Patent application number | Description | Published |
20100232162 | Organic light emitting display apparatus - Provided is an organic light emitting display apparatus in which process efficiency and contrast are increased. The organic light emitting display apparatus includes a substrate, a display unit that is formed on the substrate and includes an organic light emitting device, an encapsulation layer that is formed on the display unit so as to encapsulate the display unit, a color filter layer that is formed on the encapsulation layer, a protection layer that is formed on the color filter layer, and a black matrix that is formed on the protection layer. The black matrix is aligned not to overlap the color filter layer. | 09-16-2010 |
20110042697 | Organic Light Emitting Diode Display - An organic light emitting diode display includes a display substrate including a plurality of organic light emitting diodes, a plurality of color filters on the plurality of organic light emitting diodes respectively corresponding thereto, and a plurality of light scattering particles dispersed in the plurality of color filters. | 02-24-2011 |
20110272715 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE ORGANIC LIGHT EMITTING DISPLAY DEVICE - An organic light-emitting display device and a method of manufacturing the same are disclosed. The organic light-emitting display device includes: a substrate, a plurality of pixels on the substrate, a plurality of first electrodes, each disposed in each of the plurality of pixels, a pixel defining layer including a first pixel defining sub-layer disposed between each two adjacent first electrodes, and a second pixel defining sub-layer covering the first pixel defining sub-layer and surface edge portions of each two adjacent first electrodes, an intermediate layer disposed on each of the first electrodes and including an emission layer, and a second electrode configured to face the first electrodes. | 11-10-2011 |
20120012850 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS - An organic light emitting display apparatus in which image quality can be improved. The organic light emitting display apparatus includes: a substrate; a first electrode disposed on the substrate; a pixel definition layer formed on the first electrode and having an opening portion through which a region of the first electrode is exposed; an intermediate layer connected to the first electrode through the opening portion and including an organic emission layer; a second electrode electrically connected to the intermediate layer; and an inorganic planarization pattern portion disposed between the substrate and the first electrode and formed to at least correspond to the opening portion. | 01-19-2012 |
20120174865 | DEPOSITION SOURCE AND ORGANIC LAYER DEPOSITION APPARATUS INCLUDING THE SAME - A deposition source and an organic layer deposition apparatus that may be simply applied to the manufacture of large-sized display apparatuses on a mass scale and may prevent or substantially prevent deposition source nozzles from being blocked during deposition of a deposition material, thereby improving manufacturing yield and deposition efficiency. A deposition source includes a first deposition source including a plurality of first deposition source nozzles, and a second deposition source including a plurality of second deposition source nozzles wherein the plurality of first deposition source nozzles and the plurality of second deposition source nozzles are tilted toward each other. | 07-12-2012 |
20120299023 | ORGANIC LAYER DEPOSITION APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE BY USING THE SAME - An organic layer deposition apparatus for forming an organic layer on a substrate includes: a deposition source configured to discharge a deposition material; a deposition source nozzle unit arranged at a side of the deposition source and including a plurality of deposition source nozzles; and a patterning slit sheet facing the deposition source nozzle unit and including a plurality of patterning slits and at least one spacer arranged between a pair of adjacent patterning slits of the plurality of patterning slits, the patterning slit sheet being smaller than the substrate in at least one of a first direction or a second direction perpendicular to the first direction, and the substrate is spaced apart from the organic layer deposition apparatus by a predetermined distance, and at least one of the substrate or the organic layer deposition apparatus is movable relative to the other. | 11-29-2012 |
20120320287 | DISPLAY DEVICE - A display device including: an organic light emitting display unit formed on a first substrate, the organic light emitting display unit comprising first and second electrodes facing each other, and an organic emissive layer formed between the first and second electrodes; and a liquid crystal display unit formed on a second substrate facing the first substrate, the liquid crystal display unit configured to operate as a liquid crystal shutter in response to an electrical potential difference, wherein a resonance structure of the organic light emitting display unit enables the liquid crystal display unit to form an image in a color reflected from each pixel of the organic light emitting display unit. | 12-20-2012 |
20140014920 | METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND ORGANIC LIGHT-EMITTING DISPLAY APPARATUS MANUFACTURED BY USING THE METHOD - A method of manufacturing an organic light-emitting display apparatus and an organic light-emitting display apparatus manufactured by using the method. A method of manufacturing an organic light-emitting display apparatus includes continuously depositing an organic layer of a linear pattern on a substrate; depositing a second electrode on the organic layer; and forming a passivation layer on the second electrode to cover the second electrode. | 01-16-2014 |
20140342481 | ORGANIC LAYER DEPOSITION APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS USING THE SAME - An organic layer deposition apparatus and a method of manufacturing an organic light-emitting display device by using the apparatus. In particular, an organic layer deposition apparatus that is more easily manufactured and is suitable for use in mass production of large substrates while performing high-definition patterning thereon, as well as a method of manufacturing an organic light-emitting display device by using such an apparatus. | 11-20-2014 |
Patent application number | Description | Published |
20100246881 | SOUND CONVERTER WITH ENCLOSURE - The present invention discloses a sound converter with an enclosure which utilizes an outer space to expand a resonance space. The sound converter with the enclosure includes a frame being equipped with a magnetic circuit for forming a magnetic field in a predetermined gap, a voice coil at least partially positioned in the gap, a diaphragm adhered to the voice coil and inserted into a diaphragm seating portion of the frame, a protector formed at the upper portion of the diaphragm, and an enclosure case coupled to the frame, for defining the inner space of the enclosure which is the resonance space. A vent is provided at the enclosure case so that the inner space of the enclosure can communicate with the outer space. This configuration can secure a wide resonance space. | 09-30-2010 |
20160021864 | INSECT TRAP USING UV LED LAMP - The present disclosure relates to an insect trap using an ultraviolet light-emitting diode (UV LED) lamp, and more particularly, to an insect trap using, in place of a conventional UV light source lamp, a UV LED lamp that significantly increases the insect trapping efficiency. The insect trap according to the present disclosure includes: a UV LED lamp disposed in an air inlet portion of the duct, and including a printed circuit board (PCB) that has a UV LED chip mounted thereon; an installing portion for installing the UV LED lamp on; and a trapping portion provided near the installing portion. | 01-28-2016 |
20160021865 | INSECT TRAP USING UV LED LAMP - The present disclosure relates to an insect trap using an ultraviolet light-emitting diode (UV LED) lamp, and more particularly, to an insect trap using, in place of a conventional UV light source lamp, a UV LED lamp that significantly increases the insect trapping efficiency. The insect trap according to the present disclosure includes: a duct including a suction fan therein; a UV LED lamp disposed in the air inlet portion of the duct and comprising a printed circuit board (PCB) that has a UV LED chip mounted thereon; and a trapping portion provided in the air outlet portion of the duct. | 01-28-2016 |
Patent application number | Description | Published |
20090110982 | Sensing pipe and fuel cell system using the same - A fuel cell system including a quartz crystal microbalance (QCM) concentration sensor, and in particular, comprising a bypass channel structure useful for installing a QCM concentration sensor to a fuel cell system. The fuel cell system includes a fuel cell stack generating electric energy by an electrochemical reaction of a hydrogen-containing fuel and an oxidant, a fuel cell including a fuel supplying unit supplying the hydrogen-containing fuel to the fuel cell stack, a QCM concentration sensing unit for measuring the concentration of a fluid in the fuel cell, and a drive controlling unit for controlling the operation of the fuel cell according to an output of the QCM concentration sensing unit. | 04-30-2009 |
20090110983 | FUEL CELL SYSTEM - A fuel cell system including a correction means capable of accurately correcting a concentration sensing value according to temperature is discussed. The fuel cell system may include an electricity generating unit generating electric energy by means of the electrochemical reaction of fuel and an oxidizer, a fuel supplying unit supplying the fuel to the electricity generating unit, a main concentration sensor for measuring the concentration of the fuel, a reference cell filled with reference solution and including a reference concentration sensor for measuring the concentration of the reference solution, and/or a drive controlling unit controlling the operation of the electricity generating unit based on the concentration values measured in the main concentration sensor and the reference concentration sensor. | 04-30-2009 |
20090236976 | ORGANIC LIGHT EMITTING DISPLAY DEVICE - An organic light emitting display device includes a substrate, a display unit that is formed on the substrate, and includes a plurality of organic light emitting regions that emit light, a sealing member disposed above the display unit, and one or more light absorption pattern units formed on a plurality of non-light emitting regions of the display unit. | 09-24-2009 |
20090279177 | FLAT PANEL DISPLAY APPARATUS - A flat panel display apparatus including a display unit, a cover covering the display unit, and a film disposed on the cover. The film has one or more protrusions, each having a reflective first surface and a transparent second surface. The first surface can include a coating. The second surface transmits light from the display unit, at a first angle, and the second surface reflects external light at a second angle. | 11-12-2009 |
20100090224 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAVING THE THIN FILM TRANSISTOR - A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device having the TFT, the TFT includes a substrate, a protection layer disposed on the substrate, a buffer layer disposed on the protection layer, a semiconductor layer disposed on the buffer layer, a gate electrode disposed on the semiconductor layer, a gate insulating layer to electrically insulate the semiconductor layer from the gate electrode, and source and drain electrodes electrically insulated from the gate electrode and connected to the semiconductor layer. The protection layer is formed of an amine-containing clay. The OLED includes the TFT, an insulating layer disposed on the TFT, a first electrode connected to the drain electrode of the TFT, an organic layer disposed on the first electrode, and a second electrode disposed on the organic layer. | 04-15-2010 |
20140361378 | SEMICONDUCTOR DEVICE HAVING STRAIN-RELAXED BUFFER LAYER AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a substrate, a strain-relaxed buffer layer on the substrate, at least one well in the strain-relaxed buffer layer, a first channel layer on the strain-relaxed buffer layer, and a second channel layer on the well. A lattice constant of material constituting the first well is less than a lattice constant of the material constituting the strain-relaxed buffer layer, but a lattice constant of material constituting the second well is greater than the lattice constant of the material constituting the strain-relaxed buffer layer. | 12-11-2014 |
20150093867 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes preparing a substrate in which a first active region and a second active region are defined by a device isolation region, forming a channel region in the first active region and the second active region, respectively, forming a gate insulating layer on the first active region and a gate insulating layer on the second active region, a thickness of the gate insulating layer on the first active region being different from a thickness of the gate insulating layer on the second active region, and forming a first interface layer between the substrate and the gate insulating layer on the first active region and a second interface layer between the substrate and the gate insulating layer on the second active region. | 04-02-2015 |
20160104705 | SEMICONDUCTOR DEVICE INCLUDING FINFETS HAVING DIFFERENT GATE STRUCTURES AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate having a logic device region including logic devices thereon, and an input/output (I/O) device region including I/O devices thereon adjacent the logic device region. A first fin field-effect transistor (FinFET) on the logic device region includes a first semiconductor fin protruding from the substrate, and a triple-gate structure having a first gate dielectric layer and a first gate electrode thereon. A second FinFET on the I/O device region includes a second semiconductor fin protruding from the substrate, and a double-gate structure having a second gate dielectric layer and a second gate electrode thereon. The first and second gate dielectric layers have different thicknesses. Related devices and fabrication methods are also discussed. | 04-14-2016 |
Patent application number | Description | Published |
20140264572 | METHODS OF FORMING SEMICONDUCTOR DEVICES USING HARD MASK LAYERS - A method of forming a semiconductor structure can include forming a photolithography mask on a silicon fin having a hard mask layer thereon extending in a first direction. A trench can be formed through the hard mask layer into the silicon fin using the photolithography mask, where the trench extends in a second direction to separate the silicon fin into first and second fin structures extending end-to-end in the first direction. A portion of the trench formed by the hard mask layer can be widened relative to a lower portion of the trench defined by the first and second fin structures. | 09-18-2014 |
20140357061 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - Provided are a semiconductor device and a method for fabricating the same. The method for fabricating a semiconductor device comprises, providing an active fin and a field insulating film including a first trench disposed on the active fin; forming a second trench through performing first etching of the field insulating film that is disposed on side walls and a lower portion of the first trench; forming a first region and a second region in the field insulating film through performing second etching of the field insulating film that is disposed on side walls and a lower portion of the second trench, the first region is disposed adjacent to the active fin and has a first thickness, and the second region is disposed spaced apart from the active fin as compared with the first region and has a second thickness that is thicker than the first thickness; and forming a gate structure on the active fin and the field insulating film. | 12-04-2014 |
20150037956 | MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE - Provided is a manufacturing method of a semiconductor device including providing a substrate including a first region and a second region, forming active fins in the first region and the second region, forming gate electrodes which intersect the active fins and have surfaces facing side surfaces of the active fins, forming an off-set zero (OZ) insulation layer covering the active fins, forming a first residual etch stop layer and a first hard mask pattern which cover the first region, injecting first impurities into the active fins of the second region, removing the first hard mask pattern and the first residual etch stop layer, forming second residual etch stop layer and a second hard mask pattern which cover the second region, injecting a second impurities into the active fins of the first region, and removing the second residual etch stop layer and the second hard mask pattern. | 02-05-2015 |
20160020318 | Semiconductor Device and Method for Fabricating the Same - Provided are a semiconductor device and a method for fabricating the same. The method for fabricating a semiconductor device comprises, providing an active fin and a field insulating film including a first trench disposed on the active fin; forming a second trench through performing first etching of the field insulating film that is disposed on side walls and a lower portion of the first trench; forming a first region and a second region in the field insulating film through performing second etching of the field insulating film that is disposed on side walls and a lower portion of the second trench, the first region is disposed adjacent to the active fin and has a first thickness, and the second region is disposed spaced apart from the active fin as compared with the first region and has a second thickness that is thicker than the first thickness; and forming a gate structure on the active fin and the field insulating film. | 01-21-2016 |