Patent application number | Description | Published |
20090116361 | Recording Method, Recording and Reproducing Method, Reproducing Method, Recording Device, Recording and Reproducing Device, and Reproducing Device for Optical Information Recording and Reproducing Medium, and the Optical Information Recording and Reproducing Medium - Optical information recording and reproducing medium | 05-07-2009 |
20090252009 | POSITIONING CONTROL UNIT AND OPTICAL DISK DRIVE - A position-error-signal calculation circuit ( | 10-08-2009 |
20100288661 | STACKING TYPE TRAY AND TRAY DEVELOPING MECHANISM AND STACKING TYPE TRAY DEVELOPING SYSTEM - To develop optical discs stored while being stacked and to load them to a plurality of recording/reproducing devices simultaneously. Trays for mounting optical discs are stacked to configure an optical disc transportation body, and the portions being exposed without overlapping when the stacked trays are viewed from the stacking direction are utilized as tray operation portions for handling. Supporting portions abutting against the tray operation portions inherent to respective trays in one to one correspondence are fixed with an interval in the vertical direction to the frames configuring a tray distributing/holding portion. The tray operation portion of each tray is held by the supporting portion at each position by moving the optical disc transportation body downward along the frames, and intervals corresponding to the arrangement pitch of recording/reproducing devices are formed between respective trays. | 11-18-2010 |
20110010731 | TRANSPORTATION BODY FOR FLEXIBLE OPTICAL DISK, OPTICAL DISK TRANSPORTATION APPARATUS, AND OPTICAL DISK TRANSPORTATION METHOD - A transportation body | 01-13-2011 |
20120223232 | GAS DETECTION DEVICE - A gas detection device of the present invention includes: a laser light source which emits wavelength-variable laser light to an optical waveguide; a bolometer which obtains a detection signal by detecting output light from the optical waveguide, and has a microbridge structure having a temperature detection unit and a dielectric member arranged above the temperature detection unit; a detection unit which detects a type and amount of gas molecules present on a surface of the optical waveguide based on the detection signal and information of a wavelength of the laser light source; an optical path length change member which changes an optical path length between the temperature detection unit and the dielectric member; and a driving control circuit which performs driving control of the optical path length change member such that the optical path length becomes an integer multiple of a half wavelength of the laser light emitted from the laser light source. | 09-06-2012 |
20130298145 | STACKING TYPE TRAY AND TRAY DEVELOPING MECHANISM AND STACKING TYPE TRAY DEVELOPING SYSTEM - To develop optical discs stored while being stacked and to load them to a plurality of recording/reproducing devices simultaneously. Trays for mounting optical discs are stacked to configure an optical disc transportation body, and the portions being exposed without overlapping when the stacked trays are viewed from the stacking direction are utilized as tray operation portions for handling. Supporting portions abutting against the tray operation portions inherent to respective trays in one to one correspondence are fixed with an interval in the vertical direction to the frames configuring a tray distributing/holding portion. The tray operation portion of each tray is held by the supporting portion at each position by moving the optical disc transportation body downward along the frames, and intervals corresponding to the arrangement pitch of recording/reproducing devices are formed between respective trays. | 11-07-2013 |
20130307401 | LIGHT-EMITTING DEVICE PACKAGE - Provided is a light-emitting device package having a high reflectance and strength. In a light-emitting device package ( | 11-21-2013 |
20140138724 | SUBSTRATE FOR MOUNTING OPTICAL SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING THE SUBSTRATE, AND OPTICAL SEMICONDUCTOR DEVICE - To manufacture a low-temperature co-fired ceramic/high-temperature co-fired ceramic laminated substrate by laminating a porous layer on a dense layer. The porous layer includes a first glass layer, a porous ceramic layer, and a second glass layer laminated on the dense layer in the stated order. The porous ceramic layer contains a glass component and ceramic filler, and has a porosity of 10% or more and 40% or less. A concentration of the glass component at least one of surfaces of the porous ceramic layer in a thickness direction thereof is higher than an average concentration of the glass component in the porous ceramic layer. The dense layer contains a ceramic component, and has a higher transverse rupture strength than the porous ceramic layer. | 05-22-2014 |
Patent application number | Description | Published |
20090078944 | Light emitting device and method of manufacturing the same - This semiconductor light emitting device includes an optical cavity made of a group III nitride semiconductor having a major growth surface defined by a nonpolar plane and including a pair of cavity end faces parallel to c-planes, and a reflecting portion made of a group III nitride semiconductor having a major growth surface defined by a nonpolar plane and having a reflective facet opposed to one of the pair of cavity end faces and inclined with respect to a normal of the major growth surface. The optical cavity and the reflecting portion may be crystal-grown from the major surface of the substrate. The substrate is preferably a group III nitride semiconductor substrate having a major surface defined by a nonpolar plane. | 03-26-2009 |
20090161711 | Nitride semiconductor laser diode - A nitride semiconductor laser diode has a quantum well layer consisting of a mixed crystal of Al | 06-25-2009 |
20090238227 | Semiconductor light emitting device - A semiconductor light emitting device is made of a group III nitride semiconductor having a major growth surface defined by a nonpolar plane or a semipolar plane, and has a quantum well layer containing In in a light emitting layer. A strain compensation layer made of a group III nitride semiconductor containing Al and having a lattice constant smaller than the lattice constant of the quantum well layer in a strain-free state is interposed in the light emitting layer of a quantum well structure having the quantum well layer and a barrier layer or in an adjacent layer adjacent to the light emitting layer. | 09-24-2009 |
20090252191 | Semiconductor laser device - A semiconductor laser device is made of a group III nitride semiconductor having a major growth surface defined by a nonpolar plane or a semipolar plane. The semiconductor laser device includes a cavity having an active layer containing In and distributed Bragg reflectors coating both cavity end faces of the cavity respectively. In each of the distributed Bragg reflectors, a central wavelength λ | 10-08-2009 |
20100195687 | Semiconductor laser device - A semiconductor laser device has a semiconductor laser diode structure made of group III nitride semiconductors having major growth surfaces defined by nonpolar planes or semipolar planes. The semiconductor laser diode structure includes a p-type cladding layer and an n-type cladding layer, a p-type guide layer and an n-type guide layer held between the p-type cladding layer and the n-type cladding layer, and an active layer containing In held between the p-type guide layer and the n-type guide layer. The In compositions in the p-type guide layer and the n-type guide layer are increased as approaching the active layer respectively. Each of the p-type guide layer and the n-type guide layer may have a plurality of In | 08-05-2010 |
20120189029 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device includes a semiconductor laminate structure that includes a light emitting layer that contains In, a p-type guide layer disposed at one side of the light emitting layer, an n-type guide layer disposed at another side of the light emitting layer; a p-type clad layer disposed at an opposite side of the p-type guide layer to the light emitting layer, and an n-type clad layer disposed at an opposite side of the n-type guide layer to the light emitting layer. The semiconductor laminate structure includes a rectilinear waveguide formed parallel to a projection vector of a c-axis onto the crystal growth surface, and a pair of laser resonance surfaces formed of cleavage planes perpendicular to the projection vector. | 07-26-2012 |