Okuno, JP
Akira Okuno, Minato-Ku JP
Akira Okuno, Kobe-Shi JP
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20100264197 | APPARATUS AND METHOD FOR SOLDERING FLAT WORK PIECE - A soldering apparatus including a vessel containing a molten solder, a casing defining therewithin a soldering chamber in which a flat overflowing wave of the molten solder is formed, a conveyor physically integrated with the casing for movement therewith and operable for transferring a printed circuit board through the soldering chamber, actuators and for vertically moving the casing, inert gas feeders for feeding an inert gas to the soldering chamber, and a controller for controlling the operation of the actuators and, so that the printed circuit board is contacted with the surface of the flat overflowing wave in an atmosphere of the inert gas during its passage through the soldering chamber. | 10-21-2010 |
Eiichi Okuno, Mizuho-Shi JP
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20090114969 | Silicon carbide semiconductor device and related manufacturing method - An SiC semiconductor device and a related manufacturing method are disclosed having a structure provided with a p | 05-07-2009 |
20090160008 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device that includes an n-type semiconductor substrate and an upper electrode formed on an upper face of the semiconductor substrate and a method of manufacturing the semiconductor device are provided. A p-type semiconductor region is repeatedly formed in the semiconductor substrate in at least one direction parallel to the substrate plane so as to be exposed on an upper face of the semiconductor substrate. The upper electrode includes a metal electrode portion; and a semiconductor electrode portion made of a semiconductor material whose band gap is narrower than that of the semiconductor substrate. The semiconductor electrode portion is provided on each p-type semiconductor region exposed on the upper face of the semiconductor substrate. The metal electrode portion is in Schottky contact with an n-type semiconductor region exposed on the upper face of the semiconductor substrate, and is in ohmic contact with the semiconductor electrode portion. | 06-25-2009 |
20090269908 | Manufacturing method of a semiconductor device - A manufacturing method of a semiconductor device comprises a process of doping conductive impurities in a silicon carbide substrate, a process of forming a cap layer on a surface of the silicon carbide substrate, a process of activating the conductive impurities doped in the silicon carbide substrate, a process of oxidizing the cap layer after a first annealing process, and a process of removing the oxidized cap layer. It is preferred that the cap layer is formed from material that includes metal carbide. Since the oxidation onset temperature of metal carbide is comparatively low, the oxidization of the cap layer becomes easy if metal carbide is included in the cap layer. Specifically, it is preferred that the cap layer is formed from metal carbide that has an oxidation onset temperature of 1000 degrees Celsius or below, such as tantalum carbide. | 10-29-2009 |
Eiji Okuno, Kyoto-Shi JP
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20090053020 | SUBSTRATE PROCESSING APPARATUS - An indexer robot includes first and second substrate holding mechanisms, first and second lifting/lowering mechanisms, a rotation mechanism and a moving mechanism. The first and second substrate holding mechanisms have arms and hands and provided on the first and second lifting/lowering mechanisms, respectively. The first and second lifting/lowering mechanisms can lift the first and second substrate holding mechanisms independently from each other. The first and second lifting/lowering mechanisms are provided on the rotation mechanism. The rotation mechanism is provided on the moving mechanism. | 02-26-2009 |
Gaku Okuno, Saitama JP
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20110114631 | METHOD OF MANUFACTURING HEAT-GENERATING PANEL, HEAT-GENERATING PANEL MANUFACTURED BY THE SAME, PANEL-SHAPED STRUCTURE, AND HEAT-GENERATING SYSTEM - A method of manufacturing a heat-generating panel | 05-19-2011 |
Harumi Okuno, Aichi JP
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20120236237 | DISPLAY DEVICE AND LIGHT BARRIER ELEMENT - A display device includes a display section, and a light barrier element. The light barrier element includes a pair of substrates, a liquid crystal layer that is provided between the pair of substrates and has a plurality of sub-regions that transmit or block light, and a plurality of spacers provided between the pair of substrates. The plurality of spacers are randomly arranged in part or all of a region in surfaces of the substrates. | 09-20-2012 |
Hirokazu Okuno, Osaka-Shi JP
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20120249619 | DISPLAY DEVICE - In a liquid crystal display device ( | 10-04-2012 |
Hiroki Okuno, Osaka-Shi JP
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20120136584 | DETECTION APPARATUS AND DETECTION METHOD FOR DETECTING MICROORGANISMS - A light receiving element provides a current signal corresponding to an amount of received light scattered by suspended particles moving at a predetermined speed to a pulse width measurement circuit and a current-voltage conversion circuit via a filter circuit. A pulse width measured from the current signal is converted into a voltage value based on a predetermined relationship by a pulse width-voltage conversion circuit, and is provided to a voltage comparison circuit. The current-voltage conversion circuit converts a peak value of the current signal into a voltage value, and an amplifier circuit amplifies the signal at a predetermined amplification factor and provides the same to the voltage comparison circuit. The voltage comparison circuit uses the voltage value converted from the pulse width as a boundary value, and the suspended particles causing the scattered light are detected as microorganisms when the peak voltage value is smaller than the boundary value. | 05-31-2012 |
20120154348 | DISPLAY CONTROL DEVICE - An air purifier includes a detection apparatus, calculates a relative value of the number of microorganisms detected from airborne particles by the detection apparatus to a prescribed total value, and determines a central angle α corresponding to the relative value. Further, regarding the number of airborne particles other than microorganisms detected by the detection apparatus as the number of dusts, relative value of dust particles to a prescribed total value is calculated, and the central angle β corresponding to the relative value is determined. On a display panel, the amount of microorganisms is displayed as a bacteria meter by the area from the start position to the angle α, and by the following area to the angle β, the number of dusts is displayed as a dust meter, in a circle graph. | 06-21-2012 |
20120315666 | DETECTION APPARATUS AND METHOD FOR DETECTING AIRBORNE BIOLOGICAL PARTICLES - In a detection apparatus, an inlet and an outlet are opened and an air introducing mechanism is driven to introduce air to a case, and airborne particles are electrically attracted and held on a collecting jig | 12-13-2012 |
20140166903 | PARTICLE DETECTOR - There is provided a particle detector that can increase a detection sensitivity to fluorescence emitted from biogenic particles. A particle detector for detecting biogenic particles includes a substrate having a principal surface and configured to collect the biogenic particles on the principal surface, a light emitting element configured to irradiate particles collected on the principal surface with excitation light, and a light receiving element configured to receive fluorescence emitted from the particles when the particles are irradiated with the excitation light from the light emitting element. An optical axis of the Fresnel lens and a ray direction of the excitation light intersect with each other. The principal surface is a mirror surface. | 06-19-2014 |
20140175304 | PARTICLE DETECTION DEVICE - A particle detection device detects a biological particle. The particle detection device includes a collection unit that collects a particle to a collection substrate, a fluorescence detection unit that emits excitation light toward the particle collected on the collection substrate and receives fluorescence emitted from the particle, and a cleaning unit that removes the particle from the collection substrate at a refreshing position separated from a collection/heating position and a detection position. At the collection/heating position, the particle is collected onto the collection substrate by the collection unit. At the detection position, fluorescence is received by the fluorescence detection unit. With such a structure, the particle detection device in which the particle is highly accurately detected is provided. | 06-26-2014 |
20140218810 | FRESNEL LENS - A Fresnel lens includes an incident surface that is flat, and a prism-forming surface that has a plurality of prisms, the prism-forming surface being provided on the side of the Fresnel lens opposite to the incident surface. Each of the prisms has a converging surface that is located on the side away from the optical axis of the Fresnel lens. | 08-07-2014 |
20150041681 | PARTICLE DETECTOR - There is provided a particle detector that can increase a detection sensitivity to fluorescence emitted from biogenic particles. A particle detector for detecting biogenic particles includes a substrate having a principal surface and configured to collect the biogenic particles on the principal surface, a light emitting element configured to irradiate particles collected on the principal surface with excitation light, and a light receiving element configured to receive fluorescence emitted from the particles when the particles are irradiated with the excitation light from the light emitting element. An optical axis of the Fresnel lens and a ray direction of the excitation light intersect with each other. The principal surface is a mirror surface. | 02-12-2015 |
Hiroki Okuno, Fukaya-City JP
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20120120379 | SYSTEM AND METHOD FOR CONTROLLING THE DISTORTION OF A RETICLE - An apparatus for controlling the distortion of a reticle ( | 05-17-2012 |
Iichi Okuno, Aichi JP
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20090267439 | GENERATOR CONSTITUTED TO GENERATE ELECTRIC POWER BY RING-SHAPED ROTATIONS - Provided is a generator in which straight rod magnets have been heated to form curved ones, with the identical polarity ends of the magnets having been forcibly butted together by diamagnetic connecting devices to form a field element ring. The field element ring is arranged through three Y-shaped sets (evenly spaced apart) of one inner and two outer roller devices set on a base steel sheet. Rotary drive force is applied from the centrally placed drive motor to one of the inner and outer roller devices to rotate the field element ring. Between, and in line with, the three sets of inner and outer roller devices are arranged three segments of an armature coil that is wound around the field element ring. In turn, the armature coil is encased within three segments of an armature core that are set on the base steel sheet. The rotary action of the field element ring within the armature coil generates a magnetic flux to admit into the armature coil, thus inducing an electromotive force. The electromotive force permeates the armature core, and thus the armature coil and the field element ring, to generate electricity. | 10-29-2009 |
Jinju Okuno, Toyohashi-Shi JP
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20090014942 | SLIDING SHEET FOR FIXING DEVICES, MANUFACTURING METHOD FOR SAME, FIXING DEVICE, AND IMAGE FORMING APPARATUS - A sliding sheet for fixing devices in the present invention is inserted in between an endless belt constituting one member out of two members which form a nip section for fixing operation and a pressure member for pressing the endless belt from an inner surface side toward the other member out of the two members. The sliding sheet, which is made of a single resin, repeatedly has a thick section and a thin section at least with respect to a sliding direction of the endless belt due to substantial difference in resin amount per unit area corresponding to positions within a sheet surface. | 01-15-2009 |
20090052956 | FIXING DEVICE SLIDE MEMBER AND FIXING DEVICE - A fixing device slide member has a surface | 02-26-2009 |
20090052958 | FIXING DEVICE AND IMAGE FORMING APPARATUS - An image forming apparatus includes a fixing device in which a width of a slide member is larger than a width of a pressurizing belt while both ends of the slide member are positioned outside of both ends of the pressurizing belt. The above-structured slide member makes it possible to prevent lubricant on the slide member from leaking out of the ends of the slide member and coming around the inner surface of the slide member, and thereby to prevent a pressing member beneath the slide member from swelling, resulting in avoidance of wrinkle generation on recording materials. | 02-26-2009 |
20130121716 | FIXATION UNIT AND IMAGE FORMING APPARATUS - A fixation unit which allows paper with a toner image formed thereon to be fed between a first roller and a second roller for fixing the toner image on the sheet. The fixation unit includes a drive controller. The drive controller rotates the first and second rollers on different driving conditions. The drive controller rotates the first roller at a constant circumferential speed at least in a state where the first and second rollers are in pressure contact with each other and rotates the second roller with a constant torque which is low enough for the second roller to stop rotating when the first roller stops rotating. | 05-16-2013 |
Jinjyu Okuno, Toyohashi-Shi JP
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20120281994 | FIXING DEVICE AND IMAGE FORMING APPARATUS - A fixing device includes a fixing unit with a nip, two rollers, a guide member, a detection unit and an urging unit. The detection unit is disposed substantially parallel to the guide member opposite to the guide member across a recording medium conveyed between the nip and the two rollers. The detection unit detects jamming of the recording medium on the basis of a pressure greater than a predetermined value applied by the recording medium between the nip and the two rollers. The distance between the guide member and the detection unit is greater than the distance between the guide member and the recording medium passing between the nip and the two rollers while being urged by the urging unit. | 11-08-2012 |
Kaname Okuno, Hyogo JP
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20120065708 | HAIR-GROWTH ADJUSTING LIGHT EMITTING DEVICE - A hair-growth adjusting light emitting device includes a device body, a light-emitting unit attached to the device body, and a locking unit for locking the light-emitting unit to the device body. The device body has a main capacitor, a device body connector, an electric power switch, a release switch, and an electric power supplying part. The light-emitting unit has a light-emitting body and a light-emitting body side connector. Furthermore, the hair-growth adjusting light emitting device includes a release restriction mechanism for preventing the light-emitting unit from being released by the release button when the electric power switch is at a power-on position where the electric power supplying part feeds the electric power to the main connector, and a power-on restriction mechanism for preventing the electric power switch from moving to the power-on position when the light-emitting unit is detached from the device body. | 03-15-2012 |
Kazuki Okuno, Itami-Shi JP
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20110070362 | BATTERY ELECTRODE SUBSTRATE, AND ELECTRODE EMPLOYING THE SAME - An electrode substrate for a battery has nickel applied as a coat on the surface of a base constituted of crossing of a plurality of fibers including a core formed of synthetic resin and a coating of synthetic resin having a softening temperature lower than the softening temperature of the synthetic resin forming the core. The electrode substrate has the fibers of the base fusion-bonded at a cross point by heat treatment. The ratio of the coating occupying a II-II cross section of the fiber cross point is larger than the ratio of the coating occupying a fiber cross section (III-III cross section) at a site other than at the cross point. | 03-24-2011 |
20110287279 | HIGHLY CORROSION-RESISTANT POROUS METAL MEMBER - A porous metal member composed of an alloy at least containing nickel and tungsten is provided. The alloy may contain 50 to 80 wt % of nickel and 20 to 50 wt % of tungsten and may further contain 10 wt % or less of phosphorus and/or 10 wt % or less of boron. Such a porous metal member can be produced by, for example, making a porous base such as a urethane foam be electrically conductive, forming an alloy film containing nickel and tungsten, then removing the porous base from the alloy film, and subsequently reducing the alloy. | 11-24-2011 |
20120067730 | MANUFACTURING METHOD OF ALUMINUM STRUCTURE AND ALUMINUM STRUCTURE - A porous resin article having a three-dimensional network structure is used. A resin molded body at least the surface of which has been subjected to conductive treatment is plated with aluminum in a molten salt bath to form an aluminum structure, thus forming a porous aluminum that includes an aluminum layer having a thickness in the range of 1 to 100 μm, has an aluminum purity of 98.0% or more and a carbon content of 1.0% or more and 2% or less, and contains inevitable impurities as the balance. Even with a porous resin molded body having a three-dimensional network structure, this allows the surface of the porous resin molded body to be plated with aluminum, thus forming a high-purity aluminum structure having a uniform thick film. | 03-22-2012 |
20120067731 | MANUFACTURING METHOD OF ALUMINUM STRUCTURE AND ALUMINUM STRUCTURE - There is provided a manufacturing method of an aluminum structure, including a conductive treatment process of forming an electrically conductive layer made of aluminum on a surface of a resin molded body and a plating process of plating the resin molded body subjected to the conductive treatment process with aluminum in a molten salt bath. Even with a porous resin molded body having a three-dimensional network structure, the method allows the surface of the porous resin molded body to be plated with aluminum, thus forming a high-purity aluminum structure having a uniform thick film. Porous aluminum having a large area is also provided. | 03-22-2012 |
20120070683 | MANUFACTURING METHOD OF ALUMINUM STRUCTURE AND ALUMINUM STRUCTURE - There is provided a manufacturing method of an aluminum structure, including a conductive treatment process of forming an electrically conductive layer on a surface of a resin molded body, the electrically conductive layer being made of one or more metals selected from the group consisting of gold, silver, platinum, rhodium, ruthenium, palladium, nickel, copper, cobalt, iron, and aluminum, and a plating process of plating the resin molded body subjected to the conductive treatment process with aluminum in a molten salt bath. The manufacturing method of an aluminum structure allows aluminum plating on the surface of even a porous resin molded body having a three-dimensional network structure. In particular, there is also provided a manufacturing method of an aluminum structure that can form porous aluminum having a large area. | 03-22-2012 |
20120070735 | METHOD FOR PRODUCING POROUS METAL BODY, POROUS ALUMINUM BODY, BATTERY ELECTRODE MATERIAL INCLUDING POROUS METAL BODY OR POROUS ALUMINUM BODY, AND ELECTRODE MATERIAL FOR ELECTRICAL DOUBLE LAYER CAPACITOR - A porous metal body containing continuous pores and having a low oxygen content is provided by decomposing a porous resin body that contains continuous pores and has a layer of a metal thereon by heating the porous resin body at a temperature equal to or less than the melting point of the metal while the porous resin body is immersed in a first molten salt and a negative potential is applied to the metal layer; and a method for producing the porous metal body is provided. | 03-22-2012 |
20120183436 | METHOD OF PRODUCING ALUMINUM STRUCTURE AND ALUMINUM STRUCTURE - Provided is a method of producing an aluminum structure using a porous resin molded body having a three-dimensional network structure, with which it is possible to form an aluminum structure having a low oxide content in the surface of aluminum (i.e., having an oxide film with a small thickness), and in particular, it is possible to obtain an aluminum porous body that has a large area. The method includes a step of preparing an aluminum-coated resin molded body in which an aluminum layer is formed, directly or with another layer therebetween, on a surface of a resin molded body composed of urethane, and a step of decomposing the resin molded body by bringing the aluminum-coated resin molded body into contact with concentrated nitric acid with a concentration of 62% or more. | 07-19-2012 |
20120183804 | METHOD OF PRODUCING ALUMINUM STRUCTURE AND ALUMINUM STRUCTURE - Provided is a method of producing an aluminum structure using a porous resin molded body having a three-dimensional network structure, with which it is possible to form an aluminum structure having a low oxide content in the surface of aluminum (i.e., having an oxide film with a small thickness), and in particular, it is possible to obtain an aluminum porous body that has a large area. The method includes a step of preparing an aluminum-coated resin molded body in which an aluminum layer is formed, directly or with another layer therebetween, on a surface of a resin molded body composed of urethane, and a heat treatment step in which the aluminum-coated resin molded body is subjected to heat treatment at a temperature equal to or higher than 270° C. and lower than 660° C. to decompose the resin molded body. | 07-19-2012 |
20120321951 | METHOD FOR PRODUCING POROUS METAL BODY, POROUS ALUMINUM BODY, BATTERY ELECTRODE MATERIAL INCLUDING POROUS METAL BODY OR POROUS ALUMINUM BODY, AND ELECTRODE MATERIAL FOR ELECTRICAL DOUBLE LAYER CAPACITOR - A porous metal body containing continuous pores and having a low oxygen content is provided by decomposing a porous resin body that contains continuous pores and has a layer of a metal thereon by heating the porous resin body at a temperature equal to or less than the melting point of the metal while the porous resin body is immersed in a first molten salt and a negative potential is applied to the metal layer; and a method for producing the porous metal body is provided. | 12-20-2012 |
20120321952 | METHOD FOR PRODUCING POROUS METAL BODY, POROUS ALUMINUM BODY, BATTERY ELECTRODE MATERIAL INCLUDING POROUS METAL BODY OR POROUS ALUMINUM BODY, AND ELECTRODE MATERIAL FOR ELECTRICAL DOUBLE LAYER CAPACITOR - A porous metal body containing continuous pores and having a low oxygen content is provided by decomposing a porous resin body that contains continuous pores and has a layer of a metal thereon by heating the porous resin body at a temperature equal to or less than the melting point of the metal while the porous resin body is immersed in a first molten salt and a negative potential is applied to the metal layer; and a method for producing the porous metal body is provided. | 12-20-2012 |
20130108947 | POROUS CURRENT COLLECTOR, METHOD OF PRODUCING THE SAME AND FUEL CELL INCLUDING POROUS CURRENT COLLECTOR | 05-02-2013 |
20130148265 | ELECTRODE FOR ELECTRIC STORAGE DEVICE, ELECTRIC STORAGE DEVICE AND MANUFACTURING METHOD OF ELECTRODE FOR ELECTRIC STORAGE DEVICE - An electrode for an electric storage device includes at least an active material selected from the group consisting of a carbon nanotube, activated carbon, hard carbon, graphite, graphene and a carbon nanohorn; an ionic liquid; and a three-dimensional network metal porous body. | 06-13-2013 |
20130266862 | HIGHLY CORROSION-RESISTANT POROUS METAL BODY AND METHOD FOR PRODUCING THE SAME - Provided are a porous metal body that is excellent in terms of corrosion resistance and that is suitable for a collector for batteries such as lithium-ion batteries, capacitors, or fuel cells; and methods for producing the porous metal body. A production method includes a step of coating a porous nickel body with an alloy containing at least nickel and tungsten or a metal containing at least tin; and a subsequent step of a heat treatment. Another production method includes a step of forming a nickel-plated layer on a porous base and then continuously forming an alloy-plated layer containing at least nickel and tungsten or tin, a step of removing the porous base, and a step of reducing metal. Such a method can provide a porous metal body in which tungsten or tin is diffused in a porous nickel body or a nickel-plated layer. | 10-10-2013 |
20140087206 | POROUS METAL BODY AND METHOD OF PRODUCING THE SAME - Provided is a porous metal body containing at least nickel, tin, and chromium. An example of a method of producing such a porous metal body is a method including a conductive-coating-layer formation step of forming a conductive coating layer containing chromium on a surface of a porous base formed of a resin material; a metal-layer formation step of forming a nickel layer and a tin layer in any order on a surface of the conductive coating layer; a removal step of removing the porous base; and a diffusion step of, by a heat treatment, causing interdiffusion of metal atoms between the nickel layer and the tin layer and diffusing chromium contained in the conductive coating layer into the nickel layer and the tin layer. | 03-27-2014 |
Kazuki Okuno, Osaka-Shi JP
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20120115035 | THREE-DIMENSIONAL NET-LIKE ALUMINUM POROUS BODY, ELECTRODE USING THE ALUMINUM POROUS BODY, NONAQUEOUS ELECTROLYTE BATTERY USING THE ELECTRODE, AND NONAQUEOUS ELECTROLYTE CAPACITOR USING THE ELECTRODE - Provided are a three-dimensional net-like aluminum porous body in which the diameter of cells in the porous body is uneven in the thickness direction of the porous body; a current collector and an electrode each using the aluminum porous body; and methods for producing these members. The porous body is a three-dimensional net-like aluminum porous body in a sheet form, for a current collector, in which the diameter of cells in the porous body is uneven in the thickness direction of the porous body. When a cross section in the thickness direction of the three-dimensional net-like aluminum porous body is divided into three regions of a region 1, a region 2 and a region 3 in this order, the average cell diameter of the regions 1 and 3 is preferably different from the cell diameter of the region 2. | 05-10-2012 |
20120263993 | ELECTROCHEMICAL DEVICE - Provided is an electrochemical device which is easy to produce and which has excellent characteristics. An electrochemical device includes a first electrode including an aluminum porous body having interconnecting pores and an active material filled into the pores of the aluminum porous body, a separator, and a second electrode, the first electrode, the separator, and the second electrode being stacked, in which a plurality of electrode bodies each including the first electrode, the separator, and the second electrode are stacked without being wound. | 10-18-2012 |
20120264022 | ELECTRODE FOR ELECTROCHEMICAL DEVICE AND METHOD FOR PRODUCING THE SAME - Provided is electrochemical device, such as a nonaqueous electrolyte battery, which has excellent discharge characteristics and the like by forming a thick electrode using a metal porous body, such as an aluminum porous body, as a current collector. An electrode for an electrochemical device includes a metal porous body filled with an active material, in which the metal porous body is sheet-like and is a stacked porous body in which a plurality of single-layer metal porous bodies are stacked and electrically connected to each other. The metal porous body may be an aluminum porous body having a three-dimensional network structure. | 10-18-2012 |
20120288757 | THREE-DIMENSIONAL NETWORK ALUMINUM POROUS BODY FOR CURRENT COLLECTOR, ELECTRODE USING THE ALUMINUM POROUS BODY, NONAQUEOUS ELECTROLYTE BATTERY, CAPACITOR AND LITHIUM-ION CAPACITOR - It is an object of the present invention to provide a sheet-shaped three-dimensional network aluminum porous body for a current collector which is suitably used for electrodes for nonaqueous electrolyte batteries and electrodes for capacitors, an electrode and a capacitor each using the same. The three-dimensional network aluminum porous body for a current collector of the present invention is a sheet-shaped three-dimensional network aluminum porous body for a current collector used for electrodes, and the aluminum porous body has been made to have an average cell diameter of 50 μm or more and 1000 μm or less in order to enhance the filling performance of an active material slurry. | 11-15-2012 |
20120288758 | THREE-DIMENSIONAL NETWORK ALUMINUM POROUS BODY FOR CURRENT COLLECTOR, ELECTRODE USING THE ALUMINUM POROUS BODY, AND BATTERY, CAPACITOR AND LITHIUM-ION CAPACITOR EACH USING THE ELECTRODE - It is an object of the present invention to provide a sheet-shaped three-dimensional network aluminum porous body for a current collector which is suitably used for electrodes for nonaqueous electrolyte batteries and electrodes for capacitors, an electrode and a capacitor each using the same. In such a three-dimensional network aluminum porous body for a current collector, the aluminum porous body has been made to have a compressive strength in a thickness direction of 0.2 MPa or more in order to efficiently fill an active material into the sheet-shaped three-dimensional network aluminum porous body. | 11-15-2012 |
20120292191 | METHOD OF PRODUCING ALUMINUM STRUCTURE AND ALUMINUM STRUCTURE - A surface of a porous resin body having a three-dimensional network structure can be plated with aluminum at a uniform thickness and thus a high-purity aluminum structure is formed. A method for producing an aluminum structure includes a step of plating a resin porous body, which has a three-dimensional network structure and has a surface that has been made electrically conductive, with aluminum in a molten-salt bath, in which the molten salt is a salt mixture of aluminum chloride and an organic salt and plating is conducted while controlling the temperature of the molten-salt bath to be 45° C. or higher and 100° C. or lower. Preferably, the molten-salt bath further contains 1,10-phenanthroline at a concentration of 0.25 g/l or more and 7 g/l or less. | 11-22-2012 |
20120295169 | AIR BATTERY AND ELECTRODE - Provided is a structure for effectively utilizing a novel metal porous body, such as an aluminum porous body, having a three-dimensional network structure as a battery electrode. | 11-22-2012 |
20120308886 | THREE-DIMENSIONAL NETWORK ALUMINUM POROUS BODY FOR CURRENT COLLECTOR AND METHOD FOR PRODUCING THE SAME - The present invention provides an electrode current collector for a secondary battery or the like, wherein a compressed part for attaching a tab lead to an end part of the three-dimensional network aluminum porous body to be used as an electrode current collector of a secondary battery, a capacitor using a nonaqueous electrolytic solution or the like is formed, and a method for producing the same. That is, the present invention provides a three-dimensional network aluminum porous body for a current collector having a compressed part compressed in a thickness direction for connecting a tab lead to its end part, wherein the compressed part is formed at a central part in the thickness direction of the aluminum porous body. | 12-06-2012 |
20120312692 | ALUMINUM POROUS BODY AND METHOD FOR PRODUCING THE SAME - Provided is a method for readily removing urethane resin without causing oxidation of aluminum, from an aluminum structure in which an aluminum film is formed on the surface of a urethane resin porous body having a three-dimensional network structure: a method for producing an aluminum porous body, including forming an aluminum film having a purity of 99.9% by mass or more on a surface of a urethane resin porous body having a three-dimensional network structure to provide an aluminum structure including the urethane resin porous body and the aluminum film, and subjecting the aluminum structure to a heat treatment at 370° C. or more and less than 660° C. in the air to remove urethane resin and to provide an aluminum porous body. | 12-13-2012 |
20120315540 | THREE-DIMENSIONAL NETWORK ALUMINUM POROUS BODY FOR CURRENT COLLECTOR, ELECTRODE USING THE ALUMINUM POROUS BODY, AND NONAQUEOUS ELECTROLYTE BATTERY, NONAQUEOUS ELECTROLYTIC SOLUTION CAPACITOR AND LITHIUM-ION CAPACITOR EACH USING THE ELECTRODE - It is an object of the present invention to provide an aluminum porous body for a current collector in which electric resistivity is reduced to enhance current collecting performance, and an electrode, a nonaqueous electrolyte battery, a capacitor and a lithium-ion capacitor each using the aluminum porous body for a current collector. Such a sheet-shaped three-dimensional network aluminum porous body of the present invention is a three-dimensional network aluminum porous body for a current collector including an electric resistivity in an in-plane direction and in a thickness direction of 0.5 mΩcm or less. An electrode can be configured by using the three-dimensional network aluminum porous body for a current collector, and further a nonaqueous electrolyte battery, a capacitor and a lithium-ion capacitor can be configured by using the electrode. | 12-13-2012 |
20120328941 | CURRENT COLLECTOR USING THREE-DIMENSIONAL NETWORK ALUMINUM POROUS BODY, ELECTRODE USING THE CURRENT COLLECTOR, AND NONAQUEOUS ELECTROLYTE BATTERY, CAPACITOR AND LITHIUM-ION CAPACITOR WITH NONAQUEOUS ELECTROLYTIC SOLUTION, EACH USING THE ELECTRODE, AND METHOD FOR PRODUCING THE ELECTRODE - It is an object of the present invention to provide an electrode using a current collector made of an aluminum porous body which is suitably used for an electrode for a nonaqueous electrolyte battery and an electrode for a capacitor, and a method for producing the electrode. In the current collector of the present invention, a strip-shaped compressed part compressed in a thickness direction is formed at one end part of a three-dimensional network aluminum porous body and a tab lead is bonded to the compressed part by welding. The width of the compressed part is 2 to 10 mm. Further, the electrode is formed by filling the current collector with an active material. | 12-27-2012 |
20120328957 | THREE-DIMENSIONAL NETWORK ALUMINUM POROUS BODY, ELECTRODE USING THE ALUMINUM POROUS BODY, AND NONAQUEOUS ELECTROLYTE BATTERY, CAPACITOR AND LITHIUM-ION CAPACITOR WITH NONAQUEOUS ELECTROLYTIC SOLUTION, EACH USING THE ELECTRODE - It is an object of the present invention to provide a three-dimensional network aluminum porous body which enables to produce an electrode continuously, an electrode using the aluminum porous body, and a method for producing the electrode. The present invention provides a long sheet-shaped three-dimensional network aluminum porous body to be used as a base material in a method for producing an electrode including at least winding off, a thickness adjustment step, a lead welding step, an active material filling step, a drying step, a compressing step, a cutting step and winding-up, wherein the three-dimensional network aluminum porous body has a tensile strength of 0.2 MPa or more and 5 MPa or less. | 12-27-2012 |
20130008217 | METHOD FOR PRODUCING ELECTRODE FOR ELECTROCHEMICAL ELEMENT - It is an object of the present invention to provide a method for producing an electrode for an electrochemical element, which can easily adjust a capacity and can produce the electrochemical element at low cost. The method for producing an electrode for an electrochemical element of the present invention includes a thickness adjustment step of compressing an aluminum porous body having continuous pores to adjust the thickness of the aluminum porous body to a predetermined thickness, and a filling step of filling the aluminum porous body, the thickness of which is adjusted, with an active material. | 01-10-2013 |
20130010401 | THREE-DIMENSIONAL NETWORK ALUMINUM POROUS BODY, ELECTRODE USING THE ALUMINUM POROUS BODY, AND NONAQUEOUS ELECTROLYTE BATTERY, CAPACITOR USING NONAQUEOUS ELECTROLYTIC SOLUTION AND LITHIUM-ION CAPACITOR USING NONAQUEOUS ELECTROLYTIC SOLUTION, EACH USING THE ELECTRODE - A three-dimensional network aluminum porous body in which the amount of aluminum forming a skeleton of the three-dimensional network aluminum porous body is uneven in the thickness direction, and a current collector and an electrode each using the aluminum porous body, and a manufacturing method thereof. In such a sheet-shaped three-dimensional network aluminum porous body for a current collector, the amount of aluminum forming a skeleton of the three-dimensional network aluminum porous body is uneven in the thickness direction. For example, in the case where a cross section in the thickness direction of the three-dimensional network aluminum porous body is divided into three regions of a region | 01-10-2013 |
20130040195 | ELECTRODE USING THREE-DIMENSIONAL NETWORK ALUMINUM POROUS BODY, AND NONAQUEOUS ELECTROLYTE BATTERY, CAPACITOR AND LITHIUM-ION CAPACITOR WITH NONAQUEOUS ELECTROLYTIC SOLUTION, EACH USING THE ELECTRODE - In an electrode according to the present invention including a three-dimensional network aluminum porous body as a base material, the electrode is a sheet-shaped electrode, and a cell of the three-dimensional network aluminum porous body has an elliptic shape having a minor axis in the thickness direction of the electrode in a cross section parallel to the longitudinal direction and thickness direction of the electrode, and a cell of the three-dimensional network aluminum porous body has an elliptic shape having a minor axis in the thickness direction of the electrode in a cross section parallel to the width direction and thickness direction of the electrode. The electrode is preferably obtained by subjecting the three-dimensional network aluminum porous body to at least a current collecting lead welding step, an active material filling step and a compressing step. | 02-14-2013 |
20130045425 | THREE-DIMENSIONAL NETWORK ALUMINUM POROUS BODY, CURRENT COLLECTOR AND ELECTRODE EACH USING THE ALUMINUM POROUS BODY, AND NONAQUEOUS ELECTROLYTE BATTERY, CAPACITOR AND LITHIUM-ION CAPACITOR WITH NONAQUEOUS ELECTROLYTIC SOLUTION, EACH USING THE ELECTRODE - It is an object of the present invention to provide a three-dimensional network aluminum porous body which can be used for a process continuously producing an electrode and enables to produce a current collector having small electric resistance in the current collecting direction, and an electrode using the aluminum porous body, and a production method thereof. In a sheet-shaped three-dimensional network aluminum porous body for a current collector, when one of two directions orthogonal to each other is taken as an X-direction and the other is taken as a Y-direction, a cell diameter in the X-direction of the three-dimensional network aluminum porous body differs from a cell diameter in the Y-direction thereof. | 02-21-2013 |
20130288123 | THREE-DIMENSIONAL NETWORK ALUMINUM POROUS BODY FOR CURRENT COLLECTOR, ELECTRODE USING THE ALUMINUM POROUS BODY, AND BATTERY, CAPACITOR AND LITHIUM-ION CAPACITOR EACH USING THE ELECTRODE - It is an object of the present invention to provide a sheet-shaped three-dimensional network aluminum porous body for a current collector which is suitably used for electrodes for nonaqueous electrolyte batteries and electrodes for capacitors, an electrode and a capacitor each using the same. In such a three-dimensional network aluminum porous body for a current collector, the aluminum porous body has been made to have a compressive strength in a thickness direction of 0.2 MPa or more in order to efficiently fill an active material into the sheet-shaped three-dimensional network aluminum porous body. | 10-31-2013 |
20140234720 | ELECTRODE MATERIAL; AND BATTERY, NONAQUEOUS-ELECTROLYTE BATTERY, AND CAPACITOR ALL INCORPORATING THE MATERIAL - The invention offers an electrode material that can accomplish both high capacity and high output and a battery, a nonaqueous-electrolyte battery, and a capacitor all incorporating the electrode material. The electrode material has a sheet-shaped aluminum porous body carrying an active material. The above-described aluminum porous body has a skeleton structure that is formed of an aluminum layer and that has a vacant space at the interior. When observed by performing cutting in a direction parallel to the direction of thickness of the sheet, the above-described vacant space in the skeleton structure has an average area of 500 μm | 08-21-2014 |
20140346050 | METHOD FOR PRODUCING ALUMINUM FILM AND METHOD FOR PRODUCING ALUMINUM FOIL - A method for producing an aluminum film by electrodepositing aluminum on a base in an electrolytic cell to which a liquid electrolyte containing a molten salt is fed includes adjusting a concentration of an additive in such a manner that a measured value of an overvoltage is within a predetermined range on the basis of a predetermined relationship between the overvoltage and the concentration of the additive added to the molten salt upon electrodepositing aluminum in the liquid electrolyte. | 11-27-2014 |
Kazuo Okuno, Hyogo JP
Kazutoshi Okuno, Ibaraki JP
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20090210966 | rice blast susceptibility gene pi21, resistance gene pi21 and uses thereof - The present inventors succeeded in isolating the rice field resistance gene pi21 by linkage analysis, and found that field resistance to blast in plants could be modified by introducing or controlling the expression of the gene. Thus, it became possible to efficiently confer plants with field resistance. It also became possible to select, at an early stage, rice plants having field resistance to blast. Moreover, by changing the tissue specificity of expression and the expression level of the gene involved in field resistance, varieties having resistance as well as high practical use can be grown. | 08-20-2009 |
20110083233 | RICE BLAST SUSCEPTIBILITY GENE Pi21, RESISTANCE GENE pi21 AND USES THEREOF - The present inventors succeeded in isolating the rice field resistance gene pi21 by linkage analysis, and found that field resistance to blast in plants could be modified by introducing or controlling the expression of the gene. Thus, it became possible to efficiently confer plants with field resistance. It also became possible to select, at an early stage, rice plants having field resistance to blast. Moreover, by changing the tissue specificity of expression and the expression level of the gene involved in field resistance, varieties having resistance as well as high practical use can be grown. | 04-07-2011 |
20120083595 | RICE BLAST SUSCEPTIBILITY GENE Pi21, RESISTANCE GENE pi21, AND USES THEREOF - The present inventors succeeded in isolating the rice field resistance gene pi21 by linkage analysis, and found that field resistance to blast in plants could be modified by introducing or controlling the expression of the gene. Thus, it became possible to efficiently confer plants with field resistance. It also became possible to select, at an early stage, rice plants having field resistance to blast. Moreover, by changing the tissue specificity of expression and the expression level of the gene involved in field resistance, varieties having resistance as well as high practical use can be grown. | 04-05-2012 |
Kenichi Okuno, Yokohama-Shi JP
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20090074584 | NICKEL-BASED ALLOY FOR TURBINE ROTOR OF STEAM TURBINE AND TURBINE ROTOR OF STEAM TURBINE - A Nickel-based alloy for a turbine rotor of a steam turbine contains C: 0.01 to 0.15, Cr: 18 to 28, Co: 10 to 15, Mo: 8 to 12, Al: 1.5 to 2, Ti: 0.1 to 0.6, B: 0.001 to 0.006, Ta: 0.1 to 0.7 in % by weight, and the remaining portion is composed of Ni and unavoidable impurities. The Nickel-based alloy is composed of the above-stated chemical composition range, and thereby, a mechanical strength improves while maintaining forgeability as same as a conventional steel. | 03-19-2009 |
20090285692 | NI-BASE ALLOY FOR TURBINE ROTOR OF STEAM TURBINE AND TURBINE ROTOR OF STEAM TURBINE - An Ni-base alloy for a turbine rotor of a steam turbine contains in percent by weight C: 0.01 to 0.15, Cr: 15 to 28, Co: 10 to 15, Mo: 8 to 12, Al: 1.5 to 2, Ti: 0.1 to 0.6, B: 0.001 to 0.006, Re: 0.5 to 3, and the balance of Ni and unavoidable impurities. | 11-19-2009 |
20120160373 | FORGING HEAT RESISTANT STEEL, MANUFACTURING METHOD THEREOF, FORGED PARTS AND MANUFACTURING METHOD THEREOF - A forging heat resistant steel of an embodiment contains in percent by mass C: 0.05-0.2, Si: 0.01-0.1, Mn: 0.01-0.15, Ni: 0.05-1, Cr: 8 or more and less than 10, Mo: 0.05-1, V: 0.05-0.3, Co: 1-5, W: 1-2.2, N: 0.01 or more and less than 0.015, Nb: 0.01-0.15, B: 0.003-0.03, and a remainder comprising Fe and unavoidable impurities. | 06-28-2012 |
20120160376 | HEAT RESISTANT CAST STEEL, MANUFACTURING METHOD THEREOF, CAST PARTS OF STEAM TURBINE, AND MANUFACTURING METHOD OF CAST PARTS OF STEAM TURBINE - A heat resistant cast steel of an embodiment contains in percent by mass C: 0.05-0.15, Si: 0.03-0.2, Mn: 0.1-1.5, Ni: 0.1-1, Cr: 8-10.5, Mo: 0.2-1.5, V: 0.1-0.3, Co: 0.1-5, W: 0.1-5, N: 0.005-0.03, Nb: 0.01-0.2, B: 0.002-0.015, Ti: 0.01-0.1, and a remainder comprising Fe and unavoidable impurities. | 06-28-2012 |
20120261038 | LOW ALLOY STEEL FOR GEOTHERMAL POWER GENERATION TURBINE ROTOR, AND LOW ALLOY MATERIAL FOR GEOTHERMAL POWER GENERATION TURBINE ROTOR AND METHOD FOR MANUFACTURING THE SAME - A low alloy steel ingot contains from 0.15 to 0.30% of C, from 0.03 to 0.2% of Si, from 0.5 to 2.0% of Mn, from 0.1 to 1.3% of Ni, from 1.5 to 3.5% of Cr, from 0.1 to 1.0% of Mo, and more than 0.15 to 0.35% of V, and optionally Ni, with a balance being Fe and unavoidable impurities. Performing quality heat treatment including a quenching step and a tempering step to the low alloy steel ingot to obtain a material, which has a grain size number of from 3 to 7 and is free from pro-eutectoid ferrite in a metallographic structure thereof, and which has a tensile strength of from 760 to 860 MPa and a fracture appearance transition temperature of not higher than 40 ° C. | 10-18-2012 |
20140037431 | SEALING STRUCTURE IN STEAM TURBINE - According to an embodiment, a rotor blade cover section is integrated with the rotor blades at leading ends thereof. A plurality of sealing fins is disposed at the rotor blade cover section, the sealing fins forming a predetermined clearance relative to an inner peripheral portion of the nozzle outer ring. An annular solid particle trapping space is disposed at the inner peripheral portion of the nozzle outer ring, the solid particle trapping space communicating with an inlet of a steam leak and trapping solid particles that flow in with steam. In the sealing structure, the nozzle outer ring has a through hole through which the solid particles are to be discharged from the solid particle trapping space toward a downstream stage of the steam turbine. | 02-06-2014 |
Kenichi Okuno, Kanagawa-Ken JP
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20090246029 | TURBINE ROTOR BLADE, TURBINE ROTOR AND STEAM TURBINE EQUIPPED WITH THE SAME - A turbine rotor blade according to the present invention includes a cover provided at the top of an effective blade portion and a blade-fitting portion provided at the bottom of the effective blade portion. A turbine wheel is provided with a turbine-wheel engagement portion to which the blade-fitting portion is fittable. The turbine rotor blade is a portion of a blade array structure formed by arranging the cover and a neighboring cover in contact with each other. The blade-fitting portion is provided with an anti-twist segment, and the turbine-wheel engagement portion is provided with an untwist restraining segment engageable to the anti-twist segment. | 10-01-2009 |
Koji Okuno, Nishikasugai-Gun JP
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20090197118 | Method for producing Group III nitride-based compound semiconductor, wafer, and Group III nitride-based compound semiconductor device - Provided is a method for producing a Group III nitride-based compound semiconductor having an M-plane main surface. The method employs a sapphire substrate having a main surface which is inclined by 30° with respect to R-plane about a line of intersection L | 08-06-2009 |
20090309126 | Group III nitride-based compound semiconductor light-emitting device and production method therefor - Provided is a Group III nitride-based compound semiconductor light-emitting device including aluminum regions. The Group III nitride-based compound semiconductor light-emitting device includes a sapphire substrate; aluminum regions which are formed on the substrate; an AlN buffer layer; an Si-doped GaN n-contact layer; an n-cladding layer formed of multiple layer units, each including an undoped In | 12-17-2009 |
Koji Okuno, Aichi-Ken JP
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20100248455 | Manufacturing method of group III nitride semiconductor - A manufacturing method of a group III nitride semiconductor comprising: preparing a substrate including a buffer layer; forming a first layer on the buffer layer from a group III nitride semiconductor by MOCVD while doping an anti-surfactant, wherein a thickness of the first layer is equal to or thinner than 2 μm; forming a second layer on the first layer from a group III nitride semiconductor by MOCVD while doping at least one of surfactant and an anti-surfactant; and controlling a crystalline quality and a surface flatness of the second layer by adjusting an amount of the anti-surfactant and the surfactant doped during the formation of the second layer. | 09-30-2010 |
20100308437 | METHOD FOR PRODUCING GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR, WAFER INCLUDING GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR, AND GROUP III NITRIDED-BASED COMPOUND SEMICONDUCTOR DEVICE - To produce a Group III nitride-based compound semiconductor having a m-plane main surface and uniformly oriented crystal axes. | 12-09-2010 |
20110168974 | GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREFOR - The object of the present invention is to improve extraction efficiency of light of a Group III nitride-based compound semiconductor light-emitting device of a multiple quantum well structure. The device comprises a multiple quantum well structure comprising a well layer comprising a semiconductor including at least In for composition, a protective layer which comprises a semiconductor including at least Al and Ga for composition and has a band gap larger than a band gap of the well layer and is formed on and in contact with the well layer in a positive electrode side. And also the device comprises a barrier layer comprising a band gap which is larger than a band gap of the well layer and is smaller than a band gap of the protective layer, and formed on and in contact with the protective layer in a positive electrode side and a periodical structure of the well layer, the protective layer and the barrier layer. | 07-14-2011 |
Koji Okuno, Kiyosu-Shi JP
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20100102360 | Method for producing group III nitride semiconductor and template substrate - The present invention provides a method for producing a Group III nitride semiconductor. The method includes forming a groove in a surface of a growth substrate through etching; forming a buffer film on the groove-formed surface of the growth substrate through sputtering; heating, in an atmosphere containing hydrogen and ammonia, the substrate to a temperature at which a Group III nitride semiconductor of interest is grown; and epitaxially growing the Group III nitride semiconductor on side surfaces of the groove at the growth temperature. The thickness of the buffer film or the growth temperature is regulated so that the Group III nitride semiconductor is grown primarily on the side surfaces of the groove in a direction parallel to the main surface of the growth substrate. The thickness of the buffer film is regulated to be smaller than that of a buffer film which is employed for epitaxially growing the Group III nitride semiconductor on a planar growth substrate uniformly in a direction perpendicular to the growth substrate. The growth temperature is regulated to be lower than a temperature at which the Group III nitride semiconductor is epitaxially grown on a planar growth substrate uniformly in a direction perpendicular to the growth substrate. The growth temperature is preferably 1,020 to 1,100° C. The buffer film employed is an AlN film having a thickness of 150 Å or less. | 04-29-2010 |
20110240956 | Group III nitride semiconductor light-emitting device - The present invention provides a Group III nitride semiconductor light-emitting device whose main surface is a plane which provides an internal electric field of zero, and which exhibits improved emission performance. The light-emitting device includes a sapphire substrate which has, in a surface thereof, a plurality of dents which are arranged in a stripe pattern as viewed from above; an n-contact layer formed on the dented surface of the sapphire substrate; a light-emitting layer formed on the n-contact layer; an electron blocking layer formed on the light-emitting layer; a p-contact layer formed on the electron blocking layer; a p-electrode; and an n-electrode. The electron blocking layer has a thickness of 2 to 8 nm and is formed of Mg-doped AlGaN having an Al compositional proportion of 20 to 30%. | 10-06-2011 |
20110240957 | Group lll nitride semiconductor light-emitting device - The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved emission performance without increasing driving voltage. The Group III nitride semiconductor light-emitting device includes at least an n-type-layer-side cladding layer, a light-emitting layer, and a p-type-layer-side cladding layer, each of the layers being formed of a Group III nitride semiconductor. The n-type-layer-side cladding layer is a superlattice layer having a periodic structure including an In | 10-06-2011 |
20110244610 | METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present invention provides a method for producing a Group III nitride semiconductor light-emitting device whose main surface is a plane that provides an internal electric field of zero, and which exhibits improved light extraction performance. In the production method, one surface of an a-plane sapphire substrate is subjected to dry etching, to thereby form an embossment pattern having a plurality of mesas which are arranged in a honeycomb-dot pattern as viewed from above; and an n-type layer, a light-emitting layer, and a p-type layer, each of which is formed of a Group III nitride semiconductor layer having an m-plane main surface, are sequentially stacked on the surface of the sapphire substrate on which the mesas are formed. Subsequently, a p-electrode is formed on the p-type layer, and the p-electrode is bonded to a support substrate via a metal layer. Next, the sapphire substrate is removed through the laser lift-off process. On the thus-exposed surface of the n-type layer is formed an embossment pattern having dents provided through transfer of the mesas of the embossment pattern of the sapphire substrate. Then, the emboss-patterned surface of the n-type layer is subjected to wet etching, to thereby form numerous etched pits. | 10-06-2011 |
20120126241 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREFOR - A Group III nitride semiconductor light-emitting device includes a sapphire substrate having an embossment on a surface thereof; and an n-type layer, a light-emitting layer, and a p-type layer, which are sequentially stacked on the embossed surface of the sapphire substrate via a buffer layer, and each of which is formed of a Group HI nitride semiconductor. The embossment has a structure including a first stripe-pattern embossment which is formed on a surface of the sapphire substrate, and whose stripe direction corresponds to the x-axis direction; and a second stripe-pattern embossment which is formed atop the first stripe-pattern embossment, and whose stripe direction corresponds to the y-axis direction, the y-axis direction being orthogonal to the x-axis direction. | 05-24-2012 |
20120135557 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A method for producing a Group III nitride semiconductor light-emitting device includes forming a first stripe-pattern embossment on the top surface of a sapphire substrate, so that first grooves parallel to the x-axis direction (the c-axis direction of the sapphire substrate) are periodically arranged at specific intervals. Subsequently, an insulating film is formed over the entire surface of the first stripe-pattern embossment. Next, a second stripe-pattern embossment is formed so that second grooves, each having a flat bottom surface, are periodically arranged at specific intervals and parallel to the y-axis direction, which is orthogonal to the x-axis direction. A GaN crystal is grown through MOCVD on side surfaces of each second groove of the sapphire substrate, to thereby form, on the sapphire substrate, an m-plane GaN base layer. An LED device structure is formed on the base layer, to thereby produce a light-emitting device. | 05-31-2012 |
20120248407 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A Group III nitride semiconductor light-emitting device includes a light-emitting layer having a multiple quantum structure including an Al | 10-04-2012 |
20120309124 | METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present invention provides a method for producing a Group III nitride semiconductor light-emitting device whose driving voltage is reduced. In the production method, a p cladding layer has a superlattice structure in which a p-AlGaN layer having a thickness of 0.5 nm to 10 nm and an InGaN layer are alternately deposited. A growth temperature of the p-AlGaN layer is 800° C. to 950° C. The InGaN layer having a thickness of one to two monolayers is formed on the p-AlGaN layer, by stopping the supply of TMA, introducing TMI, and increasing the supply amount of Ga source gas while maintaining the p-AlGaN layer at the growth temperature. Thus, the thickness of the p cladding layer can be reduced while maintaining good crystal quality, thereby reducing the driving voltage. | 12-06-2012 |
20130015487 | SEMICONDUCTOR LIGHT-EMITTING DEVICEAANM Okuno; KojiAACI Kiyosu-shiAACO JPAAGP Okuno; Koji Kiyosu-shi JP - To improve light extraction efficiency. | 01-17-2013 |
20130059407 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREFOR - On a light-emitting layer, a p cladding layer of AlGaInN doped with Mg is formed at a temperature of 800° C. to 950° C. Subsequently, on the p cladding layer, a capping layer of undoped GaN having a thickness of 5 Å to 100 Å is formed at the same temperature as employed for a p cladding layer. Next, the temperature is increased to the growth temperature contact layer in the subsequent process. Since the capping layer is formed, and the surface of the p cladding layer is not exposed during heating, excessive doping of Mg or mixture of impurities into the p cladding layer is suppressed. The deterioration of characteristics of the p cladding layer is prevented. Then, on the capping layer, a p contact layer is formed at a temperature of 950° C. to 1100° C. | 03-07-2013 |
20130161586 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREFOR - The present invention provides a Group III nitride semiconductor light-emitting device which is intended to relax stress applied to a light-emitting layer. The light-emitting device includes an MQW layer, and an n-side superlattice layer formed below the MQW layer. The n-side superlattice layer is formed by repeatedly depositing layer units, each unit including an InGaN layer, a GaN layer, and an n-GaN layer which are sequentially deposited from the side of the sapphire substrate. In the n-side superlattice layer, an InGaN layer more proximal to the MQW layer has a higher In compositional proportion. The In compositional proportion of the InGaN layer (which is most proximal to the MQW layer) of the n-side superlattice layer is 70% to 100% of the In compositional proportion of the InGaN layer (which is most proximal to the n-side superlattice layer) of the MQW layer. | 06-27-2013 |
20130256743 | PRODUCTION METHOD FOR GROUP III NITRIDE SEMICONDUCTOR AND GROUP III NITRIDE SEMICONDUCTOR - A method for producing a Group III nitride semiconductor comprising forming mesas on a main surface of a substrate, and growing Group III nitride semiconductor in a c-axis direction thereof, wherein the plane most parallel to the side surfaces of the mesas or the dents among the low-index planes of growing Group III nitride semiconductor is a m-plane (1-100), and when a projected vector obtained by orthogonally projecting a normal vector of the processed side surface to the main surface is defined as a lateral vector, an angle between the lateral vector and a projected vector obtained by orthogonally projecting a normal vector of the m-plane of the growing Group III nitride semiconductor to the main surface is 0.5° or more and 6° or less. | 10-03-2013 |
20130260541 | METHOD FOR PRODUCING Ga-CONTAINING GROUP III NITRIDE SEMICONDUCTOR - A method for producing a Ga-containing group III nitride semiconductor having reduced threading dislocation is disclosed. A buffer layer in a polycrystal, amorphous or polycrystal/amorphous mixed state, comprising AlGaN is formed on a substrate. The substrate having the buffer layer formed thereon is heat-treated at a temperature higher than a temperature at which a single crystal of a Ga-containing group III nitride semiconductor grows on the buffer layer and at a temperature that the Ga-containing group III nitride semiconductor does not grow, to reduce crystal nucleus density of the buffer layer as compared with the density before the heat treatment. After the heat treatment, the temperature of the substrate is decreased to a temperature that the Ga-containing group III nitride semiconductor grows, the temperature is maintained, and the Ga-containing group III nitride semiconductor is grown on the buffer layer. | 10-03-2013 |
20130299778 | Group III Nitride Semiconductor Light-Emitting Device Including a Superlatice Layer - A Group III nitride semiconductor light-emitting device includes at least an n-type-layer-side cladding layer, a light-emitting layer, and a p-type-layer-side cladding layer, each of the layers being formed of a Group III nitride semiconductor. The n-type-layer-side cladding layer is a superlattice layer having a periodic structure including an In | 11-14-2013 |
20130341636 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREFOR - The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved light extraction efficiency. An AlGaN semiconductor layer is formed in contact with and on a p-GaN p-contact layer, and an ITO transparent electrode is formed in contact with and on the semiconductor layer. The semiconductor layer comprises AlGaN having an Al composition ratio of 10 mol % to 50 mol %, and has a thickness of 2 Å to 50 Å. The semiconductor layer has a refractive index at an emission wavelength lower than that of the p-contact layer, and larger than that of the transparent electrode. By forming such a semiconductor layer, the reflection is suppressed between the p-contact layer and the transparent electrode, thereby improving the light extraction efficiency. | 12-26-2013 |
20140084241 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING THE SAME - The invention provides a Group III nitride semiconductor light-emitting device in which the strain in the light-emitting layer is relaxed, thereby attaining high light emission efficiency, and a method for producing the device. The light-emitting device of the present invention has a substrate, a low-temperature buffer layer, an n-type contact layer, a first ESD layer, a second ESD layer, an n-side superlattice layer, a light-emitting layer, a p-side superlattice layer, a p-type contact layer, an n-type electrode N | 03-27-2014 |
20140084242 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present invention provides a Group III nitride semiconductor light-emitting device which exhibits improved light emission efficiency. The light-emitting layer has a MQW structure in which a plurality of layer units are repeatedly deposited, each layer unit comprising a well layer, a capping layer, and a barrier layer sequentially deposited. The well layer is formed of InGaN, the capping layer has a structure in which a GaN layer and an AlGaN layer are deposited in this order on the well layer, and the barrier layer is formed of AlGaN. The AlGaN layer has a higher Al composition ratio than that of the barrier layer. The AlGaN layer in the former portion has a lower Al composition ratio than that of the AlGaN layer in the latter portion when the light-emitting layer is divided into a former portion at the n-cladding layer side and a latter portion at the p-cladding layer side in a thickness direction. | 03-27-2014 |
20140087508 | METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present invention provides a method for producing a Group III nitride semiconductor light-emitting device wherein a p-cladding layer has a uniform Mg concentration. A p-cladding layer having a superlattice structure in which AlGaN and InGaN are alternately and repeatedly deposited is formed in two stages of the former process and the latter process where the supply amount of the Mg dopant gas is different. The supply amount of the Mg dopant gas in the latter process is half or less than that in the former process. The thickness of a first p-cladding layer formed in the former process is 60% or less than that of the p-cladding layer, and 160 Å or less. | 03-27-2014 |
20140167222 | METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR AND TEMPLATE SUBSTRATE - A semiconductor substrate includes a sapphire substrate including an a-plane main surface and a groove in a surface thereof, the groove includes side surfaces and a bottom surface, and a Group III nitride semiconductor layer formed on the sapphire substrate. Both side surfaces of the groove assume a c-plane of sapphire. An axis perpendicular to one of the side surfaces of the groove of the Group III nitride semiconductor layer assumes a c-axis of Group III nitride semiconductor. A plane parallel to the main surface of the sapphire substrate of the Group III nitride semiconductor layer assumes an m-plane of Group III nitride semiconductor. | 06-19-2014 |
20140264415 | Group III Nitride Semiconductor Light-Emitting Device and Method for Producing the Same - The present invention provides a Group III nitride semiconductor light-emitting device in which a flat semiconductor layer is grown on a sapphire substrate provided with an uneven shape, and a method for producing the same. When the area ratio R of the flat surface area S on the main surface to the total area K of the sapphire substrate is 0.1 or more to less than 0.5, in formation of the semiconductor layer on the sapphire substrate having an uneven shape on the main surface thereof, at least two types of gases: a raw material gas containing a Group III element and a raw material gas containing Group V element are supplied so as to satisfy the equation 1,000≦Y/(2×R)≦1,200. In the equation, Y is the partial pressure ratio of the raw material gas containing Group V element to the raw material gas containing Group III element. | 09-18-2014 |
20140353804 | Method for Producing Group III Nitride Semiconductor and Group III Nitride Semiconductor - A first side surface of post of the first stripe is formed so that a plane which is most parallel to the first side surface among low-index planes of the growing Group III nitride semiconductor is a m-plane (10-10), and a first angle between the first lateral vector obtained by orthogonally projecting a normal vector of the first side surfaces to the main surface and a m-axis projected vector obtained by orthogonally projecting a normal vector of the m-plane of the growing semiconductor to the main surface is from 0.5° to 6°. A second side surface of post of the second stripe is formed so that a plane which is most parallel to the second side surface among low-index planes of the growing semiconductor is an a-plane (11-20), and a second angle between the second lateral vector and an a-axis projected vector of the a-plane is from 0° to 10°. | 12-04-2014 |
Masahisa Okuno, Toyama JP
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20110233198 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A substrate processing apparatus and a substrate processing method capable of supplying uniform electromagnetic wave power and performing uniform heating are provided. The substrate processing apparatus includes a process chamber for processing a wafer, a boat installed in the process chamber to hold the wafer, a gas introduction part installed below the wafer held by the boat for introducing a gas toward a back surface of the wafer, and a waveguide port installed over the wafer held by the boat for introducing an electromagnetic wave. | 09-29-2011 |
20120129358 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device that are capable of uniformly heating a substrate while reducing an increase in substrate temperature to reduce a thermal budget. The substrate processing apparatus includes a process chamber configured to process a substrate; a substrate support unit installed in the process chamber to support the substrate; a microwave supply unit configured to supply a microwave toward a process surface of the substrate supported by the substrate support unit, the microwave supply unit including a microwave radiating unit radiating the microwave supplied from a microwave source to the process chamber while rotating; a partition installed between the microwave supply unit and the substrate support unit; a cooling unit installed at the substrate support unit; and a control unit configured to control at least the substrate support unit, the microwave supply unit and the cooling unit. | 05-24-2012 |
Masahisa Okuno, Toyama-Shi JP
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20120086107 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE - A semiconductor device manufacturing method includes loading a substrate, on which a high-k film is formed, into a processing chamber, performing a reforming process by heating the high-k film through irradiation of a microwave on the substrate, and unloading the substrate from the processing chamber. | 04-12-2012 |
20120108061 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A substrate processing apparatus includes a processing chamber configured to process a substrate having a front surface including a dielectric, a substrate support member provided within the processing chamber to support the substrate, a microwave supplying unit configured to supply a microwave to a front surface side of the substrate supported on the substrate support member; and a conductive substrate cooling unit which is provided at a rear surface side of the substrate supported on the substrate support member and has an opposing surface facing the rear surface of the substrate. A distance between the top of the substrate support member and the opposing surface of the substrate cooling unit corresponds to an odd multiple of ¼ wavelength of the microwave supplied when the substrate is processed. | 05-03-2012 |
20120108080 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A substrate processing apparatus includes a processing chamber configured to process a substrate, a substrate support member provided within the processing chamber to support the substrate, a microwave generator provided outside the processing chamber, a waveguide launch port configured to supply a microwave generated by the microwave generator into the processing chamber, wherein the central position of the waveguide launch port is deviated from the central position of the substrate supported on the substrate support member and the waveguide launch port faces a portion of a front surface of the substrate supported on the substrate support member, and a control unit configured to change a relative position of the substrate support member in a horizontal direction with respect to the waveguide launch port. | 05-03-2012 |
Masaki Okuno, Yokohama JP
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20120220094 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor manufacturing method includes exposing on a photoresist film a first partial pattern of a contact hole, overlapping a part of a gate interconnection in alignment with an alignment mark formed simultaneously with forming the gate interconnection, exposing on the photoresist film a second partial pattern, overlapping a part of an active region in alignment with an alignment mark formed simultaneously with forming the active region, developing the photoresist film to form an opening at the portion where the first partial pattern and the second partial pattern have been exposed, and etching an insulation film to form a contact hole down to the gate interconnection and the source/drain diffused layer. | 08-30-2012 |
20140179081 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor manufacturing method includes exposing on a photoresist film a first partial pattern of a contact hole, overlapping a part of a gate interconnection in alignment with an alignment mark formed simultaneously with forming the gate interconnection, exposing on the photoresist film a second partial pattern, overlapping a part of an active region in alignment with an alignment mark formed simultaneously with forming the active region, developing the photoresist film to form an opening at the portion where the first partial pattern and the second partial pattern have been exposed, and etching an insulation film to form a contact hole down to the gate interconnection and the source/drain diffused layer. | 06-26-2014 |
Masaki Okuno, Kawasaki JP
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20090309141 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A disclosed semiconductor device includes multiple gate electrodes disposed on a semiconductor substrate; and multiple sidewall spacers disposed on sidewalls of the gate electrodes. The thickness of the sidewall spacers is larger on the sidewalls along longer sides of the gate electrodes than on the sidewalls along shorter sides of the gate electrodes. | 12-17-2009 |
20130292749 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor device includes a gate electrode formed over a semiconductor substrate, and a sidewall spacer formed on a sidewall of the gate electrode. The sidewall spacer formed along the sidewall parallel to a gate length direction of the gate electrode has a first thickness, and the sidewall spacer formed along the sidewall parallel to a gate width direction of the gate electrode has a second thickness that is greater than the first thickness. | 11-07-2013 |
Masaki Okuno, Kawasaki-Shi JP
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20120043613 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A disclosed semiconductor device includes multiple gate electrodes disposed on a semiconductor substrate; and multiple sidewall spacers disposed on sidewalls of the gate electrodes. The thickness of the sidewall spacers is larger on the sidewalls along longer sides of the gate electrodes than on the sidewalls along shorter sides of the gate electrodes. | 02-23-2012 |
Masanori Okuno, Toyama-Shi JP
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20100080671 | SETUP METHOD OF SUBSTRATE PROCESSING APPARATUS - A setup method of a substrate processing apparatus comprises: connecting a test terminal, which includes a pseudo comprehensive control unit and a second operation unit, to a plurality of process furnace control units, with the process furnace control units being separated from the comprehensive control unit and a first operation unit; transmitting a process furnace test operation command from the second operation unit to the plurality of process furnace control units through the pseudo comprehensive control unit; testing operations of a plurality of process furnaces in parallel by the plurality of process furnace control units receiving the process furnace test operation command; and transmitting a process furnace test operation report from the plurality of process furnace control units to the second operation unit through the pseudo comprehensive control unit. | 04-01-2010 |
20130018501 | TEST TERMINAL AND SETUP SYSTEM INCLUDING THE SAME OF SUBSTRATE PROCESSING APPARATUS - A setup system at least including a substrate processing apparatus and a test terminal is provided. The substrate processing apparatus includes a plurality of process chambers, a plurality of process chamber control units, a comprehensive control unit and an operation unit. The test terminal is connected to the plurality of process chamber control units while the comprehensive control unit and the operation unit are disconnected from the plurality of process chamber control units. The test terminal transmits a process chamber test operation command to the plurality of process chamber control units by executing a test terminal program. The setup system is capable of reducing time necessary for a setup process when starting to operate the substrate processing apparatus with the plurality of process chambers. | 01-17-2013 |
20140176701 | SUBSTRATE PROCESSING DEVICE - Image data pertaining to substrate transfer is efficiently collected and stored for use in analyzing transfer errors. A substrate processing device includes a first control part for stopping a transfer part upon detecting a transfer error in the transfer part for transferring a substrate; a storage part for storing substrate transfer operations of the transfer part as image data; and a second control part for accumulating the image data in an accumulation part at a predetermined period. The first control part obtains information indicating a state of the substrate from the transfer part or a processing part, and notifies the second control part that the transfer part is stopped due to the transfer error. The second control part retrieves image data of a predetermined period of time including the time that the transfer error occurs from the accumulation part, and converts the image data into a file. | 06-26-2014 |
Masayuki Okuno, Kanagawa-Ken JP
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20110064355 | WAVEGUIDE DEVICE AND MODULE - Excess optical power in a waveguide device is appropriately terminated. According to one embodiment of the present invention, the waveguide device comprises a termination structure filled with a light blocking material for terminating light from the end section of a waveguide. This termination structure can be formed by forming a groove on an optical waveguide by removing the clad and core, and filling the inside of that groove with a material attenuating the intensity of the light (light blocking material). In this manner, light that enters into the termination structure is attenuated by the light blocking material, and influence on other optical devices as a crosstalk component can be suppressed. With such termination structure, not only the influence on optical devices integrated on the same substrate, but also the influence on other optical devices directly connected to that substrate can be suppressed. | 03-17-2011 |
Mitsuhiro Okuno, Otsu JP
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20100210661 | STAT3/5 ACTIVATION INHIBITOR - An object of the present invention is to provide a STAT3/5 activation inhibitor. The present invention provides a STAT3/5 activation inhibitor containing an aromatic compound represented by the general formula or a salt thereof as an active ingredient: | 08-19-2010 |
20120238750 | AROMATIC COMPOUND - The compound of the present invention is represented by the following general formula (1): | 09-20-2012 |
20120322807 | STAT3/5 ACTIVATION INHIBITOR - The present invention provides a STAT3/5 activation inhibitor containing an aromatic compound represented by the general formula or a salt thereof as an active ingredient: | 12-20-2012 |
Motoharu Okuno, Kyoto JP
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20110193125 | ADHESION METHOD, ADHESION STRUCTURE, METHOD OF MANUFACTURING OPTICAL MODULE, AND OPTICAL MODULE - A first light-blocking member and a second light-blocking member are adhered to each other by forming a light-transmitting layer having a light-transmitting composition serving as a base material and a light-transmitting filler different in index of refraction from this light-transmitting composition on a front surface of the first light-blocking member. A liquid light curing adhesive is applied to a front surface of the light-transmitting layer. The second light-blocking member is arranged on the front surface of the light-transmitting layer to which the liquid light curing adhesive has been applied. The liquid light curing adhesive is cured by irradiating the light-transmitting layer with light having a prescribed wavelength laterally from a side of the light-transmitting layer so as to adhere the light-transmitting layer and the second light-blocking member to each other. By adhering light-blocking members to each other, an adhesion operation may easily and quickly be performed with sufficient adhesion strength. | 08-11-2011 |
20110199781 | LIGHT PROJECTOR AND SENSOR - A light projector has a light emitting device having a light emitting surface, an optical fiber having an incident end-face to which light emitted from the light emitting surface enters, and a lens arranged between the light emitting surface of the light emitting device and the incident end-face of the optical fiber. The light emitting device, the optical fiber and the lens are arranged on one optical axis. The optical fiber includes a core region as a region including a single core of uniform refractive index or a region collectively encompassing a plurality of cores having uniform refractive index. The lens converts diffused light emitted from the light emitting surface to diffused light that widens more moderately. | 08-18-2011 |
20140198519 | LIGHT PROJECTOR AND SENSOR - A light projector has a light emitting device having a light emitting surface, an optical fiber having an incident end-face to which light emitted from the light emitting surface enters, and a lens arranged between the light emitting surface of the light emitting device and the incident end-face of the optical fiber. The light emitting device, the optical fiber and the lens are arranged on one optical axis. The optical fiber includes a core region as a region including a single core of uniform refractive index or a region collectively encompassing a plurality of cores having uniform refractive index. The lens converts diffused light emitted from the light emitting surface to diffused light that widens more moderately. | 07-17-2014 |
Naoki Okuno, Sagamihara JP
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20100062586 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - It is an object to provide a homogeneous semiconductor film in which variation in the size of crystal grains is reduced. Alternatively, it is an object to provide a homogeneous semiconductor film and to achieve cost reduction. By introducing a glass substrate over which an amorphous semiconductor film is formed into a treatment atmosphere set at more than or equal to a temperature that is needed for crystallization, rapid heating due to heat conduction from the treatment atmosphere is performed so that the amorphous semiconductor film is crystallized. More specifically, for example, after the temperature of the treatment atmosphere is increased in advance to a temperature that is needed for crystallization, the substrate over which the semiconductor film is formed is put into the treatment atmosphere. | 03-11-2010 |
20100081251 | METHOD FOR MANUFACTURING SOI SUBSTRATE - A single crystal semiconductor substrate is irradiated with accelerated ions to form an embrittled region in the single crystal semiconductor substrate. The single crystal semiconductor substrate and a base substrate are bonded to each other with an insulating layer interposed therebetween. The single crystal semiconductor substrate is separated at the embrittled region to form a semiconductor layer over the base substrate. Heat treatment is performed to reduce defects in the semiconductor layer. The semiconductor layer is then irradiated with laser light. | 04-01-2010 |
20100120224 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object is to provide a method for manufacturing an SOI substrate including a single crystal silicon film whose plane orientation is (100) and a single crystal silicon film whose plane orientation is (110) with high yield. A first single crystal silicon substrate whose plane orientation is (100) is doped with first ions to form a first embrittlement layer. A second single crystal silicon substrate whose plane orientation is (110) is doped with second ions to selectively form a second embrittlement layer. Only part of the first single crystal silicon substrate is separated along the first embrittlement layer by first heat treatment, thereby forming a first single crystal silicon film. A region of the second single crystal silicon substrate, in which the second embrittlement layer is not formed, is removed. Part of the second single crystal silicon substrate is separated along the second embrittlement layer by second heat treatment, thereby forming a second single crystal silicon film. | 05-13-2010 |
20100291752 | METHOD FOR MANUFACTURING SOI SUBSTRATE AND SOI SUBSTRATE - A method is demonstrated to form an SOI substrate having a silicon layer with reduced surface roughness in a high yield. The method includes the step of bonding a base substrate such as a glass substrate and a bond substrate such as a single crystal semiconductor substrate to each other, where a region in which bonding of the base substrate with the bond substrate cannot be performed is provided at the interface therebetween. Specifically, the method is exemplified by the combination of: irradiating the bond substrate with accelerated ions; forming an insulating layer over the bond substrate; forming a region in which bonding cannot be performed in part of the surface of the bond substrate; bonding the bond substrate and the base substrate to each other with the insulating layer therebetween; and separating the bond substrate from the base substrate, leaving a semiconductor layer over the base substrate. | 11-18-2010 |
20100330779 | METHOD FOR MANUFACTURING SOI SUBSTRATE AND SOI SUBSTRATE - A bond substrate is irradiated with accelerated ions to form an embrittled region in the bond substrate; an insulating layer is formed over a surface of the bond substrate or a base substrate; the bond substrate and the base substrate are bonded to each other with the insulating layer interposed therebetween; a region in which the bond substrate and the base substrate are not bonded to each other and which is closed by the bond substrate and the base substrate is formed in parts of the bond substrate and the base substrate; the bond substrate is separated at the embrittled region by heat treatment; and a semiconductor layer is formed over the base substrate. | 12-30-2010 |
20110092050 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A first embrittlement layer is formed by doping a first single-crystal semiconductor substrate with a first ion; a second embrittlement layer is formed by doping a second single-crystal semiconductor substrate with a second ion; the first and second single-crystal semiconductor substrates are bonded to each other; the first single-crystal semiconductor film is formed over the second single-crystal semiconductor substrate by a first heat treatment; an insulating substrate is bonded over the first single-crystal semiconductor film; and the first and second single-crystal semiconductor films are formed over the insulating substrate by a second heat treatment. A dose of the first ion is higher than that of the second ion and a temperature of the first heat treatment is lower than that of the second heat treatment. | 04-21-2011 |
20110124179 | SOI SUBSTRATE AND MANUFACTURING METHOD THEREOF - The semiconductor substrate provided with a groove portion is irradiated with ions so that an embrittled region is formed in the semiconductor substrate, the semiconductor substrate and a base substrate are bonded to each other with an insulating layer interposed therebetween and a space which is surrounded by the groove portion in the semiconductor substrate and the base substrate is formed, and heat treatment is performed to separate the semiconductor substrate at the embrittled region, so that the semiconductor layer is formed over the base substrate with the insulating layer interposed therebetween. | 05-26-2011 |
20110186958 | SOI SUBSTRATE AND MANUFACTURING METHOD THEREOF - A bond substrate is irradiated with ions, so that an embrittlement layer is formed, then, the bond substrate is bonded to a base substrate. Next, a part of a region of the bonded bond substrate is heated at a temperature higher than a temperature of the other part of the region of the bond substrate, or alternatively, a first heat treatment is performed on the bonded bond substrate as a whole at a first temperature; and a second heat treatment is performed on a part of a region of the bonded bond substrate at a second temperature higher than the first temperature, so that separation of the bond substrate proceeds from the part of the region of the bond substrate to the other part of the region of the bond substrate in the embrittlement layer. Accordingly, a semiconductor layer is formed over the base substrate. | 08-04-2011 |
20120012986 | METHOD FOR MANUFACTURING SOI SUBSTRATE AND SOI SUBSTRATE - A method is demonstrated to form an SOI substrate having a silicon layer with reduced surface roughness in a high yield. The method includes the step of bonding a base substrate such as a glass substrate and a bond substrate such as a single crystal semiconductor substrate to each other, where a region in which bonding of the base substrate with the bond substrate cannot be performed is provided at the interface therebetween. Specifically, the method is exemplified by the combination of: irradiating the bond substrate with accelerated ions; forming an insulating layer over the bond substrate; forming a region in which bonding cannot be performed in part of the surface of the bond substrate; bonding the bond substrate and the base substrate to each other with the insulating layer therebetween; and separating the bond substrate from the base substrate, leaving a semiconductor layer over the base substrate. | 01-19-2012 |
Naoyuki Okuno, Tsuchiura-Shi JP
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20090252549 | Spline Connection Structure - A spline connection structure is provided with a shaft spline and a bore spline. The shaft spline is comprised of plural involute teeth formed on a shaft, while the bore spline is comprised of plural involute teeth formed on a hub and maintained in engagement with the teeth of the shaft spline. The hub is provided with at least one cylindrical hole and a thin wall portion facing a lower end portion of the cylindrical hole. The thin wall portion is pressed by a pressing member inserted in the cylindrical hole to widen an interval between at least two of the teeth of the bore spline, said at least two teeth being located in a vicinity of the thin wall portion, such that at least one of the at least two teeth is pressed against at least one associated tooth of the teeth of the shaft spline and is restrained to restrict movement of the hub relative to the shaft. At least one tooth of at least one of the shaft spline and bore spline, said at least one tooth being located in a vicinity of the thin wall portion, is provided with a cutout portion formed by cutting off the at least one tooth at a part thereof such that the cutout portion is located in a neighborhood of an end face of the hub located on a side opposite another end face of the hub located on a side of an end portion of the shaft. | 10-08-2009 |
Shigeki Okuno, Kobe-Shi JP
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20100203994 | FRICTION DRIVE BELT AND AUTOMOTIVE ACCESSORY DRIVE BELT TRANSMISSION SYSTEM USING THE SAME - A friction drive belt (B) includes short fibers ( | 08-12-2010 |
20110124453 | POWER TRANSMISSION BELT - A power transmission belt ( | 05-26-2011 |
Shigeki Okuno, Hyogo JP
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20090011884 | Transmission Belt - The invention provides a transmission belt that can suppress lowering in transmission efficiency and has improved durability. A rubber layer adhered to core wires is formed to have a durometer hardness (shore A) of not less than 72 and not more than 85, or have a tensile stress of not less than 0.5 MPa and not more than 1.7 MPa when stretched 10% in the belt longitudinal direction at 25° C., and the rubber layer is formed to have a weight increase of 90% or less after immersed in light oil for 48 hours at 25° C. or have a weight increase of 80% or less after immersed in toluene for 48 hours at 25° C. Alternatively, the rubber layer adhered to the core wires is formed to have a storage modulus of not less than 10 MPa and not more than 50 MPa and a tan δ of not more than 0.15 as measured by dynamic viscoelasticity measurement under conditions at a static load of 3 kgf/cm | 01-08-2009 |
20110218069 | FRICTION DRIVE BELT - A friction drive belt includes: an adhesion rubber layer having a core wire embedded therein so as to form a helical pattern having a pitch in a lateral direction of the belt; a compression rubber layer provided on a surface of the adhesion rubber layer located on an inner side of the belt, and serving as a portion that is to contact pulleys, and a backing rubber layer provided on a surface of the adhesion rubber layer located on an outer side of the belt, and serving as a back portion of the belt. A ratio of tensile stress at 10% elongation of a rubber composition forming the adhesion rubber layer to that of a rubber composition forming the backing rubber layer is 1.77 or more, as measured in a longitudinal direction of the belt at an ambient temperature of 25° C. according to JIS K 6251. | 09-08-2011 |
Shigeo Okuno, Toyama JP
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20080259522 | Metalized Film Capacitor and Inverter Smoothing Capacitor for Automobile - A metalized film capacitor includes a metal deposition electrode on a dielectric film. The metal deposition electrode includes slits provided and divided only at a side opposite to low resistance portions connected to a metalized contact, and fuses provided between the slits. In a laminated metalized film, slits provided at a central portion in a width direction of the metalized deposition electrode and extending in the longitudinal direction of the dielectric film do not overlap with each other. | 10-23-2008 |
20100202095 | CASE MOLD TYPE CAPACITOR AND METHOD FOR MANUFACTURING THE SAME - The case mold type capacitor has a capacitor element, a pair of terminals, and molding resin. Each terminal of the pair is connected to a first electrode and a second electrode of the capacitor element, respectively. The capacitor element is embedded in the molding resin in a manner that a terminal section disposed at an end of each of terminals are partially exposed to outside. The molding resin has epoxy resin containing inorganic filler and a moisture absorbent mixed in the epoxy resin. | 08-12-2010 |
Shinichi Okuno, Hirakata City JP
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20080218037 | Holding structure and projection display device - A member to be held is held in an external cabinet having a combination of a first cabinet and a second cabinet. A first supporting section is provided in the first cabinet and a second supporting section is provided in the second cabinet. A section to be sandwiched is provided in the member to be held, and the member to be held is held in the external cabinet by sandwiching this section to be sandwiched by the first supporting section and the second supporting section. | 09-11-2008 |
20080218706 | Projection display device - A projection display device comprises a projection lens section to which light modulated by a light modulating element is entered, a mirror section for reflecting the light emitted from the projection lens section to reflect to the projection lens section side and directing the light to a projection plane, and an operation section for displacing a lens in the projection lens section. The operation section is disposed in a region in which the operation section does not hinder an optical path of the light that has been passed through a projection port provided in a main body cabinet. | 09-11-2008 |
20090153809 | PROJECTION OPTICAL SYSTEM AND PROJECTION DISPLAY DEVICE - A projection optical system includes a first refracting optical system having a plurality of lenses, a first reflecting optical system, and a second reflecting optical system. The first reflecting optical system is disposed on a side of a projection port with respect to an optical axis of the first refracting optical system, and has a positive optical power to reflect light incident through the first refracting optical system in a direction opposite to the side of the projection port. The second reflecting optical system is operable to reflect the light reflected on the first reflecting optical system toward the projection port. | 06-18-2009 |
20120281188 | PROJECTION DISPLAY DEVICE HAVING AN OPERATION SECTION FOR DISPLACING A LENS - A projection display device comprises a projection lens section to which light modulated by a light modulating element is entered, a mirror section for reflecting the light emitted from the projection lens section to reflect to the projection lens section side and directing the light to a projection plane, and an operation section for displacing a lens in the projection lens section. The operation section is disposed in a region in which the operation section does not hinder an optical path of the light that has been passed through a projection port provided in a main body cabinet. | 11-08-2012 |
Takahiro Okuno, Kuwana-Shi JP
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20120180589 | POWER TRANSMISSION PART - A power transmission part is made of a sintered material obtained by press molding and firing granulated powder obtained by granulating raw material powder having iron as a main component. The sintered material can thereby be increased in density by a powder press sintering method. A power transmission part of high strength and high rigidity can thereby be obtained. | 07-19-2012 |
20130004112 | CAGE AND ROLLING BEARING - A cage is made of a magnesium alloy such as AZ91D, and is molded by means of injection molding. In this cage, a confluence region is brought away to outside the cage during the injection molding. The confluence region is a region including a void formed by merging of flows of the magnesium alloy. When observing a cross sectional surface of the cage, a ratio of an α phase having a grain size of 20 μm or greater is less than 15% in the magnesium alloy constituting the cage. | 01-03-2013 |
20140038732 | CONSTANT VELOCITY UNIVERSAL JOINT - A constant-velocity universal joint includes an outer joint member; an inner joint member arranged in an inside of the outer joint member; and torque transmitting members. At least one of the outer joint member and the inner joint member comprises track grooves that are engaged with rolling surfaces of the torque transmitting members. At least one of the components of the constant-velocity universal joint is formed of a metal sintered compact. The metal sintered compact has a relative density of 80% or more and less than 100%. The metal sintered compact comprises a hardened layer formed on a surface thereof through heat treatment. Among the components each formed of the metal sintered compact, a component having a ring shape is subjected to a cold rolling process. | 02-06-2014 |
20150033894 | MECHANICAL STRUCTURE COMPONENT, SINTERED GEAR, AND METHODS OF MANUFACTURING MECHANICAL STRUCTURE COMPONENT AND SINTERED GEAR - A sintered gear serving as a mechanical structure component is a mechanical structure component made of a metal sintered body, and includes a base region; and a high density region formed so as to include a maximum stress position at which a maximum tensile stress or a maximum shear stress is applied, and to include a surface, in which the high density region is lower in porosity than the base region. A surface hardened layer is formed in a region including the surface by performing a hardening process. | 02-05-2015 |
Takashi Okuno, Wakayama-Shi JP
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20100266822 | PROCESS FOR PREPARING BLACK TONER FOR ELECTROPHOTOGRAPHY - A process for preparing a black toner for electrophotography, including the steps of (I) melt-kneading a raw material mixture containing a resin binder and a black colorant with an open-roller type kneader; (II) cooling the melt-kneaded mixture obtained in the step (I) and pulverizing the cooled mixture; and (III) classifying the pulverized product obtained in the step (II), wherein the resulting toner has a volume-median particle size (D | 10-21-2010 |
Takashi Okuno, Minato-Ku JP
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20120258354 | PACKAGING FOR ELECTROCHEMICAL DEVICE, AND ELECTROCHEMICAL DEVICE - Disclosed are a packaging for an electrochemical device such as a battery, and an electrochemical device using the packaging; the packaging being usable even under a severe condition such as a high temperature or a low temperature. The electrochemical device is produced by hermetically housing electrochemical device element | 10-11-2012 |
Takayoshi Okuno, Gunma JP
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20110221464 | CONTACT PROBE AND SOCKET, AND MANUFACTURING METHOD OF TUBE PLUNGER AND CONTACT PROBE - A contact probe has a tubular plunger which is not made by press working and rounding so that quality control of gold plating or the like is not necessary or not difficult. The tubular plunger is made of a metal tube with a tip that has a reduced outside diameter and notches spaced from the tip. The tip is bent inside the tube and an outer surface of the metal tube, from a bent part to a bottom side, with a small diameter defining a convex part having a larger diameter. The small diameter part of the metal tube is cut off at the end of the small diameter. | 09-15-2011 |
Takayuki Okuno, Osaka-Shi JP
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20100267945 | AMINE DERIVATIVE HAVING NPY Y5 RECEPTOR ANTAGONISTIC ACTIVITY - A compound of the formula (I): | 10-21-2010 |
20100273842 | AMINE DERIVATIVES HAVING NPY Y5 RECEPTOR ANTAGONISTIC ACTIVITY AND THE USES THEREOF - This invention provides an anorectic or anti-obesity composition comprising a compound of the formula (I): | 10-28-2010 |
Takayuki Okuno, Osaka-Fu JP
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20100063027 | Amine Derivative Having NPY Y5 Receptor Antagonistic Activity - This invention provides a compound of the formula (I): | 03-11-2010 |
Takeshi Okuno, Yokohama-Shi JP
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20130093736 | ELECTRO-OPTIC DEVICE AND DRIVING METHOD OF ELECTRO-OPTIC DEVICE - The electro-optic device includes a plurality of data lines, a plurality of scan lines, a plurality of pixel areas arranged at crossings of the data lines and the scan lines, and light emitting elements, wherein first pixel areas are in alternating columns, each first pixel area including only one pixel circuit configured to cause the light emitting elements to emit light, wherein second pixel areas are in alternating columns between the first pixel areas, each second pixel area including two pixel circuits configured to cause the light emitting elements to emit light, and wherein a writing process is performed on the second pixel areas to cause light emitting elements on the pixel circuits on one side to emit light in a period for causing light emitting elements on the pixel circuits on the other side to emit light. | 04-18-2013 |
20130113690 | METHOD OF DRIVING ELECTRO-OPTIC DEVICE AND ELECTRO-OPTIC DEVICE - A driving method of an electro-optic device is capable of sufficiently providing a threshold voltage compensation time of a driving transistor and a data writing time. A driving method of an electro-optic device including a first power source, a second power source, data lines, scan lines, signal lines, and pixel circuits, includes: a first step in which a light emitting element is in a non-light-emitting state, and a second transistor is turned on by a change of a pulse applied to a signal line; and a second step in which the scan line is sequentially and exclusively selected after the second transistor is turned on, a third transistor including a gate connected to a selected scan line is turned on, and a corresponding data voltage is written to a first node from the data line through the third transistor. | 05-09-2013 |
Takeshi Okuno, Tsurumi-Ku JP
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20110205196 | GATE SELECTION CIRCUIT OF LIQUID CRYSTAL PANEL, ACCUMULATING CAPACITY DRIVING CIRCUIT, DRIVING DEVICE, AND DRIVING METHOD - The present invention relates to the circuit size of a gate selection circuit of an active matrix liquid crystal panel. A plurality of clock signals are generated by a clock generation circuit, a shift register is formed by a plurality of latch circuits, and hold information is shifted in synchronization with enable clock signals. In a switch circuit, a plurality of clock signals are sequentially outputted as gate selection signals according to each output signal of the latch circuits. A driving method and a driving apparatus of the gate selection circuit are also disclosed. | 08-25-2011 |
Takuya Okuno, Itami-Shi JP
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20120144753 | CEMENTED CARBIDE AND CUTTING TOOL USING SAME - There are provided a cemented carbide high in thermal diffusivity and excellent in wear resistance, and a cutting tool including a base material formed of this cemented carbide. The cemented carbide is a WC based cemented carbide in which a hard phase mainly constituted of WC grains is bound by a binder phase mainly constituted of Co, and is used for a cutting tool. The binder phase is substantially constituted of Co, or Co and Ni. A total content of Co and Ni is not less than 4.5 mass % and not more than 15 mass %. In this cemented carbide, the WC grains have an average diameter of not less than 0.4 μm and not more than 4 μm. | 06-14-2012 |
20120328506 | METHOD FOR PRODUCING AMMONIUM TUNGSTATE AQUEOUS SOLUTION - A method for producing an ammonium tungstate aqueous solution includes the steps of: adding sulfuric acid to a solution containing tungstate ions; bringing the solution having the sulfuric acid added therein, into contact with an anion exchange resin; and bringing the anion exchange resin into contact with an aqueous solution containing ammonium ions. | 12-27-2012 |
Tokujiro Okuno, Matsumoto-Shi JP
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20090212495 | RECORDING APPARATUS - A recording apparatus includes a recording head, a transport driving roller, and a transport driven roller. The recording head discharges ink onto a transported recording medium, thereby performing recording. The transport driving roller is provided on the upstream side of the recording head in the transport direction and includes driving side roller portions and depressed portions. The driving side roller portions are rotationally driven, thereby transporting the recording medium. The diameter of the depressed portions is smaller than that of the driving side roller portions. The driving side roller portions and the depressed portions are arranged in a direction perpendicular to the transport direction of the recording medium in such a manner that at least one driving side roller portion alternates with at least one depressed portion. The transport driven roller is provided opposite the transport driving roller and includes driven side roller portions and presser rollers. | 08-27-2009 |
20090237480 | FLUID EJECTING APPARATUS - A fluid ejecting apparatus includes a supporting member that supports a fluid ejection target medium; a fluid ejecting head that is provided opposite to the supporting member so as to eject fluid toward the supporting member; and a medium ejecting unit that ejects the medium in a first direction while holding the medium in such a manner that the medium is supported by the supporting member. The medium ejecting unit includes a driving roller that is provided at the supporting-member side and is in contact with the medium from the supporting-member side when the medium ejecting unit holds the medium, and a driven roller that is provided at the fluid-ejecting-head side and is in contact with the medium from the fluid-ejecting-head side when the medium ejecting unit holds the medium. | 09-24-2009 |
20120218361 | RECORDING APPARATUS - A recording apparatus includes: a plurality of first ribs provided at predetermined intervals in a direction intersecting with a direction along which a recording target medium is transported; a plurality of second ribs provided at predetermined intervals in the direction intersecting with the direction along which the recording target medium is transported, the plurality of second ribs being provided downstream of the plurality of first ribs for guiding the recording target medium to a downstream side, the plurality of second ribs being provided at an area where the plurality of second ribs can face the recording head; a first member that is made of a resin material that is used as a material of the plurality of first ribs; and a second member that is made of a metal material that is used as a material of the plurality of second ribs. | 08-30-2012 |
20120299992 | PRINTING APPARATUS AND PRINTING METHOD - In a transport for reversing a front and a back of a paper so as to print the back of a printing paper after printing the front of the printing paper, an attachment amount of ink to the front of the printing paper is determined for each region of the front, and on the path of the transport, in a predetermined position where the warpage of the opposite direction to the warpage of the swelling curl of the printing medium generated by the attachment of ink to the front of the printing paper is generated in a site of the printing paper having a region in which the amount of ink attachment is determined to be equal to or greater than a predetermined value, the transport of the printing medium waits for a predetermined time. | 11-29-2012 |
Tokujiro Okuno, Nagano-Ken JP
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20080291252 | INK CARTRIDGE ATTACHMENT/DETACHMENT DEVICE, RECORDING APPARATUS, LIQUID EJECTION APPARATUS, AND LIQUID CONTAINER - A liquid container for a liquid ejection apparatus includes: a case having a liquid containing portion in its interior; a supply portion which is formed on a first side wall of the case, and through which a liquid in the liquid containing portion can flow to an exterior; a contact portion, which can contact a part of a slider of the liquid ejection apparatus to move the slider in a direction in which the liquid container is inserted; and an engagement portion, which is configured to engage a lock portion of the slider. The contact portion and the engagement portion are formed on a second side wall of the case, the second side wall intersecting the first side wall. | 11-27-2008 |
Tomokazu Okuno, Toyota JP
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20120167661 | I-Beam Wear Assessment Trolleys And Methods For Using The Same - I-beam wear assessment trolleys include a first sensor assembly including a first upper block, a first lower block, a first pressure sensor positioned between the first upper block and the first lower block, and at least one first biasing member positioned between the first pressure sensor and either the first upper block or the first lower block of the first sensor assembly, wherein the at least one first biasing member biases the first upper block and the first lower block of the first sensor assembly away from one another. | 07-05-2012 |
Tomoya Okuno, Nishio-Shi JP
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20090072794 | Apparatus for charging on-vehicle battery and apparatus for controlling generating operation of on-vehicle generator - An on-vehicle charging apparatus charges a battery mounted on the vehicle. In the apparatus, a generator generates electric power to output voltage for charging the battery and a controller, which is located outside the generator, outputs a pulse signal for controlling a generated state of the generator. A reception device receives the pulse signal outputted from the controller. The received signal is subjected to filtering at a filter, where pulse signals whose cycles are different from a predetermined cycle are removed. Further, using the outputted pulse signal from the filter, a duty ratio of the pulse signal is calculated. A voltage outputted from the generator is regulated based on the calculated duty ratio. | 03-19-2009 |
Tomoya Okuno, Kasugai-Shi JP
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20100288740 | LASER PROCESSING APPARATUS AND LASER PROCESSING METHOD - A laser processing apparatus comprises a first shift mechanism including a first transparent member having a first incident face and a first output face that are parallel to each other; and a first motor that rotates the first transparent member around a first rotational axis. The first shift mechanism shifts the laser beam exiting from the first output face in a state parallel with the incident light on the first incident face in a first direction. The laser processing apparatus also comprises a second shift mechanism including a second transparent member including a second incident face and a second output face that are parallel to each other; and a second motor that rotates the second transparent member around the second rotational axis. The second rotating mechanism rotates the laser beam exiting from the second output face in a state parallel with the laser beam incident on the second incident face in a second direction perpendicular to the first direction. A light collecting lens collects the laser beam shifted with the second shift section to process a work. This configuration allows control of a taper angle of a hole formed by laser processing. | 11-18-2010 |
Yasuhiro Okuno, Kawasaki-Shi JP
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20110279694 | COMMUNICATION METHOD AND APPARATUS, SERVER AND CLIENT ON NETWORK, AND PROGRAM CODES REALIZING COMMUNICATION THEREOF - An end user is provided with an environment to easily remote-control a video camera via a general network such as the Internet. For this purpose, on a client side, the content of camera control is described in file-transfer protocol description, and the description is transferred to a camera server on the Internet via a browser. The camera server interprets the description, controls a camera in accordance with the designated content, to perform image sensing, and returns the obtained video image as the content of a file to the client. The client performs various controls while observing the video image. When a desired angle has been found, the client instructs to register the angle in a bookmark, then angle information displayed at that time is registered. Thereafter, when the user of the client can see the video image obtained on the same image-sensing conditions by merely select-designating the angle information registered in the bookmark. | 11-17-2011 |
Yasushi Okuno, Kyoto JP
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20100099891 | ESTIMATION OF PROTEIN-COMPOUND INTERACTION AND RATIONAL DESIGN OF COMPOUND LIBRARY BASED ON CHEMICAL GENOMIC INFORMATION - A data processing method for an estimation of compound-protein interaction using both chemical substance information, such as a chemical property of the compound, and biological information, such as sequence information of genes to rationally and efficiently screen compounds. First space representing space coordinates of a first chemical substance group and second space representing space coordinates of a second chemical substance group are defined, and the first chemical substance group is characterized by a first characteristic amount and the second chemical substance group is characterized by a second characteristic amount, and map transformation of the coordinates of the first space and the coordinates of the second space results in the solution so as to increase the correlation between the first space and the second space using a multivariable analysis technique or a machine learning method. | 04-22-2010 |
Yasutoshi Okuno, Soraku-Gun JP
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20130075833 | MULTI-LAYER SCAVENGING METAL GATE STACK FOR ULTRA-THIN INTERFACIAL DIELCTRIC LAYER - A multi-layer scavenging metal gate stack, and methods of manufacturing the same, are disclosed. In an example, a gate stack disposed over a semiconductor substrate includes an interfacial dielectric layer disposed over the semiconductor substrate, a high-k dielectric layer disposed over the interfacial dielectric layer, a first conductive layer disposed over the high-k dielectric layer, and a second conductive layer disposed over the first conductive layer. The first conductive layer includes a first metal layer disposed over the high-k dielectric layer, a second metal layer disposed over the first metal layer, and a third metal layer disposed over the second metal layer. The first metal layer includes a material that scavenges oxygen impurities from the interfacial dielectric layer, and the second metal layer includes a material that adsorbs oxygen impurities from the third metal layer and prevents oxygen impurities from diffusing into the first metal layer. | 03-28-2013 |
20140175513 | Structure And Method For Integrated Devices On Different Substartes With Interfacial Engineering - The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a first semiconductor material and a first reactivity; and a low reactivity capping layer of disposed on the semiconductor substrate, wherein the low reactivity capping layer includes a second semiconductor material and a second reactivity less than the first reactivity, the low reactivity capping layer includes silicon germanium Si | 06-26-2014 |
Yasuyuki Okuno, Amagasaki-Shi JP
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20100243552 | MEMBRANE CARTRIDGE IN IMMERSION TYPE MEMBRANE SEPARATION APPARATUS - [Problem] To present a membrane cartridge in an immersion type membrane separation apparatus capable of suppressing vibrations applied to the membrane cartridge by an ascending force of membrane cleaning gas and others by firmly coupling the adjacent membrane cartridges disposed in parallel. | 09-30-2010 |
20100243555 | MEMBRANE ELEMENT IN IMMERSION TYPE MEMBRANE SEPARATION APPARATUS - [Problem] To present a membrane element in an immersion type membrane separation apparatus capable of filtering efficiently by holding a uniform filtering capacity on the whole of the membrane surface if clogging occurs in a part of the membrane surface. | 09-30-2010 |
Yoshihiro Okuno, Kariya-Shi JP
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20100117306 | CYLINDER HEAD GASKET AND ENGINE - The thickness of an intermediate plate portion ( | 05-13-2010 |
Yoshikazu Okuno, Chiyoda-Ku JP
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20120178630 | TAPE BASE MATERIAL FOR A SUPERCONDUCTING WIRE ROD, AND SUPERCONDUCTING WIRE ROD - Provided is a superconducting wire rod that is reduced in cost due to a thinner/simpler middle layer, without the properties of the superconducting wire rod (for example critical current properties) being negatively affected. A provided tape-shaped base material for superconducting wire rods comprises a diffusion preventing layer, which comprises an oxide of a group 4 (4A) element, formed on a substrate that contains iron, nickel, or chromium. Specifically, the diffusion preventing layer comprises TiO | 07-12-2012 |
Yoshinobu Okuno, Kagawa JP
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20110319600 | Human Anti-Human Influenza Virus Antibody - Provided is a human antibody having a neutralization activity against a human influenza virus. More specifically, provided is a human antibody which recognizes a highly conserved region in a human influenza A virus subtype H3N2 or a human influenza B virus and has a neutralization activity against the virus. The human antibody is a human anti-human influenza virus antibody, which has a neutralization activity against a human influenza A virus subtype H3N2 and binds to a hemagglutinin HA1 region of the human influenza A virus subtype H3N2, or which has a neutralization activity against a human influenza B virus, and includes, as a base sequence of a DNA encoding a variable region of the antibody, a sequence set forth in any one of SEQ ID NOS: 5 to 12. | 12-29-2011 |
20120156242 | An Antigenic Peptide Derived From Influenza Virus And A Method For Selecting Anti-Influenza Virus Antibody - Antigenic peptides are provided that can be used to induce global neutralizing antibodies, or antibodies reactive against a wide range of influenza A virus strains. The antigenic peptide can correspond to SEQ ID NO: 34 (EKEVLVLWG), SEQ ID NO: 2 (KFDKLYIWG), SEQ ID NO: 71(QEDLLVLWG), SEQ ID NO: 51 (EGRINYYWTLLEP), SEQ ID NO: 3 (PSRISIYWTIVKP), and/or SEQ ID NO: 82 (SGRMEFFWTILKP). | 06-21-2012 |
20150044225 | Human Anti-Human Influenza Virus Antibody - Provided is a human antibody having a neutralization activity against a human influenza virus. More specifically, provided is a human antibody which recognizes a highly conserved region in a human influenza A virus subtype H3N2 or a human influenza B virus and has a neutralization activity against the virus. The human antibody is a human anti-human influenza virus antibody, which has a neutralization activity against a human influenza A virus subtype H3N2 and binds to a hemagglutinin HA1 region of the human influenza A virus subtype H3N2, or which has a neutralization activity against a human influenza B virus, and includes, as a base sequence of a DNA encoding a variable region of the antibody, a sequence set forth in any one of SEQ ID NOS: 5 to 12. | 02-12-2015 |
Yoshinobu Okuno, Osaka-Shi JP
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20090311667 | RAPID DIAGNOSIS METHOD SPECIFIC TO AVIAN INFLUENZA VIRUS - The present invention relates to a method for detecting an avian influenza virus by an immunological assay using an anti-influenza virus antibody being unreactive to human influenza type-A virus subtypes H1, H2 and H3 and a human influenza type-B virus and being reactive to plural subtypes of avian influenza viruses, and an immunochromatographic test tool for use in the method. According to the present invention, an avian influenza virus can be detected specifically, rapidly and in a simple manner, as distinguishing an avian influenza virus from a human influenza virus. | 12-17-2009 |
Yoshinori Okuno, Kariya-City JP
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20100242918 | CONNECTOR - A connector includes a body portion having an inner peripheral surface defining a cylindrical insertion hole for inserting therein a connection member and an O-ring. A recess portion is provided in the inner peripheral surface of the body portion, and is opened in the body portion in a radial direction of the body portion, at a position on an inlet side of the insertion hole than the arrangement position of the O-ring. Furthermore, the recess portion extends in an axial direction of the body portion and has an end portion on a side of an arrangement position of the O-ring, and the end portion of the recess portion becomes in an acute angle shape which is acute toward the arrangement position of the O-ring. Alternatively, an angle reducing portion may be provided in the recess portion on a side of the arrangement position of the O-ring. | 09-30-2010 |
20100244302 | METHOD OF MANUFACTURING CONNECTOR - A connector is manufactured by integrally molding with a resin, by using a first molding die having a molding portion for molding outer shapes of first and second connection portions of the connector, and a cylindrical second molding die inserted into the molding portion to mold an insertion hole in which a connection member is inserted. In the molding, a circular core portion is inserted into the molding portion in a state where the second molding die is inserted into the core portion. Then, the molded first and second connection portions are removed together with the core portion, from the first and second molding dies. Thereafter, the core portion in the first connection portion is dissolved by using a solvent, so that a circular recess portion for arranging an O-ring is formed to be recessed from a peripheral surface of the insertion hole to a radial outside. | 09-30-2010 |
20100244433 | CONNECTOR - A connector includes a body portion having a cylindrical insertion hole for inserting therein a connection member, and a cylindrical connector cover. The body portion includes a claw portion elastically deformable to a radial outside. The connector cover includes a claw release portion through which a limitation of an elastic deformation of the claw portion is released, and a claw limiting portion configured to limit the elastic deformation of the claw portion toward the radial outside. When the connector cover is located at a release position, the claw release portion is opposite to the claw portion but the claw limiting portion is not opposite to the claw portion. In contrast, when the connector cover is moved to a lock position, the claw limiting portion is opposite to the claw portion, and the claw portion is engaged with an engagement portion provided on the connection member. | 09-30-2010 |
20100244434 | CONNECTOR - A connector includes a body portion having a cylindrical insertion hole for inserting therein a connection member, and a cylindrical connector cover. The body portion includes a claw portion elastically deformable to a radial outside. A claw release portion and a claw covering portion are arranged in the connector cover in a rotation direction. When the connector cover is located at a release position where the body portion is detachable from the connection member, the claw release portion is opposite to the claw portion, and the claw covering portion is not opposite to the claw portion. Furthermore, when the connector cover is rotated from the release position to a lock position in a connection state between the body portion and the connection member, the claw covering portion is opposite to the claw portion, and the claw portion is engaged with an engagement portion of the connection member. | 09-30-2010 |
20100301143 | FUEL INJECTION DEVICE - The invention has an object for improving response of a fuel injection device. A flow-in recessed portion and a flow-out recessed portion are formed at a press-contacting surface of a floating plate, which is movably accommodated in a pressure control chamber. A flow-in port and a flow-out port are formed at a pressure control surface of a valve body. The flow-in port is opened to the flow-in recessed portion, while the flow-out port is opened to the flow-out recessed portion. When the floating plate is moved upwardly and the press-contacting surface is brought into contact with the pressure control surface, the flow-in port is surely closed. | 12-02-2010 |
Yoshito Okuno, Ritto-Shi JP
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20130021142 | RFID TAG AND RFID SYSTEM - Two antennas and an IC chip that independently operates the antennas are provided in a package of an RFID tag. Communication ranges A and B expanding in different directions when viewed from a front surface of the package are set by adjusting a directive characteristic of radio wave from each of the antennas. A reader/writer communicating with the tag selects one of the communication ranges A and B, and transmits a command including the identification information on the selected communication range. A control circuit in the IC chip executes the command on the condition that identification information included in the received command is matched with the antenna receiving the command, and returns response information through an antenna unit that receives the command. | 01-24-2013 |
Yukihiro Okuno, Minamiashigara-Shi JP
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20090108706 | FERROELECTRIC OXIDE, PROCESS FOR PRODUCING THE SAME, PIEZOELECTRIC BODY, AND PIEZOELECTRIC DEVICE - A composition of a ferroelectric oxide represented by General Formula (a) is adjusted such that the most stable crystal structures X and Y of ACO | 04-30-2009 |
Yutaro Okuno, Soraku-Gun JP
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20080218761 | SURFACE PLASMON RESONANCE SENSOR AND SENSOR CHIP - A sensor chip has a metal layer formed on a surface of a substrate, where a plurality of microscopic concave part is formed in a measurement region of the surface of the metal layer. When light of linear polarization is irradiated onto the measurement region, local resonance electric field generates at opposing metal layer surfaces in the concave part. The reflected light thereof is received to measure reflectance. The light of linear polarization is irradiated so that the polarizing surface becomes orthogonal to the longitudinal direction of the concave part. | 09-11-2008 |
20140231538 | LIQUID SPRAY APPARATUS - A liquid spray apparatus includes a liquid storage part storing a liquid, a vibratory source including a leading end, a recess being formed in a surface of the leading end, and a mesh member including a large number of micropores and arranged to abut on the surface of the leading end of the vibratory source. The liquid is supplied from the outside of the leading end to the surface and the recess of the leading end. The liquid supplied to the surface and the recess of the leading end is discharged in an atomized manner through the micropores by vibrations of the vibratory source. This liquid spray apparatus can stably spray the liquid with the vibratory source and the mesh member. | 08-21-2014 |