Patent application number | Description | Published |
20120276091 | Human Recombinant Monoclonal Antibody That Specifically Binds to VCAM-1 and Inhibits Adhesion and Transmigration Between Leukocytes and Endothelial Cells - The present invention relates to a human recombinant monoclonal antibody that specifically binds to human Vascular Cell Adhesion Molecule-1 (VCAM-1) to inhibit adhesion between leukocytes and activated endothelial cells and transmigration of leukocytes through the activated endothelial cells, and a prophylactic and therapeutic composition for inflammatory disease or cancer comprising the same. The human recombinant monoclonal antibody according to the present invention shows a strong affinity to VCAM-1 expressed on human endothelial cell, and effectively inhibits VCAM-1-mediated adhesion between leukocytes and activated endothelial cells and transmigration of leukocytes through the activated endothelial cells, thereby being used for the prevention and treatment of inflammatory disease such as asthma and arthritis, transplant rejection, cardiovascular disease, and cancer. | 11-01-2012 |
20120308574 | HUMAN MONOCLONAL ANTIBODY THAT SPECIFICALLY BINDS TO VCAM-1 AND A COMPOSITION FOR TREATING AN INFLAMMATORY DISEASE OR A CANCER COMPRISING THE SAME - The present invention relates to a human monoclonal antibody that specifically binds to VCAM-1, and a therapeutic composition for the treatment of inflammatory disease or cancer comprising the same. The human monoclonal antibody according to the present invention shows a strong affinity to VCAM-1 expressed on human or mouse endothelial cell, effectively inhibits leukocyte adhesion to activated endothelial cells expressing VCAM-1, and shows a low immunogenicity, thereby being used for the treatment of cancer or inflammatory disease such as asthma, rhinitis, arthritis, multiple sclerosis, bowel disease, arteriosclerosis, myocardial infarction and transplant rejection. | 12-06-2012 |
Patent application number | Description | Published |
20110241171 | Method of fabricating semiconductor integrated circuit device and semiconductor integrated circuit device fabricated using the method - Provided are a method of fabricating a semiconductor integrated circuit device and a semiconductor integrated circuit device fabricated using the method. The method includes: forming a mask film, which exposes a portion of a substrate, on the substrate; forming a first buried impurity layer, which contains impurities of a first conductivity type and of a first concentration, in a surface of the exposed portion of the substrate by using the mask film; removing the mask film; forming a second buried impurity layer, which contains impurities of a second conductivity type and of a second concentration, using blank implantation; and forming an epitaxial layer on the substrate having the first and second buried impurity layers, wherein the first concentration is higher than the second concentration. | 10-06-2011 |
20120037986 | SEMICONDUCTOR DEVICE - A semiconductor device includes a body region of a first conductivity type and a gate pattern disposed on the body region. The gate pattern has a linear portion extending in a first direction and having a uniform width and a bending portion extending from one end of the linear portion. The portion of a channel region located beneath the bending portion constitutes a channel whose length is greater than the length of the channel constituted by the portion of the channel region located beneath the linear portion. | 02-16-2012 |
20130256794 | METAL OXIDE SEMICONDUCTOR DEVICES WITH MULTIPLE DRIFT REGIONS - A semiconductor device includes a semiconductor substrate of a first conductivity type, a buried layer a second conductivity type different from the first conductivity type on the substrate and an epitaxial layer of the second conductivity type on the buried layer. The device further includes a pocket well of the first conductivity type in the epitaxial layer, a first drift region in the epitaxial layer at least partially overlapping the pocket well, a second drift region in the epitaxial layer and spaced apart from the first drift region, and a body region of the first conductivity type in the pocket well. A gate electrode is disposed on the body region, the pocket well and the first drift region and has an edge overlying the epitaxial region between the first and second drift regions. | 10-03-2013 |
20130265086 | Semiconductor Devices Including a Guard Ring and Related Semiconductor Systems - Semiconductor devices are provided. The semiconductor devices may include a substrate and a transistor on the substrate. The semiconductor devices may include a first guard ring of first conductivity type in the substrate adjacent the transistor. The semiconductor devices may include a second guard ring of second conductivity type opposite the first conductivity type in the substrate adjacent the first guard ring. Related semiconductor systems are also provided. | 10-10-2013 |
20130341714 | SEMICONDUCTOR DEVICE HAVING POWER METAL-OXIDE-SEMICONDUCTOR TRANSISTOR - A semiconductor device includes a power metal-oxide-semiconductor (MOS) transistor including a semiconductor substrate, an impurity region on the semiconductor substrate, the impurity region having a first conductivity, a drift region in the impurity region, the drift region having the first conductivity, a body region in the impurity region adjacent to the drift region, the body region having a second conductivity different from the first conductivity, a drain extension insulating layer on the drift region, a gate insulating layer and a gate electrode sequentially stacked across a portion of the body region and a portion of the drift region, a drain extension electrode on the drain extension insulating layer, a drain region contacting a side of the drift region opposite to the body region, the drain region having the first conductivity, and a source region in the body region, the source region having the second conductivity. | 12-26-2013 |
20150236087 | SEMICONDUCTOR DEVICES INCLUDING A GUARD RING AND RELATED SEMICONDUCTOR SYSTEMS - Semiconductor devices are provided. The semiconductor devices may include a substrate and a transistor on the substrate. The semiconductor devices may include a first guard ring of first conductivity type in the substrate adjacent the transistor. The semiconductor devices may include a second guard ring of second conductivity type opposite the first conductivity type in the substrate adjacent the first guard ring. Related semiconductor systems are also provided. | 08-20-2015 |
Patent application number | Description | Published |
20090137274 | MOBILE COMMUNICATION DEVICE WITH ENHANCED IMAGE COMMUNICATION CAPABILITY - A mobile communication device includes a first body, a folder portion rotatably coupled with the first body and positionable between open and closed positions, a first display unit coupled to the folder portion and configured to display first information, and a second display unit coupled to a first side of the first body and configured to receive input and display second information, wherein at least one of text information and graphic information received through the second display unit is displayed on the first display unit. | 05-28-2009 |
20110229966 | Nanoparticle-Based Gene Delivery Systems - The present invention provides a gene delivery system containing nanoparticles. In more detail, the present invention provides a gene delivery system containing (a) a nanomaterial; (b) an oligonucleotide as an universal binding partner covalently linked to the surface of the nanomaterial; and (c) a cargo comprising (i) a complementary oligonucleotide containing a nucleotide sequence complementary to the universal binding partner as a binding counter-partner, and (ii) an inhibitory molecule having a nucleotide sequence complementary to a target gene of interest to be inhibited or an inducible molecule having a nucleotide sequence of a target gene of interest to be expressed. The present invention is a gene delivery system capable of feasibly deliver aptamer, siRNA, shRNA, miRNA, ribozyme, DNAzyme, PNA or gene as well as antisense oligonucleotide into the cells. In addition, the present invention is more efficient than the commercially available gene transfer reagent in respect to the degree of knockdown of target protein expression. | 09-22-2011 |
20140287817 | METHOD FOR PROVIDING ON-LINE GAME WHICH SYSTEMATICALLY MAINTAINS MONSTER'S AGGRO POINTS AGAINST PLAYER CHARACTER AND SYSTEM THEREOF - Disclosed is a method for providing an online game, comprising the steps of: maintaining an event database recording an aggressive point generation function corresponding to each predetermined event; receiving a particular event from a player character; identifying an aggressive point generation function corresponding to the particular event by referring to the event database; generating aggressive point information according to receipt of the particular event, on the basis of the identified aggressive point generation function; recording the generated aggressive point information in a predetermined monster information database in association with the player character; and determining a target for attack of a monster on the basis of the aggressive point information recorded in the monster information database, and a system thereof. | 09-25-2014 |
Patent application number | Description | Published |
20110048586 | DUAL PHASE STEEL SHEET AND METHOD OF MANUFACTURING THE SAME - The present disclosure relates to a dual phase steel sheet and a method of manufacturing the same. The steel sheet comprises C: 0.05˜0.10% wt %, Si: 0.03˜0.50 wt %, Mn: 1.50˜2.00 wt %, P: greater than 0 wt %˜0.03 wt %, S: greater than 0 wt %˜0.003 wt %, Al: 0.03˜0.50 wt %, Cr: 0.1˜0.2 wt %, Mo: 0.1˜0.20 wt %, Nb: 0.02˜0.04 wt %, B: greater than 0 wt %˜0.005 wt %, N: greater than 0 wt %˜0.01 wt %, and the balance of Fe and other unavoidable impurities. To impart excellent formability, bake hardenability, dent resistance, high Ri value and plating characteristics to the steel sheet for exterior and interior panels of automobiles, the steel sheet is processed to have a dual phase structure through cold rolling, annealing, and hot-dip galvanizing. | 03-03-2011 |
20120255654 | DUAL PHASE STEEL SHEET AND METHOD OF MANUFACTURING THE SAME - The present disclosure relates to a dual phase steel sheet and a method of manufacturing the same. The steel sheet comprises C: 0.05˜0.10 % wt %, Si: 0.03˜0.50 wt %, Mn: 1.50˜2.00 wt %, P: greater than 0 wt %˜0.03 wt %, S: greater than 0 wt %˜0.003 wt %, Al: 0.03˜0.50 wt %, Cr:0.1˜0.2 wt %, Mo: 0.1˜0.20 wt %, Nb: 0.02˜0.04 wt %, B: greater than 0 wt %˜0.005 wt %, N: greater than 0 wt %˜0.01 wt %, and the balance of Fe and other unavoidable impurities. To impart excellent formability, bake hardenability, dent resistance, high Ri value and plating characteristics to the steel sheet for exterior and interior panels of automobiles, the steel sheet is processed to have a dual phase structure through cold rolling, annealing, and hot-dip galvanizing. | 10-11-2012 |