Patent application number | Description | Published |
20130026937 | LIGHTING DEVICE AND ILLUMINATION APPARATUS USING SAME - A light emitting element lighting device includes: a rectifying unit which rectifies an AC voltage; a smoothing unit which smoothes a ripple voltage from the rectifying unit; a power supply unit having a switching element; and a control unit which controls on/off of the switching element. Further, the smoothing unit servers as a partial smoothing circuit for partially smoothing a low voltage period of the ripple voltage outputted from the rectifying unit. The power supply unit supplies a lighting power to a light source unit including one or more light emitting elements. The control unit controls a switching frequency of the switching element to decrease as the output voltage of the smoothing unit decreases. | 01-31-2013 |
20130134884 | ORGANIC EL ELEMENT LIGHTING DEVICE AND LIGHTING FIXTURE USING THE SAME - An object of the present invention is to provide an organic EL element lighting device whereby surge current can be reduced at start-up while controlling start-up variation, along with a lighting fixture using the same. Provided are a current supply part for supplying lighting current to a light source formed of one or more organic EL elements and connected between output terminals of the current supply part, a current detection part for detecting the lighting current, a target setting part for setting a target value of the lighting current, and a control part for performing feedback control of the lighting current by controlling the current supply part so that the detected value of the current detection part matches the target value of the lighting current. The target setting part has a sweep period during which the target value is gradually increased at start-up of the light source. | 05-30-2013 |
20130175937 | WIRELESS POWER SUPPLY SYSTEM FOR LIGHTING AND LIGHTING APPARATUS - A wireless power supply system for lighting includes: a power transmission unit including a power transmission coil; and a power reception unit including a power reception coil. The power transmission coil generates an AC magnetic field in response to a supplied AC power. The power reception coil receives an electric power from the power transmission unit through an electromagnetic induction due to the AC magnetic field generated by the power transmission coil. The power reception unit further includes a power circuit and a receive-side control section. The power circuit receives an output power from the power reception coil and to perform Buck-Boost operation so as to output a predetermined electric power to a lighting load. The receive-side control section controls the Buck-Boost operation of the power circuit. The power circuit is configured to be capable of boosting and stepping-down of the output power from said power reception coil. | 07-11-2013 |
20140015443 | LIGHT EMITTING ELEMENT LIGHTING DEVICE AND LIGHTING FIXTURE USING SAME - The light emitting element lighting device in accordance with the present invention, includes: a light emitting unit including a light emitting element; and a power supply circuit configured to supply a supply voltage to the light emitting unit. The power supply circuit is configured to increase the supply voltage from a first voltage lower than a lighting start voltage of the light emitting element to a second voltage higher than the lighting start voltage to light up the light emitting unit. The power supply circuit is configured to, in a process of increasing the supply voltage from the first voltage to the second voltage, decrease a rate of increase in the supply voltage as the supply voltage gets closer to the second voltage. | 01-16-2014 |
Patent application number | Description | Published |
20080237535 | Composition for polishing semiconductor wafer, and method of producing the same - A composition for polishing a semiconductor wafer contains fumed silica particles that are produced by wet grinding using a grinding medium and that have characteristics (A) to (C): | 10-02-2008 |
20090253813 | Colloidal silica consisting of silica particles fixing nitrogen contained alkaline compound - A colloidal silica comprising, silica particles inside of which or on the surface of which a nitrogen containing alkaline compound is fixed, wherein said silica particles are prepared by forming and growing colloid particles using the nitrogen containing alkaline compound. Said colloidal silica can be prepared by preparing active silicic acid aqueous solution contacting silicate alkali aqueous solution with cation exchange resin, adding the nitrogen containing alkaline compound and heating, and then growing up particles by build-up method. | 10-08-2009 |
20090267021 | Colloidal silica for semiconductor wafer polishing and production method thereof - Colloidal silica forming nonspherical particles cluster, whose long axis/short axis ratio of silica particles is of 1.2 to 20, and average long axis/short axis ratio of 3 to 15. This colloidal silica can be produced by forming particles by adding basic nitrogen compounds to an active silicic acid aqueous solution, the solution which produced by hydrolysis of tetraalkoxysilane, while heating, then growing particles by using a build up method. | 10-29-2009 |
20100163786 | Polishing composition for semiconductor wafer - A polishing composition for semiconductor wafer polishing comprising, colloidal silica prepared from an active silicic acid aqueous solution obtained by removal of alkali from alkali silicate and at least one nitrogen containing basic compound selected from a group consisting of ethylenediamine, diethylenediamine, imidazole, methylimidazole, piperidine, morpholine, arginine, and hydrazine, wherein pH of the colloidal silica is of 8.5 to 11.0 at 25° C. by containing quaternary ammonium hydroxide. | 07-01-2010 |
Patent application number | Description | Published |
20110068359 | Light-emitting element - A light-emitting element includes a semiconductor laminated structure including a first semiconductor layer, a light-emitting layer and a second semiconductor layer, an insulation layer provided on the semiconductor laminated structure, a first wiring including a first vertical conducting portion and a first planar conducting portion and being electrically connected to the first semiconductor layer, the first vertical conducting portion extending inside the insulation layer, the light-emitting layer and the second semiconductor layer in a vertical direction and the first planar conducting portion extending inside the insulation layer in a planar direction, and a second wiring including a second vertical conducting portion and a second planar conducting portion and being electrically connected to the second semiconductor layer, the second vertical conducting portion extending inside the insulation layer in a vertical direction and the second planar conducting portion extending inside the insulation layer in a planar direction. | 03-24-2011 |
20120241720 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A Group III nitride semiconductor light-emitting device, includes a groove having a depth extending from the top surface of a p-type layer to an n-type layer is provided in a region overlapping (in plan view) with the wiring portion of an n-electrode or the wiring portion of a p-electrode. An insulating film is provided so as to continuously cover the side surfaces and bottom surface of the groove, the p-type layer, and an ITO electrode. The insulating film incorporates therein reflective films in regions directly below the n-electrode and the p-electrode (on the side of a sapphire substrate). The reflective films in regions directly below the wiring portion of the n-electrode and the wiring portion of the p-electrode are located at a level lower than that of a light-emitting layer. The n-electrode and the p-electrode are covered with an additional insulating film. | 09-27-2012 |
20120248406 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present invention provides a Group III nitride semiconductor light-emitting device exhibiting high-intensity light output in a specific direction and improved light extraction performance. The Group III nitride semiconductor light-emitting device comprises a sapphire substrate, and a layered structure having a light-emitting layer provided on the sapphire substrate and formed of a Group III nitride semiconductor. On the surface on the layered structure side of the sapphire substrate, a two-dimensional periodic structure of mesas is formed with a period which generates a light intensity interference pattern for the light emitted from the light-emitting layer. The light reflected by or transmitted through the two-dimensional periodic structure has an interference pattern. Therefore, the light focused on a region where the light intensity is high in the interference pattern can be effectively output to the outside, resulting in the improvement of light extraction performance as well as the achievement of desired directional characteristics. | 10-04-2012 |
20130011953 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE - To improve light emission efficiency and reliability. | 01-10-2013 |
20150083997 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A face-up-type Group III nitride semiconductor light-emitting device includes a growth substrate, an n-type layer, a light-emitting layer, a p-type layer, an n-electrode including a bonding portion and a wiring portion, a p-electrode including a bonding portion and a wiring portion, and a first insulating film. The n-type layer, the light-emitting layer, and the p-type layer are sequentially stacked on the growth substrate, and the n-electrode and the p-electrode are formed on the first insulating film. A groove having a depth extending from a top surface of the p-type layer to the n-type layer is formed in at least one region selected from a region directly below the wiring portion of the n-electrode and a region directly below the wiring portion of the p-electrode. The wiring portion, which is formed in the groove, is located at a level lower than that of the light-emitting layer. | 03-26-2015 |
Patent application number | Description | Published |
20090027706 | Printing apparatus, and method and program for controlling the printing device - A printing apparatus having a displaying portion, a display controlling unit, and a print controlling unit. | 01-29-2009 |
20090046326 | Image processing device, method of controlling the same, and program - An image processing device includes a display unit, an image reading unit that reads a photo image, an extracting unit that extracts a characteristic amount of a face region of a person included in the photo image,a storing unit that stores the characteristic amount and shaping information that is used for shaping the face region of the person to be associated with each other, and a performing unit that reads out the shaping information from the storing unit, shapes the face region of the person based on the shaping information, and displays the shaped face region of the person in the display unit. | 02-19-2009 |
20120254785 | INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, AND PROGRAM - An event setting section sets calendars or accounts based on operation contents from an operation input receiving unit, and stores a list of the set calendars or accounts in a schedule database. In addition, the event setting section sets events in a calendar based on operation contents from the operation input receiving unit, and stores a list of the set events in the schedule database. An image correlation section stores image data supplied from an image input unit in an image database, and correlates (shares) the image data with the event list stored in the schedule database based on photographing information (photographing time, camera ID, and the like) accompanied by the image data. | 10-04-2012 |
Patent application number | Description | Published |
20090185209 | Divisional print control - The technique of the present invention enhances the workability of bonding and improves the finish in poster printing. The procedure first sets multiple areas adjacent to one another in an image expressed by master image data, where each of the multiple areas corresponds to each unit page to be printed. The procedure then enlarges each of the adjacent areas by preset dimensions (corresponding to an enlarged area in marginless printing) and sequentially extracts image data included in each enlarged area. The procedure subsequently magnifies the extracted image data by a predetermined magnification to generate each piece of page image data. The area actually printed is a little greater than the size of each sheet of printing paper. This arrangement thus enables an image part, for example, each part of a letter ‘A’, to be printed to the top, bottom, left, and right sides of each sheet of printing paper. The image part printed in each sheet of printing paper is continuous with the image part printed in an adjoining sheet of printing paper. | 07-23-2009 |
20120206765 | Print Control Server And Print Control Method - A print control server includes a receiving unit that receives an email on an email address assigned to a specific printer; a determining unit that determines whether the email is a secondary email that is replied to or transferred, on the basis of an email including the email address in a destination, or is a primary email, not the secondary email; a print data creating unit that creates print data on the basis of the primary email; and a print data transmitting unit that transmits the print data to the specific printer. | 08-16-2012 |
20120209977 | Program Update Management Server And Program Update Management Method - A program update management server includes a storage unit configured to store an update program for updating a program to be managed, a setting unit configured to set an update timing in accordance with each client in which the program to be managed is installed, an update recommending unit configured to transmit information regarding recommendation of an update so that the client acquires the update program at the update timing, and a program transmitting unit configured to transmit the update program, at the update timing, to the client that receives the information regarding recommendation of an update. | 08-16-2012 |
Patent application number | Description | Published |
20090189264 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - The present invention enables improvement of bonding reliability of the conductive adhesive interposed between a semiconductor chip and a die pad portion. Provided is a semiconductor device, in which a silicon chip is mounted over the die pad portion integrally formed with a drain lead, has a source pad over the main surface and a drain electrode of a power MOSFET over the back side, and is bonded onto the die pad portion via an Ag paste. In the device, a source lead and the source pad are electrically coupled via an Al ribbon. Over the back surface of the silicon chip, an Ag nanoparticle coated film is formed, while another Ag nanoparticle coated film is formed over the die pad portion and lead (drain lead and source lead). | 07-30-2009 |
20110237031 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - The present invention enables improvement of bonding reliability of the conductive adhesive interposed between a semiconductor chip and a die pad portion. Provided is a semiconductor device, in which a silicon chip is mounted over the die pad portion integrally formed with a drain lead, has a source pad over the main surface and a drain electrode of a power MOSFET over the back side, and is bonded onto the die pad portion via an Ag paste. In the device, a source lead and the source pad are electrically coupled via an Al ribbon. Over the back surface of the silicon chip, an Ag nanoparticle coated film is formed, while another Ag nanoparticle coated film is formed over the die pad portion and lead (drain lead and source lead). | 09-29-2011 |
Patent application number | Description | Published |
20080220568 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A semiconductor device in the form of a resin sealed semiconductor package is disclosed, wherein a gate terminal connected to a gate pad electrode formed on a surface of a semiconductor chip and a source terminal connected to a source pad electrode formed on the chip surface exposed to a back surface of a sealing resin portion, a first portion of a drain terminal connected to a back-surface drain electrode of the semiconductor chip is exposed to an upper surface of the sealing resin portion, and a second portion of the drain terminal formed integrally with the first portion of the drain terminal is exposed to the back surface of the sealing resin portion. When forming the sealing resin portion in such a semiconductor device, first the sealing resin portion is formed so as to also cover an upper surface of the first portion of the drain terminal and thereafter the upper surface side of the sealing resin portion is polished by liquid honing, thereby allowing the upper surface of the first portion of the drain terminal to be exposed on the upper surface of the sealing resin portion. Both heat dissipating property and production yield of the semiconductor device are improved. | 09-11-2008 |
20080268577 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor chip is sealed by resin without covering an outer terminal of a semiconductor device having a power transistor. A semiconductor chip having a power transistor is housed within a recess of a metal cap while a drain electrode on a first surface of the semiconductor chip is bonded to a bottom of the recess via a connection material. A gate electrode and a source electrode are formed on a second surface opposite to the first surface of the semiconductor chip, and the gate electrode and the source electrode are bonded with metal plate terminals | 10-30-2008 |
20090096100 | SEMICONDUCTOR APPARATUS, MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS, AND JOINT MATERIAL - A die bonding portion is metallically bonded by well-conductive Cu metal powders with a maximum particle diameter of about 15 μm to 200 μm and adhesive layers of Ag, and minute holes are evenly dispersed in a joint layer. With this structure, the reflow resistance of about 260° C. and reliability under thermal cycle test can be ensured without using lead. | 04-16-2009 |
20100187678 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a structure of a semiconductor device, a Si chip and a metal leadframe are jointed by metallic bond via a porous joint layer made of high conductive metal, having a three-dimensional network structure and using Ag as a bonding material, and a film containing Zn oxide or Al oxide is formed on a surface of a semiconductor assembly contacting to a polymer resin. In this manner, by the joint with the joint layer having the porous structure mainly made of Ag, thermal stress load of the Si chip can be reduced, and fatigue life of the joint layer itself can be improved. Besides, since adhesion of the polymer resin to the film can be enhanced by the anchor effect, occurrence of cracks in a bonding portion can be prevented, so that a highly-reliable Pb-free semiconductor device can be provided. | 07-29-2010 |
20130071971 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a structure of a semiconductor device, a Si chip and a metal leadframe are jointed by metallic bond via a porous joint layer made of high conductive metal, having a three-dimensional network structure and using Ag as a bonding material, and a film containing Zn oxide or Al oxide is formed on a surface of a semiconductor assembly contacting to a polymer resin. In this manner, by the joint with the joint layer having the porous structure mainly made of Ag, thermal stress load of the Si chip can be reduced, and fatigue life of the joint layer itself can be improved. Besides, since adhesion of the polymer resin to the film can be enhanced by the anchor effect, occurrence of cracks in a bonding portion can be prevented, so that a highly-reliable Pb-free semiconductor device can be provided. | 03-21-2013 |