Patent application number | Description | Published |
20110227948 | MAP DISPLAY APPARATUS, METHOD, AND PROGRAM - Map display apparatus, methods, and programs store a first map image drawn based on map information stored in a map information storage unit and cause a partial range of the first map image to be displayed on a display unit. The apparatus, methods, and programs detect a pressed coordinate position where the display unit is pressed. When the pressing of the display screen is detected, the apparatus, methods, and programs cause a second map image drawn based on map information of an area vertically and horizontally twice as large as the display screen to be stored in a map image storage unit. The area has a center at a map position corresponding to the detected coordinate position. The apparatus, methods, and programs perform. follow-scrolling to move a display range of the second map image based on movement of the detected coordinate position. | 09-22-2011 |
20120068945 | TOUCH PANEL TYPE OPERATION DEVICE, TOUCH PANEL OPERATION METHOD, AND COMPUTER PROGRAM - Touch panel operation devices, methods, and programs set a touch-off determination time, and determine that the touch-off has occurred if the state at which the touch panel detects the user not touching the touch panel has continued for the set touch-off determination time or more after the touch-off was detected. When the user is touching the touch panel, the devices, methods, and programs acquire a touch coordinate, select an object corresponding to the acquired touch coordinate, and scroll-display the selected object based on a displacement of the acquired touch coordinate. The devices, methods, and programs determine whether the touch coordinate was acquired and displaced just before the touch-off was detected, and if the touch coordinate was acquired and displaced just before the touch-off was detected, set the touch-off determination time to be longer than if the touch coordinate was acquired and not displaced just before the touch-off was detected. | 03-22-2012 |
20150285648 | ROUTE GUIDANCE DEVICE, ROUTE GUIDANCE METHOD, AND ROUTE GUIDANCE PROGRAM - A route guidance device configured so as to be freely attachable and detachable with respect to an in-vehicle device includes a route acquiring part that acquires a vehicle route calculated based on vehicle map data and acquires a pedestrian route calculated based on the pedestrian map data; and a display that outputs the vehicle route and the pedestrian route acquired by the route acquiring part. The route acquiring part, when the route guidance device has been detached from the in-vehicle device, acquires a pedestrian route calculated based on a destination having been set to acquire the vehicle route before detachment, or when the route guidance device has been attached to the in-vehicle device, acquires a vehicle route calculated based on a destination having been set to acquire the pedestrian route before attachment. | 10-08-2015 |
Patent application number | Description | Published |
20080257288 | VALVE TIMING CONTROL SYSTEM - A first-side check valve prevents a hydraulic fluid from being discharged out of a retard chamber, and a second-side check valve prevents the hydraulic fluid from being discharged out of an advance chamber. A first-side control valve opens or closes a first-side discharge passage by a pilot pressure received through a retard pilot passage. A second-side control valve opens or closes a second-side discharge passage by the pilot pressure received through an advance pilot passage. Another check valve is disposed in a supply passage between a phase switch valve and a branch point, at which a supply passage is branched. | 10-23-2008 |
20090145386 | VALVE TIMING ADJUSTING APPARATUS - A valve timing adjusting apparatus for an internal combustion engine having a bearing includes a camshaft, a housing, a vane rotor, a control valve, and a fastening member. The fastening member is mounted on an axial end portion of the camshaft on a side of the vane rotor opposite from the bearing. The vane rotor is coaxially fastened to the camshaft between the fastening member and a step portion, which is provided to the camshaft on a side of the bearing. A sleeve of the control valve is coaxially received in an axial hole of the camshaft, which opens at an end surface of the end portion of the camshaft. Each of the advance output port and the retard output port is communicated with a corresponding one of the advance chamber and the retard chamber through the camshaft. | 06-11-2009 |
20100251980 | Valve timing controller - A first one-way valve is provided in a first advance passage connecting a hydraulic pump to a control advance chamber. A second one-way valve is provided in a first retard passage connecting the hydraulic pump to a control retard chamber. A first control valve is provided in a second advance passage to bypass the first one-way valve for communication of the first advance passage. A second control valve is provided in a second retard passage to bypass the second one-way valve for communication of the first retard passage. The first control valve operates by the pilot pressure to close the second advance passage at advance controlling and opening it at retard controlling. The second control valve operates by the pilot pressure to close the second retard passage at retard controlling and open it at advance controlling. | 10-07-2010 |
20100258069 | VALVE TIMING CONTROL APPARATUS - An assist spring is fixed at its one end to a vane rotor and at its other end to a spring hook provided at an outside of a housing | 10-14-2010 |
Patent application number | Description | Published |
20090086938 | TELEPHONE DEVICE - A telephone device is capable of receiving, during communication with a first external device, a call from a second external device. The telephone device includes a setting unit and a ring alert inhibiting unit. The setting unit is configured so as to be capable of setting the telephone device to either one of a first status, in which a user of the telephone device wants to perform communication, and a second status, in which the user does not want to perform communication, the setting unit being configured so as to be capable of setting the second status, either when communication is started with the first external device, or while the communication with the first external device is being executed. The ring alert inhibiting unit inhibits a sound of a ring alert for informing that a call has been received from the second external device when the telephone device is in the second status. | 04-02-2009 |
20090161167 | FACSIMILE APPARATUS - A facsimile apparatus includes a document size detecting unit, a first image data generating unit, a size acquiring unit, a size comparing unit, a second image data generating unit, an image data transmitting unit, and a first transmission result outputting unit. The document size detecting unit detects a first size of a first document. The first image data generating unit generates first image data based on a first image on the first document. The size acquiring unit acquires a second size of a second document that can be received by a reception-side apparatus. The size comparing unit compares the first size with the second size. The second image data generating unit generates second image data for forming a second image on the second document from the first image data based on a comparing result of the size comparing unit. The image data transmitting unit transmits the second image data to the reception-side apparatus. The first transmission result outputting unit outputs exclusively a transmission result indicating a result of transmission of the second image data to the reception-side apparatus. | 06-25-2009 |
Patent application number | Description | Published |
20150059305 | HONEYCOMB FILTER AND METHOD FOR PRODUCING HONEYCOMB FILTER - An object of the present invention is to provide a honeycomb filter capable of achieving a combination of high collection efficiency and low pressure loss. The honeycomb filter comprises a ceramic honeycomb substrate in which a multitude of cells through which a fluid flows are disposed in parallel in a longitudinal direction and are separated by cell walls, each cell being sealed at an end section at either the fluid inlet side or the fluid outlet side, and a filter layer which, among the surfaces of the cell walls, is formed on the surface of the cell walls of those cells in which the end section at the fluid inlet side is open and the end section at the fluid outlet side is sealed by a sealing material, wherein the thickness of the filter layer increases gradually from the fluid inlet side toward the fluid outlet side. | 03-05-2015 |
20150121825 | HONEYCOMB FILTER - An object of the present invention is to provide a honeycomb filter which is resistant to detachment of the filter layer during regeneration processing, while suppressing any sudden increase in pressure loss caused by depth filtration. The honeycomb filter of the present invention comprises a ceramic honeycomb substrate in which a multitude of cells through which a fluid flows are disposed in parallel in a longitudinal direction and are separated by cell walls, each cell being sealed at an end section at either the fluid inlet side or the fluid outlet side, and a filter layer which, among the surfaces of the cell walls, is formed on the surface of the cell walls of those cells in which the end section at the fluid inlet side is open and the end section at the fluid outlet side is sealed, wherein the filter layer comprises hollow particles. | 05-07-2015 |
20150121826 | HONEYCOMB FILTER - An object of the present invention is to provide a honeycomb filter having low pressure loss and high collection efficiency. The honeycomb filter of the present invention comprises a ceramic honeycomb substrate in which a multitude of cells through which a fluid flows are disposed in parallel in a longitudinal direction and are separated by cell walls, each cell being sealed at an end section at either the fluid inlet side or the fluid outlet side, and a filter layer which, among the surfaces of the cell walls, is formed on the surface of the cell walls of those cells in which the end section at the fluid inlet side is open and the end section at the fluid outlet side is sealed by a sealing material, wherein the filter layer comprises spherical ceramic particles, and the average particle size of the spherical ceramic particles increases gradually from the fluid inlet side toward the fluid outlet side. | 05-07-2015 |
Patent application number | Description | Published |
20120102509 | MULTILAYER OPTICAL RECORDING MEDIUM - The multilayer optical recording medium with six or more recording and reading layers disposed one above the other has at least two or more recording and reading layer groups. The recording and reading layer groups each include a plurality of recording and reading layers successively disposed one above the other. The reflectance of each of the recording and reading layers in a stacked state decreases in the order from a front side near a light incident surface toward a back side far from the light incident surface. A recording and reading layer nearest the front side among the recording and reading layers in the recording and reading layer group nearer the back side has a reflectance in a stacked state higher than that of a recording and reading layer nearest the back side among the recording and reading layers in the recording and reading layer group nearer the front side. | 04-26-2012 |
20120102510 | MULTILAYER OPTICAL RECORDING MEDIUM - Simple design of a multilayer optical recording medium is achieved while suppressing interlayer crosstalk and confocal crosstalk in the multilayer optical recording medium. Simple recording and reading control by a recording and reading unit is also achieved. The multilayer optical recording medium includes at least three or more recording and reading layers deposited one above the other with intermediate layers interposed therebetween, and information can be read by light irradiation from the layers. The intermediate layers have film thicknesses of two types or less, and all the recording and reading layers except the recording and reading layer farthest from a light incident surface have substantially the same optical constant. | 04-26-2012 |
20120102511 | MULTILAYER OPTICAL RECORDING MEDIUM - The multilayer optical recording medium with at least four or more recording and reading layers disposed one above the other has at least two or more recording and reading layer groups each including the recording and reading layers successively disposed one above the other. In adjacent recording and reading layer groups with an intermediate layer interposed therebetween, a recording and reading layer nearest a front side in the recording and reading layer group nearer a back side is higher than the higher value of the reflectances in a stacked state of two recording and reading layers nearest the back side in the recording and reading layer group nearer the front side. | 04-26-2012 |
20120201110 | OPTICAL RECORDING AND READING METHOD, OPTICAL RECORDING AND READING APPARATUS, OPTICAL RECORDING MEDIUM, AND METHOD FOR PRODUCING AN OPTICAL RECORDING MEDIUM - An optical recording medium includes a recording and reading layer that is previously staked or formed afterward and has no concavo-convex pattern for tracking control, and a servo layer in which a concavo-convex pattern or a groove for tracking control is formed. Information can be recorded in the recording and reading layer while tracking is performed using the servo layer. | 08-09-2012 |
20120201118 | MULTILAYER OPTICAL RECORDING MEDIUM - An object of the present invention is to increase the number of stacked layers in a multilayer optical recording medium while simplifying the design of the multilayer optical recording medium. | 08-09-2012 |
20120230174 | OPTICAL RECORDING AND READING DEVICE AND OPTICAL RECORDING AND READING METHOD - In an optical recording medium, even when a plurality of recording and reading layers are stacked, deterioration in the recording and reading signal quality thereof is suppressed. Furthermore, the transfer rate thereof can be increased. When recording or reading information by means of light irradiation on or from an optical recording medium having a plurality of recording and reading layers which are stacked in advance or formed eventually, an optical recording and reading device includes: a first optical system for irradiating a first beam to recording and reading layers to be a first target to perform recording or reading of information; and a second optical system for irradiating a second beam to recording and reading layers to be a second target to perform recording or reading of information. | 09-13-2012 |
20140169147 | OPTICAL RECORDING AND READING METHOD, OPTICAL RECORDING AND READING APPARATUS, OPTICAL RECORDING MEDIUM, AND METHOD FOR PRODUCING AN OPTICAL RECORDING MEDIUM - An optical recording medium includes a recording and reading layer that is previously staked or formed afterword and has no concavo-convex pattern for tracking control, and a servo layer in which a concavo-convex pattern or a groove for tracking control is formed. Information can be recorded in the recording and reading layer while tracking is performed using the servo layer. | 06-19-2014 |
Patent application number | Description | Published |
20100102360 | Method for producing group III nitride semiconductor and template substrate - The present invention provides a method for producing a Group III nitride semiconductor. The method includes forming a groove in a surface of a growth substrate through etching; forming a buffer film on the groove-formed surface of the growth substrate through sputtering; heating, in an atmosphere containing hydrogen and ammonia, the substrate to a temperature at which a Group III nitride semiconductor of interest is grown; and epitaxially growing the Group III nitride semiconductor on side surfaces of the groove at the growth temperature. The thickness of the buffer film or the growth temperature is regulated so that the Group III nitride semiconductor is grown primarily on the side surfaces of the groove in a direction parallel to the main surface of the growth substrate. The thickness of the buffer film is regulated to be smaller than that of a buffer film which is employed for epitaxially growing the Group III nitride semiconductor on a planar growth substrate uniformly in a direction perpendicular to the growth substrate. The growth temperature is regulated to be lower than a temperature at which the Group III nitride semiconductor is epitaxially grown on a planar growth substrate uniformly in a direction perpendicular to the growth substrate. The growth temperature is preferably 1,020 to 1,100° C. The buffer film employed is an AlN film having a thickness of 150 Å or less. | 04-29-2010 |
20110240956 | Group III nitride semiconductor light-emitting device - The present invention provides a Group III nitride semiconductor light-emitting device whose main surface is a plane which provides an internal electric field of zero, and which exhibits improved emission performance. The light-emitting device includes a sapphire substrate which has, in a surface thereof, a plurality of dents which are arranged in a stripe pattern as viewed from above; an n-contact layer formed on the dented surface of the sapphire substrate; a light-emitting layer formed on the n-contact layer; an electron blocking layer formed on the light-emitting layer; a p-contact layer formed on the electron blocking layer; a p-electrode; and an n-electrode. The electron blocking layer has a thickness of 2 to 8 nm and is formed of Mg-doped AlGaN having an Al compositional proportion of 20 to 30%. | 10-06-2011 |
20110244610 | METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present invention provides a method for producing a Group III nitride semiconductor light-emitting device whose main surface is a plane that provides an internal electric field of zero, and which exhibits improved light extraction performance. In the production method, one surface of an a-plane sapphire substrate is subjected to dry etching, to thereby form an embossment pattern having a plurality of mesas which are arranged in a honeycomb-dot pattern as viewed from above; and an n-type layer, a light-emitting layer, and a p-type layer, each of which is formed of a Group III nitride semiconductor layer having an m-plane main surface, are sequentially stacked on the surface of the sapphire substrate on which the mesas are formed. Subsequently, a p-electrode is formed on the p-type layer, and the p-electrode is bonded to a support substrate via a metal layer. Next, the sapphire substrate is removed through the laser lift-off process. On the thus-exposed surface of the n-type layer is formed an embossment pattern having dents provided through transfer of the mesas of the embossment pattern of the sapphire substrate. Then, the emboss-patterned surface of the n-type layer is subjected to wet etching, to thereby form numerous etched pits. | 10-06-2011 |
20120322189 | METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved light extraction performance. In the production method, a p cladding layer of p-AlGaN is formed by the MOCVD method on a light-emitting layer at a pressure of 30 kPa and with an Mg concentration of 1.5×10 | 12-20-2012 |
20130017639 | METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICEAANM BOYAMA; ShinyaAACI Kiyosu-shiAACO JPAAGP BOYAMA; Shinya Kiyosu-shi JPAANM Ushida; YasuhisaAACI Kiyosu-shiAACO JPAAGP Ushida; Yasuhisa Kiyosu-shi JP - The present invention is a method for producing a light- emitting device whose p contact layer has a p-type conduction and a reduced contact resistance with an electrode. On a p cladding layer, by MOCVD, a first p contact layer of GaN doped with Mg is formed. Subsequently, after lowering the temperature to a growth temperature of a second p contact layer being formed in the subsequent process, which is 700° C., the supply of ammonia is stopped and the carrier gas is switched from hydrogen to nitrogen. Thereby, Mg is activated in the first p contact layer, and the first p contact layer has a p-type conduction. Next, the second p contact layer of InGaN doped with Mg is formed on the first p contact layer by MOCVD using nitrogen as a carrier gas while maintaining the temperature at 700° C. which is the temperature of the previous process. | 01-17-2013 |
20130256687 | GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR PRODUCING THE SAME - A group III nitride compound semiconductor light emitting device that inhibits occurrence of dislocation in a strain relaxation layer in forming a group III nitride compound semiconductor layer on a thin GaN substrate, and a method for producing the same are provided. A light emitting device | 10-03-2013 |
20130328097 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A group III nitride semiconductor light-emitting element having a rectangular shape in a planar view, the element comprises an n-electrode connecting to an n-type layer and a p-electrode connecting to a p-type layer, on a same plane side; wherein the n-electrode has a n-wiring-shaped part that is wiring-shaped and extending along a first side of the rectangular shape; the p-electrode has a p-wiring-shaped part that is wiring-shaped and extending along the first side of the rectangular shape; when a distance that is between the n-wiring-shaped part and the p-wiring-shaped part is a, and a distance that is between the one side of the rectangular shape and at least one of the n-wiring-shaped part and the p-wiring-shaped part and that is nearest to the first side is b, the n-wiring-shaped part and the p-wiring-shaped part are arranged such that the distances a and b satisfy 1.65≦a/b≦7.00. | 12-12-2013 |
20140167222 | METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR AND TEMPLATE SUBSTRATE - A semiconductor substrate includes a sapphire substrate including an a-plane main surface and a groove in a surface thereof, the groove includes side surfaces and a bottom surface, and a Group III nitride semiconductor layer formed on the sapphire substrate. Both side surfaces of the groove assume a c-plane of sapphire. An axis perpendicular to one of the side surfaces of the groove of the Group III nitride semiconductor layer assumes a c-axis of Group III nitride semiconductor. A plane parallel to the main surface of the sapphire substrate of the Group III nitride semiconductor layer assumes an m-plane of Group III nitride semiconductor. | 06-19-2014 |
Patent application number | Description | Published |
20090039373 | Group III nitride-based compound semiconductor light emitting device - A group III nitride-based compound semiconductor light emitting device includes a polarity inversion layer including a surface with a convex portion, and a transparent electrode formed on the polarity inversion layer. The polarity inversion layer may have a magnesium concentration of not less than 1×10 | 02-12-2009 |
20090065900 | Group III nitride-based compound semiconductor device - A characteristic feature of the invention is to form, in a Group III nitride-based compound semiconductor device, a negative electrode on a surface other than a Ga-polar C-plane. In a Group III nitride-based compound semiconductor light-emitting device, there are formed, on an R-plane sapphire substrate, an n-contact layer, a layer for improving static breakdown voltage, an n-cladding layer made of a multi-layer structure having ten stacked sets of an undoped In | 03-12-2009 |
20100244042 | Group III nitride compound semiconductor light emitting element and manufacturing method thereof - A group III nitride compound semiconductor light emitting element comprising: a first layer which is a single crystal layer of a group III nitride compound semiconductor, the first layer formed on the buffer layer and including a threading dislocation; a second layer of a group III nitride compound semiconductor formed on the first layer, the second layer including a pit and a flat portion, wherein the pit continuing from the threading dislocations and having a cross section parallel to the substrate expanding in a growth direction of the second layer; a luminescent layer including a flat portion and a pit corresponding to those of the second layer. The indium concentration in the pit of the luminescent layer is smaller than that in the flat portion of the luminescent layer. A luminescent spectrum width of thereof is expanded as compared to a case where the pit does not exist. | 09-30-2010 |
20100308437 | METHOD FOR PRODUCING GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR, WAFER INCLUDING GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR, AND GROUP III NITRIDED-BASED COMPOUND SEMICONDUCTOR DEVICE - To produce a Group III nitride-based compound semiconductor having a m-plane main surface and uniformly oriented crystal axes. | 12-09-2010 |