Patent application number | Description | Published |
20110051498 | SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a semiconductor memory device includes a memory cell, a power supply circuit, an interconnection and a discharging circuit. The memory cell includes a variable resistance element whose resistance varies by application of a voltage. The power supply circuit outputs the voltage to be applied to the memory cell. The interconnection is formed between the power supply circuit and the memory cell and supplies the voltage output from the power supply circuit to the memory cell. The discharging circuit is connected to the interconnection. The discharging circuit discharges electric charge accumulated in the interconnection after a first operation of applying the voltage to the memory cell is ended and before a second operation of applying the voltage to the memory cell next is started. | 03-03-2011 |
20110235400 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR CONTROLLING THE SAME - According to one embodiment, a method for controlling a semiconductor device comprises determining a select bit number for a group of memory cells each includes a variable-resistance element, setting a first voltage corresponding to the select bit number, applying the set first voltage to the memory cell group, and performing verify read on the memory cell group to which the first voltage has been applied and determining whether or not the memory cell group passes the verify read. If the memory cell group is determined not to pass the verify read, the number of bits corresponding to passed memory cells is subtracted from the select bit number, and the first voltage corresponding to the decreased select bit number is set again. | 09-29-2011 |
20120069627 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device includes: a memory cell array including plural first lines, plural second lines, and plural memory cells each including a variable resistance element; a first decoder connected to at least one ends of the plurality of first lines and configured to select at least one of the first lines; at least one pair of second decoders connected to both ends of the plurality of second lines and configured such that one of the pair of second decoders is selected for selecting the second lines according to a distance between the one of the first lines selected by the first decoder and the both ends of the second lines; and a voltage application circuit configured to apply a certain voltage between the first line and the second line selected by the first decoder and the second decoder. | 03-22-2012 |
20130229850 | SEMICONDUCTOR STORAGE DEVICE AND METHOD OF CONTROLLING DATA THEREOF - A semiconductor storage device includes a memory cell array, and a control circuit. The memory cell array has memory cells including variable resistive elements disposed at intersections of a plurality of first lines and a plurality of second lines. The control circuit performs a set pulse applying operation, and a cure pulse applying operation. The set pulse applying operation applies a set pulse to a variable resistive element so as to cause the variable resistive element to transition from a high resistance state to a low resistance state. The cure pulse applying operation applies a cure pulse to the variable resistive element. The cure pulse has a polarity that is opposite of a polarity of the set pulse, and is larger than the set pulse. | 09-05-2013 |
20130229851 | SEMICONDUCTOR STORAGE DEVICE AND DATA CONTROL METHOD THEREOF - In a memory cell array, memory cells each including a variable resistance element are arranged at crossing portions between a plurality of first wiring and a plurality of second wirings. A control circuit executes a set operation, a reset operation, and a training operation. In the set operation, a set pulse is applied to the variable resistance element to change the variable resistance element from a high resistance state to a low resistance state. In the reset operation, a reset pulse having an opposite polarity to the polarity of the set pulse is applied to the variable resistance element to change the variable resistance element from the low resistance state to the high resistance state. In the training operation, the set pulse and the reset pulse are continuously applied to the variable resistance element. | 09-05-2013 |
20140063908 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device according to an embodiment comprises: a memory cell array including memory cells, each of the memory cells disposed at each of intersections of first lines and second lines and including a variable resistor; and a control circuit configured to apply a first voltage to a selected first line and to apply a second voltage having a voltage value which is smaller than that of the first voltage to a selected second line, such that a selected memory cell is applied with a first potential difference required in an operation of the selected memory cell. The control circuit is configured such that when the first potential difference is applied a plurality of times to a plurality of the selected memory cells to execute the operation, the number of selected memory cells simultaneously applied with the first potential difference can be changed. | 03-06-2014 |
Patent application number | Description | Published |
20110286260 | NONVOLATILE MEMORY DEVICE AND METHOD FOR DRIVING SAME - According to one embodiment, a nonvolatile memory device includes a memory unit and a control unit. The memory unit includes first and second interconnects, and a memory cell. The second interconnect is non-parallel to the first interconnect. The memory cell includes a resistance change layer provided at an intersection between the first and second interconnects. The control unit is connected to the first and second interconnects to supply voltage and current to the resistance change layer. The control unit increases an upper limit of a current supplied to the first interconnect based on a change of a potential of the first interconnect when applying a set operation voltage to the first interconnect in a set operation of changing the resistance change layer from a first state with a first resistance value to a second state with a second resistance value being less than the first resistance value. | 11-24-2011 |
20130229852 | SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a semiconductor memory device includes a semiconductor substrate, a plurality of memory cells, a plurality of wires, and a control circuit. The control circuit allows a first current to change a state to flow on a selected cell by applying a first potential difference between a pair of wires that sandwich the selected cell selected from the plurality of memory cells with respect to the semiconductor substrate vertically, and allows a second current lower than the first current to flow on an non-selected cell in the same direction as the direction of the first current by applying a second potential difference between a pair of wires that sandwich the non-selected cell connected to a wire shared with the selected cell on a different layer from the selected cell. | 09-05-2013 |
20130229853 | SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a semiconductor memory device includes a plurality of cell array blocks and a control circuit. The control circuit sets a selected bit line to have 0 volt, applies a first electric potential which is higher than 0 volt to a selected word line, applies a second electric potential which is higher than 0 volt and lower than the first electric potential to non-selected word lines other than the selected word line, applies a third electric potential which is 0 volt or more and lower than the second electric potential to a non-selected bit line adjacent to the selected bit line in an adjacent cell array block, applies the second electric potential to non-selected bit lines other than the non-selected bit line to which the third electric potential is applied, and changes a resistance status of the resistance variable film of the selected memory cell. | 09-05-2013 |
Patent application number | Description | Published |
20120136122 | PROCESS FOR PRODUCTION OF MODIFIED POLYSILOXANE COMPOUND - A modified polysiloxane compound represented by formula (I): X(Y)n (I), where X represents a polymer block having a repeating unit represented by formula (II), Y represents a polymer block having a repeating unit represented by formula (III), and n represents 1 or 2, and having an X to Y weight ratio of 1/99≦X/Y≦90/10 and a number-average molecular weight of 1,000 to 100,000 is subjected to treat for elimination of a protecting group for a hydroxyl group by adding a non-aqueous solution containing hydrogen chloride in the presence of a non-aqueous solvent so that hydrogen chloride is 0.9 to 1.3 equivalents with respect to 1 equivalent of the repeating unit represented by formula (II). | 05-31-2012 |
20120202910 | METHOD FOR PRODUCING POLYBUTADIENE - An object of the present invention is to provide a method for producing a polybutadiene by anionic polymerization at a low temperature, in which the microstructures thereof is controlled to polybutadienes having diverse physical properties. The present invention provides a method for producing a polybutadiene by anionic polymerization of 1,3-butadiene in the presence of a polymerization initiator and under the conditions of a reaction temperature not higher than the boiling point of butadiene, wherein the polymerization is performed in the presence of a potassium salt in an aprotic polar solvent or in a mixed solvent of an aprotic polar solvent and a nonpolar solvent. The potassium salt is preferably potassium t-butoxide, and the solvent is preferably a mixed solvent of tetrahydrofuran and hexane. The resultant polybutadiene can be used in an adhesive composition and in a plate-making material composition used for flexographic printing plates. | 08-09-2012 |
20140356427 | ORALLY DISINTEGRATING TABLET CONTAINING HYDROXYALKYL CELLULOSE MICROPARTICLES - An orally disintegrating tablet is obtained by dry tabletting a mixture of: hydroxyalkyl cellulose microparticles having a 50% particle size in the cumulative particle size distribution of more than or equal to 15 μm and less than 40 μm, and having a hydroxyalkyl group content of 40 to 80% by mass; a main drug as a pharmaceutical ingredient; and optionally, additives such as an excipient, a binder, a disintegrant, a lubricating agent, an agent for sustained release, a base material, a coloring agent, a pH adjusting agent, a pH buffer agent, a surfactant, a stabilizer, an acidulant, a flavoring agent, a fluidizing agent, a refreshing agent, a sweetener, a savoring component, and a sweetness intensifier. | 12-04-2014 |