Patent application number | Description | Published |
20090108392 | SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE - In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a semiconductor device includes a plurality of rectilinear structures, wherein the plurality of rectilinear structures comprise silicon dioxide and extend from a surface of a semiconductor material to a distance of at least about three microns or greater below the surface of the semiconductor material and wherein a first rectilinear structure of the plurality of rectilinear structures is perpendicular to, or substantially perpendicular to, a second rectilinear structure of the plurality of rectilinear structures. Other embodiments are described and claimed. | 04-30-2009 |
20100032750 | Power Semiconductor Device And Method Therefor - A power transistor includes a plurality of transistor cells. Each transistor cell has a first electrode coupled to a first electrode interconnection region overlying a first major surface, a control electrode coupled to a control electrode interconnection region overlying the first major surface, and a second electrode coupled to a second electrode interconnection region overlying a second major surface. Each transistor cell has an approximately constant doping concentration in the channel region. A dielectric platform is used as an edge termination of an epitaxial layer to maintain substantially planar equipotential lines therein. The power transistor finds particular utility in radio frequency applications operating at a frequency greater than 500 megahertz and dissipating more than 5 watts of power. The semiconductor die and package are designed so that the power transistor can efficiently operate under such severe conditions. | 02-11-2010 |
20100090269 | TRANSISTOR STRUCTURE HAVING A TRENCH DRAIN - A semiconductor device is formed having a trench adjacent to a current carrying region of the device. The trench is formed having a depth greater than the depth of a tub region of the device. Increasing the trench depth moves a region of higher field strength from the tub region to a region along the trench. The region along the trench does not have a junction and may withstand the higher field strength. | 04-15-2010 |
20100090272 | TRANSISTOR STRUCTURE HAVING A CONDUCTIVE LAYER FORMED CONTIGUOUS IN A SINGLE DEPOSITION - A semiconductor device is formed having a pedestal. The pedestal includes at least two dielectric layers. The pedestal has a sidewall and a major surface. A conductive layer is formed overlying the pedestal. A vertical portion of the conductive layer adjacent to the sidewall of the pedestal is a gate of the transistor. The portion of the conductive layer overlying the major surface can be used as interconnect. The gate and gate interconnect are contiguous and formed in a single process. A conductive shield layer may be integrated into the pedestal. The conductive shield layer functions as a faraday shield that reduces gate to drain capacitance of the device. | 04-15-2010 |
20100090273 | TRANSISTOR STRUCTURE HAVING DUAL SHIELD LAYERS - A semiconductor device is formed having lower gate to drain capacitance. A trench ( | 04-15-2010 |
20100090275 | TRANSISTOR STRUCTURE HAVING AN ACTIVE REGION AND A DIELECTRIC PLATFORM REGION - A semiconductor device is formed having lower gate-to-drain capacitance. The semiconductor device having an active region ( | 04-15-2010 |
20100090291 | TRANSISTOR STRUCTURE HAVING REDUCED INPUT CAPACITANCE - A semiconductor device having reduced input capacitance is disclosed. The semiconductor device includes a pedestal region having a gate overlying a sidewall of the pedestal region and gate interconnect overlying a major surface of the pedestal region. The pedestal region includes a conductive shield layer ( | 04-15-2010 |
20100103578 | ELECTRICAL STRESS PROTECTION APPARATUS AND METHOD OF MANUFACTURE - In various embodiments, circuits and semiconductor devices and structures and methods to manufacture these structures and devices are disclosed. In one embodiment, a bidirectional polarity, voltage transient protection device is disclosed. The voltage transient protection device may include a bipolar PNP transistor having a turn-on voltage of V | 04-29-2010 |
20110045664 | TRANSISTOR STRUCTURE HAVING A TRENCH DRAIN - A semiconductor device is formed having a trench adjacent to a current carrying region of the device. The trench is formed having a depth greater than the depth of a tub region of the device. Increasing the trench depth moves a region of higher field strength from the tub region to a region along the trench. The region along the trench does not have a junction and may withstand the higher field strength. | 02-24-2011 |
20120285317 | RIFLE - A rifle with an upper receiver and a barrel attached to the upper receiver and including a bolt carrier, and operating, buffer, and cooling systems. The operating system includes a cylinder and a piston coupled to receive propelling gases from the barrel. As the piston moves between retracted and extended positions the bolt carrier is moved between closed and open positions. The bolt carrier includes a weight movable within a guide frame between rearward and forward limits. The buffer system includes a compression spring in a tube attached to the upper receiver in abutting engagement with the bolt carrier. A partially fluid filled cylinder is attached to a coil of the spring and includes a piston and shaft. The piston is formed so that fluid in the cylinder restricts movement in one direction and allows free movement in a second direction. | 11-15-2012 |
20130034952 | TRANSISTOR STRUCTURE HAVING A TRENCH DRAIN - A semiconductor device is formed having a trench adjacent to a current carrying region of the device. The trench is formed having a depth greater than the depth of a tub region of the device. Increasing the trench depth moves a region of higher field strength from the tub region to a region along the trench. The region along the trench does not have a junction and may withstand the higher field strength. | 02-07-2013 |
20130328132 | POWER SEMICONDUCTOR DEVICE AND METHOD THEREFOR - A power transistor includes a plurality of transistor cells. Each transistor cell has a first electrode coupled to a first electrode interconnection region overlying a first major surface, a control electrode coupled to a control electrode interconnection region overlying the first major surface, and a second electrode coupled to a second electrode interconnection region overlying a second major surface. Each transistor cell has an approximately constant doping concentration in the channel region. A dielectric platform is used as an edge termination of an epitaxial layer to maintain substantially planar equipotential lines therein. The power transistor finds particular utility in radio frequency applications operating at a frequency greater than 500 megahertz and dissipating more than 5 watts of power. The semiconductor die and package are designed so that the power transistor can efficiently operate under such severe conditions. | 12-12-2013 |
20140035114 | SEMICONDUCTOR PACKAGE STRUCTURE AND METHOD - In one embodiment, a semiconductor package structure includes a substrate having a well region extending from a major surface. An interposer structure is attached to the substrate within the well region. The interposer structure has a major surface that is substantially co-planar with the major surface of the substrate. An electrical device is directly attached to the substrate and the interposer structure. The interposer structure can be an active device, such as a gate driver integrated circuit, or passive device structure, such as an impedance matching network. | 02-06-2014 |
20140183623 | TRANSISTOR STRUCTURE HAVING A TRENCH DRAIN - A semiconductor device is formed having a trench adjacent to a current carrying region of the device. The trench is formed having a depth greater than the depth of a tub region of the device. Increasing the trench depth moves a region of higher field strength from the tub region to a region along the trench. The region along the trench does not have a junction and may withstand the higher field strength. | 07-03-2014 |