Matsumori, JP
Akira Matsumori, Minoh-Shi JP
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20100291587 | BIOMARKER FOR DIAGNOSING HEART DISEASE AND THE USE THEREOF - The invention relates to the following methods [1] to [3] and to a kit for carrying out the methods: | 11-18-2010 |
Akira Matsumori, Osaka JP
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20090068677 | BIOMARKER FOR DIAGNOSING HEART DISEASE AND THE USE THEREOF - The invention relates to the following methods [1] to [3] and to a kit for carrying out the methods: | 03-12-2009 |
20090092593 | THERAPEUTIC DRUG FOR HEART DISEASE AND VIRUS DISEASE - The present invention is related to provide a therapeutic drug for heart diseases and viral diseases. The invention provides a therapeutic drug for heart diseases and viral diseases, comprising a free immunoglobulin light chain or a constitutive polypeptide thereof as an active ingredient. | 04-09-2009 |
20090136515 | Methods of diagnosing, preventing and treating infection with Hepatitis C virus - The present invention provides a method for diagnosing hepatitis C virus (HCV) infection, a preventive agent for and a prevention method for HCV infection, a method for treating HCV infection, and a method for screening anti-HCV drug candidates. The HCV diagnostic method of the present invention comprises the detection of HCV proteins present in leukocytes. The preventive agent for HCV infection comprises an antibody against HCV proteins as an active component. The method for treating HCV infection comprises performing leukopheresis or reduction therapy on an HCV-infected patient. Further, the method for screening anti-HCV drug candidates comprises selecting, from test substances, a substance that is able to inhibit HCV infection in monocytes or is able to reduce the amount of HCV antigens to HCV-infected monocytes. | 05-28-2009 |
Hiroshi Matsumori, Wako-Shi JP
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20140141356 | MEMBRANE ELECTRODE ASSEMBLY - A membrane electrode assembly includes a solid polymer electrolyte membrane sandwiched between a pair of electrodes. Each of the electrodes has an electrode catalyst layer and a gas diffusion layer, the electrode catalyst layer facing the electrolyte membrane. A porous layer having a thickness of 5 to 40 μm and a seepage pressure of 10 to 60 kPa is interposed between the electrode catalyst layer and the gas diffusion layer. The porous layers preferably have a spring constant of 100 to 1000 GPa/m. The membrane electrode assembly may be devoid of any one of the porous layers. | 05-22-2014 |
Hiroshi Matsumori, Utsunomiya-Shi JP
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20140295315 | MEMBRANE ELECTRODE ASSEMBLY - A membrane electrode assembly is prepared by sandwiching an electrolyte membrane between an anode and a cathode. In the anode, a first porous layer is interposed between a first electrode catalyst layer and a first gas diffusion layer. In the cathode, a second porous layer is interposed between a second electrode catalyst layer and a second gas diffusion layer. A first piled body of the first gas diffusion layer and the first porous layer has a percolation pressure higher than that of a second piled body containing the second gas diffusion layer and the second porous layer. The first piled body has a percolation pressure of 25 to 120 kPa, and the second piled body has a percolation pressure of 5 to 25 kPa. | 10-02-2014 |
Hiroyuki Matsumori, Kariya-City JP
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20090295321 | MOTOR DRIVE CIRCUIT - A first semiconductor switching element connects to a high side of a motor and includes a diode whose cathode faces the high side. A second semiconductor switching element having a diode resides on a low side of the first semiconductor switching element. A third semiconductor switching element having a diode resides on a low side of the motor. A fourth semiconductor switching element is connected in parallel to the motor and configures a return current circuit that includes a return current element and causes a return current that arises when the first semiconductor switching element turns off to flow through the return current element. A control portion controls on-off states of the first to the fourth semiconductor switching elements and performs return current circuit failure detection based on a first monitor voltage that is an electric potential of a connecting point between the first semiconductor switching element and the motor. | 12-03-2009 |
Hiroyuki Matsumori, Gunma-Ken JP
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20080199338 | Multistage compression type rotary compressor - An object is to provide a high inner pressure type multistage compression rotary compressor capable of avoiding beforehand generation of vane fly of a second rotary compression element and realizing a stabilized operation, the rotary compressor includes a communication path which connects an intermediate pressure region to a region having a low pressure as a suction pressure of a first rotary compression element; and a valve device which opens or closes this communication path, the rotary compressor applies a high pressure as a back pressure of an upper vane, and this valve device opens the communication path in a case where a pressure difference between the intermediate pressure and the low pressure increases a predetermined upper limit value before the intermediate pressure reaches the high pressure. | 08-21-2008 |
20080286137 | Multistage compression type rotary compressor - An object is to provide a high inner pressure type multistage compression rotary compressor capable of avoiding beforehand generation of vane fly of a second rotary compression element and realizing a stabilized operation, the rotary compressor includes a communication path which connects an intermediate pressure region to a region having a low pressure as a suction pressure of a first rotary compression element; and a valve device which opens or closes this communication path, the rotary compressor applies a high pressure as a back pressure of an upper vane, and this valve device opens the communication path in a case where a pressure difference between the intermediate pressure and the low pressure increases a predetermined upper limit value before the intermediate pressure reaches the high pressure. | 11-20-2008 |
20080292485 | Multistage compression type rotary compressor - An object is to provide a high inner pressure type multistage compression rotary compressor capable of avoiding beforehand generation of vane fly of a second rotary compression element and realizing a stabilized operation, the rotary compressor includes a communication path which connects an intermediate pressure region to a region having a low pressure as a suction pressure of a first rotary compression element; and a valve device which opens or closes this communication path, the rotary compressor applies a high pressure as a back pressure of an upper vane, and this valve device opens the communication path in a case where a pressure difference between the intermediate pressure and the low pressure increases a predetermined upper limit value before the intermediate pressure reaches the high pressure. | 11-27-2008 |
Hisakazu Matsumori, Yokkaichi Mie JP
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20150303212 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a semiconductor substrate, a plurality of NAND strings each of which includes a plurality of memory cells provided on the semiconductor substrate and disposed in a first direction, and a select gate provided adjacent to the memory cell at an end portion of the plurality of memory cells, such that two select gates face each other at the ends of their respective memory cells, and a first spacer layer formed on a side wall between the select gates of the NAND strings disposed adjacent to each other. The first spacer layer includes a recess therein at the portion thereof located adjacent to the semiconductor substrate. | 10-22-2015 |
Hisakazu Matsumori, Yokohama-Shi JP
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20080277788 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE, AND SAID SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device has forming a first metal wire in a groove formed in an insulating film on a semiconductor substrate, forming an interlayer dielectric on the insulating film and the first metal wire, forming a via hole by etching the interlayer dielectric, forming a first barrier metal on sidewalls of the via hole, forming an organic film in the via hole having the first barrier metal formed therein, etching the first barrier metal exposed by performing an etchback on the organic film to a predetermined position, forming a trench integrally with an upper portion of the via hole by etching the interlayer dielectric to a predetermined position, forming a second barrier metal on the first barrier metal and sidewalls of the trench in the via hole, after the organic film remaining in the via hole is removed, and forming a second metal wire in the via hole and the trench having the second barrier metal formed therein. | 11-13-2008 |
Hisakazu Matsumori, Yokkaichi JP
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20140231896 | NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A nonvolatile semiconductor storage device includes a semiconductor substrate; a first insulating film disposed above the semiconductor substrate; a first electrode film disposed above the first insulating film; a second insulating film disposed above the first electrode film; a second electrode film disposed above the second insulating film; a third electrode film filling a first trench and overlying the second electrode film, the first trench having a first width and a first depth and extending through the second electrode film and the second insulating film and into the first electrode film; and a first barrier metal film and a first metal film disposed above the third electrode film; wherein the third electrode film above the second electrode film has a first thickness equal to or less than ½ of the first width of the first trench. | 08-21-2014 |
20150069488 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a memory cell transistor is obtained by forming a first gate insulating film, a first conductive film of a first conductivity type, a first inter-electrode insulating film, and a second conductive film of the first conductivity type, in this order, and a peripheral transistor which is obtained by forming a second gate insulating film, a third conductive film of the second conductivity type opposite to the first conductivity type, the inter-electrode insulating film, a fourth conductive film in which the first conductivity type dopant is doped, a barrier film, and a fifth conductive film in which the second conductivity type dopant is doped, in which in the peripheral transistor, an opening is formed on the barrier film, the fourth conductive film, and the inter-electrode insulating film, and the fifth conductive film is formed so as to come in contact with the third conductive film through the opening. | 03-12-2015 |
Hitoshi Matsumori, Kawasaki JP
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20120047397 | CONTROLLING APPARATUS, METHOD FOR CONTROLLING APPARATUS AND INFORMATION PROCESSING APPARATUS - A controlling apparatus for controlling an information processing apparatus, the controlling apparatus includes a first controller including a first data transfer unit that communicates data between the information processing apparatus, and a first processing unit that generates a command to instruct the first data transfer unit to communicate data between the information processing apparatus, and a second controller including a second data transfer unit that communicates data between the information processing apparatus, and a second processing unit that generates a command to instruct the second data transfer unit to communicate data between the information processing apparatus. | 02-23-2012 |
Masafumi Matsumori, Nishinomiya-Shi JP
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20140373321 | ACCESSORY COUPLING STRUCTURE - A coupling structure includes: a rod-shaped rod attached to a first end of an accessory; and a receiving portion attached to a second end of the accessory and an insertion hole portion, which receives the rod, and an accommodating portion. The receiving portion includes: a cylindrical slider into which at least a tip end portion of the rod is inserted and which is slidable and rotatable in the insertion hole and the accommodating portion; a guide groove configured to restrict the movement of the slider to switch the position of the slider to a first position or a second position; and a locking pin that inhibits the movement of the rod in the receiving portion in a pull-out direction when the slider is located at the first position and that allows the rod to move when the slider is located at the second position. | 12-25-2014 |
Masashi Matsumori, Osaka JP
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20090116166 | APPARATUS AND METHOD FOR GENERATING ATMOSPHERIC-PRESSURE PLASMA - An apparatus for generating atmospheric-pressure plasma includes: a substrate; an antenna arranged on the substrate; a discharge tube arranged in the vicinity of the antenna; a high-frequency power supply for supplying VHF band high-frequency power to the antenna; and a matching circuit for receiving a high frequency from the high-frequency power supply and adjusting a reflection wave. In this apparatus for generating atmospheric-pressure plasma, a phase circuit is connected between the matching circuit and the antenna, and the phase circuit has a circuit constant setting such that a position of a maximum value of a current amplitude of a standing wave or a position of a minimum value of a voltage amplitude of the standing wave is in the vicinity of the antenna. This configuration can efficiently generate plasma and reduce the size of the apparatus. | 05-07-2009 |
20120329182 | SEMICONDUCTOR DEVICE MOUNTING METHOD - When metal junction between a first electrode and a second electrode is executed as ultrasonic bonding between metals including at least copper, the ultrasonic bonding is performed in a state that a contact interface between the first electrode and the second electrode is covered with a bonding auxiliary agent. As a result, formation of oxide at a bonding interface between the first electrode and the second electrode due to execution of the ultrasonic bonding can be suppressed. Therefore, while a desired bonding strength is ensured, ultrasonic bonding with copper used for the first electrode or the second electrode can be fulfilled and cost cuts in mounting of semiconductor devices can be achieved. | 12-27-2012 |
20130233828 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - An atmospheric plasma irradiation unit has a discharge tube for ejecting a primary plasma formed of an inductively coupled plasma of an inert gas and a mixer for generating a secondary plasma formed of a mixed gas plasmanized by collisions of the primary plasma with a mixed gas region of a second inert gas and a reactive gas. The discharge tube and the mixer are included in a plasma head. A moving unit moves the plasma head so that an irradiation area of the secondary plasma to an object is moved on a circular or other-shaped locus. | 09-12-2013 |
Naoki Matsumori, Mie JP
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20090252448 | Roller bearing - A roller bearing having spacers interposed between its rollers is provided, which has a high permissible rotational speed which is achieved by allowing a lubricant to flow smoothly around rolling surfaces so that the stirring resistance of the lubricant due to the spacers is reduced. | 10-08-2009 |
Sumio Matsumori, Himeji-Shi JP
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20110214837 | Electromagnetic stirrer coil - The present invention provides a previously unattainable compact and high thrust electromagnetic stirrer coil, that is, an electromagnetic stirrer coil for stirring molten steel in a mold by electromagnetic force, in which electromagnetic stirrer coil a space factor of the yoke sectional area (-) with respect to an inside area in a vertical cross-section of said electromagnetic stirrer coil is 0.5 to 0.9 and a yoke width B is 100 mm to 300 mm. Preferably, a magnetomotive force F of said electromagnetic stirrer coil divided by the yoke width B, that is, a value of F/B, is 800 kAT/m or more. | 09-08-2011 |
Tadayoshi Matsumori, Nagakute-Shi JP
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20140174706 | THERMAL CONDUCTIVE STRESS RELAXATION STRUCTURE - A thermal conductive stress relaxation structure is interposed between a high-temperature substance and a low-temperature substance to conduct heat in a heat-transfer direction from the high-temperature substance to the low-temperature substance. The structure includes an assembly configured such that a thermal conductive material gathers in a non-bonded state having stress relaxation effect. Such an assembly is a rolled-up body configured such that a carbon-based sheet material and a metal-based sheet material are alternately rolled up, for example. This structure has one or more interfaces at which adjacent parts can slide, thereby dividing a deformable region to relax the thermal stress. It has a low rigidity and can thus deform to release the thermal stress. The structure can suppress the thermal stresses and the shape changes that would be generated in the high-temperature substance and the low-temperature substance, and each physical body located there between. | 06-26-2014 |
Yasuaki Matsumori, Tokyo JP
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20120129692 | THERMOSENSITIVE RECORDING MEDIUM - The present invention present a thermosensitive recording medium having excellent printed image quality on a thermosensitive recording surface, particularly for bar code readability, and also good record density and recording property after storage. | 05-24-2012 |
20120208698 | THERMOSENSITIVE RECORDING LABEL - The conventionally constructed thermosensitive recording labels prepared by installing a thermosensitive recording layer on one side of a support material and a tackifier layer on the other side were found to be clearly limited when meeting the demand for improved water and weather resistance. Therefore, the present invention provides a thermosensitive recording label having much better water and weather resistance than conventionally available one. | 08-16-2012 |