Patent application number | Description | Published |
20100058451 | LOAD BALANCING FOR SERVICES - The present invention extends to methods, systems, and computer program products for load balancing for services. Embodiments of the invention facilitate load balancing between instances of a service based on affinitization of messages, based on content of the message. For example, messages in the same session can be dispatched to the same service instance. A sequence or series of related messages associated with long running and/or stateful services are more likely to be dispatched to the same instance of the service. Thus, if the service instance has persisted client state, there is an increased likely of utilizing the persisted client state and not having another service instance recreate the client state. | 03-04-2010 |
20120102355 | CONSISTENT MESSAGING WITH REPLICATION - A messaging entity configured in a memory of first node of a plurality communicatively coupled nodes is disclosed. The nodes are included in a distributed computing system. The messaging entity is configured to operate as a secondary messaging entity in a messaging server for the plurality communicatively coupled nodes. The messaging entity is communicatively couple to a primary messaging entity configured in a memory of a second node of the plurality of nodes. The primary messaging entity is configured to store a message; store a copy of the message. Also, the messaging entity is configured to be promoted to a new primary messaging entity in the event of failure of the primary messaging entity. | 04-26-2012 |
20130066977 | MESSAGE QUEUE BEHAVIOR OPTIMIZATIONS - Network and storage calls are reduced by batching messages. Messages are collected from a client and sent to the gateway or backend application in one round trip. Alternatively, the messages are collected for different entities, and the batched messages are durably stored. Related messages, which may have the same sessionID, are grouped into a logical unit or session. This session may be locked to a single message consumer. A session may be associated with an application processing state as an atomic unit of work while other operations are performed on the messages in the session. Acknowledgements are accumulated by a broker on a message server, but the messages are not immediately deleted. Instead, multiple messages in a selected range are periodically truncated from a message store in a single operation. Expired messages for active sessions are proactive cleaned up to prevent sessions from reaching a quota or limit. | 03-14-2013 |
20140082085 | CONSISTENT MESSAGING WITH REPLICATION - A messaging entity configured in a memory of first node of a plurality communicatively coupled nodes is disclosed. The nodes are included in a distributed computing system. The messaging entity is configured to operate as a secondary messaging entity in a messaging server for the plurality communicatively coupled nodes. The messaging entity is communicatively couple to a primary messaging entity configured in a memory of a second node of the plurality of nodes. The primary messaging entity is configured to store a message; store a copy of the message. | 03-20-2014 |
20140108523 | CONNECTION SHARING ACROSS ENTITIES IN A DISTRIBUTED MESSAGING SYSTEM - A method of creating a link of a connection to a messaging system includes receiving a protocol command message directed to a message entity of the messaging system. The protocol command message is communicated over the connection. The method includes determining that the protocol command message includes a link identifier that is unrecognized by the messaging system and in response to receiving the protocol command message and determining that the protocol command message includes the link identifier that is unrecognized by the messaging system, creating the link for the connection, the link corresponding to the link identifier. | 04-17-2014 |
Patent application number | Description | Published |
20090117045 | Soy or lentil stabilized gold nanoparticles and method for making same - The invention provides stabilized, biocompatible gold nanoparticles that are stabilized with material from soy or lentil plant material or a reactive extract thereof of the plant material. The gold nanoparticles of the invention can be fabricated with an environmentally friendly method for making biocompatible stabilized gold nanoparticles. In methods of the invention, an aqueous solution containing gold salts is mixed with soy or lentil plant material or a reactive extract thereof. In preferred embodiment methods of making, an aqueous solution containing gold salts is provided. The aqueous solution is mixed with soy or lentil plant material or a reactive extract thereof. The gold salts react to form biocompatible gold nanoparticles that are stabilized with a robust coating derived of the soy or lentil plant material or a reactive extract thereof. | 05-07-2009 |
20100016583 | COMPOUNDS FOR TREATMENT OF COPPER OVERLOAD - The present invention provides compounds, pharmaceutical compositions, and methods that can be used to treat pathologies that are due to copper overload or to the presence of reactive oxygen species. | 01-21-2010 |
20100266508 | STABILIZED GOLD NANOPARTICLE AND CONTRAST AGENT - A kit for providing a contrast enhancer in a mammal for contrasting during imaging of the mammal comprises functionalized gold nanoparticles configured to be directed to one or more of a target organ, tissue and lesion of the mammal. | 10-21-2010 |
20120134918 | GUM ARABIC COATED 198GOLD RADIOACTIVE NANOPARTICLES FOR CANCER THERAPY - The invention provides a cancer therapeutic and imaging agent comprising a solution containing Gum Arabic coated | 05-31-2012 |
20130084248 | STABILIZED, BIOCOMPATIBLE GOLD NANOPARTICLES - The invention provides stabilized, biocompatible gold nanoparticles that are stabilized with material from polyphenols- or flavanoids-rich plant material or reactive phytochemical components of the plant material. The gold nanoparticles of the invention can be fabricated with an environmentally friendly method for making biocompatible stabilized gold nanoparticles. In preferred embodiments, the coating consists of material from polyphenols- or flavanoids-rich plant material or reactive phytochemical components of the plant material. | 04-04-2013 |
20130129618 | EGCG STABILIZED GOLD NANOPARTICLES AND METHOD FOR MAKING SAME - The invention provides stabilized, biocompatible gold nanoparticles that are stabilized with material from epigallocatechin Gallate (EGCg), which is a polyphenols- or flavanoids-rich plant material that can be obtained from green tea. The EGCg is an an antioxidant reducing agent derived from green tea. The gold nanoparticles of the invention can be radioactive or non radioactive and are formed via a simple room temperature fabrication method. In preferred embodiment method of making, an aqueous solution containing gold salts is provided. The aqueous solution is mixed with EGCg in a buffer, such as deionized water. The gold salts react to form biocompatible gold nanoparticles that are stabilized with a coating of EGCg. The thermodynamically feasible redox couple of AuCl4-EGCg leading to the reduction of AuCl4- by EGCg to form gold nanoparticles. In another embodiment, pre-cooled gold salt and EGCg solutions form multi-layered EGCg coated particles. | 05-23-2013 |
20140050664 | SOY, LENTIL OR EXTRACT STABILIZED, BIOCOMPATIBLE GOLD NANOPARTICLES - The invention provides stabilized, biocompatible gold nanoparticles that are stabilized with material from soy or lentil plant material or a reactive extract thereof of the plant material. The gold nanoparticles of the invention can be fabricated with an environmentally friendly method for making biocompatible stabilized gold nanoparticles. The nanoparticles can be introduced in vivo to conduct enhanced imaging. The nanoparticles can also be introduced in vivo to conduct therapy. | 02-20-2014 |
Patent application number | Description | Published |
20090074674 | Stabilized, biocompatible gold nanoparticles and enviro-friendly method for making same - The invention provides stabilized, biocompatible gold nanoparticles that are stabilized with material from polyphenols- or flavanoids-rich plant material or reactive phytochemical components of the plant material. The gold nanoparticles of the invention can be fabricated with an environmentally friendly method for making biocompatible stabilized gold nanoparticles. In methods of the invention, an aqueous solution containing gold salts is mixed with polyphenols- or flavanoids-rich plant material. In preferred embodiment methods of making, an aqueous solution containing gold salts is provided. The aqueous solution is mixed with black tea, turmeric, curcumin or cinnamon or a similar naturally occurring polyphenols- or flavanoids-rich plant material. The gold salts react to form biocompatible gold nanoparticles that are stabilized with a coating of the polyphenols- or flavanoids-rich plant material. The black tea, turmeric, curcumin or cinnamon or similar naturally occurring polyphenols- or flavanoids-rich plant material can be a powder or can be in its root or bark form. | 03-19-2009 |
20090117045 | Soy or lentil stabilized gold nanoparticles and method for making same - The invention provides stabilized, biocompatible gold nanoparticles that are stabilized with material from soy or lentil plant material or a reactive extract thereof of the plant material. The gold nanoparticles of the invention can be fabricated with an environmentally friendly method for making biocompatible stabilized gold nanoparticles. In methods of the invention, an aqueous solution containing gold salts is mixed with soy or lentil plant material or a reactive extract thereof. In preferred embodiment methods of making, an aqueous solution containing gold salts is provided. The aqueous solution is mixed with soy or lentil plant material or a reactive extract thereof. The gold salts react to form biocompatible gold nanoparticles that are stabilized with a robust coating derived of the soy or lentil plant material or a reactive extract thereof. | 05-07-2009 |
20100016583 | COMPOUNDS FOR TREATMENT OF COPPER OVERLOAD - The present invention provides compounds, pharmaceutical compositions, and methods that can be used to treat pathologies that are due to copper overload or to the presence of reactive oxygen species. | 01-21-2010 |
20140050664 | SOY, LENTIL OR EXTRACT STABILIZED, BIOCOMPATIBLE GOLD NANOPARTICLES - The invention provides stabilized, biocompatible gold nanoparticles that are stabilized with material from soy or lentil plant material or a reactive extract thereof of the plant material. The gold nanoparticles of the invention can be fabricated with an environmentally friendly method for making biocompatible stabilized gold nanoparticles. The nanoparticles can be introduced in vivo to conduct enhanced imaging. The nanoparticles can also be introduced in vivo to conduct therapy. | 02-20-2014 |
Patent application number | Description | Published |
20080278994 | MRAM Cell with Multiple Storage Elements - An improved MRAM cell may include a first, second, and third contact, a first MTJ between the first and second contact, and a MTJ between the second and third contact. The MRAM cell is nonconductive between the first and second MTJ. The first MTJ may include a first free layer with a first switching field, and the second MTJ may include a second free layer with a second switching field. If the first switching field is substantially higher than the second switching field, the first MTJ may be a reference element for the second MTJ. If the first switching field is adequately higher than the second switching field, the first and second MTJ may each contain a data bit. If the first switching field is substantially similar to the second switching field, the first and second MTJs may contain identical data bits connected in series. | 11-13-2008 |
20090034321 | Magnetoresistive Element with a Biasing Layer - An improved magnetoresistive element may include a pinned magnetic structure, a free magnetic structure, and a spacer layer coupled between the pinned magnetic structure and the free magnetic structure, where the free magnetic structure includes (i) a synthetic anti-ferromagnetic structure (SAF) including two or more anti-ferromagnetically coupled ferromagnetic layers, and (ii) a first biasing layer coupled to the SAF that impedes a decoupling of the two or more anti-ferromagnetically coupled ferromagnetic layers. The first biasing layer may be an anti-ferromagnetic layer, and may be weakly coupled to the SAF. The free magnetic structure may also include (i) a second biasing layer coupled to the SAF that further impedes a decoupling of the two or more anti-ferromagnetically coupled ferromagnetic layers, and/or (ii) a non-magnetic layer coupled between the first biasing layer and the SAF that controls a coupling strength between the first biasing layer and the SAF. | 02-05-2009 |
20090097303 | MRAM with Resistive Property Adjustment - A magnetic random access memory (MRAM) and a method for reading an MRAM is described. The MRAM may include a magnetoresistive bit, a read architecture coupled to the magnetoresistive bit that forms a read path with the magnetoresistive bit for performing a read operation on the magnetoresistive bit, and a resistive element in the read path that adjusts resistive properties of the magnetoresistive bit during the read operation. Preferably, the resistive element will act in series with the magnetoresistive bit. The resistive element may be a resistive element between the magnetoresistive bit and the read architecture. Alternatively, the resistive element may be a layer of the magnetoresistive bit. Alternatively yet, the resistive element may be an element of the read architecture. | 04-16-2009 |
20110316129 | MULTILAYER STRUCTURES FOR MAGNETIC SHIELDING - A magnetic shield is presented. The shield may be used to protect a microelectronic device from stray magnetic fields. The shield includes at least two layers. A first layer includes a magnetic material that may be used to block DC magnetic fields. A second layer includes a conductive material that may be used to block AC magnetic fields. Depending on the type of material that the first and second layers include, a third layer may be inserted in between the first and second layers. The third layer may include a non-conductive material that may be used to ensure that separate eddy current regions form in the first and second layers. | 12-29-2011 |
20120105101 | MAGNETIC LOGIC GATE - This disclosure is directed to a magnetic logic gate for implementing a combinational logic function. The magnetic logic gate may include a write circuit configured to apply a spin-polarized current to the magnetoresistive device such that a resulting programmed magnetization state of the magnetoresistive device corresponds to a logic input value of a combinational logic function implemented by the magnetic logic device. The magnetic logic gate may further include a read circuit configured to generate a logic output value for the combinational logic function based on the programmed magnetization state in response to the write circuit applying the spin-polarized current to the magnetoresistive device. | 05-03-2012 |
20120105102 | MAGNETIC LOGIC GATE - This disclosure is directed to a magnetic logic device for implementing a combinational logic function. The magnetic logic device may include a chain of at least two magnetoresistive devices electrically coupled in series comprising a first terminal located at a first end of the chain and a second terminal located at a second end of the chain. The magnetic logic device may further include a voltage source configured to apply a voltage between the first terminal and the second terminal of the chain of at least two magnetoresistive devices electrically coupled in series. The magnetic logic device may further include a logic output generator configured to generate a logic output value for a logic function based on a magnitude of a current produced at the second terminal of the chain in response to the applied voltage. | 05-03-2012 |
20120105103 | MAGNETIC LOGIC GATE - This disclosure is directed to a magnetic logic device for implementing a combinational logic function. The magnetic logic device may include a network of at least two magnetoresistive devices electrically coupled in parallel. The magnetic logic device may further include a voltage source configured to apply a voltage between a first terminal and a second terminal of the network of at least two magnetoresistive devices electrically coupled in parallel. The magnetic logic device may further include a logic output generator configured to generate a logic output value for a logic function based on a magnitude of a current produced at the second terminal of the network in response to the applied voltages. | 05-03-2012 |
20120106233 | REDUCED SWITCHING-ENERGY MAGNETIC ELEMENTS - A system includes a continuous thin-film ferromagnetic layer, N magnetic tunnel junction (MTJ) devices, and N write structures. The continuous thin-film ferromagnetic layer includes N modified regions. Each of the N modified regions is configured to stabilize a magnetic domain wall located in the continuous thin-film ferromagnetic layer. Each of the N MTJ devices includes one of N portions of the continuous thin-film ferromagnetic layer. Adjacent MTJ devices of the N MTJ devices are separated by one of the N modified regions. Each of the N write structures is configured to receive current and generate a magnetic field that magnetizes a different one of the N portions of the continuous thin-film ferromagnetic layer. N is an integer greater than 2. | 05-03-2012 |
20120126382 | MAGNETIC SHIELDING FOR MULTI-CHIP MODULE PACKAGING - A system comprises a plurality of stacked integrated circuit dice, each integrated circuit die comprising at least one circuit, a package enclosing the plurality of dice, and at least two magnetic shields configured to magnetically shield the at least one circuit of each of the plurality of integrate circuit dice. At least one of the magnetic shields is within the package, and at least two of the plurality of stacked integrated circuit dice are positioned between the at least two magnetic shields. | 05-24-2012 |
20120155155 | GENERATING A TEMPERATURE-COMPENSATED WRITE CURRENT FOR A MAGNETIC MEMORY CELL - This disclosure describes write current temperature compensation techniques for use in programming a data storage device that includes one or more memory cells. The techniques may include programming a programmable magnetization state of a magnetoresistive device included within a resistance network based on a signal indicative of the operating temperature of a magnetic memory cell. The techniques may further include generating a write current having a magnitude that is determined at least in part by the programmable magnetization state of the magnetoresistive device. The techniques may further include supplying the write current to the magnetic memory cell for programming a programmable magnetization state of the magnetic memory cell. | 06-21-2012 |
20120242416 | MAGNETIC DEVICE WITH WEAKLY EXCHANGE COUPLED ANTIFERROMAGNETIC LAYER - A magnetic device is provided in one example that comprises a free layer having a magnetic anisotropy. The magnetic anisotropy is at least partially non-uniform. The magnetic device further comprises an antiferromagnetic layer adjacent to and weakly exchange coupled with the free layer, wherein the weak exchange coupling reduces the non-uniformity of the magnetic anisotropy of the free layer. | 09-27-2012 |
20120287708 | SELECTION DEVICE FOR A SPIN-TORQUE TRANSFER MAGNETIC RANDOM ACCESS MEMORY - A spin-torque transfer magnetic random access memory (STT-MRAM) that includes a magnetic bit coupled between a first conductor line and a selection device. The selection device includes at least two transistors. The selection device is operative to (a) select the magnetic bit for a spin-torque transfer (STT) write operation when the at least two transistors are in a first state and (b) select the magnetic bit for a read operation when the at least two transistors are in a second state. The selection device may be implemented in silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology, and the transistors may include body ties. The selection device may also be radiation hardened. | 11-15-2012 |
20120319727 | CONFIGURABLE REFERENCE CIRCUIT FOR LOGIC GATES - This disclosure is directed to techniques for generating a reference current based on a combinational logic function that is to be performed by a magnetic logic device. A comparator circuit may compare an amplitude of a read current that flows through the magnetic logic device and the reference current to generate a logic output value that corresponds to the logic output value when combinational logic function is applied to the input values. By selecting appropriate amplitudes for the reference current the magnetic logic device may be caused to implement different combinational logic functions. | 12-20-2012 |
20130241014 | MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) PACKAGE INCLUDING A MULTILAYER MAGNETIC SECURITY STRUCTURE - A magnetoresistive random access memory (MRAM) package may include an MRAM die, a package defining a cavity and an exterior surface, and a magnetic security structure disposed within the cavity or on the exterior surface of the package. The MRAM die may be disposed in the cavity of the package, and the magnetic security structure may include at least three layers including a permanent magnetic layer and a soft magnetic layer. | 09-19-2013 |
20130242646 | MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) DIE INCLUDING AN INTEGRATED MAGNETIC SECURITY STRUCTURE - An MRAM die may include a first write line, a second write line, an MRAM cell disposed between the first write line and the second write line, and a magnetic security structure adjacent to the MRAM cell. The magnetic security structure may include a permanent magnetic layer and a soft magnetic layer. | 09-19-2013 |
20130250662 | TAMPER-RESISTANT MRAM UTILIZING CHEMICAL ALTERATION - A magnetoresistive random access memory (MRAM) die may include an MRAM cell, a reservoir defined by the MRAM die, and a chemical disposed in the reservoir. At least one boundary of the reservoir may be configured to be damaged in response to attempted tampering with the MRAM die, such that at least some of the chemical is released from the reservoir when the at least one boundary of the reservoir is damaged. In some examples, at least some of the chemical is configured to contact and alter or damage at least a portion of the MRAM cell when the chemical is released from the reservoir. | 09-26-2013 |
20130250663 | ANTI-TAMPERING DEVICES AND TECHNIQUES FOR MAGNETORESISTIVE RANDOM ACCESS MEMORY - A system may include circuitry and a magnetoresistive random access memory (MRAM) die including at least one MRAM cell. The circuitry may be configured to detect attempted tampering with the MRAM die and generate a signal based on the detected attempted tampering. The signal may be sufficient to damage or destroy at least one layer of the at least one MRAM cell or a fuse electrically connected to a read line of the at least one MRAM cell. | 09-26-2013 |
20140029334 | MAGNETIC FIELD SENSING USING MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) CELLS - A magnetic field sensing system includes one or more magnetoresistive random access memory (MRAM) cells, and may be configured to determine one or more of a presence, a magnitude, and a polarity of an external magnetic field incident upon an MRAM cell. In some examples, a control module of the system controls a write current source, or another device, to provide a write current through a write line associated with the MRAM cell to induce a magnetic field proximate to the MRAM cell. The magnetic field may be less than a magnetic switching threshold of the MRAM cell. After initiating the provision of the write current through the write line, the control module may determine a magnetic state of the MRAM cell, and determine a presence of an external magnetic field incident upon the MRAM cell based at least in part on the magnetic state of the MRAM cell. | 01-30-2014 |
20150016184 | MAGNETIC FIELD SENSING USING MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) CELLS - A magnetic field sensing system includes one or more magnetoresistive random access memory (MRAM) cells, and may be configured to determine one or more of a presence, a magnitude, and a polarity of an external magnetic field incident upon an MRAM cell. In some examples, a control module of the system controls a write current source. Of another device, to provide a write current through a write line associated with the MRAM cell to induce a magnetic field proximate to the MRAM cell. The magnetic field may be less than a magnetic switching threshold of the MRAM cell. After initiating the provision of the write current through the write line, the control module may determine a magnetic state of the MRAM cell, and determine a presence of an external magnetic field incident upon the MRAM cell based at least in part on the magnetic state of the MRAM cell. | 01-15-2015 |
Patent application number | Description | Published |
20120201153 | ADAPTIVE TECHNIQUES FOR FULL DUPLEX COMMUNICATIONS - In one aspect there is provided a method. The method may include receiving a first analog radio frequency signal including a signal of interest and an interference signal caused by a second analog radio frequency signal transmitted in full duplex over a channel from which the first analog transmission is received; adjusting at least one of the first analog radio frequency signal and a portion of the second analog radio frequency signal to enable at least one of a reduction or an elimination of the interference signal in an output analog radio frequency signal; combining the first analog radio frequency signal and the portion of the second analog radio frequency signal to generate the output analog radio frequency signal characterized by at least the reduction or the elimination of the interference signal included in the output analog radio frequency signal; and providing the output analog radio frequency signal. Related apparatus, systems, methods, and articles are also described. | 08-09-2012 |
20120201173 | SINGLE CHANNEL FULL DUPLEX WIRELESS COMMUNICATIONS - In one aspect there is provided a method. The method may include receiving a first analog radio frequency signal including a signal of interest and an interference signal caused by a second analog radio frequency signal transmitted in full duplex over a channel from which the first analog transmission is received; combining the first analog radio frequency signal and a portion of the second analog radio frequency signal to generate an output analog radio frequency signal characterized by at least a reduction or an elimination of the interference signal included in the output analog radio frequency signal; and providing the output analog radio frequency signal. Related apparatus, systems, methods, and articles are also described. | 08-09-2012 |
20130215805 | Systems and Methods for Full-Duplex Signal Shaping - The current subject matter relates to a system and a method for processing signals. The system can include a transmitting antenna for transmitting a signal over a plurality of wireless spectrum fragments, a receiving antenna for receiving a signal from the plurality of wireless spectrum fragments, and a signal processing layer in communication with the transmitting and receiving antennas for simultaneously causing reception of the received signal and transmission of the transmitted signal. The signal processing layer can include an interference cancellation component for removing a first portion of interference from the received signal and a filtering component for removing a second portion of the interference from the received signal. | 08-22-2013 |
20130301488 | SYSTEMS AND METHODS FOR CANCELLING INTERFERENCE USING MULTIPLE ATTENUATION DELAYS - A wireless communication device includes, in part, at least one antenna for receiving or transmitting a signal, and a cancelation circuit adapted to cancel or reduce the self-interference signal. The cancelation circuit includes, in part, a control block, N delay and attenuation paths, a combiner, and a subtractor. Each path includes a delay element and a variable attenuator whose attenuation level varies in response to a control signal generated by the control block. Each path receives a sample of the transmit signal and generates a delayed and attenuated (weighted) version of the sample signal. The combiner combines the N delayed and weighted versions of the sample signal to construct a signal representative of the self-interference signal. The subtractor subtracts the constructed signal from the received signal thereby the cancel or reduce the self-interference signal therefrom. | 11-14-2013 |
20140169236 | FEED FORWARD SIGNAL CANCELLATION - A circuit that cancels a self-interference signal includes, in part, a pair of signal paths that are substantially in phase, each of which paths includes a passive coupler, a delay element and a variable attenuator. The circuit further includes, in part, a first group of P signal paths each of which is substantially in phase with the pair of paths, and a second group of M signal paths each of which is substantially out-of-phase relative to the pair of signal paths. Each of the P and M signal paths includes a delay element and a variable attenuator. Furthermore, (P−1) signal paths of the first group of P signal paths, and (M−1) signal paths of the second group of M signal paths include a passive coupler. Optionally, each of the M signal paths is optionally 180° out-of-phase relative to the pair of signal paths. | 06-19-2014 |
20140219139 | SIGNAL CANCELLATION USING FEEDFORWARD AND FEEDBACK PATHS - A circuit that cancels a self-interference signal includes, in part, a pair of signal paths that are substantially in phase, each of which paths includes a passive coupler, a delay element and a variable attenuator. The circuit further includes, in part, a first group of P signal paths each of which is substantially in phase with the pair of paths, a second group of M signal paths each of which is substantially out-of-phase relative to the pair of signal paths, and at least a pair of feedback paths. Each of the P and M signal paths, as well as the feedback paths includes a delay element and a variable attenuator. Optionally, each of the M signal paths is optionally 180° out-of-phase relative to the pair of signal paths. | 08-07-2014 |
20140348018 | SELF-INTERFERENCE CANCELLATION - A wireless communication device includes, in part, an analog interference cancellation circuit and a controller. The analog cancellation circuit includes a multitude of delay paths each including a delay element and a variable attenuator. The controller dynamically varies the attenuation level of each of the variable attenuators in accordance with the frequency response characteristic of that attenuator to remove a portion of a self-interference signal present in a signal received by the device. The device measures the frequency response characteristic of the communication channel, used in determining the attenuation levels, via one or more preamble symbols. A second portion of the self-interference signal is removed by the device using a multitude of samples of a transmitted signal and a multitude of samples of a signal to be transmitted. | 11-27-2014 |