Patent application number | Description | Published |
20080295415 | Motor Vehicle Door - The invention relates to a motor vehicle door ( | 12-04-2008 |
20090145042 | INNER CLADDING OF A MOTOR VEHICLE DOOR COMPRISING A CABLE HARNESS - An inner cladding ( | 06-11-2009 |
20090313903 | VEHICLE DOOR - A vehicle door is proposed having a vehicle bodywork and a door lining, wherein the vehicle door has a sealing region between the vehicle bodywork and the door lining, wherein the door lining is mounted on the vehicle bodywork by means of attachment elements which can be moved in a mounting direction in order to bring about attachment, wherein in the sealing region a sealing profile is provided which is provided in a seal-forming fashion by means of a contact pressure force after the sealing profile has been brought to bear either against the vehicle bodywork or against the door lining, wherein the sealing profile is provided in such a way that the contact pressure force is provided rising monotonously over a contact pressure distance which runs parallel to the mounting direction and with a positive gradient of less than approximately 5 Newton per millimeter contact pressure distance and a length of extension of the sealing profile per centimeter. | 12-24-2009 |
20110092124 | DOOR LINING, ESPECIALLY FOR A MOTOR VEHICLE, AND PRODUCTION METHOD - A separator is provided, such as for dividing an outer wet area from an inner dry area between sheet metal of a vehicle door and the door lining. The separator includes a composite of a separating film and an absorbent nonwoven material. The latter material comprises a base web of plastic fibers. | 04-21-2011 |
20110099910 | VEHICLE DOOR HAVING A SEALING PLANE AND HAVING A SEALING ELEMENT WHOSE ENDS OVERLAP - Proposed is a vehicle door having a sealing plane ( | 05-05-2011 |
20110308172 | DOOR MODULE FOR A VEHICLE DOOR, AND MOUNTING METHOD - A door assembly for a vehicle includes a door frame and a door lock. A force transmitting mechanism has one end connected to the door lock and another end is premounted on a door module housing. The door module housing is mounted to the door frame and a trim panel secured to the door frame. A method includes the steps of premounting the door module to the door frame, securing the door panel to the door frame and connecting an door opening mechanism to the force transmitting mechanism. | 12-22-2011 |
20130057024 | VEHICLE INTERIOR FITTING PART AND METHOD FOR THE PRODUCTION THEREOF - The invention relates to a vehicle interior fitting part, in particular for a motor vehicle, and to a method for producing a vehicle interior fitting part. The vehicle interior fitting part has a first support element and an energy absorption element. The support element is integrally joined to the energy absorption element by means of a connecting region. The support element is provided such that it can be pre-assembled relative to the energy absorption element by means of the connecting region. | 03-07-2013 |
Patent application number | Description | Published |
20090114986 | FIELD PLATE TRENCH TRANSISTOR AND METHOD FOR PRODUCING IT - A field plate trench transistor having a semiconductor body. In one embodiment the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure. The field plate trench transistor has a voltage divider configured such that the field electrode structure is set to a potential lying between source and drain potentials. | 05-07-2009 |
20110095362 | FIELD PLATE TRENCH TRANSISTOR AND METHOD FOR PRODUCING IT - A field plate trench transistor having a semiconductor body. In one embodiment the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure. The field plate trench transistor has a voltage divider configured such that the field electrode structure is set to a potential lying between source and drain potentials. | 04-28-2011 |
20130224921 | LATERAL TRENCH TRANSISTOR, AS WELL AS A METHOD FOR ITS PRODUCTION - A method for production of doped semiconductor regions in a semiconductor body of a lateral trench transistor includes forming a trench in the semiconductor body and introducing dopants into at least one area of the semiconductor body that is adjacent to the trench, by carrying out a process in which dopants enter the at least one area through inner walls of the trench. | 08-29-2013 |
20140027773 | Semiconductor Device Including a Diode and Method of Manufacturing a Semiconductor Device - A semiconductor device includes a transistor cell array in the semiconductor body of a first conductivity type. The semiconductor device further includes a first trench in the transistor cell array between transistor cells. The first trench extends into the semiconductor body from a first side and includes a pn junction diode electrically coupled to the semiconductor body at a sidewall. | 01-30-2014 |
20140048904 | Semiconductor Device, Integrated Circuit and Manufacturing Method Thereof - One embodiment of a semiconductor device includes a semiconductor body with a first side and a second side opposite to the first side. The semiconductor device further includes a first contact trench extending into the semiconductor body at the first side. The first contact trench includes a first conductive material electrically coupled to the semiconductor body adjoining the first contact trench. The semiconductor further includes a second contact trench extending into the semiconductor body at the second side. The second contact trench includes a second conductive material electrically coupled to the semiconductor body adjoining the second contact trench. | 02-20-2014 |
20140332885 | Trench Transistor Having a Doped Semiconductor Region - A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region. | 11-13-2014 |
20150076590 | Semiconductor Device, Integrated Circuit and Method of Manufacturing a Semiconductor Device - A semiconductor device includes a transistor in a semiconductor substrate having a first main surface. The transistor includes a source region, a drain region, a channel region, a drift zone, and a gate electrode adjacent to at least two sides of the channel region. The channel region and the drift zone are disposed along a first direction parallel to the first main surface, between the source region and the drain region. The semiconductor device further includes a conductive layer beneath the gate electrode and insulated from the gate electrode. | 03-19-2015 |
20150076591 | Semiconductor Device and Method of Manufacturing the Same - A semiconductor device includes a semiconductor body having a first surface and a second surface opposite to the first surface. The semiconductor device further includes first and second trenches extending from the first surface into the semiconductor body. The semiconductor device further includes at least one lateral IGFET including a first load terminal at the first surface, a second load terminal at the first surface and a gate electrode within the first trenches. The semiconductor device further includes at least one vertical IGFET including a first load terminal at the first surface, a second load terminal at the second surface and a gate electrode within the second trenches. | 03-19-2015 |
Patent application number | Description | Published |
20100022490 | Zilpaterol Enantiomer Compositions and Methods of Making and Using Such Compositions - This invention is directed generally to zilpaterol enantiomer compositions and, in particular, to compositions comprising the 6R,7R zilpaterol enantiomer. This invention is also directed to processes for making such compositions; methods for using such compositions to, for example, increase the rate of weight gain, improve feed efficiency, and/or increase carcass leanness in livestock, poultry, and/or fish; and uses of such compositions to make medicaments. This invention is further directed to methods for determining the absolute configurations of zilpaterol enantiomers. | 01-28-2010 |
20100173892 | Enantioselective synthesis of 6-amino-7-hydroxy-4,5,6,7-tetrahydro-imidazo[4,5,1-JK][1]-benzazepin-2[1H- ]-one and zilpaterol - This invention relates to a process for the hydrogenation of a ketooxime to selectively form an aminoalcohol stereoisomer, and, in particular, to a process for the hydrogenation of 4,5-dihydro-imidazo[4,5,1-jk][1]benzazepin-2,6,7[1H]-trione-6-oxime or a salt thereof to selectively form a stereoisomer of 6-amino-7-hydroxy-4,5,6, 7-tetrahydro-imidazo[4,5,1-jk][1]-benzazepin-2[1H]-one or a salt thereof. This invention also relates to the use of the 6-amino-7-hydroxy-4,5,6,7-tetrahydro-imidazo[4,5,1-jk][1]-benzazepin-2[1H]-one hydrogenation product or a salt thereof to selectively make a stereoisomer of zilpaterol or a salt thereof, as well as the use of such a zilpaterol stereoisomer or salt in methods of treatment and medicaments for animals. | 07-08-2010 |
20110021506 | ANTHELMINTIC AGENTS AND THEIR USE - This invention is directed to compounds and salts that are generally useful as anthelmintic agents or as intermediates in processes for making anthelmintic agents. This invention also is directed to processes for making the compounds and salts, pharmaceutical compositions and kits comprising the compounds and salts, uses of the compounds and salts to make medicaments, and treatments comprising the administration of the compounds and salts to animals in need of the treatments. | 01-27-2011 |
20110319393 | ANTHELMINTIC AGENTS AND THEIR USE - This invention is directed to compounds and salts that are generally useful as anthelmintic agents or as intermediates in processes for making anthelmintic agents. This invention also is directed to processes for making the compounds and salts, pharmaceutical compositions and kits comprising the compounds and salts, uses of the compounds and salts to make medicaments, and treatments comprising the administration of the compounds and salts to animals in need of the treatments. | 12-29-2011 |
20120094981 | ANTHELMINTIC AGENTS AND THEIR USE - This invention is directed to compounds of the formula (I) and salts therefore that are generally useful as anthelmintic agents or as intermediates in processes for making anthelmintic agents. This invention also is directed to processes for making the compounds of this invention, pharmaceutical compositions and kits comprising the compounds of this invention, uses of the compounds of this invention to make medicaments, and treatments comprising the administration of the compounds of this invention to animals in need of the treatments. | 04-19-2012 |
Patent application number | Description | Published |
20100230764 | INTEGRATED CIRCUIT HAVING FIELD EFFECT TRANSISTORS AND MANUFACTURING METHOD - An integrated circuit having field effect transistors and manufacturing method. One embodiment provides an integrated circuit including a first FET and a second FET. At least one of source, drain, gate of the first FET is electrically connected to the corresponding one of source, drain, gate of the second FET. At least one further of source, drain, gate of the first FET and the corresponding one further of source, drain, gate of the second FET are connected to a circuit element, respectively. A dopant concentration of a body along a channel of each of the first and second FETs has a peak at a peak location within the channel. | 09-16-2010 |
20120098083 | INTEGRATED CIRCUIT TECHNOLOGY WITH DIFFERENT DEVICE EPITAXIAL LAYERS - A semiconductor die includes a substrate, a first device region and a second device region. The first device region includes an epitaxial layer on the substrate and one or more semiconductor devices of a first type formed in the epitaxial layer of the first device region. The second device region is spaced apart from the first device region and includes an epitaxial layer on the substrate and one or more semiconductor devices of a second type formed in the epitaxial layer of the second device region. The epitaxial layer of the first device region is different than the epitaxial layer of the second device region so that the one or more semiconductor devices of the first type are formed in a different epitaxial layer than the one or more semiconductor devices of the second type. | 04-26-2012 |
20130175605 | FIELD PLATE TRENCH TRANSISTOR AND METHOD FOR PRODUCING IT - A field plate trench transistor having a semiconductor body. In one embodiment the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure. The field plate trench transistor has a voltage divider configured such that the field electrode structure is set to a potential lying between source and drain potentials. | 07-11-2013 |
20130342263 | HEATER FOR SEMICONDUCTOR DEVICE - Representative implementations of devices and techniques provide heating for a semiconductor device. A heating element is arranged to be located proximate to the semiconductor device and to increase a temperature of at least a portion of the semiconductor device during operation of the semiconductor device. | 12-26-2013 |
20140120673 | INTEGRATED CIRCUIT HAVING FIELD EFFECT TRANSISTORS AND MANUFACTURING METHOD - An integrated circuit having field effect transistors and manufacturing method. One embodiment provides an integrated circuit including a first FET and a second FET. At least one of source, drain, gate of the first FET is electrically connected to the corresponding one of source, drain, gate of the second FET. At least one further of source, drain, gate of the first FET and the corresponding one further of source, drain, gate of the second FET are connected to a circuit element, respectively. A dopant concentration of a body along a channel of each of the first and second FETs has a peak at a peak location within the channel. | 05-01-2014 |
20140284702 | FIELD PLATE TRENCH TRANSISTOR AND METHOD FOR PRODUCING IT - A field plate trench transistor having a semiconductor body. In one embodiment the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure. The field plate trench transistor has a voltage divider configured such that the field electrode structure is set to a potential lying between source and drain potentials. | 09-25-2014 |
Patent application number | Description | Published |
20120007176 | High-Voltage Bipolar Transistor with Trench Field Plate - A bipolar transistor structure includes an epitaxial layer on a semiconductor substrate, a bipolar transistor device formed in the epitaxial layer and a trench structure formed in the epitaxial layer adjacent at least two opposing lateral sides of the bipolar transistor device. The trench structure includes a field plate spaced apart from the epitaxial layer by an insulating material. The bipolar transistor structure further includes a base contact connected to a base of the bipolar transistor device, an emitter contact connected to an emitter of the bipolar transistor device and isolated from the base contact and an electrical connection between the emitter contact and the field plate. | 01-12-2012 |
20120126318 | Integrated Circuit Including Field Effect Transistor - An integrated circuit includes a semiconductor carrier including a first side and a second side opposite the first side. An FET is in a first area of the semiconductor carrier, and has a drain electrically coupled to a drain contact area at the first side and a source electrically coupled to a source contact area at the second side. First circuit elements are in a second area of the semiconductor carrier. The second area is electrically insulated from the semiconductor carrier surrounding the second area via a trench insulation extending through the semiconductor carrier from the first side to the second side. An interconnection level electrically interconnects the first circuit elements at the second side, and is electrically insulated from the source contact area in the entire second area via an insulating layer at the second side. A conductive pathway extends through the semiconductor carrier from the first side to the second side, and is electrically insulated from the semiconductor carrier surrounding the conductive pathway. At least one of the first circuit elements is electrically coupled to a contact area at the first side via the conductive pathway. | 05-24-2012 |
20130009252 | High Voltage Bipolar Transistor with Trench Field Plate - A bipolar transistor structure includes an epitaxial layer on a semiconductor substrate, a bipolar transistor device formed in the epitaxial layer and a trench structure formed in the epitaxial layer adjacent at least two opposing lateral sides of the bipolar transistor device. The trench structure includes a field plate spaced apart from the epitaxial layer by an insulating material. The bipolar transistor structure further includes a base contact connected to a base of the bipolar transistor device, an emitter contact connected to an emitter of the bipolar transistor device and isolated from the base contact and an electrical connection between the emitter contact and the field plate. | 01-10-2013 |
Patent application number | Description | Published |
20140205375 | Steering Spindle Arrangement - A steering arrangement includes a steering spindle having a steering spindle connection connected to a fork crown of a steering coupling via an intermediate piece. The steering spindle connection and the intermediate piece, which is designed as a hub, are formed as plug partners at ends facing each other, by means of at least one tongue and groove guide element pair positioned in the axial longitudinal direction, which provides a torque-transmitting priority control. Torque-transmitting priority control is achieved by a first guide element arranged on the steering spindle connection, a second guide element of the guide element pair arranged on the intermediate piece, and a clamping device that clamps the plug partners together in a plugging position. | 07-24-2014 |
20140241795 | Steering Arrangement - A steering arrangement includes a steering spindle and a steering coupling provided with a fork crown bearing a connecting element that connects an end of the steering spindle to the steering coupling in the form of a plug connection. To enable the combined steering spindle and steering coupling ends to be connected to each other in the correct relative position and thus to be able to prevent a defective assembly, the steering spindle end and the connecting element are coaxial plug partners on ends facing each other, by means of at least one tongue and groove guide element pair that provides a torque-transmitting priority control. The at least one groove and/or the at least one tongue of the guide element pair is molded on the interior of the shaft. A clamping device clamps the plug partners against each other in a plugging position so that they cannot come loose. | 08-28-2014 |
20140246839 | Steering Spindle Arrangement - A steering spindle has a steering spindle connection connected to a fork crown of a steering coupling via an intermediate piece. The steering spindle connection and the intermediate piece are formed as plug partners at ends facing each other, by means of at least one tongue and groove guide element pair, which provides a torque-transmitting priority control. A groove and a tongue of the at least one tongue and groove guide element pair are positioned in the longitudinal axial direction on the steering spindle connection and the intermediate piece. The steering arrangement includes a clamping device that clamps the plug partners to each other in a plugging position. | 09-04-2014 |