Patent application number | Description | Published |
20090108304 | PROTECTING SEMICONDUCTING OXIDES - In transistor structures such as thin film transistors (TFTs) in an array of cells, a layer of semiconducting oxide material that includes a channel is protected by a protective layer that includes low-temperature encapsulant material. The semiconducting oxide material can be a transition metal oxide material such as zinc oxide, and can be in an active layered substructure that also includes channel end electrodes. The low-temperature encapsulant can, for example, be an organic polymer such as poly(methyl methacrylate) or parylene, deposited on an exposed region of the oxide layer such as by spinning, spin-casting, evaporation, or vacuum deposition or an inorganic polymer deposited such as by spinning or liquid deposition. The protective layer can include a lower sublayer of low-temperature encapsulant on the exposed region and an upper sublayer of inorganic material on the lower sublayer. For roll-to-roll processing, a mechanically flexible, low-temperature substrate can be used. | 04-30-2009 |
20090152534 | Producing Layered Structures With Lamination - A layered structure can include laminated first and second substructures and an array with cell regions. The first substructure can include layered active circuitry, the second a top electrode layer. One or both substructure's surface that contacts the other can be on a polymer-containing layer, structured to generate free charge carriers and/or to transport charge carriers. A cell region of the array can include portions of each substructure; the cell region's portion of the first substructure can include a subregion of electrically conductive material and a subregion of semiconductive material, its portion of the second can include part of the top electrode layer. The layered structure can include one or more lamination artifacts on or in the polymer-containing layer; the lamination artifacts can include artifacts of contact pressure, or heat, or of surface shape, and the interface surface can be without vias. | 06-18-2009 |
20090159781 | Producing Layered Structures With Layers That Transport Charge Carriers - Layered structures such as photosensing arrays include layers in which charge carriers can be transported. For example, a carrier-transporting substructure that includes a solution processing artifact can transport charge carriers that flow to or from it through charge-flow surface parts that are on electrically conductive regions of a circuitry substructure; the circuitry substructure can also have channel surface parts that are on semiconductive channel regions, with a set of the channel regions operating as acceptable switches in an application. Or a first substructure's surface can have carrier-active surface parts on electrode regions and line surface parts on line regions; a second substructure can include a transport layer on carrier-active surface parts and, over it, an electrically conductive layer; to prevent leakage, an open region can be defined in the electrically conductive layer over the line surface part and/or an electrically insulating layer portion can cover the line surface part. | 06-25-2009 |
20090159875 | Producing Layered Structures With Semiconductive Regions or Subregions - In layered structures, channel regions and light-interactive regions can include the same semiconductive polymer material, such as with an organic polymer. A light-interactive region can be in charge-flow contact with a contacting electrode region, and a channel region can, when conductive, provide an electrical connection between the contacting electrode region and other circuitry. For example, free charge carriers can be generated in the light-interactive region, resulting in a capacitively stored signal level; the signal level can be read out to other circuitry by turning on a transistor that includes the channel region. In an array of photosensing cells with organic thin film transistors, an opaque insulating material can be patterned to cover a data line and channel regions of cells along the line, but not extend entirely over the cells' light-interactive regions. | 06-25-2009 |
20090159891 | MODIFYING A SURFACE IN A PRINTED TRANSISTOR PROCESS - A method of forming an electronic device includes depositing a dielectric, forming a first functional material layer having a first surface energy, depositing at least one first at least semiconductive feature of the device, forming a second functional material layer to provide a surface having a second surface energy, and depositing at least one second at least semiconductive feature of the device to connect to the first at least semiconductive feature of the device. A method of forming an electronic device includes depositing a first, dielectric material, depositing a second material, depositing at least one first at least semiconductive feature of the device on the second material, altering the second material to form a altered second material, and depositing at least one at least semiconductive feature from solution to connect the first semiconductive feature of the device. An electronic device has a substrate, a dielectric layer, a first functional layer having a first surface energy, at least one first at least semiconductive feature on the first functional layer, a second functional layer in a region between adjacent to the first at least semiconductive features, and at least one second at least semiconductive feature on the second functional layer. | 06-25-2009 |
20090243020 | Producing Layered Structures With Layers That Transport Charge Carriers - Layered structures such as photosensing arrays include layers in which charge carriers can be transported. For example, a carrier-transporting substructure that includes a solution processing artifact can transport charge carriers that flow to or from it through charge-flow surface parts that are on electrically conductive regions of a circuitry substructure; the circuitry substructure can also have channel surface parts that are on semiconductive channel regions, with a set of the channel regions operating as acceptable switches in an application. Or a first substructure's surface can have carrier-active surface parts on electrode regions and line surface parts on line regions; a second substructure can include a transport layer on carrier-active surface parts and, over it, an electrically conductive layer; to prevent leakage, an open region can be defined in the electrically conductive layer over the line surface part and/or an electrically insulating layer portion can cover the line surface part. | 10-01-2009 |
20100136757 | METHOD FOR ALIGNING ELONGATED NANOSTRUCTURES - A method of depositing elongated nanostructures that allows accurate positioning and orientation is described. The method involves printing or otherwise depositing elongated nanostructures in a carrier solution. The deposited droplets are also elongated, usually by patterning the surface upon which the droplets are deposited. As the droplet evaporates, the fluid flow within the droplets is controlled such that the nanostructures are deposited either at the edge of the elongated droplet or the center of the elongated droplet. The described deposition technique has particular application in forming the active region of a transistor. | 06-03-2010 |
20100273292 | MODIFYING A SURFACE IN A PRINTED TRANSISTOR PROCESS - A method of forming an electronic device includes depositing a dielectric, forming a first functional material layer having a first surface energy, depositing at least one first at least semiconductive feature of the device, forming a second functional material layer to provide a surface having a second surface energy, and depositing at least one second at least semiconductive feature of the device to connect to the first at least semiconductive feature of the device. A method of forming an electronic device includes depositing a first, dielectric material, depositing a second material, depositing at lease one first at least semiconductive feature of the device on the second material, altering the second material to form a altered second material, and depositing at least one at least semiconductive feature from solution to connect the first semiconductive feature of the device. An electronic device has a substrate, a dielectric layer, a first functional layer having a first surface energy, at least one first at least semiconductive feature on the first functional layer, a second functional layer in a region between adjacent to the first at least semiconductive features, and at least one second at least semiconductive feature on the second functional layer. | 10-28-2010 |
20110027947 | PRINTING METHOD FOR HIGH PERFORMANCE ELECTRONIC DEVICES - A method of depositing elongated nanostructures that allows accurate positioning and orientation is described. The method involves printing or otherwise depositing elongated nanostructures in a carrier solution. The deposited droplets are also elongated, usually by patterning the surface upon which the droplets are deposited. As the droplet evaporates, the fluid flow within the droplets is controlled such that the nanostructures are deposited either at the edge of the elongated droplet or the center of the elongated droplet. The described deposition technique has particular application in forming the active region of a transistor. | 02-03-2011 |
20120326149 | Protecting Semiconducting Oxides - In transistor structures such as thin film transistors (TFTs) in an array of cells, a layer of semiconducting oxide material that includes a channel is protected by a protective layer that includes low-temperature encapsulant material. The semiconducting oxide material can be a transition metal oxide material such as zinc oxide, and can be in an active layered substructure that also includes channel end electrodes. The low-temperature encapsulant can, for example, be an organic polymer such as poly(methyl methacrylate) or parylene, deposited on an exposed region of the oxide layer such as by spinning, spincasting, evaporation, or vacuum deposition or an inorganic polymer deposited such as by spinning or liquid deposition. The protective layer can include a lower sublayer of low-temperature encapsulant on the exposed region and an upper sublayer of inorganic material on the lower sublayer. For roll-to-roll processing, a mechanically flexible, low-temperature substrate can be used. | 12-27-2012 |