Patent application number | Description | Published |
20090111089 | PRIMERS AND PROBES FOR DETECTION AND DISCRIMINATION OF TYPES AND SUBTYPES OF INFLUENZA VIRUSES - Methods of detecting influenza, including differentiating between type and subtype are disclosed, for example to detect, type, and/or subtype an influenza infection. A sample suspected of containing a nucleic acid of an influenza virus, is screened for the presence or absence of that nucleic acid. The presence of the influenza virus nucleic acid indicates the presence of influenza virus. Determining whether the influenza virus nucleic acid is present in the sample can be accomplished by detecting hybridization between an influenza specific probe, influenza type specific probe, and/or subtype specific probe and an influenza nucleic acid. Probes and primers for the detection, typing and/or subtyping of influenza virus are also disclosed. Kits and arrays that contain the disclosed probes and/or primers also are disclosed. | 04-30-2009 |
20120283135 | PRIMERS AND PROBES FOR DETECTION AND DISCRIMINATION OF TYPES AND SUBTYPES OF INFLUENZA VIRUSES - Methods of detecting influenza, including differentiating between type and subtype are disclosed, for example to detect, type, and/or subtype an influenza infection. A sample suspected of containing a nucleic acid of an influenza virus, is screened for the presence or absence of that nucleic acid. The presence of the influenza virus nucleic acid indicates the presence of influenza virus. Determining whether the influenza virus nucleic acid is present in the sample can be accomplished by detecting hybridization between an influenza specific probe, influenza type specific probe, and/or subtype specific probe and an influenza nucleic acid. Probes and primers for the detection, typing and/or subtyping of influenza virus are also disclosed. Kits and arrays that contain the disclosed probes and/or primers also are disclosed. | 11-08-2012 |
Patent application number | Description | Published |
20090116524 | Single-exciton nanocrystal laser - A laser system employing amplification via a single exciton regime and to optical gain media having single exciton amplification is provided. | 05-07-2009 |
20090253224 | Nanocrystal structures - A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm. | 10-08-2009 |
20100013376 | Mixed semiconductor nanocrystal compositions - Composition comprising one or more energy donors and one or more energy acceptors, wherein energy is transferred from the energy donor to the energy acceptor and wherein: the energy acceptor is a colloidal nanocrystal having a lower band gap energy than the energy donor; the energy donor and the energy acceptor are separated by a distance of 40 nm or less; wherein the average peak absorption energy of the acceptor is at least 20 meV greater than the average peak emission energy of the energy donor; and wherein the ratio of the number of energy donors to the number of energy acceptors is from about 2:1 to about 1000:1. | 01-21-2010 |
20100236614 | HYBRID PHOTOVOLTAICS BASED ON SEMICONDUCTOR NANOCRYSTALS AND AMORPHOUS SILICON - Semiconductor nanocrystals (NCs) are promising materials for applications in photovoltaic (PV) structures that could benefit from size-controlled tunability of absorption spectra, the ease of realization of various tandem architectures, and perhaps, increased conversion efficiency in the ultraviolet through carrier multiplication. The first practical step toward utilization of the unique properties of NCs in PV technologies could be through their integration into traditional silicon-based solar cells. Here, we demonstrate an example of such hybrid PV structures that combine colloidal NCs with amorphous silicon. In these structures, NCs and silicon are electronically coupled, and the regime of this coupling can be tuned by altering the alignment of NC states with regard to silicon band edges. For example, using wide-gap CdSe NCs we demonstrate a photoresponse which is exclusively due to the NCs. On the other hand, in devices comprising narrow-gap PbS NCs, both the NCs and silicon contribute to photocurrent, which results in PV response extending from the visible to the near-infrared. This work demonstrates the feasibility of hybrid PV devices that combine advantages of mature silicon fabrication technologies with the unique electronic properties of semiconductor NCs. | 09-23-2010 |
20140275544 | QUANTUM DOT-METAL OXIDE LINKERS - Embodiments of linkers for binding semiconductor quantum dots (QDs) to metal oxides are disclosed. The linkers have a general formula F1-A-(F2) | 09-18-2014 |