Patent application number | Description | Published |
20100130448 | 3',4',5-TRIMETHOXY FLAVONE DERIVATIVES AS STIMULATN OF MUCUS SECRETION, METHOD FOR THE SAME, AND PHARMACEUTICAL COMPOSITION COMPRISING THE SAME - The present invention provides a 3′,4′,5-trimethoxy flavone derivative and a pharmaceutically acceptable salt thereof, preparation thereof, and a pharmaceutical composition for the treatment and prevention of dry eye syndrome comprising the same as an active ingredient. | 05-27-2010 |
20100173915 | PHARMACEUTICAL COMPOSITIONS FOR THE TREATMENT OF CHRONIC HEART FAILURE COMPRISING PYRAZOLOPYRIMIDINONE DERIVATIVE COMPOUND - Disclosed herein is a therapeutic agent for chronic heart failure comprising, as an effective ingredient, 5-[2-propyloxy-5-(1-methyl-2-pyrrolidinyl-ethylamidosulfonyl)phenyl]-1-methyl-propyl-1,6-dihydro-7H-pyrazolo(4,3-d)pyrimidine-7-one. The compound inhibits phosphodiesterase-5 (PDE-5), which catalyzes the intracellular degradation of cyclic guanosine monophosphatase (cGMP), thereby mitigating several signs of chronic heart failure, that is, thereby preventing left ventricular dilatation, decreasing ventricular wall thinning, lowering elevated cardiac and circulating levels of atrial natriuretic peptide (ANP), and inhibiting ventricular fibrosis. Also, the compound has advantages in that it reaches the maximal plasma level in a short time, has an in vivo half-life longer than conventional PDE-5 inhibitors, allowing decreased administration frequency, and has fewer side effects, thus ensuring safety. Thus, the compound is useful as a therapeutic agent for chronic heart failure. | 07-08-2010 |
20100240725 | NOVEL 1,3-DIHYDRO-5-ISOBENZOFURANCARBONITRILE DERIVATIVES AND PHARMACEUTICAL COMPOSITION THEREOF FOR THE TREATMENT OF PREMATURE EJACULATION - Disclosed herein are novel 1,3-dihydro-5-isobenzofurancarbonitrile derivatives represented by Formula 1, or pharmaceutically acceptable salts thereof. Also disclosed is a pharmaceutical composition for treating or preventing premature ejaculation including the compound. The 1,3-dihydro-5-isobenzofurancarbonitrile derivatives have a short half-life and inhibit the ejaculation process by selectively inhibiting serotonin reuptake via a serotonin reuptake transporter present in a presynaptic neuron. Thus, the compounds are useful in the treatment and prevention of premature ejaculation. | 09-23-2010 |
20110306762 | ACID ADDITION SALT OF UDENAFIL, PREPARATION METHOD THEREOF AND PHARMACEUTICAL COMPOSITION COMPRISING THE SAME - The present invention provides an acid addition salt of Udenafil, a preparation method thereof and a pharmaceutical composition comprising the same. The acid addition salt of Udenafil in which Udenafil is bonded to an organic acid selected from the group consisting of oxalic acid, benzenesulfonic acid, camphorsulfonic acid, cinnamic acid, adipic acid and cyclamic acid, has excellent solubility in an aqueous medium, water stability and crystallinity, thereby being suitably applied for a pharmaceutical composition. | 12-15-2011 |
Patent application number | Description | Published |
20100173915 | PHARMACEUTICAL COMPOSITIONS FOR THE TREATMENT OF CHRONIC HEART FAILURE COMPRISING PYRAZOLOPYRIMIDINONE DERIVATIVE COMPOUND - Disclosed herein is a therapeutic agent for chronic heart failure comprising, as an effective ingredient, 5-[2-propyloxy-5-(1-methyl-2-pyrrolidinyl-ethylamidosulfonyl)phenyl]-1-methyl-propyl-1,6-dihydro-7H-pyrazolo(4,3-d)pyrimidine-7-one. The compound inhibits phosphodiesterase-5 (PDE-5), which catalyzes the intracellular degradation of cyclic guanosine monophosphatase (cGMP), thereby mitigating several signs of chronic heart failure, that is, thereby preventing left ventricular dilatation, decreasing ventricular wall thinning, lowering elevated cardiac and circulating levels of atrial natriuretic peptide (ANP), and inhibiting ventricular fibrosis. Also, the compound has advantages in that it reaches the maximal plasma level in a short time, has an in vivo half-life longer than conventional PDE-5 inhibitors, allowing decreased administration frequency, and has fewer side effects, thus ensuring safety. Thus, the compound is useful as a therapeutic agent for chronic heart failure. | 07-08-2010 |
20100240725 | NOVEL 1,3-DIHYDRO-5-ISOBENZOFURANCARBONITRILE DERIVATIVES AND PHARMACEUTICAL COMPOSITION THEREOF FOR THE TREATMENT OF PREMATURE EJACULATION - Disclosed herein are novel 1,3-dihydro-5-isobenzofurancarbonitrile derivatives represented by Formula 1, or pharmaceutically acceptable salts thereof. Also disclosed is a pharmaceutical composition for treating or preventing premature ejaculation including the compound. The 1,3-dihydro-5-isobenzofurancarbonitrile derivatives have a short half-life and inhibit the ejaculation process by selectively inhibiting serotonin reuptake via a serotonin reuptake transporter present in a presynaptic neuron. Thus, the compounds are useful in the treatment and prevention of premature ejaculation. | 09-23-2010 |
20110201624 | Pharmaceutical Composition for Prevention and Treatment of Diabetes or Obesity Comprising a Compound that Inhibits Activity of Dipeptidyl Peptidase-IV, and other Antidiabetic or Antiobesity Agents as Active Ingredients - The present invention relates to a pharmaceutical composition for the prevention and treatment of diabetes or obesity comprising as active ingredients a compound which inhibits the activity of dipeptidyl peptidase-IV (DPP-IV), a pharmaceutically acceptable salt thereof, a hydrate thereof, or a solvate thereof, and one or more other antidiabetic or antiobesity agents. The pharmaceutical composition exhibits excellent glucose tolerance and may be useful in the prevention and treatment of diabetes, obesity, and the like by effectively inhibiting blood glucose levels and reducing fat mass. | 08-18-2011 |
Patent application number | Description | Published |
20100156924 | LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display device capable of improving reliability of a backlight unit is disclosed. | 06-24-2010 |
20110141090 | LOCAL DIMMING DRIVING METHOD AND DEVICE OF LIQUID CRYSTAL DISPLAY DEVICE - Disclosed herein is a local dimming driving method and device of an LCD device, which is capable of compensating for a luminance deviation between blocks. The local dimming driving method of the LCD device includes divisionally driving all of a plurality of blocks of a backlight unit using a maximum luminance signal and measuring luminance per block, setting one of the plurality of blocks as a reference block, detecting luminance deviations between the reference block and the residual blocks, and setting an offset value per block for compensating for the detected luminance deviations per block, analyzing an input image in units of blocks corresponding to the plurality of blocks of a backlight unit respectively, detecting a representative value per block, and determining a dimming value per block according to the representative value per block, correcting the dimming value per block using the offset value per block, and controlling the luminance of the backlight unit on a block-by-block basis using the corrected dimming value per block. | 06-16-2011 |
20110141154 | LOCAL DIMMING DRIVING METHOD AND DEVICE OF LIQUID CRYSTAL DISPLAY DEVICE - Disclosed herein is a local dimming driving method and device of an LCD device, which is capable of minimizing luminance deviation at the same gray scale due to a dimming difference between blocks. The local dimming driving method of the LCD device includes analyzing input image data in units of blocks and determining a local dimming value per block, performing spatial filtering with respect to the local dimming value per block, repeating spatial filtering by a predetermined repeat count, and controlling luminance of a backlight unit on a block-by-block basis using the local dimming value per block controlled by spatial filtering. | 06-16-2011 |
20110141166 | LOCAL DIMMING DRIVING METHOD AND DEVICE OF LIQUID CRYSTAL DISPLAY DEVICE - Disclosed herein is a local dimming driving method and device of a Liquid Crystal Display (LCD) device, which is capable of preventing color change due to gray scale saturation when data is compensated while enabling local dimming. The local dimming driving method of the LCD device includes detecting maximum values per pixel from input image data, analyzing the maximum values per pixel on a block-by-block basis, and determining local dimming values per block according to the analysis result, calculating a first gain value using the local dimming values per block, calculating a maximum gain value per pixel using the maximum value per pixel as a second gain value, selecting a smaller value of the first and second gain values as a final gain value, compensating the input image data using the final gain value, and controlling luminance of a backlight unit on the block-by-block basis using the local dimming value per block. | 06-16-2011 |
Patent application number | Description | Published |
20110038626 | SHUTTER DEVICE FOR CAMERA - The present invention relates to a shutter device for camera used for small-sized digital equipment and includes a base forming a light transmission hole to expose a film or charge-coupled device (CCD) to laser beam; an electromagnet mounted on one side of the base; a driving arm which is mounted on one side of the electromagnet on the base so as to pivot on the base; a first shutter and a second shutter to open and close the light transmission hole, which pivots on the part of the base in association with the pivoting of the driving arm; and a magnetic which is installed on the driving arm and has the north magnetic pole and the south magnetic pole at opposite ends of the magnetic or on surfaces opposite to the electromagnet. The driving arm drives the first shutter and the second shutter by pivoting in a clockwise or counter-clockwise direction by the attractive force and repulsive force generated between the electromagnet and the magnetic according to the direction of the electric current applied to the electromagnet, the electromagnet includes a bobbin and a coil wound around the bobbin, and each side of the bobbin having opposite poles of magnetic field is disposed adjacent to the north and south pole. | 02-17-2011 |
20130172960 | METHOD FOR LOW-LEVEL LASER IRRADIATION FOR HEARING LOSS RESTORATION - A method for low-level laser irradiation for hearing loss reversal includes: generating low-frequency laser light; controlling an output intensity of the generated laser light; determining whether or not the wavelength and output of the laser light coincides with a preset reference wavelength and reference output intensity, respectively; and irradiating with the laser light into an inner ear through an external auditory meatus, wherein the reference wavelength is set in the range of 600 nm to 10,000 nm. | 07-04-2013 |
20130303838 | OPEN TYPE EAR TREATMENT MODULE - The present invention relates to an open type car treatment module which, when worn, allows simultaneous laser therapy and music therapy for brain-nervous system tissue by arranging the light source for low level laser therapy (LLLT) and sound source for music therapy (MT) properly, and can release the heat generated by the light source to outside by allowing ventilation with outside through open type configuration of module itself. | 11-14-2013 |
Patent application number | Description | Published |
20080317340 | Method and apparatus for correcting preferred color and liquid crystal display device using the same - A method and apparatus for correcting a preferred color, which is capable of correcting the preferred color in consideration of an input image and the visual characteristics of a person by correcting differences between colors preferred by the person and an average color coordinate of a color to be corrected in the input image, and a liquid crystal display device using the same are disclosed. The method for correcting a preferred color includes converting data of an input image into lightness (L), chroma (C) and hue (H) data, detecting a preferred-color pixel from the input image, calculating average values of the L, C and H data of the preferred-color pixel, correcting the C and H data of the preferred-color pixel according to differences between the average values of the C and H data and reference values of the C and H data, correcting the L data of the preferred-color pixel according to the average value of the L data according to the hue of the preferred-color pixel, and inversely converting the corrected L, C and H data into image data. | 12-25-2008 |
20090009539 | Color gamut mapping and liquid crystal display device using the same - A color gamut mapping method, which is capable of minimizing a color difference perceived by a person, preventing brightness and contrast from deteriorating, and improving color reproducibility, and a liquid crystal display device using the same are disclosed. The color gamut mapping method includes converting image data having an original gamut into lightness, chroma and hue data, adjusting a primary hue angle of the original gamut according to a reproduction gamut and adjusting the hue data according to the adjustment amount of the primary hue angle, changing the lightness of an original gamut boundary in consideration of a reproduction gamut boundary and changing the brightness data by the change amount of the lightness of the original gamut boundary, deciding a focal point, which is a reference point of color gamut mapping, according to the size, the shape and the position of the original/reproduction gamut in lightness and chroma coordinates, deciding a mapping slope according to the decided focal point FP and a mapping area in which the lightness and chroma data are located and mapping the original gamut to the reproduction gamut according to the decided mapping slope, and converting the lightness, chroma and hue data mapped to the reproduction gamut into image data. | 01-08-2009 |
20090010531 | Method and apparatus for detecting preferred color and liquid crystal display device using the same - Disclosed herein are a method and apparatus for detecting a preferred color, which is capable of accurately detecting a preferred-color area with a small amount of computations, and a liquid crystal display device using the same. The method for detecting a preferred color includes comparing a hue value of an input pixel with hue reference values and detecting a first preferred-color pixel, and performing a best linear estimation (BLE) operation with respect to the first preferred-color pixel and detecting a second preferred-color pixel. | 01-08-2009 |
20100157150 | METHOD AND APPARATUS FOR CORRECTING COLOR OF DISPLAY DEVICE - In order to improve video quality by accurately detecting a preferred color region and correcting the preferred color region to a target color, a method for correcting a color of a display device includes converting input R/G/B data into Y/Cb/Cr data, calculating a weight by an exponential function using a dispersion and a distance between an input value and a target value of the Y/Cb/Cr data, comparing the calculated weight with a target color range so as to detect a target color region, and calculating a detection probability, detecting an average value, a minimum value and a maximum value of the Y/Cb/Cr data for the detected target color region from a previous frame, calculating a correction constant using the average value, the minimum value and the maximum value of the Y/Cb/Cr data, a predetermined target value of the Y/Cb/Cr data, and the Y/Cb/Cr which is detected as the target color region and is input, adding the detection probability to the calculated correction constant as the weight so as to calculate a correction amount, correcting the input Y/Cb/Cr data using the calculated correction amount so as to output the Y/Cb/Cr data, and inversely converting the corrected Y/Cb/Cr data into R/G/B data. | 06-24-2010 |
20100309418 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - A liquid crystal display device includes: a first substrate and a second substrate; a gate line and a data line on the first substrate that cross each other to define a pixel region; a pixel electrode in the pixel region; a thin film transistor at the crossing of the gate and data lines, and connected to the pixel electrode; at least one first electric field distortion unit in the pixel electrode to control a liquid crystal director by electric field distortion; a second electric field distortion unit between the pixel electrode and the first substrate; and a layer of liquid crystal molecules between the first and second substrates | 12-09-2010 |
20110263055 | IN-PLANE SWITCHING MODE LIQUID CRYSTAL DISPLAY DEVICE - An in-plane switching mode liquid crystal display device includes first and second substrates facing each other, a gate line and a data line arranged on the first substrate crossing each other and defining a pixel region, a switching device at a crossing of the gate line and the data line, a common electrode and a pixel electrode alternately disposed in the pixel region, at least one of the common electrode and the pixel electrode including a multi-layer having a conductor layer and a reflectance reducing layer, and a liquid crystal layer formed between the first and second substrates. | 10-27-2011 |
20120068920 | METHOD AND INTERFACE OF RECOGNIZING USER'S DYNAMIC ORGAN GESTURE AND ELECTRIC-USING APPARATUS USING THE INTERFACE - A method of recognizing a user's dynamic organ for use in an electric-using apparatus includes scanning a target image inputted through an imaging element using a window; generating a HOG descriptor of a region of the target image that is scanned when it is judged that the scanned region includes a dynamic organ; measuring a resemblance value between the HOG descriptor of the scanned region and a HOG descriptor of a query template for a gesture of the dynamic organ; and judging that the scanned region includes the gesture of the dynamic organ when the resemblance value meets a predetermined condition. | 03-22-2012 |
20130120343 | Flat Panel Display and Method for Driving the Same - Disclosed herein are a flat panel display which is capable of reducing consumption of standby power, and a method for driving the same. The flat panel display includes a display unit for displaying an image, a driving circuit for controlling driving of the display unit, a receiver for receiving a user command, and a power supply unit for setting a power mode to a driving mode or a standby mode according to a predefined power setting or the user command, and supplying driving power to the display unit, driving circuit and receiver in the driving mode and only to the receiver in the standby mode. When the power mode is set to the standby mode, the power supply unit generates the driving power using a battery contained therein and supplies the generated driving power to the receiver, and cuts off input of external power. | 05-16-2013 |
20130265340 | Display Device and Method for Driving the Same - A display device capable of displaying a standby screen on a display panel with various colors in a standby mode, and a method for controlling the same are disclosed. The display device includes a display panel including pixels, gate lines and data lines connected to the pixels and a common line connected to the pixels, a gate switching unit for connecting the gate lines in response to an external standby mode signal, a data switching unit for grouping the data lines in response to the standby mode signal and connecting the data lines belonging to the same group, and a standby mode driving unit for driving the gate lines in response to the standby mode signal and driving the data lines of at least one group and the common line so as to generate a potential difference between the data lines of the group and the common line. | 10-10-2013 |
Patent application number | Description | Published |
20100002402 | Stretchable and Foldable Electronic Devices - Disclosed herein are stretchable, foldable and optionally printable, processes for making devices and devices such as semiconductors, electronic circuits and components thereof that are capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Strain isolation layers provide good strain isolation to functional device layers. Multilayer devices are constructed to position a neutral mechanical surface coincident or proximate to a functional layer having a material that is susceptible to strain-induced failure. Neutral mechanical surfaces are positioned by one or more layers having a property that is spatially inhomogeneous, such as by patterning any of the layers of the multilayer device. | 01-07-2010 |
20110133257 | TRANSFERRED THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - Provided are a transferred thin film transistor and a method of manufacturing the same. The method includes: forming a source region and a drain region that extend in a first direction in a first substrate and a channel region between the source region and the drain region; forming trenches that extend in a second direction in the first substrate to define an active layer between the trenches, the second direction intersecting the first direction; separating the active layer between the trenches from the first substrate by performing an anisotropic etching process on the first substrate inside the trenches; attaching the active layer on a second substrate; and forming a gate electrode in the first direction on the channel region of the active layer. | 06-09-2011 |
20130161704 | TRANSFERRED THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - Provided are a transferred thin film transistor and a method of manufacturing the same. The method includes: forming a source region and a drain region that extend in a first direction in a first substrate and a channel region between the source region and the drain region; forming trenches that extend in a second direction in the first substrate to define an active layer between the trenches, the second direction intersecting the first direction; separating the active layer between the trenches from the first substrate by performing an anisotropic etching process on the first substrate inside the trenches; attaching the active layer on a second substrate; and forming a gate electrode in the first direction on the channel region of the active layer. | 06-27-2013 |
20140140020 | Stretchable and Foldable Electronic Devices - Disclosed herein are stretchable, foldable and optionally printable, processes for making devices and devices such as semiconductors, electronic circuits and components thereof that are capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Strain isolation layers provide good strain isolation to functional device layers. Multilayer devices are constructed to position a neutral mechanical surface coincident or proximate to a functional layer having a material that is susceptible to strain-induced failure. Neutral mechanical surfaces are positioned by one or more layers having a property that is spatially inhomogeneous, such as by patterning any of the layers of the multilayer device. | 05-22-2014 |
Patent application number | Description | Published |
20100061303 | METHOD FOR TRANSMITTING CONTROL CHANNEL IN A MOBILE COMMUNICATION SYSTEM - In a mobile communication system using both a discontinuous transmission scheme and a compressed mode transmission scheme, if a preamble and/or a postamble of a channel including control information for transmitting a specific channel overlaps a compressed mode (CM) gap, an overall transmission unit is not transmitted or remaining signals of the transmission unit excluding the preamble and/or the postamble overlapping the CM gap are transmitted. | 03-11-2010 |
20100157916 | METHOD FOR RETRANSMITTING DATE IN THE MULTI-CARRIER SYSTEM - A method for modifying a synchronous non-adaptive retransmission scheme to solve the limitation of the synchronous non-adaptive retransmission scheme is disclosed. A method for indicating not only the new data transmission but also the retransmission using a data scheduling message is disclosed. A method for determining whether there is an error in the ACK signal transmitted from a data reception end using another message to-be received later is disclosed. The retransmission method for a multi-carrier system includes: receiving a grant message including scheduling information for transmitting uplink data wherein a retransmission scheme for the uplink data is predetermined by a first retransmission scheduling, transmitting the uplink data according to the scheduling information and retransmitting the uplink data according to second retransmission scheduling by receiving the second retransmission scheduling information associated with the uplink data with retransmission request. | 06-24-2010 |
20110218011 | METHOD OF CONTROL INFORMATION IN WIRELESS COMMUNICATION SYSTEM - A method of transmitting control information in a wireless communication system is disclosed. A method of receiving control information in a mobile station which receives downlink data from a plurality of cells simultaneously in a wireless communication system comprises receiving downlink control information including the control information on data transmitted from the plurality of cells from a serving base station via a downlink control channel. | 09-08-2011 |
20120008707 | METHOD FOR CONTROLLING TRANSMISSION POWER IN A MULTI-ANTENNA WIRELESS COMMUNICATION SYSTEM - The present invention relates to a wireless access system, and more particularly, to a method for controlling uplink transmission power in consideration of a transmission rank in a multi-antenna environment. A method for controlling the transmission power of an uplink data channel at a transmitting end which supports a plurality of transmission ranks according to one embodiment of the present invention, comprises the steps of: determining a first transmission power using at least one rank variable dependent on the transmission rank in a specific subframe; comparing the determined first transmission power with a second transmission power which is the preset maximum transmission power; and determining the value judged to be smaller than the result of the comparison to be the transmission power of the data channel. | 01-12-2012 |
20120063438 | METHOD FOR TRANSMITTING DATA BY APPLYING PRECODING MATRIX IN AN OPEN LOOP MIMO SYSTEM - A method for transmitting data by applying a precoding matrix in an open-loop multiple input multiple output (MIMO) system is disclosed. The method comprises selecting a precoding matrix and applying the selected precoding matrix to data during initial transmission; selecting a precoding matrix and applying the selected precoding matrix to data to be retransmitted; and retransmitting the data to which the precoding matrix is applied, wherein an index of the precoding matrix applied to the data is determined based on the times of current retransmission times of the data and index of the precoding matrix applied during initial transmission of the data. | 03-15-2012 |
Patent application number | Description | Published |
20080302949 | Photosensors Including Photodiode Control Electrodes and Methods of Operating Same - A sensor includes a substrate, a floating diffusion node in the substrate, a photodiode in the substrate laterally spaced apart from the floating diffusion region and a transfer transistor coupling the photodiode and the floating diffusion region. The sensor further includes a photodiode control electrode disposed on the photodiode and configured to control a carrier distribution of the photodiode responsive to a control signal applied thereto. The floating diffusion region may have a first conductivity type, the photodiode may include a first semiconductor region of a second conductivity type disposed on a second semiconductor region of the first conductivity type, and the photodiode control electrode may be disposed on the first semiconductor region. The photodiode may be configured to receive incident light from a side of the substrate opposite the photodiode control electrode. The transfer transistor may include a gate electrode on a channel region in the substrate and the photodiode control electrode and the transfer transistor gate electrode may be separately controllable. In further embodiments, the photodiode control electrode comprises an extension of the transfer transistor gate electrode. | 12-11-2008 |
20090230444 | CMOS IMAGE SENSOR CONFIGURED TO PROVIDE REDUCED LEAKAGE CURRENT - A complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) includes a semiconductor substrate including a photodiode therein as a light sensing unit. A floating diffusion region of a first conductivity type is provided in the semiconductor substrate, and is configured to receive charges generated in the photodiode. A power supply voltage region of the first conductivity type is also provided in the semiconductor substrate. A reset transistor including a reset gate electrode on a surface of the substrate between the floating diffusion region and a power supply voltage region is configured to discharge charges stored in the floating diffusion region in response to a reset control signal. The reset transistor includes a channel region in the substrate extending between the floating diffusion region and the power supply voltage region such that the floating diffusion region and the power supply voltage regions define source/drain regions for the reset transistor. An impurity region is provided in a first portion of the channel region adjacent to the floating diffusion region. The impurity region has a doping such that the first portion of the channel region adjacent to the floating diffusion region has a different built-in potential than a second portion of the channel region adjacent to the power supply voltage region. | 09-17-2009 |
20110156105 | PHOTOSENSORS INCLUDING PHOTODIODE CONTROL ELECTRODES AND METHODS OF OPERATING SAME - A sensor includes a substrate, a floating diffusion node in the substrate, a photodiode in the substrate laterally spaced apart from the floating diffusion region and a transfer transistor coupling the photodiode and the floating diffusion region. The sensor further includes a photodiode control electrode disposed on the photodiode and configured to control a carrier distribution of the photodiode responsive to a control signal applied thereto. The floating diffusion region may have a first conductivity type, the photodiode may include a first semiconductor region of a second conductivity type disposed on a second semiconductor region of the first conductivity type, and the photodiode control electrode may be disposed on the first semiconductor region. The photodiode may be configured to receive incident light from a side of the substrate opposite the photodiode control electrode. The transfer transistor may include a gate electrode on a channel region in the substrate and the photodiode control electrode and the transfer transistor gate electrode may be separately controllable. In further embodiments, the photodiode control electrode comprises an extension of the transfer transistor gate electrode. | 06-30-2011 |
20120248560 | Image Sensors - An image sensor includes a semiconductor substrate, a plurality of photo detecting elements and a backside protection pattern. The plurality of photo detecting elements may be formed in an upper portion of the semiconductor substrate. The plurality of photo detecting elements may be separate from each other. The backside protection pattern may be formed in a lower portion of the semiconductor substrate between the plurality of photo detecting elements. | 10-04-2012 |
20130207219 | PIXEL HAVING TWO SEMICONDUCTOR LAYERS, IMAGE SENSOR INCLUDING THE PIXEL, AND IMAGE PROCESSING SYSTEM INCLUDING THE IMAGE SENSOR - An image sensor having pixels that include two patterned semiconductor layers. The top patterned semiconductor layer contains the photoelectric elements of pixels having substantially 100% fill-factor. The bottom patterned semiconductor layer contains transistors for detecting, resetting, amplifying and transmitting signals charges received from the photoelectric elements. The top and bottom patterned semiconductor layers may be separated from each other by an interlayer insulating layer that may include metal interconnections for conducting signals between devices formed in the patterned semiconductor layers and from external devices. | 08-15-2013 |
Patent application number | Description | Published |
20100155818 | VERTICAL CHANNEL TYPE NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A method for fabricating, a vertical channel type nonvolatile memory device includes: alternately forming a plurality of sacrificial layers and a plurality of interlayer dielectric layers over a semiconductor substrate; etching the sacrificial layers and the interlayer dielectric layers to form a plurality of first openings for channel each of which exposes the substrate; filling the first openings to form a plurality of channels protruding from the semiconductor substrate; etching the sacrificial layers and the interlayer dielectric layers to form second openings for removal of the sacrificial layers between the channels; exposing sidewalls of the channels by removing the sacrificial layers exposed by the second openings; and forming a tunnel insulation layer, a charge trap layer, a charge blocking layer, and a conductive layer for gate electrode on the exposed sidewalls of the channels. | 06-24-2010 |
20110024818 | VERTICAL CHANNEL TYPE NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A method for fabricating a vertical channel type non-volatile memory device including forming a source region, alternately forming a plurality of interlayer dielectric layers and a plurality of conductive layers for a gate electrode over a substrate with the source region formed therein, forming a trench exposing the source region by etching the plurality of interlayer dielectric layers and the plurality of conductive layers for a gate electrode, and siliciding the conductive layers for a gate electrode and the source region that are exposed through the trench. | 02-03-2011 |
20120181603 | VERTICAL CHANNEL TYPE NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A method for fabricating a vertical channel type non-volatile memory device including forming a source region, alternately forming a plurality of interlayer dielectric layers and a plurality of conductive layers for a gate electrode over a substrate with the source region formed therein, forming a trench exposing the source region by etching the plurality of interlayer dielectric layers and the plurality of conductive layers for a gate electrode, and siliciding the conductive layers for a gate electrode and the source region that are exposed through the trench. | 07-19-2012 |
20130146962 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a plurality of first trenches having a first depth formed in a semiconductor substrate, a plurality of second trenches having a second depth formed in the semiconductor substrate, wherein the second depth is different from the first depth and the second trenches are formed between the first trenches, a plurality of isolation layers formed at the plurality of first trenches and the plurality of second trenches, wherein the isolation layers have upper portions formed above the semiconductor substrate, and a plurality of memory cells formed over the semiconductor substrate between the isolation layers. | 06-13-2013 |
20130175603 | VERTICAL CHANNEL TYPE NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A method for fabricating a vertical channel type nonvolatile memory device includes: alternately forming a plurality of sacrificial layers and a plurality of interlayer dielectric layers over a semiconductor substrate; etching the sacrificial layers and the interlayer dielectric layers to form a plurality of first openings for channel each of which exposes the substrate; filling the first openings to form a plurality of channels protruding from the semiconductor substrate; etching the sacrificial layers and the interlayer dielectric layers to form second openings for removal of the sacrificial layers between the channels; exposing side walls of the channels by removing the sacrificial layers exposed by the second openings; and forming a tunnel insulation layer, a charge trap layer, a charge blocking layer, and a conductive layer for gate electrode on the exposed sidewalls of the channels. | 07-11-2013 |
20130194869 | THREE-DIMENSIONAL NON-VOLATILE MEMORY DEVICE - A three-dimensional (3-D) non-volatile memory device according to embodiment of the present invention includes a plurality of bit lines, at least one string row extending in a first direction coupled to the bit lines and including 2N strings, wherein the N includes a natural number, a common source selection line configured to control source selection transistors of the 2N strings included in a memory block, a first common drain selection line configured to control drain selection transistors of a first string and a 2N-th string among the 2N strings included in a memory block, and N−1 second common drain selection lines configured to control drain selection transistors of adjacent strings in the first direction among remaining strings other than the first string and the 2N-th string. | 08-01-2013 |
20140035023 | NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A nonvolatile memory device includes a stacked structure disposed over a substrate and having a plurality of interlayer dielectric layers and conductive layers that are alternately stacked, a plurality of holes formed to pass through the stacked structure to expose the substrate, a first memory layer and a second memory layer formed separately in a circumference of each hole, and a first channel layer and a second channel layer formed respectively on the first and second memory layers. | 02-06-2014 |
20140048890 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor memory device and a method of manufacturing the same are provided. The device includes a semiconductor substrate in which active regions and isolation regions are alternately defined, and a support region is defined in a direction crossing the active regions and the isolation regions, first trenches formed in the isolation regions, second trenches formed under the first trenches in the active regions and the isolation regions; and a support layer formed under the first trenches in the support region. | 02-20-2014 |
20140063967 | SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD OF THE SAME - An operating method of a semiconductor memory device includes performing a first read operation on main cells of a first page with an initial read voltage, performing a second read operation on the main cells of the first page with a read voltage corresponding to a read retry number when the number of error bits generated as results of performing the first read operation exceeds the number of error-correctable bits, and storing the read retry number in spare cells of the first page while the second read operation is performed, and repeatedly performing the second read operation and repeatedly storing the read retry number until the number of error bits generated as results of performing the second read operation becomes the number of error-correctable bits or less. | 03-06-2014 |
20140302655 | NON-VOLATILE MEMORY DEVICE WITH VERTICAL MEMORY CELLS AND METHOD FOR FABRICATING THE SAME - A non-volatile memory device includes a plurality of gate electrodes stacked over a semiconductor substrate and stretched in a first direction along the semiconductor substrate and a plurality of junction layers having a first region protruding from the semiconductor substrate and crossing the gate electrodes and a second region formed between the gate electrodes. | 10-09-2014 |
20150056779 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a semiconductor substrate divided into a cell region and a peripheral circuit region defined in a first direction, wherein the peripheral circuit region is divided into a first region and a second region defined in a second direction substantially orthogonal to the first direction; gate lines formed over the semiconductor substrate in the cell region and arranged in the second direction; and a capacitor including lower electrodes over the semiconductor substrate, a dielectric layer and an upper electrode, wherein the lower electrodes in the first and second regions, separated from each other in the first direction and coupled to each other in the first region, the dielectric layer is formed along surfaces of the lower electrodes in the second region, and the upper electrode is formed over the dielectric layer. | 02-26-2015 |
Patent application number | Description | Published |
20080218474 | Ultra Thin Optical Pointing Device and Personal Portable Device Having the Same - The present invention relates to an ultra thin optical pointing device, and a personal portable device having the optical pointing device. The optical pointing device includes a PCB ( | 09-11-2008 |
20080218769 | Optical Pointing Device for Mobile Terminals - The present invention relates to an optical pointing device for mobile terminals, which can improve assembly efficiency and stability. An optical pointing device according to the present invention includes a holder having an accommodation opening therein. Light emitting means is installed in the accommodation opening of the holder. A condensing element includes a pair of prisms installed in the accommodation opening of the holder and integrated into a single structure so as to condense light emitted from the light emitting means, and a condensing lens disposed between the paired prisms. An image sensor captures light provided through the condensing element and calculates the captured light as displacement values. The condensing element includes a lens holder coupled to the condensing lens so as to maintain stable installation of the condensing lens between the paired prisms. | 09-11-2008 |
20100194712 | OPTICAL POINTING DEVICE AND PORTABLE ELECTRONIC DEVICE HAVING THE SAME - Disclosed herein is an optical pointing device as a user interface for electronic devices such as communication terminals and the like. The optical pointing device includes a light receiving part, an optical unit transferring light to the light receiving part and including a reflection part disposed in an optical path, a frame body integrally formed with the reflection part to support the reflection part, a cover covering the frame body and having an interface surface, and a light source illuminating the cover. The optical pointing device reduces the number of components and permits convenient and easy assembly, thereby significantly improving productivity while reducing assembly defect. | 08-05-2010 |
20110018800 | OPTICAL POINTING APPARATUS AND PORTABLE ELECTRONIC APPARATUS WITH THE SAME - An optical pointing device and a portable electronic device having the same, in which external noise light and/or noise light due to diffused reflection or the like is prevented from being introduced into an optical sensor enhancing precision of operation and providing a housing with improved structure. The device includes an infrared source; a cover having a cover plate transmitting infrared rays from the IR source for reaching a subject out of the cover plate and a cover frame that supports the cover plate; an optical unit in the cover and on which the infrared ray reflected from the subject is incident; and an optical sensor sensing the infrared ray incident thereon from the optical unit; the cover plate has a base coupled to the cover frame, and an IR band-pass filter layer provided on one side of the base. | 01-27-2011 |
Patent application number | Description | Published |
20100210827 | Preparation Method Of Recombinant Protein By Use Of A Fusion Expression Partner - The present invention relates to a preparation method using a fusion expression partner. The method includes preparing a polynucleotide encoding a fusion expression partner selected from the group consisting of SlyD (FKBR type peptidyl prolyl cis-trans isomerase). Crr (glucose-specific phosphotransferase (PTS) enzyme IIA component). RpoS (RNA polymerase sigma factor) PotD (Spermidine/putrescine-binding periplasmic protein), and RpoA (RNA polymerase alpha subunit), and an expression vector linking a polyDNA fragment of a heterologous protein, preparing a transformant by introducing the expression vector into a host cell, inducing the expression of a recombinant protein by culturing a transformant, and obtaining the expression. In the preparation method of the recombinant protein, the heterologous protein may enhance the water-solubility and folding of the recombinant protein, overcome the limitations about the water-solubility and folding which the conventional fusion expression partners have, and be used widely in the production of pharmaceutical and industrial proteins. | 08-19-2010 |
20110281300 | PREPARATION METHOD OF RECOMBINANT PROTEIN BY USE OF A FUSION EXPRESSION PARTNER - The present invention relates to a preparation method using a fusion expression partner. The method includes preparing a polynucleotide encoding a fusion expression partner selected from the group consisting of SlyD (FKBR-type peptidyl prolyl cis-trans isomerase), Crr (glucose-specific phosphotransferase (PTS) enzyme IIA component), RpoS (RNA polymerase sigma factor), PotD (Spermidine/putrescine-binding periplasmic protein), and RpoA (RNA polymerase alpha subunit), and an expression vector linking a polyDNA fragment of a heterologous protein, preparing a transformant by introducing the expression vector into a host cell, inducing the expression of a recombinant protein by culturing a transformant, and obtaining the expression. In the preparation method of the recombinant protein, the heterologous protein may enhance the water-solubility and folding of the recombinant protein, overcome the limitations about the water-solubility and folding which the conventional fusion expression partners have, and be used widely in the production of pharmaceutical and industrial proteins. | 11-17-2011 |
Patent application number | Description | Published |
20080214018 | TEMPLATE DERIVATIVE FOR FORMING ULTRA-LOW DIELECTRIC LAYER AND METHOD OF FORMING ULTRA-LOW DIELECTRIC LAYER USING THE SAME - A reactive cyclodextrin derivative or a reactive glucose derivative is used as a template derivative for forming an ultra-low dielectric layer. A layer is formed of the reactive cyclodextrin derivative or the reactive glucose derivative capped with Si—H and then cured in an atmosphere of hydrogen peroxide to form the ultra-low dielectric layer. | 09-04-2008 |
20090035917 | METHOD FOR FORMING DEVICE ISOLATION STRUCTURE OF SEMICONDUCTOR DEVICE USING ANNEALING STEPS TO ANNEAL FLOWABLE INSULATION LAYER - A method for forming a device isolation structure of a semiconductor device using at least three annealing steps to anneal a flowable insulation layer is presented. The method includes the steps of forming a hard mask pattern on a semiconductor substrate having active regions exposing a device isolation region of the semiconductor substrate; etching the device isolation region of the semiconductor substrate exposed through the hard mask pattern, and therein forming a trench; forming a flowable insulation layer to fill a trench; first annealing the flowable insulation layer at least three times; second annealing the first annealed flowable insulation layer; removing the second annealed flowable insulation layer until the hard mask pattern is exposed; and removing the exposed hard mask pattern. | 02-05-2009 |
20090061622 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE CAPABLE OF PREVENTING LIFTING OF AMORPHOUS CARBON LAYER FOR HARD MASK - In a method for manufacturing a semiconductor device, a conductive layer is formed on a semiconductor substrate. A surface of the conductive layer is then treated by plasma. After the conductive layer is treated, an amorphous carbon layer for a hard mask is formed on the surface of the conductive layer that has been treated by the plasma. | 03-05-2009 |
20090162990 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE CAPABLE OF PREVENTING THE DECREASE OF THE WIDTH OF AN ACTIVE REGION - A method for manufacturing a semiconductor device that can prevent the loss of an isolation structure and that can also stably form epi-silicon layers is described. The method for manufacturing a semiconductor device includes defining trenches in a semiconductor substrate having active regions and isolation regions. The trenches are partially filled with a first insulation layer. An etch protection layer is formed on the surfaces of the trenches that are filled with the first insulation layer. A second insulation layer is filled in the trenches formed with the etch protection layer to form an isolation structure in the isolation regions of the semiconductor substrate. Finally, portions of the active regions of the semiconductor substrate are recessed such that the isolation structure has a height higher than the active regions of the semiconductor substrate. | 06-25-2009 |
20110003447 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH VERTICAL TRANSISTOR - A method for fabricating a semiconductor device includes forming a plurality of first active pillars by etching a substrate using a hard mask layer as an etching barrier, forming a gate conductive layer surrounding sidewalls of the first active pillars and the hard mask layer, forming a word line conductive layer filling gaps defined by the gate conductive layer, forming word lines and vertical gates by simultaneously removing portions of the word line conductive layer and the gate conductive layer on the sidewalls of the hard mask layer, forming an inter-layer dielectric layer filling gaps formed by removing the word line conductive layer and the gate conductive layer, exposing surfaces of the first active pillars by removing the hard mask layer, and growing second active pillars over the first active pillars. | 01-06-2011 |
20120231634 | TEMPLATE DERIVATIVE FOR FORMING ULTRA-LOW DIELECTRIC LAYER AND METHOD OF FORMING ULTRA-LOW DIELECTRIC LAYER USING THE SAME - A reactive cyclodextrin derivative or a reactive glucose derivative is used as a template derivative for forming an ultra-low dielectric layer. A layer is formed of the reactive cyclodextrin derivative or the reactive glucose derivative capped with Si—H and then cured in an atmosphere of hydrogen peroxide to form the ultra-low dielectric layer. | 09-13-2012 |
20120231635 | TEMPLATE DERIVATIVE FOR FORMING ULTRA-LOW DIELECTRIC LAYER AND METHOD OF FORMING ULTRA-LOW DIELECTRIC LAYER USING THE SAME - A reactive cyclodextrin derivative or a reactive glucose derivative is used as a template derivative for forming an ultra-low dielectric layer. A layer is formed of the reactive cyclodextrin derivative or the reactive glucose derivative capped with Si—H and then cured in an atmosphere of hydrogen peroxide to form the ultra-low dielectric layer. | 09-13-2012 |
Patent application number | Description | Published |
20100244920 | DELAY CIRCUIT - A delay circuit includes first and second selective delay stages each including a number of unit delay cells to delay signals applied thereto; and a delay control unit configured to control selectively applying an input signal to the first selective delay stage or the second selective delay stage in response to a code combination of first and second selection signals and produce an output signal. | 09-30-2010 |
20110156766 | DELAY LOCKED LOOP - A delay locked loop includes a replica delay oscillator unit, a division unit, a pulse generation unit, a code value output unit, and a delay line. The replica delay oscillator unit generates a replica oscillation signal having a period corresponding to a replica delay. The division unit receives the replica oscillation signal and a clock signal and divides the replica oscillation signal and the clock signal at a first or second ratio in response to a delay locking detection signal. The pulse generation unit generates a delay pulse having a pulse width corresponding to a delay amount for causing a delay locking. The code value output unit adjusts a code value corresponding to the pulse width of the delay pulse in response to the delay locking detection signal. The delay line delays the clock signal in response to the code value. | 06-30-2011 |
20110156767 | DELAY LOCKED LOOP AND METHOD FOR DRIVING THE SAME - A delay locked loop includes a delay pulse generation unit, a coding unit, and a delay line. The delay pulse generation unit is configured to generate a delay pulse having a certain width. The coding unit is configured to code the delay pulse and output a code value. The delay line is configured to delay an input clock by the code value, and generate a delayed locked clock. The delay pulse has a logic high level state during a third period equivalent to a difference between a first period, which corresponds to an integer multiple of the input clock, and a second period, which is a certain replica delay period. | 06-30-2011 |
20110291730 | OPEN LOOP TYPE DELAY LOCKED LOOP AND METHOD FOR OPERATING THE SAME - An open loop type delay locked loop includes a delay amount pulse generation unit configured to generate a delay amount pulse having a pulse width corresponding to a delay amount for delay locking a clock signal, a delay amount coding unit configured to output a code value by coding the delay amount in response to the delay amount pulse, a clock control unit configured to adjust a toggling period of the clock signal in response to a control signal, and a delay line configured to delay an adjusted clock signal outputted from the clock control unit in response to the code value. | 12-01-2011 |
20120008433 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes an open-loop-type delay locked loop (DLL) configured to generate a clock signal locked by reflecting a first delay amount which actually occurs in a data path and a second delay amount which is required for locking the clock signal, a latency control unit configured to shift an inputted command according to a latency code value corresponding to the first delay amount and latency information, and output the shifted command, and an additional delay line configured to delay the shifted command according to a delay code value corresponding to the second delay amount, and output the command of which operation timing is controlled. | 01-12-2012 |
20120154002 | DELAY LOCKED LOOP - A delay locked loop includes a replica delay oscillator unit, a division unit, a pulse generation unit, a code value output unit, and a delay line. The replica delay oscillator unit generates a replica oscillation signal having a period corresponding to a replica delay. The division unit receives the replica oscillation signal and a clock signal and divides the replica oscillation signal and the clock signal at a first or second ratio in response to a delay locking detection signal. The pulse generation unit generates a delay pulse having a pulse width corresponding to a delay amount for causing a delay locking. The code value output unit adjusts a code value corresponding to the pulse width of the delay pulse in response to the delay locking detection signal. The delay line delays the clock signal in response to the code value. | 06-21-2012 |
20120154006 | DUTY CYCLE CORRECTION CIRCUIT - A duty cycle correction circuit includes a duty cycle control unit configured to generate a corrected clock signal by correcting a duty cycle of an input clock signal in response to a control signal, a duty cycle detection unit configured to detect a duty cycle of the corrected clock signal and output a detection signal, and a control signal generation unit configured to generate the control signal in response to the detection signal. | 06-21-2012 |
Patent application number | Description | Published |
20100310485 | USE OF MELANIN BIOSYNTHESIS INHIBITORS FROM KOREAN GINSENG AND THE COSMETIC COMPOSITION CONTAINING THEREOF FOR SKIN WHITENING - Disclosed herein is a whitening cosmetic composition containing plant-derived ginsenoside Fl (20-O-β-D-glucopyranosyl-20(S)-protopanaxatriol) as an active ingredient. More specifically, the ginsenoside Fl is obtained from particularly a ginseng extract using an acid, a base, an enzyme or microorganism, and a whitening cosmetic composition containing the ginsenoside Fl has an excellent effect of inhibiting melanin biosynthesis, and thus provides an excellent skin whitening effect. | 12-09-2010 |
20110124595 | METHOD FOR PREPARING POLYSACCHARIDE OF GREEN TEA AND COSMETIC COMPOSITION FOR SKIN WHITENING, MOISTURIZATION AND ANTI-WRINKLE EFFECTS COMPRISING THE POLYSACCHARIDE - Disclosed is a method for preparing polysaccharides of green tea, and more particularly to a method for preparing polysaccharides of green tea comprising the steps of: a) removing chlorophyll and a low molecular weight polyphenol from green tea powder using a solvent; b) hot-water extracting a water-soluble active ingredient from the green tea residue of step a); and c) separating the polysaccharides of green tea from the hot-water extract of step b) by ultrafiltration and ethanol precipitation. Also, the present invention relates to a cosmetic composition for skin whitening, moisturization and anti-wrinkle effects comprising the polysaccharides of green tea as an effective ingredient. | 05-26-2011 |
20140341827 | METHOD FOR PREPARING POLYSACCHARIDE OF GREEN TEA AND COSMETIC COMPOSITON FOR SKIN WHITENING, MOISTURIZATION AND ANTI-WRINKLE EFFECTS COMPRISING THE POLYSACCHARIDE - Disclosed is a method for preparing polysaccharides of green tea, and more particularly to a method for preparing polysaccharides of green tea comprising the steps of: a) removing chlorophyll and a low molecular weight polyphenol from green tea powder using a solvent; b) hot-water extracting a water-soluble active ingredient from the green tea residue of step a); and c) separating the polysaccharides of green tea from the hot-water extract of step b) by ultrafiltration and ethanol precipitation. Also, the present invention relates to a cosmetic composition for skin whitening, moisturization and anti-wrinkle effects comprising the polysaccharides of green tea as an effective ingredient. | 11-20-2014 |
Patent application number | Description | Published |
20100006382 | BRACKET FOR MOUNTING SHOCK ABSORBER - A bracket for mounting a shock absorber configured to couple a distal end of a piston rod of the shock absorber to a vehicle body includes a body having a recess formed therein, the recess configured to receive a bush assembly, a flange extending from the body, and at least one lateral reinforcement rib formed between the flange and the body to reinforce the bracket. | 01-14-2010 |
20100142241 | CAM CELL MEMORY DEVICE - A code address memory (CAM) cell memory device comprises a first storage unit comprising a first nonvolatile memory cell configured to output a power source voltage in response to a read voltage, and a second storage unit comprising a second nonvolatile memory cell configured to output a ground voltage in response to the read voltage. | 06-10-2010 |
20100214848 | NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A nonvolatile memory device includes a first node, a current source configured to have a current value determined according to a voltage supplied to the first node, and a memory cell string coupled to the first node, the memory cell string including at least one memory cell. Whether a memory cell included in the memory cell string has been programmed is determined based on the voltage supplied to the first node. | 08-26-2010 |
20100302856 | NONVOLATILE MEMORY DEVICE AND METHOD OF PROGRAMMING AND READING THE SAME - A nonvolatile memory device includes a control circuit configured to generate a control signal by counting a number of first data among input data, a buffer unit configured to temporarily store the input data, invert the input data in response to the control signal, and store the inverted data or the input data as the program data, and a memory cell block configured to receive and store the program data. | 12-02-2010 |
20120112118 | Soundproofing Nanoclay Composite and Method of Manufacturing the Same - Disclosed is a method of manufacturing soundproofing composite, and a soundproofing composite manufactured by the aforementioned method, the method comprising preparing a mixture by dissolving PP resin and nanoclay in a solvent; and volatilizing the solvent from the mixture. According to the present invention, the composite is manufactured by dissolving PP resin and nanoclay, to thereby realize great stiffness and soundproofing properties. | 05-10-2012 |
20130151758 | NONVOLATILE MEMORY DEVICE - A nonvolatile memory device includes: N (N is an integer equal to or greater than 2) number of nonvolatile memory cells disposed in a flag area of a page, N number of flag page buffers configured to input and output flag data to and from the nonvolatile memory cells of the flag area, and a data input/output control unit configured to select R number of flag page buffers so that the flag data is inputted and outputted from the R selected flag page buffers and no flag data is inputted and outputted through unselected N−R number of flag page buffers, wherein no one flag page buffer of the R selected flag page buffers is immediately adjacent to another one of the R selected flag page buffers. | 06-13-2013 |
20140355354 | INTEGRATED CIRCUIT AND OPERATION METHOD THEREOF - An integrated circuit includes a mirroring/amplifying unit suitable for mirroring and amplifying a sensing current that flows on a signal transmission line coupled to an internal circuit, and outputting an amplified current; a reference current generating unit suitable for generating a reference current; and a state determination unit suitable for comparing the reference current with the amplified current and determining a state of the internal circuit based on a comparison result. | 12-04-2014 |
Patent application number | Description | Published |
20090014833 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - An exemplary semiconductor device includes a semiconductor substrate on which lower electrodes are formed. The lower electrodes are arranged in an array including a rows extending substantially parallel to one another along a first direction. A stripe-shaped capacitor support pad is interposed between a pair of adjacent ones of the rows and is connected to lower electrodes in the pair of adjacent ones of the rows. The semiconductor device may include plurality of capacitors each including a one of the lower electrodes, a dielectric film, and an upper electrode. An upper end of the capacitor support pad is below the upper ends of the lower electrodes. A portion of the stripe-shaped capacitor support pad is interposed between adjacent ones of lower electrodes included within at least one of the rows and is connected to the adjacent ones of lower electrodes included within the at least one of the rows. | 01-15-2009 |
20090032905 | Electronic Devices Including Electrode Walls with Insulating Layers Thereon - An electronic device may include a substrate and a plurality of conductive electrodes on the substrate. Each of the conductive electrodes may have a respective electrode wall extending away from the substrate, and an electrode wall of at least one of the conductive electrodes may include a recessed portion. In addition, an insulating layer may be provided on the electrode wall, and portions of the electrode wall may be free of the insulating layer between the substrate and the insulating layer. | 02-05-2009 |
20090206399 | METHOD OF FORMING A RECESS CHANNEL TRENCH PATTERN, AND FABRICATING A RECESS CHANNEL TRANSISTOR - A method of forming a recess channel trench pattern for forming a recess channel transistor is provided. A mask layer is formed on a semiconductor substrate, which is then patterned to expose an active region and a portion of an adjacent device isolating layer with an isolated hole type pattern. Using this mask layer the semiconductor substrate and the device isolating layer portion are selectively and anisotropically etched, thereby forming a recess channel trench with an isolated hole type pattern. The mask layer may be patterned to be a curved line type. In this case, the once linear portion is curved to allow the device isolating layer portion exposed by the patterned mask layer to be spaced apart from an adjacent active region. The semiconductor substrate and the device isolating layer portion are then etched, thereby forming a recess channel trench with a curved line type pattern. | 08-20-2009 |
Patent application number | Description | Published |
20100149326 | PLASMA MONITORING DEVICE AND METHOD - A plasma monitoring device includes a plasma supplier including a power supply, a reaction gas supply line, and an emission nozzle for emitting plasma, which is generated therein, toward an object; a camera unit for obtaining an image of the plasma emission state; and a controller for obtaining a measurement value by converting pixel information of the image into a numerical value and comparing it with a reference value, which is a measurement value in a normal emission state, to check the plasma emission state. The camera unit obtains an image of the plasma emission state, and the controller analyzes the image to obtain a measurement value, which is used to monitor the state of plasma in real time and control the amount of reaction gas supplied to the plasma supplier and the plasma discharge condition, so that plasma is evenly emitted from the plasma supplier. | 06-17-2010 |
20100277745 | Method for Measuring Thickness - Disclosed is a method for measuring a thickness of a subjecting layer attacked on a base layer by means of an interferometer, which includes the steps of: obtaining a correlation equation of a phase difference with respect to thicknesses of sample layers, the thicknesses being different from each other, the sample layers being made from a material substantially equal to a material of the subjecting layer; obtaining a first interference signal with respect to an optical axial direction incident to the base layer at a boundary surface between an air layer and the base layer; obtaining a second interference signal with respect to the optical axial direction at a boundary surface between the subjecting layer and the base layer; obtaining a phase difference between a phase of the first interference signal and a phase of the second interference signal at respective heights substantially equal to each other with respect to the optical axial direction; and determining a thickness of the subjecting layer by inserting the phase difference into the correlation equation. | 11-04-2010 |
20110001988 | Apparatus for Measuring Thickness - An apparatus for measuring a thickness, which includes: a first beam splitter for reflecting or transmitting a ray irradiated from an optical source or a ray reflected by a measurement object; a first lens part which condenses a ray to the measurement object and generates a reference ray having a difference of a light path in comparison with a ray reflected by the measurement object; a second lens part for condensing a ray to the object to be measured; an interference light detector which corresponds to at the first lens part so as to form a light path and detects an interference signal generated by the ray reflected by the measurement object and the reference ray; a spectroscopic detector which corresponds to the second lens part so as to form a light path different from the light path formed by the interference light detector and splits the ray reflected by the measurement object so as to detect an intensity and a wavelength of each split ray; and a light path converter for selectively transmitting a ray to one of the interference light detector and the spectroscopic detector, wherein position exchanging is performed between the first lens part and the second lens part. | 01-06-2011 |
20110188048 | Method for Measuring Thickness or Surface Profile - Disclosed is a method of measuring thickness or a surface profile of a thin film layer formed on a base layer through a white light scanning interferometry, the method including: preparing simulation interference signals corresponding to thicknesses by assuming a plurality of sample thin film layers different in thickness from one another and simulating interference signals with respect to the respective sample thin film layers; acquiring a real interference signal with respect to an optical-axis direction of entering the thin film layer by illuminating the thin film layer with white light; preparing a plurality of estimated thicknesses that the thin film layer may have on the basis of the real interference signal; comparing whether the simulation interference signal having thickness corresponding to the estimated thickness is substantially matched with the real interference signal; and determining the thickness of the simulation interference signal substantially matched with the real interference signal as the thickness of the thin film layer. | 08-04-2011 |
Patent application number | Description | Published |
20090142418 | ANTIVIRAL COMPOSITION COMPRISING ALNUS JAPONICA EXTRACTS - Antiviral compositions including | 06-04-2009 |
20090155310 | HN EPITOPE RECOGNIZED BY AVIAN IMMUNE SYSTEM AND ANTIGENIC VARIANT NEWCASTLE DISEASE VIRUSES CARRYING CHANGES IN THE EPITOPE - The present invention relates to an epitope of HN protein in Newcastle disease virus which can be recognized by an avian immune system and an antibody against the epitope, a method for detecting a Newcastle disease virus by using the antibody, and an antigenic variant of Newcastle disease virus carrying changes in the epitope. The epitope of HN protein and the antigenic variant of Newcastle disease virus can be used for developing efficient vaccines, and further, in diagnosing the Newcastle disease virus rapidly and exactly. | 06-18-2009 |
20090175963 | ANTIVIRAL COMPOSITION COMPRISING LYCORIS SQUAMIGERA EXTRACTS - Antiviral compositions including | 07-09-2009 |
20100189827 | ANTIVIRAL COMPOSITION COMPRISING ALNUS JAPONICA EXTRACTS - Antiviral compositions including | 07-29-2010 |
20110077083 | METHOD FOR PROVIDING USER INTERFACE FOR CONTROLLING GAME - Disclosed is a user interface providing method for controlling a game play in a portable device. A user interface providing technology determines whether a received first touch input is a touch input for setting a GUI, determines a GUI setting mode, and activating at least one GUI element for controlling the game play in response to the GUI setting mode. | 03-31-2011 |
20130216995 | METHOD, APPARATUS AND SYSTEM FOR LEARNING PLAN ANALYSIS - The present invention relates to a method, apparatus and system for learning plan analysis. According to one embodiment of the present invention, the method for learning plan analysis includes: providing a learner with learning materials commensurate with a learning progress or learning ability; receiving learning information responsive to the learning materials; and generating analysis data from analyzing interaction patterns of a user in learning. | 08-22-2013 |