Patent application number | Description | Published |
20080197353 | SEMICONDUCTOR DEVICE FOR WHICH ELECTRICAL TEST IS PERFORMED WHILE PROBE IS IN CONTACT WITH CONDUCTIVE PAD - A semiconductor device that comprises a conductive pad that is provided on the insulating film and that is obtained by forming a main conductive film and a surface conductive film harder than the main conductive film in that order. | 08-21-2008 |
20080197502 | SEMICONDUCTOR DEVICE HAVING METAL WIRINGS OF LAMINATED STRUCTURE - A semiconductor device that includes a metal wiring formed on the insulating film and having a main wiring portion laminated with a plurality of metal films and a metal protection film formed at least on the upper surfaces of the main wiring portion and made of a precious metal material. | 08-21-2008 |
20080197506 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR WAFER STRUCTURE - A semiconductor device manufacturing method, includes the steps of forming an insulating film over a semiconductor substrate, thinning selectively a thick portion, whose film thickness is thicker than a reference value, of the insulating film, forming contact holes in a thinned portion of the insulating film | 08-21-2008 |
20080199976 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC CAPACITOR - A semiconductor device manufacturing method has a step forming a transistor layer portion on a semiconductor substrate, and a step forming a ferroelectric capacitor portion including a lower electrode, a ferroelectric substance and an upper electrode above the transistor layer portion, wherein the step forming the ferroelectric capacitor portion includes adjusting an area of the upper electrode on the basis of manufacturing parameters of the ferroelectric capacitor portion. | 08-21-2008 |
20080203576 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor device including, forming a first insulating film above a silicon substrate, forming an impurity layer in the first insulating film by ion-implanting impurities into a predetermined depth of the first insulating film, and modifying the impurity layer to a barrier insulating film by annealing the first insulating film after the impurity layer is formed, is provided. | 08-28-2008 |
20080217668 | Semiconductor device and method of manufacturing the same - After a ferroelectric capacitor ( | 09-11-2008 |
20080237795 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - There is provided a semiconductor device which includes a base insulating film formed on a semiconductor substrate, a capacitor formed on the base insulating film, an interlayer insulating film covering the capacitor, a first layer metal wiring formed on the interlayer insulating film, a single-layer first insulating film which covers the interlayer insulating film and the first layer metal wiring and has a first film thickness above the first layer metal wiring, a first capacitor protective insulating film formed on the first insulating film, a first cover insulating film which is formed on the first capacitor protective insulating film and has a second film thickness thicker than the first film thickness, above the first layer metal wiring, a third hole formed in the insulating films on the first layer metal wiring, and a fifth conductive plug formed in the third hole. | 10-02-2008 |
20080258195 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A ferroelectric capacitor is formed above a semiconductor substrate ( | 10-23-2008 |
20080258260 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device including a capacitor formed over a semiconductor substrate and including a lower electrode, a dielectric film formed over the lower electrode and an upper electrode formed over the dielectric film, an insulation film formed over the semiconductor substrate and the capacitor, and an electrode pad formed over the insulation film and including an alloy film of aluminum and magnesium. | 10-23-2008 |
20080258262 | SEMICONDUCTOR DEVICE WITH IMPROVED PADS - A semiconductor device has: a circuit portion having semiconductor elements formed on a semiconductor substrate; insulating lamination formed above the semiconductor substrate and covering the circuit portion; a multilevel wiring structure formed in the insulating lamination and including wiring patterns and via conductors; and a pad electrode structure formed above the semiconductor substrate and connected to the multilevel wiring structure. The pad electrode structure includes pad wiring patterns and pad via conductors interconnecting the pad wiring patterns, the uppermost pad wiring pattern includes a pad pattern and a sealing pattern surrounding the pad pattern in a loop shape. Another pad wiring pattern has continuous extended pad pattern of a size overlapping the sealing pattern. The pad via conductors include a plurality of columnar via conductors disposed in register with the pad pattern and a loop-shaped wall portion disposed in register with the sealing pattern. | 10-23-2008 |
20090008783 | SEMICONDUCTOR DEVICE WITH PADS OF ENHANCED MOISTURE BLOCKING ABILITY - A semiconductor device is provided having a pad with an improved moisture blocking ability. The semiconductor device has: a circuit portion including a plurality of semiconductor elements formed on a semiconductor substrate; lamination of insulator covering the circuit portion, including a passivation film as an uppermost layer having openings; ferro-electric capacitors formed in the lamination of insulator; wiring structure formed in the lamination of insulator and connected to the semiconductor elements and the ferro-electric capacitors; pad electrodes connected to the wiring structure, formed in the lamination of insulator and exposed in the openings of the passivation film; a conductive pad protection film, including a Pd film, covering each pad electrode via the opening of the passivation film, and extending on the passivation film; and stud bump or bonding wire connected to the pad electrode via the conductive pad protection film. | 01-08-2009 |
20090024274 | RECORDING DEVICE AND RECORDING METHOD - There is provided a recording device capable of collecting information which makes it possible to investigate an accident. A recording section, such as a FeRAM, records vehicle information indicative of current conditions of the vehicle at predetermined recording intervals. An accident level-determining section determines whether or not an accident has occurred, based on a magnitude of an impact on the vehicle detected by an impact-detecting section. When it is determined that an accident has occurred, a recording control section causes the recording section to record the vehicle information at the recording intervals (e.g. 0.1 seconds) shorter than those (e.g. 1 second) before the accident. This makes it possible to use pre-accident information and post-accident information to thereby investigate an accident in more detail. | 01-22-2009 |
20090117671 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING FERREOELECTRIC CAPACITOR - A method for manufacturing a semiconductor device includes the step of conducting an acceptance/rejection judgment about the semiconductor device. The acceptance/rejection judgment is conducted by using a hysteresis loop that indicates the relationship between the applied voltage and the polarization quantity of the ferroelectric capacitor. | 05-07-2009 |
20090160023 | Semiconductor device and manufacturing method thereof - An insulation film ( | 06-25-2009 |
20090243038 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device has forming a capacitor having electrodes and a ferroelectric film provided therebetween above a substrate, forming a pad electrode electrically connected to one of the electrodes of the capacitor above the substrate, forming a protective film covering the pad electrode over the substrate, forming an opening in the protective film exposing at least a part of the pad electrode, bringing a measurement terminal into contact with the exposed surface of the pad electrode, etching the surface of the pad electrode after the measurement terminal is brought into contact therewith, and forming a hydrogen absorbing film on the protective film and the pad electrode exposed through the opening. | 10-01-2009 |
20090273963 | SEMICONDUCTOR STORAGE DEVICE, SEMICONDUCTOR STORAGE DEVICE MANUFACTURING METHOD AND PACKAGE RESIN FORMING METHOD - A ferroelectric capacitor comprising a transistor layer superimposed on a semiconductor substrate, a ferroelectric capacitor layer provided superior to the transistor layer, a wiring layer provided superior to the ferroelectric capacitor layer, and a passivation film. Further, at least one layer of barrier film capable of inhibiting penetration of moisture and hydrogen into the underlayer is provided between the ferroelectric capacitor layer and the passivation film, and the passivation film is characterized by containing a novolac resin. | 11-05-2009 |
20090278231 | Semiconductor device and method for fabricating the same - The semiconductor device comprises a first insulation film | 11-12-2009 |
20090298201 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - In a manufacturing method of a semiconductor device, a first insulating film covering a ferroelectric capacitor is formed, and a first opening that has a relatively large diameter and reaches an electrode of the ferroelectric capacitor is formed in the first insulating film, and then recovery annealing of the ferroelectric capacitor is performed, and thereby, a path for oxygen can be secured in performing the recovery annealing, and the sufficient recovery annealing can be performed without causing problems during a manufacturing process. | 12-03-2009 |
20090298203 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - An aluminum oxide film covering a ferroelectric capacitor is formed. Next, an opening ( | 12-03-2009 |
20090302362 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A lower electrode film, a ferroelectric film, and an upper electrode film are formed on an insulation film covering a transistor formed on a semiconductor substrate. Furthermore, a Pt film is formed as a cap layer on the upper electrode film. Then, a hard mask (a TiN film and an SiO | 12-10-2009 |
20090302363 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided is a semiconductor device that includes: a base insulating film | 12-10-2009 |
20090309180 | SURFACE PROFILE SENSOR AND METHOD FOR MANUFACTURING THE SAME - A surface profile sensor includes an interlayer insulating film provided with a planarized upper surface formed above a semiconductor substrate, a detection electrode film formed on the interlayer insulating film, an upper insulating film formed on the detection electrode film and the interlayer insulating film and including the surface on which a silicon nitride film is exposed, and a protection insulating film deposited on the upper insulating film and made of a tetrahedral amorphous carbon (ta-C) film including a window formed on the detection electrode film. | 12-17-2009 |
20090315028 | Semiconductor substrate and production process thereof - A semiconductor substrate includes a wafer, a first stepped structure formed of plural stepped parts formed on a surface of the wafer with a first area occupation ratio, a second stepped structure formed of plural stepped parts formed on the surface of the wafer with a second, different area occupation ratio, and an interlayer insulation film formed on the surface so as to cover the first and second stepped structures, the interlayer insulation film having a planarized top surface, wherein there are provided at least first and second film-thickness monitoring patterns for monitoring film thickness on the surface in a manner covered by the interlayer insulation film, a first pattern group is formed on the surface such that the first pattern group comprises plural patterns disposed so as to surround the first film-thickness monitoring pattern, a second pattern group is formed on the surface such that the second pattern group comprises plural patterns disposed so as to surround the second film-thickness monitoring pattern, the first film-thickness monitoring pattern and the first pattern group having a third area occupation ratio on the surface, while the second film-thickness monitoring pattern and the second pattern group having a fourth area occupation ratio on the surface, wherein the third area occupation ratio is different from the fourth area occupation ratio. | 12-24-2009 |
20100001372 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Stable contact hole forming is attained even when an aluminum oxide film is present between layers provided with contact holes. The process comprises the steps of forming a first element layer on a semiconductor substrate; forming a first interlayer insulating film on the first element layer; forming a second element layer on the first interlayer insulating film; forming a second interlayer insulating film on the second element layer; forming a hole resist pattern on the second interlayer insulating film; conducting a first etching for forming of holes by etching the second interlayer insulating film; and conducting a second etching for extending of holes to the first element layer by etching the first interlayer insulating film. | 01-07-2010 |
20100009466 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - An interlayer insulating film ( | 01-14-2010 |
20100009544 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A coating solution of SOG is applied on a silicon oxynitride film ( | 01-14-2010 |
20100019348 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - After the formation of a first interlayer insulating, an etching stopper film made of SiON is formed thereon. Subsequently, a contact hole extending from the upper surface of the etching stopper film and reaching a high concentration impurity region is formed, and a first plug is formed by filling W into the contact hole. Next, a ferroelectric capacitor, a second interlayer insulating film, and the like are formed. Thereafter, a contact hole extending from the upper surface of the interlayer insulating film and reaching the first plug is formed. Then, the contact hole is filled with W to form a second plug. With this, even when misalignment occurs, the interlayer insulating film is prevented from being etched. | 01-28-2010 |
20100047931 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - When adopting a stack-type capacitor structure for a ferroelectric capacitor structure ( | 02-25-2010 |
20100087014 | HEAT TREATMENT APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a heat treatment apparatus including a treatment chamber housing a silicon substrate, a heater being provided in the treatment chamber and heating the silicon substrate, and an atmosphere adjustment mechanism reducing a concentration of oxygen contained in an atmosphere inside the treatment chamber to less than an oxygen concentration in the air. The atmosphere adjustment mechanism is provided with an oxygen trap, for example. | 04-08-2010 |
20100144064 | SEMICONDUCTOR DEVICE HAVING A FERROELECTRIC CAPACITOR - An ultra-thin semiconductor chip of an FeRAM, which is miniaturized and highly integrated with characteristic degradation of a ferroelectric capacitor suppressed though a thin package structure is applied to the FeRAM is realized. The semiconductor chip is molded up by using a sealing resin with a filler content set at a value in a range of 90 weight % to 93 weight % to produce a package structure. | 06-10-2010 |
20100193851 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a semiconductor device including a semiconductor substrate having transistors formed thereon, a first interlayer insulating film formed above the semiconductor substrate and the transistors, a ferroelectric capacitor formed above the first interlayer insulating film, a second interlayer insulating film formed above the first interlayer insulating film and the ferroelectric capacitor, a first metal wiring formed on the second interlayer insulating film, and a protection film formed on an upper surface of the wiring but not on a side surface of the wiring. | 08-05-2010 |
20100197046 | SEMICONDUCTOR DEVICE - A silicide film is formed between a ferroelectric capacitor structure, which is formed by sandwiching a ferroelectric film between a lower electrode and an upper electrode, and a conductive plug (the conductive material constituting the plug is tungsten (W) for example). Here, an example is shown in which a base film of the conductive plug is the silicide film. | 08-05-2010 |
20100203682 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device including a semiconductor device, an integrated circuit chip, a sealing resin encapsulating the integrated circuit chip and an insulating waterproof film covering at least a portion of a surface of said sealing resin and preventing penetration of moisture into the sealing resin. | 08-12-2010 |
20100248395 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A ferroelectric capacitor provided with a ferroelectric film ( | 09-30-2010 |
20100267214 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to the method for manufacturing a semiconductor device, a surface of a lower, insulating film ( | 10-21-2010 |
20110012230 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An insulation film ( | 01-20-2011 |
20110049675 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A semiconductor device includes a capacitor provided above a substrate including electrodes and a ferroelectric film provided therebetween, a pad electrode electrically connected to one of the electrodes of the capacitor, the pad electrode being formed above the substrate, the pad electrode having a recess on a surface of the substrate, a protective film covering a part of the pad electrode other than the recess on the exposed surface, and a hydrogen absorbing film on the protective film and the recess of the pad electrode. | 03-03-2011 |
20110086508 | SEMICONDUCTOR DEVICE HAVING METAL WIRINGS OF LAMINATED STRUCTURE - A semiconductor device that includes a metal wiring formed on the insulating film and having a main wiring portion laminated with a plurality of metal films and a metal protection film formed at least on the upper surfaces of the main wiring portion and made of a precious metal material. | 04-14-2011 |
20110108542 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND THERMAL ANNEALING APPARATUS - A method of manufacturing a semiconductor device has forming a ferroelectric film over a substrate, placing the substrate having the ferroelectric film in a chamber substantially held in vacuum, introducing oxygen and an inert gas into the chamber, annealing the ferroelectric film in the chamber, and containing oxygen and the inert gas while the chamber is maintained sealed. | 05-12-2011 |
20120028374 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A ferroelectric capacitor provided with a ferroelectric film ( | 02-02-2012 |
20120056322 | SEMICONDUCTOR DEVICE WITH PADS OF ENHANCED MOISTURE BLOCKING ABILITY - A semiconductor device is provided having a pad with an improved moisture blocking ability. The semiconductor device has: a circuit portion including a plurality of semiconductor elements formed on a semiconductor substrate; lamination of insulator covering the circuit portion, including a passivation film as an uppermost layer having openings; ferro-electric capacitors formed in the lamination of insulator; wiring structure formed in the lamination of insulator and connected to the semiconductor elements and the ferro-electric capacitors; pad electrodes connected to the wiring structure, formed in the lamination of insulator and exposed in the openings of the passivation film; a conductive pad protection film, including a Pd film, covering each pad electrode via the opening of the passivation film, and extending on the passivation film; and stud bump or bonding wire connected to the pad electrode via the conductive pad protection film. | 03-08-2012 |
20120146185 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - After the formation of a first interlayer insulating, an etching stopper film made of SiON is formed thereon. Subsequently, a contact hole extending from the upper surface of the etching stopper film and reaching a high concentration impurity region is formed, and a first plug is formed by filling W into the contact hole. Next, a ferroelectric capacitor, a second interlayer insulating film, and the like are formed. Thereafter, a contact hole extending from the upper surface of the interlayer insulating film and reaching the first plug is formed. Then, the contact hole is filled with W to form a second plug. With this, even when misalignment occurs, the interlayer insulating film is prevented from being etched. | 06-14-2012 |
20120171783 | FERROELECTRIC MEMORY AND MANUFACTURING METHOD THEREOF, AND MANUFACTURING METHOD OF FERROELECTRIC CAPACITOR - Provided is a ferroelectric memory including a silicon substrate, a transistor formed on the silicon substrate, and a ferroelectric capacitor formed above the transistor. The ferroelectric capacitor includes a lower electrode, a ferroelectric film formed on the lower electrode, an upper electrode formed on the ferroelectric film, and a metal film formed on the upper electrode. | 07-05-2012 |
20120195114 | SEMICONDUCTOR STORAGE DEVICE, SEMICONDUCTOR STORAGE DEVICE MANUFACTURING METHOD AND PACKAGE RESIN FORMING METHOD - A ferroelectric capacitor comprising a transistor layer superimposed on a semiconductor substrate, a ferroelectric capacitor layer provided superior to the transistor layer, a wiring layer provided superior to the ferroelectric capacitor layer, and a passivation film. Further, at least one layer of barrier film capable of inhibiting penetration of moisture and hydrogen into the underlayer is provided between the ferroelectric capacitor layer and the passivation film, and the passivation film is characterized by containing a novolac resin. | 08-02-2012 |
20120228684 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A transistor is formed on a semiconductor substrate, and thereafter a first insulating film is formed. Subsequently, a ferroelectric capacitor is formed on the first insulating film, and then a second insulating film is formed on the ferroelectric capacitor. Thereafter, the upper surface of the second insulating film is planarized. Subsequently, a contact hole which reaches one of impurity regions of the transistor is formed, and thus a plug is formed by embedding a conductor in the contact hole. Thereafter, a hydrogen barrier layer is formed of aluminum oxide or the like. Then, a third insulating film is formed on the hydrogen barrier layer. Subsequently, contact holes which are connected to the ferroelectric capacitor and the plug are formed. Thereafter, a conductor is embedded in the contact holes, and thus interconnections are formed. | 09-13-2012 |
20120244642 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method for manufacturing a semiconductor device including a semiconductor substrate having transistors formed thereon, a first interlayer insulating film formed above the semiconductor substrate and the transistors, a ferroelectric capacitor formed above the first interlayer insulating film, a second interlayer insulating film formed above the first interlayer insulating film and the ferroelectric capacitor, a first metal wiring formed on the second interlayer insulating film, and a protection film formed on an upper surface of the wiring but not on a side surface of the wiring. | 09-27-2012 |
20120288965 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Stable contact hole forming is attained even when an aluminum oxide film is present between layers provided with contact holes. The process comprises the steps of forming a first element layer on a semiconductor substrate; forming a first interlayer insulating film on the first element layer; forming a second element layer on the first interlayer insulating film; forming a second interlayer insulating film on the second element layer; forming a hole resist pattern on the second interlayer insulating film; conducting a first etching for forming of holes by etching the second interlayer insulating film; and conducting a second etching for extending of holes to the first element layer by etching the first interlayer insulating film. | 11-15-2012 |
20130078803 | SEMICONDUCTOR DEVICE INCLUDING A CIRCUIT AREA AND A MONITOR AREA HAVING A PLURALITY OF MONITOR LAYERS AND METHOD FOR MANUFACTURING THE SAME - In a circuit area wherein a semiconductor integrated circuit is to be formed, an isolation insulating film is formed on a surface of a semiconductor substrate, and, at the same time, five isolation insulating films extending in one specific direction are formed within a monitor area at a fixed spacing. Then, a gate insulation film and a gate electrode are formed within the circuit area on the semiconductor substrate, and, at the same time, five gate insulation films and five gate electrodes extending in the same direction as the isolation insulating films are formed within the monitor area at the same spacing as that of the isolation insulating films. | 03-28-2013 |
20130087888 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - There is provided a method for manufacturing a semiconductor device, including, forming a first insulating film on a semiconductor substrate, forming a capacitor on the first insulating film, forming a second insulating film covering the capacitor, forming a metal wiring on the second insulating film, forming a first capacitor protective insulating film covering the metal wiring and the second insulating film, forming an insulating sidewall on a side of the metal wiring, forming a third insulating film on the insulating sidewall, forming a hole by etching the third insulating film under a condition that an etching rate of the insulating sidewall would be lower than that of the third insulating film, and forming a conductive plug inside the hole. | 04-11-2013 |
20130161790 | METHOD OF MANUFACTURING A FeRAM DEVICE - A lower electrode film, a ferroelectric film, and an upper electrode film are formed on an insulation film covering a transistor formed on a semiconductor substrate. Furthermore, a Pt film is formed as a cap layer on the upper electrode film. Then, a hard mask (a TiN film and an SiO | 06-27-2013 |
20130203186 | HEAT TREATMENT APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a heat treatment apparatus including a treatment chamber housing a silicon substrate, a heater being provided in the treatment chamber and heating the silicon substrate, and an atmosphere adjustment mechanism reducing a concentration of oxygen contained in an atmosphere inside the treatment chamber to less than an oxygen concentration in the air. The atmosphere adjustment mechanism is provided with an oxygen trap, for example. | 08-08-2013 |
20140017819 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A ferroelectric capacitor is formed above a semiconductor substrate ( | 01-16-2014 |
20140091430 | SEMICONDUCTOR DEVICE INCLUDING OPERATIVE CAPACITORS AND DUMMY CAPACITORS - The semiconductor device according to the present invention comprises a plurality of actually operative capacitors formed, arranged in an actually operative capacitor part over a semiconductor substrate and each including a lower electrode, a ferroelectric film and an upper electrode; a plurality of dummy capacitors formed, arranged in a dummy capacitor part provided outside of the actually operative capacitor part over the semiconductor substrate and each including the lower electrode, the ferroelectric film and the upper electrode; a plurality of interconnections respectively formed on said plurality of the actually operative capacitors and respectively connected to the upper electrodes of said plurality of the actually operative capacitors; and the interconnections respectively formed on said plurality of the dummy capacitors. | 04-03-2014 |
20140299965 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - After the formation of a first interlayer insulating, an etching stopper film made of SiON is formed thereon. Subsequently, a contact hole extending from the upper surface of the etching stopper film and reaching a high concentration impurity region is formed, and a first plug is formed by filling W into the contact hole. Next, a ferroelectric capacitor, a second interlayer insulating film, and the like are formed. Thereafter, a contact hole extending from the upper surface of the interlayer insulating film and reaching the first plug is formed. Then, the contact hole is filled with W to form a second plug. With this, even when misalignment occurs, the interlayer insulating film is prevented from being etched. | 10-09-2014 |
20150054129 | SEMICONDUCTOR DEVICE WITH PADS OF ENHANCED MOISTURE BLOCKING ABILITY - A semiconductor device is provided having a pad with an improved moisture blocking ability. The semiconductor device has: a circuit portion including a plurality of semiconductor elements formed on a semiconductor substrate; lamination of insulator covering the circuit portion, including a passivation film as an uppermost layer having openings; ferro-electric capacitors formed in the lamination of insulator; wiring structure formed in the lamination of insulator and connected to the semiconductor elements and the ferro-electric capacitors; pad electrodes connected to the wiring structure, formed in the lamination of insulator and exposed in the openings of the passivation film; a conductive pad protection film, including a Pd film, covering each pad electrode via the opening of the passivation film, and extending on the passivation film; and stud bump or bonding wire connected to the pad electrode via the conductive pad protection film. | 02-26-2015 |