Patent application number | Description | Published |
20080241598 | MAGNETIC RANDOM ACCESS MEMORY HAVING MAGNETORESISTIVE ELEMENT WITH NONMAGNETIC METAL LAYER - A magnetic random access memory in which a plurality of magnetoresistive elements are laid out in an array, the magnetoresistive element includes a lower ferromagnetic layer, an upper ferromagnetic layer which has a planar shape smaller than a planar shape of the lower ferromagnetic layer, a first nonmagnetic insulating layer which is formed between the lower ferromagnetic layer and the upper ferromagnetic layer, and a first nonmagnetic metal layer which is formed between the first nonmagnetic insulating layer and the upper ferromagnetic layer. | 10-02-2008 |
20080261331 | MRAM AND METHOD OF MANUFACTURING THE SAME - A magnetic memory device comprising, a magneto-resistance effect element that is provided at an intersection between a first write line and a second write line. And the magneto-resistance effect element having, an easy axis that extends in a direction of extension of the first write line, and a first conductive layer for electrical connection to the magneto-resistance effect element, the first conductive layer having sides which are in flush with sides of the magneto-resistance effect element. | 10-23-2008 |
20080315291 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A nonvolatile semiconductor memory device has a plurality of memory strings each including a plurality of electrically rewritable memory cells serially connected. The memory string includes a columnar semiconductor portion extending in the vertical direction from a substrate, a first charge storage layer formed adjacent to the columnar semiconductor portion and configured to accumulate charge, a first block insulator formed adjacent to the first charge storage layer, and a first conductor formed adjacent to the first block insulator. | 12-25-2008 |
20080315296 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A non-volatile semiconductor storage device | 12-25-2008 |
20090090965 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A non-volatile semiconductor storage device has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series. Each of the memory strings includes: a memory columnar semiconductor extending in a direction perpendicular to a substrate; a tunnel insulation layer contacting the memory columnar semiconductor; a charge accumulation layer contacting the tunnel insulation layer and accumulating charges; a block insulation layer contacting the charge accumulation layer; and a plurality of memory conductive layers contacting the block insulation layer. The lower portion of the charge accumulation layer is covered by the tunnel insulation layer and the block insulation layer. | 04-09-2009 |
20090108333 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A non-volatile semiconductor storage device has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series. Each of the memory strings includes: a first columnar semiconductor layer extending in a direction perpendicular to a substrate; a charge accumulation layer formed on the first columnar semiconductor layer via a first air gap and accumulating charges; a block insulation layer contacting the charge accumulation layer; and a plurality of first conductive layers contacting the block insulation layer. | 04-30-2009 |
20090140358 | MAGNETORESISTIVE ELEMENT - A magnetoresistive element includes a first ferromagnetic layer having a first magnetization, the first magnetization having a first pattern when the magnetoresistive element is half-selected during a first data write, a second pattern when the magnetoresistive element is selected during a second data write, and a third pattern of residual magnetization, the first pattern being different from the second and third pattern, a second ferromagnetic layer having a second magnetization, and a nonmagnetic layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and having a tunnel conductance changing dependent on a relative angle between the first magnetization and the second magnetization. | 06-04-2009 |
20090146206 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A non-volatile semiconductor storage device has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series. Each of the memory strings includes: a first columnar semiconductor layer extending in a direction perpendicular to a substrate and having a first hollow extending downward from its upper end; a first insulation layer formed in contact with the outer wall of the first columnar semiconductor layer; a second insulation layer formed on the inner wall of the first columnar semiconductor layer so as to leave the first hollow; and a plurality of first conductive layers formed to sandwich the first insulation layer with the first columnar semiconductor layer and functioning as control electrodes of the memory cells. | 06-11-2009 |
20090179257 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A non-volatile semiconductor memory device includes a first columnar semiconductor layer and a plurality of first conductive layers formed such that a charge storage layer for storing charges is sandwiched between the first conductive layers and the first columnar semiconductor layer. Also, the non-volatile semiconductor memory device includes a second columnar semiconductor layer and a second conductive layer formed such that an insulating layer is sandwiched between the second conductive layer and the second columnar semiconductor layer, the second conductive layer being repeatedly provided in a line form by providing a certain interval in a first direction perpendicular to a laminating direction. A first sidewall conductive layer being in contact with the second conductive layer and extending in the first direction is formed on a sidewall along a longitudinal direction of the second conductive layer. | 07-16-2009 |
20090212350 | NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A nonvolatile semiconductor storage device has a plurality of memory strings in which a plurality of electrically rewritable memory cells are connected in series. The memory string has a columnar semiconductor layer extending in a direction perpendicular to a substrate; a conductive layer formed so as to sandwich a charge storing layer in cooperation with the columnar semiconductor layer; and a metal layer formed so as to be in contact with the top face of the conductive layer. | 08-27-2009 |
20090230458 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A non-volatile semiconductor storage device has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series. Each of the memory strings includes: a columnar semiconductor layer extending in a direction perpendicular to a substrate; a plurality of conductive layers formed at a sidewall of the columnar semiconductor layer via memory layers; and interlayer insulation layers formed above of below the conductive layers. A sidewall of the conductive layers facing the columnar semiconductor layer is formed to be inclined such that the distance thereof from a central axis of the columnar semiconductor layer becomes larger at lower position thereof than at upper position thereof. While, a sidewall of the interlayer insulation layers facing the columnar semiconductor layer is formed to be inclined such that the distance thereof from a central axis of the columnar semiconductor layer becomes smaller at lower position thereof than at upper position thereof. | 09-17-2009 |
20090230459 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A non-volatile semiconductor memory device includes a memory string which is electrically rewritable and includes a plurality of memory cells connected in series. The memory string includes a plurality of first conductive layers which are extended parallel to a substrate and laminated; a first semiconductor layer which is formed so as to pass through the plurality of the first conductive layers; and an electric charge accumulation layer which is formed between the first conductive layer and the first semiconductor layer and is configured so as to be able to accumulate electric charge. The first conductive layer is configured by material smaller in work function than P | 09-17-2009 |
20090230462 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - Each of the memory strings includes: a first columnar semiconductor layer extending in a vertical direction to a substrate; a plurality of first conductive layers formed to sandwich an insulation layer with a charge trap layer and expand in a two-dimensional manner; a second columnar semiconductor layer formed in contact with the top surface of the first columnar semiconductor layer and extending in a vertical direction to the substrate; and a plurality of second conductive layers formed to sandwich an insulation layer with the second columnar semiconductor layer and formed in a stripe pattern extending in a first direction orthogonal to the vertical direction. Respective ends of the plurality of first conductive layers in the first direction are formed in a stepwise manner in relation to each other, entirety of the plurality of the second conductive layers are formed in an area immediately above the top layer of the first conductive layers, and the plurality of first conductive layers and the plurality of second conductive layers are covered with a protection insulation layer that is formed continuously with the plurality of first conductive layers and the second conductive layers. | 09-17-2009 |
20090242967 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A non-volatile semiconductor storage device has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series. Each of the memory strings comprises: a first columnar semiconductor layer extending in a vertical direction to a substrate; a charge accumulation layer formed around the first columnar semiconductor layer via a first insulation layer; and a first conductive layer formed around the charge accumulation layer via a second insulation layer. Each of the first conductive layers is formed to expand in a two-dimensional manner, and air gaps are formed between the first conductive layers located there above and there below. | 10-01-2009 |
20090267135 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A non-volatile semiconductor storage device includes a first layer and a second layer. The first layer includes: a plurality of first conductive layers extending in parallel to a substrate and laminated in a direction perpendicular to the substrate; a first insulation layer formed on an upper layer of the plurality of first conductive layers; a first semiconductor layer formed to penetrate the plurality of first conductive layers; and a charge accumulation layer formed between the first conductive layers and the first semiconductor layer. Respective ends of the first conductive layers are formed in a stepwise manner in relation to each other in a first direction. The second layer includes: a plurality of second conductive layers extending in parallel to the substrate and laminated in a direction perpendicular to the substrate, the second conductive layers being formed in the same layer as the plurality of first conductive layers; and a second insulation layer formed on an upper layer of the plurality of second conductive layers. Respective ends of the second conductive layers are formed to align along a straight line extending in a direction substantially perpendicular to the substrate at a predetermined area. | 10-29-2009 |
20090294844 | SEMICONDUCTOR DEVICE - A semiconductor device has a substrate, a source region formed on the surface portion of the substrate, a first insulating layer formed on the substrate, a gate electrode formed on the first insulating layer, a second insulating layer formed on the gate electrode, a body section connected with the source region, penetrating through the first insulating layer, the gate electrode and the second insulating layer, and containing a void, a gate insulating film surrounding the body section, and formed between the body section and the gate electrode, and a drain region connected with the body section. | 12-03-2009 |
20100006922 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - The invention provides a nonvolatile semiconductor memory device comprising a plurality of memory strings each including a plurality of electrically programmable memory cells connected in series. The memory string includes a semiconductor pillar, an insulator formed around the circumference of the semiconductor pillar, and first through nth electrodes to be turned into gate electrodes (n denotes a natural number equal to 2 or more) formed around the circumference of the insulator. It also includes interlayer electrodes formed in regions between the first through nth electrodes around the circumference of the insulator. | 01-14-2010 |
20100038703 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE - A memory string has a semiconductor layer with a joining portion that is formed to join a plurality of columnar portions extending in a vertical direction with respect to a substrate and lower ends of the plurality of columnar portions. First conductive layers are formed in a laminated fashion to surround side surfaces of the columnar portions and an electric charge storage layer, and function as control electrodes of memory cells. A second conductive layer is formed around the plurality of columnar portions via a gate insulation film, and functions as control electrodes of selection transistors. Bit lines are formed to be connected to the plurality of columnar portions, respectively, with a second direction orthogonal to a first direction taken as a longitudinal direction. | 02-18-2010 |
20100072538 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A nonvolatile semiconductor memory device includes a plurality of memory strings, each of which has a plurality of electrically rewritable memory cells connected in series; and select transistors, one of which is connected to each of ends of each of the memory strings. Each of the memory strings is provided with a first semiconductor layer having a pair of columnar portions extending in a perpendicular direction with respect to a substrate, and a joining portion formed so as to join lower ends of the pair of columnar portions; a charge storage layer formed so as to surround a side surface of the columnar portions; and a first conductive layer formed so as to surround the side surface of the columnar portions and the charge storage layer, and configured to function as a control electrode of the memory cells. Each of the select transistors is provided with a second semiconductor layer extending upwardly from an upper surface of the columnar portions; and a second conductive layer formed so as to surround a side surface of the second semiconductor layer with a gap interposed, and configured to function as a control electrode of the select transistors. | 03-25-2010 |
20100096682 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A non-volatile semiconductor storage device has a memory string including a plurality of electrically rewritable memory cells connected in series. The non-volatile semiconductor storage device also has a protruding layer formed to protrude upward with respect to a substrate. The memory string includes: a plurality of first conductive layers laminated on the substrate; a first semiconductor layer formed to penetrate the plurality of first conductive layers; and an electric charge storage layer formed between the first conductive layers and the first semiconductor layer, and configured to be able to store electric charges. Each of the plurality of first conductive layers includes: a bottom portion extending in parallel to the substrate; and a side portion extending upward with respect to the substrate along the protruding layer at the bottom portion. The protruding layer has a width in a first direction parallel to the substrate that is less than or equal to its length in a lamination direction. | 04-22-2010 |
20100117047 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A non-volatile semiconductor storage device includes a plurality of memory element groups, each of the memory element groups having a plurality of memory elements, each of the memory elements having a resistance-change element and a Schottky diode connected in series. Each of the memory element groups includes: a first columnar layer extending in a lamination direction; a first insulation layer formed on a side surface of the first columnar layer and functioning as the resistance-change element; and a first conductive layer formed to surround the first columnar layer via the first insulation layer. The first conductive layer is formed of metal. The first columnar layer is formed of a semiconductor having such a impurity concentration that the first conductive layer and the semiconductor configure the Schottky diode. | 05-13-2010 |
20100117137 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - Each of memory strings is provided with a first semiconductor layer having a pair of columnar portions extending in a perpendicular direction with respect to a substrate; a charge storage layer formed to surround a side surface of the columnar portions; and a first conductive layer formed to surround the charge storage layer. Each of the select transistors is provided with a second semiconductor layer extending upwardly from an upper surface of the columnar portions; a gate insulating layer formed to surround a side surface of the second semiconductor layer; and a second conductive layer formed to surround the gate insulating layer. An effective impurity concentration of the second semiconductor layer is less than or equal to an effective impurity concentration of the first semiconductor layer. | 05-13-2010 |
20100148237 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A non-volatile semiconductor storage device includes a plurality of memory strings each having a plurality of electrically rewritable memory cells connected in series. Each of the memory strings comprising: a first semiconductor layer including a columnar portion extending in a vertical direction with respect to a substrate; a plurality of first conductive layers formed to surround side surfaces of the columnar portions via insulation layers, and formed at a certain pitch in the vertical direction, the first conductive layers functioning as floating gates of the memory cells; and a plurality of second conductive layers formed to surround the first conductive layers via insulation layers, and functioning as control electrodes of the memory cells. Each of the first conductive layers has a length in the vertical direction that is shorter than a length in the vertical direction of each of the second conductive layers. | 06-17-2010 |
20100171162 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - Each of memory strings comprising: a first semiconductor layer having a pair of columnar portions extending in a vertical direction to a substrate and a joining portion formed to join lower ends of the pair of columnar portions; an electric charge accumulation layer formed to surround a side surface of the first semiconductor layer; and a first conductive layer formed to surround a side surface of the electric charge accumulation layer. The columnar portions are aligned at a first pitch in a first direction orthogonal to the vertical direction, and arranged in a staggered pattern at a second pitch in a second direction orthogonal to the vertical and first directions. The first conductive layers are configured to be arranged at the first pitch in the first direction, and extend to curve in a wave-like fashion in the second direction along the staggered-pattern arrangement. | 07-08-2010 |
20100207195 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A non-volatile semiconductor storage device has a plurality of memory strings to each of which a plurality of electrically rewritable memory cells are connected in series. Each of the memory strings includes first semiconductor layers each having a pair of columnar portions extending in a vertical direction with respect to a substrate and a coupling portion formed to couple the lower ends of the pair of columnar portions; a charge storage layer formed to surround the side surfaces of the columnar portions; and first conductive layers formed to surround the side surfaces of the columnar portions and the charge storage layer. The first conductive layers functions as gate electrodes of the memory cells. | 08-19-2010 |
20100213537 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A memory string comprises: a pair of columnar portions; a first insulating layer surrounding a side surface of the columnar portions; a charge storage layer surrounding a side surface of the first insulating layer; a second insulating layer surrounding a side surface of the charge storage layer; and a first conductive layer surrounding a side surface of the second insulating layer. A select transistor comprises: a second semiconductor layer extending from an upper surface of the columnar portions; a third insulating layer surrounding a side surface of the second semiconductor layer; a fourth insulating layer surrounding a side surface of the third insulating layer; and a second conductive layer surrounding a side surface of the fourth insulating layer. The first semiconductor layer is formed continuously in an integrated manner with the second semiconductor layer. The first insulating layer is formed continuously in an integrated manner with the third insulating layer. | 08-26-2010 |
20100213538 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A memory string comprises: a first semiconductor layer having a plurality of columnar portions extending in a perpendicular direction with respect to a substrate, and joining portions joining lower ends of the plurality of columnar portions; a charge storage layer surrounding a side surface of the first semiconductor layer; and a first conductive layer surrounding a side surface of the charge storage layer and functioning as a control electrode of memory cells. A select transistor comprises: a second semiconductor layer extending upwardly from an upper surface of the columnar portions; an insulating layer surrounding a side surface of the second semiconductor layer; a second conductive layer surrounding a side surface of the insulating layer and functioning as a control electrode of the select transistors; and a third semiconductor layer formed on an upper surface of the second semiconductor layer and including silicon germanium. | 08-26-2010 |
20100219465 | SEMICONDUCTOR DEVICE - A semiconductor device has a substrate, a source region formed on the surface portion of the substrate, a first insulating layer formed on the substrate, a gate electrode formed on the first insulating layer, a second insulating layer formed on the gate electrode, a body section connected with the source region, penetrating through the first insulating layer, the gate electrode and the second insulating layer, and containing a void, a gate insulating film surrounding the body section, and formed between the body section and the gate electrode, and a drain region connected with the body section. | 09-02-2010 |
20110013454 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device comprises: a plurality of first memory strings; a first select transistor having one end thereof connected to one end of the first memory strings; a first line commonly connected to the other end of a plurality of the first select transistors; a switch circuit having one end thereof connected to the first line; and a second line commonly connected to the other end of a plurality of the switch circuits. The switch circuit controls electrical connection between the second line and the first line. | 01-20-2011 |
20110033995 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A non-volatile semiconductor storage device has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series. Each of the memory strings comprises: a first columnar semiconductor layer extending in a vertical direction to a substrate; a charge accumulation layer formed around the first columnar semiconductor layer via a first insulation layer; and a first conductive layer formed around the charge accumulation layer via a second insulation layer. Each of the first conductive layers is formed to expand in a two-dimensional manner, and air gaps are formed between the first conductive layers located there above and there below. | 02-10-2011 |
20110049608 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A memory string comprises: a first semiconductor layer including a columnar portion extending in a stacking direction on a substrate; a first charge storage layer surrounding the columnar portion; and a plurality of first conductive layers stacked on the substrate so as to surround the first charge storage layer. A select transistor comprises: a second semiconductor layer in contact with an upper surface of the columnar portion and extending in the stacking direction; a second charge storage layer surrounding the second semiconductor layer; and a second conductive layer deposited above the first conductive layer to surround the second charge storage layer. The second charge storage layer is formed from a layer downward of the second conductive layer to an upper end vicinity of the second conductive layer, and is not formed in a layer upward of the upper end vicinity. | 03-03-2011 |
20110069552 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF DATA READ THEREIN - A nonvolatile semiconductor memory device comprises: a memory cell array having a plurality of memory strings each having a plurality of memory cells connected in series; and a control circuit configured to execute a read operation for reading data from the memory cells included in a selected memory string from among the plurality of memory strings. During the read operation, the control circuit is configured to apply a first voltage to a gate of at least one of the memory cells in a non-selected memory string not subject to the read operation, and apply a second voltage lower than the first voltage to a gate of another of the memory cells in the non-selected memory string not subject to the read operation. | 03-24-2011 |
20110075481 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device comprises: a bit line; a source line; a memory string having a plurality of electrically data-rewritable memory transistors connected in series; a first select transistor provided between one end of the memory string and the bit line; a second select transistor provided between the other end of the memory string and the source line; and a control circuit configured to control a read operation. A plurality of the memory strings connected to one bit line via a plurality of the first select transistors. During reading of data from a selected one of the memory strings, the control circuit renders conductive the first select transistor connected to an unselected one of the memory strings and renders non-conductive the second select transistor connected to unselected one of the memory strings. | 03-31-2011 |
20110084331 | SEMICONDUCTOR DEVICE - A semiconductor device has a substrate, a source region formed on the surface portion of the substrate, a first insulating layer formed on the substrate, a gate electrode formed on the first insulating layer, a second insulating layer formed on the gate electrode, a body section connected with the source region, penetrating through the first insulating layer, the gate electrode and the second insulating layer, and containing a void, a gate insulating film surrounding the body section, and formed between the body section and the gate electrode, and a drain region connected with the body section. | 04-14-2011 |
20110111579 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A non-volatile semiconductor storage device has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series. Each of the memory strings includes: a memory columnar semiconductor extending in a direction perpendicular to a substrate; a tunnel insulation layer contacting the memory columnar semiconductor; a charge accumulation layer contacting the tunnel insulation layer and accumulating charges; a block insulation layer contacting the charge accumulation layer; and a plurality of memory conductive layers contacting the block insulation layer. The lower portion of the charge accumulation layer is covered by the tunnel insulation layer and the block insulation layer. | 05-12-2011 |
20110235421 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, in the case of performing an operation for increasing a threshold voltage of a first transistor or a third transistor, a control circuit is configured to apply a first voltage to a bit line, and apply a second voltage greater than the first voltage to a gate of a second transistor, thereby rendering the second transistor in a conductive state to transfer the first voltage to a second semiconductor layer, and then apply a program voltage to a gate of the first transistor or the third transistor to store a charge in a second charge storage layer. | 09-29-2011 |
20110235436 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device according to one embodiment of the present invention includes a dielectric film configured to store information depending on presence or absence of a conductive path therein, and a plurality of electrodes provided to contact a first surface of the dielectric film. The conductive path can be formed between two electrodes arbitrarily selected form the plurality of electrodes. The conductive path has a rectifying property of allowing a current to flow more easily in a first direction connecting arbitrary two electrodes than in a second direction opposite to the first direction. The largest possible number of the conductive paths that may be formed is larger than the number of the plurality of electrodes. | 09-29-2011 |
20110284947 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A nonvolatile semiconductor memory device that have a new structure are provided, in which memory cells are laminated in a three dimensional state so that the chip area may be reduced. The nonvolatile semiconductor memory device of the present invention is a nonvolatile semiconductor memory device that has a plurality of the memory strings, in which a plurality of electrically programmable memory cells is connected in series. The memory strings comprise a pillar shaped semiconductor; a first insulation film formed around the pillar shaped semiconductor; a charge storage layer formed around the first insulation film; the second insulation film formed around the charge storage layer; and first or nth electrodes formed around the second insulation film (n is natural number more than 1). The first or nth electrodes of the memory strings and the other first or nth electrodes of the memory strings are respectively the first or nth conductor layers that are spread in a two dimensional state. | 11-24-2011 |
20110287597 | Nonvolatile semicondutor memory device and manufacturing method thereof - A nonvolatile semiconductor memory device that have a new structure are provided, in which memory cells are laminated in a three dimensional state so that the chip area may be reduced. The nonvolatile semiconductor memory device of the present invention is a nonvolatile semiconductor memory device that has a plurality of the memory strings, in which a plurality of electrically programmable memory cells is connected in series. The memory strings comprise a pillar shaped semiconductor; a first insulation film formed around the pillar shaped semiconductor; a charge storage layer formed around the first insulation film; the second insulation film formed around the charge storage layer; and first or nth electrodes formed around the second insulation film (n is natural number more than 1). The first or nth electrodes of the memory strings and the other first or nth electrodes of the memory strings are respectively the first or nth conductor layers that are spread in a two dimensional state. | 11-24-2011 |
20120008400 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A non-volatile semiconductor storage device includes: a memory string; a select transistor; and a carrier selection element. The select transistor has one end connected to one end of the memory string. The carrier selection element has one end connected to the other end of the select transistor, and selects a majority carrier flowing through respective bodies of the memory transistors and the select transistor. The carrier selection element includes: a third semiconductor layer; a metal layer; a second gate insulation layer; and a third conductive layer. The metal layer extends in the vertical direction. The metal layer extends in the vertical direction from the top of the third semiconductor layer. The second gate insulation layer surrounds the third semiconductor layer and the metal layer. The third conductive layer surrounds the third semiconductor layer and the metal layer via the second gate insulation layer and extends in a parallel direction. | 01-12-2012 |
20120135593 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A nonvolatile semiconductor memory device includes a plurality of memory strings, each of which has a plurality of electrically rewritable memory cells connected in series; and select transistors, one of which is connected to each of ends of each of the memory strings. Each of the memory strings is provided with a first semiconductor layer having a pair of columnar portions extending in a perpendicular direction with respect to a substrate, and a joining portion formed so as to join lower ends of the pair of columnar portions; a charge storage layer formed so as to surround a side surface of the columnar portions; and a first conductive layer formed so as to surround the side surface of the columnar portions and the charge storage layer, and configured to function as a control electrode of the memory cells. Each of the select transistors is provided with a second semiconductor layer extending upwardly from an upper surface of the columnar portions; and a second conductive layer formed so as to surround a side surface of the second semiconductor layer with a gap interposed, and configured to function as a control electrode of the select transistors. | 05-31-2012 |
20120135595 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A non-volatile semiconductor storage device has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series. Each of the memory strings includes: a first columnar semiconductor layer extending in a direction perpendicular to a substrate; a charge accumulation layer formed on the first columnar semiconductor layer via a first air gap and accumulating charges; a block insulation layer contacting the charge accumulation layer; and a plurality of first conductive layers contacting the block insulation layer. | 05-31-2012 |
20120181602 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a semiconductor memory device includes a semiconductor substrate, memory cell array portion, single-crystal semiconductor layer, and circuit portion. The memory cell array portion is formed on the semiconductor substrate, and includes memory cells. The semiconductor layer is formed on the memory cell array portion, and connected to the semiconductor substrate by being formed in a hole extending through the memory cell array portion. | 07-19-2012 |
20120241846 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a nonvolatile semiconductor memory device comprises a first conductive layer, a second conductive layer, a first inter-electrode insulating film, and a third conductive layer stacked above the first conductive layer, a memory film, a semiconductor layer, an insulating member, and a silicide layer. The memory film and the semiconductor layer is formed on the inner surface of through hole provided in the second conductive layer, the first inter-electrode insulating film, and the third conductive layer. The insulating member is buried in a slit dividing the second conductive layer, the first inter-electrode insulating film, and the third conductive layer. The silicide layer is formed on surfaces of the second conductive layer and the third conductive layer in the slit. The distance between the second conductive layer and the third conductive layer along the inner surface of the slit is longer than that of along the stacking direction. | 09-27-2012 |
20120250398 | MAGNETIC STORAGE ELEMENT, MAGNETIC STORAGE DEVICE, AND MAGNETIC MEMORY - A magnetic storage element according to an embodiment includes: a magnetic thin wire extending in a first direction and having a plurality of magnetic domains partitioned by domain walls; an electrode capable of applying a current flowing in the first direction and a current flowing in the opposite direction from the first direction, to the magnetic thin wire; and an assisting unit receiving an electrical input and assisting movement of the domain walls in an entire or part of the magnetic thin wire. | 10-04-2012 |
20130020627 | SHIFT REGISTER MEMORY AND METHOD OF MANUFACTURING THE SAME - In one embodiment, a shift register memory includes first and second control electrodes extending in a first direction parallel to a surface of a substrate, and facing each other in a second direction perpendicular to the first direction. The memory further includes a plurality of first floating electrodes provided in a line on a first control electrode side between the first and second control electrodes. The memory further includes a plurality of second floating electrodes provided in a line on a second control electrode side between the first and second control electrodes. Each of the first and second floating electrodes has a planar shape which is mirror-asymmetric with respect to a plane perpendicular to the first direction. | 01-24-2013 |
20130062683 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a method of manufacturing a semiconductor memory device is provided. In the method, a laminated body in which a first silicon layer, a first sacrificial layer, a second silicon layer, and a second sacrificial layer are laminated in turn is formed. A first insulating film is formed on the laminated body. A trench is formed in the laminated body and the first insulating film. A third sacrificial layer is formed into the trench. The third sacrificial layer is etched by wet etching to be retreated from a top surface of the third sacrificial layer, thereby etching end faces of the first sacrificial layer and the second sacrificial layer. | 03-14-2013 |
20130075918 | SHIFT REGISTER MEMORY - In one embodiment, a shift register memory includes a substrate, and a channel layer provided on the substrate, and having a helical shape rotating around an axis which is perpendicular to a surface of the substrate. The memory further includes at least three control electrodes provided on the substrate, extending in a direction parallel to the axis, and to be used to transfer charges in the channel layer. | 03-28-2013 |
20130109157 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME | 05-02-2013 |
20130126961 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A non-volatile semiconductor storage device has a plurality of memory strings to each of which a plurality of electrically rewritable memory cells are connected in series. Each of the memory strings includes first semiconductor layers each having a pair of columnar portions extending in a vertical direction with respect to a substrate and a coupling portion formed to couple the lower ends of the pair of columnar portions; a charge storage layer formed to surround the side surfaces of the columnar portions; and first conductive layers formed to surround the side surfaces of the columnar portions and the charge storage layer. The first conductive layers function as gate electrodes of the memory cells. | 05-23-2013 |
20130234233 | SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a semiconductor memory device comprises a first layer, a first conductive layer, a insulating layer, and a second conductive layer stacked on a substrate, a block insulating layer on inner surfaces of a pair of through-holes formed in the first conductive layer, the insulating layer, and the second conductive layer, and on an inner surface of a connecting hole connecting lower ends of the pair of through-holes, a charge storage layer on the block insulating layer, a second layer on the charge storage layer, and a semiconductor layer on the second layer. The second layer includes an air gap layer on the charge storage layer in the pair of through-holes, and a third conductive layer on the charge storage layer in the connecting hole. | 09-12-2013 |
20130242634 | SHIFT REGISTER MEMORY AND DRIVING METHOD THEREOF - A shift register memory according to the present embodiment includes a magnetic pillar including a plurality of magnetic layers and a plurality of nonmagnetic layers provided between the magnetic layers adjacent to each other. A stress application part applies a stress to the magnetic pillar. A magnetic-field application part applies a static magnetic field to the magnetic pillar. The stress application part applies the stress to the magnetic pillar in order to transfer magnetization states of the magnetic layers in a stacking direction of the magnetic layers. | 09-19-2013 |
20140050032 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device according to one embodiment of the present invention includes a dielectric film configured to store information depending on presence or absence of a conductive path therein, and a plurality of electrodes provided to contact a first surface of the dielectric film. The conductive path can be formed between two electrodes arbitrarily selected form the plurality of electrodes. The conductive path has a rectifying property of allowing a current to flow more easily in a first direction connecting arbitrary two electrodes than in a second direction opposite to the first direction. The largest possible number of the conductive paths that may be formed is larger than the number of the plurality of electrodes. | 02-20-2014 |
20140063893 | SHIFT REGISTER TYPE MAGNETIC MEMORY - A shift register type magnetic memory according to an embodiment includes: a magnetic nanowire; a magnetic material chain provided in close vicinity to the magnetic nanowire, the magnetic material chain including a plurality of disk-shaped ferromagnetic films arranged along a direction in which the magnetic nanowire extends; a magnetization rotation drive unit configured to rotate and drive magnetization of the plurality of ferromagnetic films; a writing unit configured to write magnetic information into the magnetic nanowire; and a reading unit configured to read magnetic information from the magnetic nanowire. | 03-06-2014 |
20140085976 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - This nonvolatile semiconductor memory device comprises a transistor string formed on a substrate and including a plurality of first transistors connected in series with each other. A first bit line is connected to a first end of the transistor string. A source line is connected to a second end of the transistor string. A memory string extends in a direction perpendicular to the substrate and comprises a plurality of nonvolatile memory transistors and a select transistor connected in series. Moreover, a part of the memory string is connected to a gate of the first transistor. | 03-27-2014 |
20140085989 | SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a semiconductor memory device includes memory units each of which includes first and second select transistors and memory cells connected in series between the first and second select transistors. A control circuit applies a first potential difference between a source and a drain of either the first or second select transistor in a first memory unit, thereby programming either the first or second select transistor. The control circuit applies a second potential difference between a source and a drain of either the first or second select transistor in a second memory unit connected in common to the same select gate line as that of the first memory unit, thereby inhibiting either the first or second select transistor from being programmed. | 03-27-2014 |
20140104941 | MAGNETIC MEMORY - A magnetic memory according to an embodiment includes: a magnetic nanowire; first insulating layers provided on a first surface of the magnetic nanowire, each of the first insulating layers having a first and second end faces, a thickness of the first insulating layer over the first end face being thicker than a thickness of the first insulating layer over the second end face; first electrodes on surfaces of the first insulating layers opposite to the first surface; second insulating layers on the second surface of the magnetic nanowire, each of the second insulating layers having a third and fourth end faces, a thickness of the second insulating layer over the third surface being thicker than a thickness of the second insulating layer over the fourth end face; and second electrodes on surfaces of the second insulating layers. | 04-17-2014 |
20140140126 | MAGNETIC STORAGE ELEMENT, MAGNETIC STORAGE DEVICE, MAGNETIC MEMORY, AND DRIVING METHOD - A magnetic storage element includes a magnetic nanowire. A cross-section of the magnetic nanowire has first and second visible outlines, the first visible outline has a first minimal point at which a distance from a virtual straight line becomes minimal, a second minimal point at which the distance from the virtual straight line becomes minimal, and a first maximal point at which the distance from the virtual straight line becomes longest between the first minimal point and the second minimal point, and an angle between a first straight line connecting the first minimal point and the second minimal point, and one of a second straight line connecting the first minimal point and the first maximal point and a third straight line connecting the second minimal point and the first maximal point is not smaller than four degrees and not larger than 30 degrees. | 05-22-2014 |
20140217493 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A non-volatile semiconductor storage device has a plurality of memory strings to each of which a plurality of electrically rewritable memory cells are connected in series. Each of the memory strings includes first semiconductor layers each having a pair of columnar portions extending in a vertical direction with respect to a substrate and a coupling portion formed to couple the lower ends of the pair of columnar portions; a charge storage layer formed to surround the side surfaces of the columnar portions; and first conductive layers formed to surround the side surfaces of the columnar portions and the charge storage layer. The first conductive layers function as gate electrodes of the memory cells. | 08-07-2014 |
20140231889 | SHIFT REGISTER MEMORY AND DRIVING METHOD THEREOF - A shift register memory according to the present embodiment includes a magnetic pillar including a plurality of magnetic layers and a plurality of nonmagnetic layers provided between the magnetic layers adjacent to each other. A stress application part applies a stress to the magnetic pillar. A magnetic-field application part applies a static magnetic field to the magnetic pillar. The stress application part applies the stress to the magnetic pillar in order to transfer magnetization states of the magnetic layers in a stacking direction of the magnetic layers. | 08-21-2014 |
20140241030 | SHIFT REGISTER AND SHIFT REGISTER TYPE MAGNETIC MEMORY - A shift register according to an embodiment includes: a magnetic nanowire; a first control electrode group and a second control electrode group arranged with the magnetic nanowire being sandwiched therebetween, the first control electrode group including a plurality of first control electrodes arranged to be spaced apart from each other along a direction in which the magnetic nanowire extends, the second control electrode group including a plurality of second control electrodes arranged to be spaced apart from each other to correspond to the plurality of first control electrodes along the direction in which the magnetic nanowire extends, and the second control electrodes corresponding to the first control electrodes being shifted in the direction in which the magnetic nanowire extends; a first driving unit for driving the first control electrode group; and a second driving unit for driving the second control electrode group. | 08-28-2014 |
20150053911 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device according to one embodiment of the present invention includes a dielectric film configured to store information depending on presence or absence of a conductive path therein, and a plurality of electrodes provided to contact a first surface of the dielectric film. The conductive path can be formed between two electrodes arbitrarily selected form the plurality of electrodes. The conductive path has a rectifying property of allowing a current to flow more easily in a first direction connecting arbitrary two electrodes than in a second direction opposite to the first direction. The largest possible number of the conductive paths that may be formed is larger than the number of the plurality of electrodes. | 02-26-2015 |