preparing a gel by controlling a degree of reduction of the dispersion. The method can be useful in providing a three-dimensional graphene structure having a specific surface area, a pore size or a volume per unit mass, which is suitable for the field of applications thereof. | 12-18-2014 |
20150029060 | WIRELESS COMMUNICATION DEVICE - A wireless communication device having a stable capacity of an antenna even if a terminal is bent or folded is disclosed. The wireless communication device includes an antenna, a first ground portion to which the antenna is grounded, and a second ground portion that is electrically separated from the first ground portion, and the wireless communication device is bent around a boundary between the first ground portion and the second ground portion. | 01-29-2015 |
Patent application number | Description | Published |
20090026928 | PHENYLPHENOXAZINE OR PHENYLPHENOTHIAZINE- BASED COMPOUND AND ORGANIC ELECTROLUMINESCENT DEVICE USING THE SAME - Provided are a phenylphenoxazine- or phenylphenothiazine-based compound and an organic electroluminescent device using the same. The phenylphenoxazine- or phenylphenothiazine-based compound is easily prepared, easily dissolved, and has excellent hole injection properties and excellent thermal stability. Accordingly, the compound is suitable for an organic layer of the organic electroluminescent device, specifically, a hole injection layer or a hole transport layer. In addition, the compound is suitable for an organic pigment or an electronic material, such as a nonlinear optical material. | 01-29-2009 |
20090309491 | ORGANIC LIGHT EMITTING DEVICE COMPRISING LAYER COMPRISING ORGANIC-METAL COMPLEX AND METHOD OF PREPARING THE SAME - Provided are an organic light emitting device including a substrate; a first electrode; a second electrode; and an organic layer interposed between the first electrode and the second electrode, wherein the organic layer includes a first layer including an organic-metal complex represented by Formula 1 below, and a method of preparing the same: | 12-17-2009 |
20110193069 | ORGANIC LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light emitting device and a method of manufacturing the same, the organic light emitting device includes a first electrode, a second electrode, and an organic layer that has at least a multi-coated emissive layer and which is interposed between the first and second electrodes. The multi-coated emissive layer is a single layer composed of a neutral emissive material and an n | 08-11-2011 |
Patent application number | Description | Published |
20090286369 | Method of manufacturing a semiconductor device - In a method of manufacturing a semiconductor device, a tunnel insulation layer is formed on a substrate. A charge trapping layer is formed on the tunnel insulation layer. A protection layer pattern or a mold is formed on the charge trapping layer. Charge trapping layer patterns are formed on the tunnel insulation layer by etching the charge trapping layer using the protection layer pattern or the mold. The charge trapping layer patterns may be spaced apart from each other. Blocking layers are formed on the charge trapping layer patterns, respectively. A gate electrode is formed on the blocking layers and the tunnel insulation layer using the protection layer pattern or the mold. | 11-19-2009 |
20110187004 | SEMICONDUCTOR DEVICES INCLUDING AN INTERCONNECTION PATTERN AND METHODS OF FABRICATING THE SAME - A semiconductor device includes a first insulating layer having a plurality of via plugs therein, a second insulating layer on the first insulating layer, and a conducting interconnection pattern disposed in the second insulating layer and having at least one interconnection landing arranged over and electrically connected to the via plugs. | 08-04-2011 |
20140043896 | METHOD OF PREVENTING PROGRAM-DISTURBANCES FOR A NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE - A method of preventing program-disturbances for a non-volatile semiconductor memory device having a plurality of memory cells of which each includes a selection transistor and a memory transistor coupled in series between a bit-line and a common source-line is provided. First non-selected memory cells that share a first selection-line with a selected memory cell, and second non-selected memory cells that do not share the first selection-line with the selected memory cell are determined when the selected memory cell is selected to be programmed among the memory cells. A negative voltage is applied to second selection-lines that are coupled to the second non-selected memory cells when the selected memory cell is programmed by applying a positive voltage to the first selection-line that is coupled to the selected memory cell. | 02-13-2014 |
20140183741 | MASK READ-ONLY MEMORY (ROM) AND METHOD FOR FABRICATING THE SAME - A mask ROM includes a plurality of conductive pads disposed on a substrate, an insulating film disposed on the conductive pads, a plurality of via holes disposed in the insulating film exposing the conductive pads, a plurality of first wirings disposed side by side and spaced apart from each other on the insulating film, a plurality of vias disposed in the via holes electrically connecting the conductive pads to the first wirings, respectively, and a plurality of barrier conductive films disposed on a bottom surface of a part of the plurality of via holes between the vias and the conductive pads. | 07-03-2014 |
20140353820 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - Semiconductor device and method for fabricating the same are provided. The semiconductor device comprises a first metal wiring line, a chip pad which is electrically connected with the first metal wiring line and has a first width, a passivation layer which encloses the chip pad and includes a contact hole, a first barrier pattern formed on a side wall of the contact hole and a top surface of the passivation layer, a contact filling the contact hole on the first barrier pattern, and a bump, which is formed of the same material as the contact, has a second width which is smaller than the first width, and is overlaid with the first metal wiring line and the chip pad, the bump being entirely overlapped with the chip pad. | 12-04-2014 |
Patent application number | Description | Published |
20090242945 | Semiconductor device and method of fabricating the same - In a method of fabricating a semiconductor device on a substrate having a pillar pattern, a gate electrode is formed on the pillar pattern without etching the latter. A conductive pattern is filled between adjacent pillar patterns, a spacer is formed above the conductive pattern and surrounding sidewalls of each pillar pattern, and the gate electrode is formed by etching the conductive pattern using the spacer as an etch barrier. | 10-01-2009 |
20090242971 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - In a method of fabricating a semiconductor device on a substrate which includes a plurality of pillar patterns, an impurity region between adjacent pillar patterns, a gate electrode on each pillar pattern, a first capping layer covering the gate electrode, and a separation layer covering the first capping layer between the gate electrodes of adjacent pillar patterns, the first capping layer is removed except for a portion contacting the separation layer, a sacrificial layer is formed to cover the gate electrode, a second capping layer is formed on sidewalls of each pillar pattern, the sacrificial layer is removed and a word line connecting the gate electrodes of the adjacent pillar patterns is formed. In the manufactured device, the first capping layer isolates the impurity region from the word line and the second capping region prevents the sidewalls of the respective pillar pattern from being exposed. | 10-01-2009 |
20090253254 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - In a method of fabricating a semiconductor device having vertical channels and a method of patterning a gate electrode of such semiconductor device, an initial conductive layer is removed by multiple etching processes. | 10-08-2009 |
20110254081 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - In a method of fabricating a semiconductor device on a substrate which includes a plurality of pillar patterns, an impurity region between adjacent pillar patterns, a gate electrode on each pillar pattern, a first capping layer covering the gate electrode, and a separation layer covering the first capping layer between the gate electrodes of adjacent pillar patterns, the first capping layer is removed except for a portion contacting the separation layer, a sacrificial layer is formed to cover the gate electrode, a second capping layer is formed on sidewalls of each pillar pattern, the sacrificial layer is removed and a word line connecting the gate electrodes of the adjacent pillar patterns is formed. In the manufactured device, the first capping layer isolates the impurity region from the word line and the second capping region prevents the sidewalls of the respective pillar pattern from being exposed. | 10-20-2011 |
Patent application number | Description | Published |
20130186339 | Dry Coating Apparatus - Provided is a dry coating apparatus for coating a coating material, i.e., deposition vapor (metal vapor) on a substrate (a steel strip). The dry coating apparatus includes a coating part disposed in a vacuum to coat deposition vapor generated through heating and evaporation of a supplied coating material onto a proceeding object to be coated and a heating source disposed in an atmosphere to heat and levitate the coating material in the coating part. | 07-25-2013 |
20130186524 | Al PLATING LAYER/Al-Mg PLATING LAYER MULTI-LAYERED STRUCTURE ALLOY PLATED STEEL SHEET HAVING EXCELLENT PLATING ADHESIVENESS AND CORROSION RESISTANCE, AND METHOD OF MANUFACTURING THE SAME - Provided is an aluminum (Al) plating layer/aluminum (Al)-magnesium (Mg) plating layer multi-layered structure alloy plated steel sheet having excellent plating adhesiveness and corrosion resistance, which is characterized in that the Al—Mg plating layer is formed on the Al plating layer. According to the present invention, corrosion resistance of an Al plated steel sheet is further improved by forming an Al—Mg alloy plating layer, and plating adhesiveness between plating layer and underlying steel sheet may be improved as well as excellent stability and practicality being realized. | 07-25-2013 |
20130199447 | Continuous Coating Apparatus - Provided is a continuous coating apparatus which can supply a liquid coating material (a molten metal) to a levitation-heating space through various paths, and can easily control a supply flow rate of the liquid coating material, and has a simplified structure. The continuous coating apparatus includes: a vacuum chamber unit through which a coating target passes; a levitation-heating unit disposed in the vacuum chamber unit and generating an evaporation vapor by vaporizing a supplied coating material; and a liquid coating material supply unit connected so that a liquid coating material is supplied to at least one of an upper portion and a lower portion of the levitation-heating unit, and communicating with the outside of the vacuum chamber unit. | 08-08-2013 |
20140011048 | FILM FORMATION COMPOSITION FOR PREVENTING BLACKENING OF STEEL SHEET, AND STEEL SHEET HAVING FILM FORMED BY COMPOSITION - Provided is a film formation composition for improving the blackening of the surface of a steel sheet, particularly, the surface of a steel sheet containing Mg on the surface thereof, such as a Mg sheet, a plated steel sheet having a plated layer comprising Mg, and the like, a steel sheet comprising a film formed by the composition, and a method for forming the film. Provided are a film formation composition for preventing the blackening of the surface of the steel sheet, comprising: 2.5-7.5 parts by weight of a water-soluble phenoxy resin; 0.1-0.5 parts by weight of a fluorometal acid; 0.1-0.5 parts by weight of a metal compound; and 1-5 parts by weight of a cross-linking agent. | 01-09-2014 |