Foxon
C. T. Foxon, Nottingham GB
Patent application number | Description | Published |
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20090114887 | Bulk, free-standing cubic III-N substrate and a method for forming same. - A method of forming a bulk, free-standing cubic III-N substrate including a) growing epitaxial III-N material on a cubic III-V substrate using molecular beam epitaxy (MBE); and b) removing the III-V substrate to leave the III-N material as a bulk, free-standing cubic III-N substrate. A bulk, free-standing cubic III-N substrate for fabrication of III-N devices. | 05-07-2009 |
C. Thomas Foxon, Nottingham GB
Patent application number | Description | Published |
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20130126892 | P-Type Amorphous GaNAs Alloy as Low Resistant Ohmic Contact to P-Type Group III-Nitride Semiconductors - A new composition of matter is described, amorphous GaN | 05-23-2013 |
20130269763 | Electrical Device - The invention provides an electrical device, e.g. a solar cell, comprising at least one sub-cell containing a plurality of In | 10-17-2013 |
Steve Foxon, Broughton Astley GB
Patent application number | Description | Published |
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20100041488 | Playing Surface and Method of Manufacturing a Playing Surface - A playing surface comprising a foam layer ( | 02-18-2010 |