Patent application number | Description | Published |
20090107626 | ADHESION IMPROVEMENT OF DIELECTRIC BARRIER TO COPPER BY THE ADDITION OF THIN INTERFACE LAYER - Embodiments described herein provide a method of processing a substrate. The method includes depositing an interface adhesion layer between a conductive material and a dielectric material such that the interface adhesion layer provides increased adhesion between the conductive material and the dielectric material. In one embodiment a method for processing a substrate is provided. The method comprises depositing an interface adhesion layer on a substrate comprising a conductive material, exposing the interface adhesion layer to a nitrogen containing plasma, and depositing a dielectric layer on the interface adhesion layer after exposing the interface adhesion layer to the nitrogen containing plasma. | 04-30-2009 |
20090236214 | TUNABLE GROUND PLANES IN PLASMA CHAMBERS - An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls. | 09-24-2009 |
20090305515 | METHOD AND APPARATUS FOR UV CURING WITH WATER VAPOR - Embodiments of the invention generally relate to a method and apparatus for curing dielectric material deposited in trenches or gaps in the surface of a substrate to produce a feature free of voids and seams. In one embodiment, the dielectric material is steam annealed while being exposed to ultraviolet radiation. In one embodiment, the dielectric material is further thermally annealed in a nitrogen environment. | 12-10-2009 |
20090314208 | PEDESTAL HEATER FOR LOW TEMPERATURE PECVD APPLICATION - A method and apparatus for providing power to a heated support pedestal is provided. In one embodiment, a process kit is described. The process kit includes a hollow shaft made of a conductive material coupled to a substrate support at one end and a base assembly at an opposing end, the base assembly adapted to couple to a power box disposed on a semiconductor processing tool. In one embodiment, the base assembly comprises at least one exposed electrical connector disposed in an insert made of a dielectric material, such as a plastic resin. | 12-24-2009 |
20090314211 | BIG FOOT LIFT PIN - Embodiments described herein generally provide a lift pin assembly having increased wafer placement accuracy, repeatability, reliability, and corrosion resistance. In one embodiment, a lift pin assembly for positioning a substrate relative to a substrate support is provided. The lift pin assembly comprises a lift pin comprising a pin shaft, a pin head coupled with a first end of the pin shaft for supporting the substrate, and a shoulder coupled with a second end of the pin shaft. The lift pin assembly further comprises a cylindrical body slidably coupled with the pin shaft and a locking pin for preventing the cylindrical body from sliding along the shaft, wherein the shoulder has a through-hole dimensioned to accommodate the locking pin. | 12-24-2009 |
20090314309 | METHOD AND SYSTEM FOR SUPPLYING A CLEANING GAS INTO A PROCESS CHAMBER - A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region. | 12-24-2009 |
20100012273 | Method and System for Supplying a Cleaning Gas Into a Process Chamber - A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region. | 01-21-2010 |
20100096569 | ULTRAVIOLET-TRANSMITTING MICROWAVE REFLECTOR COMPRISING A MICROMESH SCREEN - An ultraviolet-transmitting microwave reflector for a substrate processing chamber, comprises a micromesh screen extending across the metallic frame. In one version, the micromesh screen comprises at least one electroformed layer. A method of fabricating the microwave reflector comprises electroforming a metallic frame surrounding a micromesh screen such that the micromesh screen comprises an open area of greater than 80% of the total area. | 04-22-2010 |
20100285240 | APPARATUS AND METHOD FOR EXPOSING A SUBSTRATE TO A ROTATING IRRADIANCE PATTERN OF UV RADIATION - Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other. The substrate processing tool may further comprise one or more reflectors adapted to generate a flood pattern of ultraviolet radiation over the substrate that has complementary high and low intensity areas which combine to generate a substantially uniform irradiance pattern if rotated. Other embodiments are also disclosed. | 11-11-2010 |
20110034034 | DUAL TEMPERATURE HEATER - A method and apparatus for heating a substrate in a chamber are provided. an apparatus for positioning a substrate in a processing chamber. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering members for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of the centering members are movably disposed along a periphery of the support surface, and each of the plurality of centering members comprises a first end portion for either contacting or supporting a peripheral edge of the substrate. | 02-10-2011 |
20110147363 | MULTIFUNCTIONAL HEATER/CHILLER PEDESTAL FOR WIDE RANGE WAFER TEMPERATURE CONTROL - Embodiments of the invention generally relate to a semiconductor processing chamber and, more specifically, a heated support pedestal for a semiconductor processing chamber. In one embodiment, a pedestal for a semiconductor processing chamber is provided. The pedestal comprises a substrate support comprising a conductive material and having a support surface for receiving a substrate, a resistive heater encapsulated within the substrate support, a hollow shaft coupled to the substrate support at a first end and a mating interface at an opposing end, the hollow shaft comprising a shaft body having a hollow core, and a cooling channel assembly encircling the hollow core and disposed within the shaft body for removing heat from the pedestal via an internal cooling path, wherein the substrate support has a heat control gap positioned between the heating element and the ring-shaped cooling channel. | 06-23-2011 |
20110256041 | FLUID FILTRATION FOR SUBSTRATE PROCESSING CHAMBER - A filter for filtering a fluid in a substrate processing apparatus comprises first and second stages that are connected to one another. A delivery system provides a vaporized liquid to the filter. The first stage of the filter comprises a basic compound, and the second stage of the filter comprises a desiccant. A second filter comprises a permeation filter with permeable membrane to filter the fluid. Methods of filtering the fluid to reduce formation of undesirable process residues using the filter(s) are also described. | 10-20-2011 |
20110294303 | CONFINED PROCESS VOLUME PECVD CHAMBER - An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, a shield member disposed in the processing chamber below the substrate support, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source, and an electrode separated from the conductive gas distributor and the chamber body by electrical insulators. The electrode is also coupled to a source of electric power. The substrate support is formed with a stiffness that permits very little departure from parallelism. The shield member thermally shields a substrate transfer opening in the lower portion of the chamber body. A pumping plenum is located below the substrate support processing position, and is spaced apart therefrom. | 12-01-2011 |
20110298099 | SILICON DIOXIDE LAYER DEPOSITED WITH BDEAS - A silicon dioxide layer is deposited onto a substrate using a process gas comprising BDEAS and an oxygen-containing gas such as ozone. The silicon dioxide layer can be part of an etch-resistant stack that includes a resist layer. In another version, the silicon dioxide layer is deposited into through holes to form an oxide liner for through-silicon vias. | 12-08-2011 |
20120090691 | QUARTZ SHOWERHEAD FOR NANOCURE UV CHAMBER - Embodiments of the invention generally provide apparatuses and methods for controlling the gas flow profile within a processing chamber. In one embodiment, a processing tool includes an ultraviolet processing chamber defining a processing region, a substrate support, a window disposed between a UV radiation source and the substrate support, and a transparent showerhead disposed within the processing region between the window and the substrate support and having one or more transparent showerhead passages between upper and lower processing regions. The processing tool also includes a gas distribution ring having one or more gas distribution ring passages between a gas distribution ring inner channel and the upper processing region and a gas outlet ring positioned below the gas distribution ring, the gas outlet ring having one or more gas outlet passages between a gas outlet ring inner channel within the gas outlet ring and the lower processing region. | 04-19-2012 |
20120129275 | DUAL-BULB LAMPHEAD CONTROL METHODOLOGY - The present invention generally relates to methods of controlling UV lamp output to increase irradiance uniformity. The methods generally include determining a baseline irradiance within a chamber, determining the relative irradiance on a substrate corresponding to a first lamp and a second lamp, and determining correction or compensation factors based on the relative irradiances and the baseline irradiance. The lamps are then adjusted via closed loop control using the correction or compensation factors to individually adjust the lamps to the desired output. The lamps may optionally be adjusted to equal irradiances prior to adjusting the lamps to the desired output. The closed loop control ensures process uniformity from substrate to substrate. The irradiance measurement and the correction or compensation factors allow for adjustment of lamp set points due to chamber component degradation, chamber component replacement, or chamber cleaning. | 05-24-2012 |
20120132618 | METHOD AND APPARATUS FOR MODULATING WAFER TREATMENT PROFILE IN UV CHAMBER - A method and apparatus for providing a uniform UV radiation irradiance profile across a surface of a substrate is provided. In one embodiment, a substrate processing tool includes a processing chamber defining a processing region, a substrate support for supporting a substrate within the processing region, an ultraviolet (UV) radiation source spaced apart from the substrate support and configured to transmit ultraviolet radiation toward the substrate positioned on the substrate support, and a light transmissive window positioned between the UV radiation source and the substrate support, the light transmissive window having an optical film layer coated thereon. In one example, the optical film layer has a non-uniform thickness profile in a radial direction, wherein a thickness of the optical film layer at the peripheral area of the light transmissive window is relatively thicker than at the center region of the optical film layer. | 05-31-2012 |
20120187534 | PULSE METHOD OF OXIDIZING SIDEWALL DIELECTRICS FOR HIGH CAPACITANCE APPLICATIONS - The present invention provides systems, methods and apparatus for manufacturing a memory cell. The invention includes forming a feature having sidewalls in a first dielectric material; forming a first conductive material on the sidewalls of the feature; depositing a layer of a second dielectric material on the conductive material; and exposing the second dielectric material to oxidizing species and ultraviolet light to oxidize the second dielectric material. Numerous additional aspects are disclosed. | 07-26-2012 |
20120205046 | TUNABLE GROUND PLANES IN PLASMA CHAMBERS - An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls. | 08-16-2012 |
20120211484 | METHODS AND APPARATUS FOR A MULTI-ZONE PEDESTAL HEATER - The present invention provides systems, methods and apparatus for manufacturing a multi-zone pedestal heater. A multi-zone pedestal heater includes a heater plate which includes a first zone including a first heating element and a first thermocouple for sensing the temperature of the first zone wherein the first zone is disposed in the center of the heater plate; and a second zone including a second heating element and a first embedded thermocouple for sensing the temperature of the second zone wherein the first embedded thermocouple includes a first longitudinal piece that extends from a center of the heater plate to the second zone and the first longitudinal piece is entirely encased within the heater plate. Numerous additional aspects are disclosed. | 08-23-2012 |
20120258259 | APPARATUS AND METHOD FOR UV TREATMENT, CHEMICAL TREATMENT, AND DEPOSITION - Embodiments of the present invention provide apparatus and methods for performing UV treatment and chemical treatment and/or deposition in the same chamber. One embodiment of the present invention provides a processing chamber including a UV transparent gas distribution showerhead disposed above a substrate support located in an inner volume of the processing chamber, a UV transparent window disposed above the UV transparent gas distribution showerhead, and a UV unit disposed outside the inner volume. The UV unit is configured to direct UV lights towards the substrate support through the UV transparent window and the UV transparent gas distribution showerhead. | 10-11-2012 |
20120276301 | ADHESION IMPROVEMENT OF DIELECTRIC BARRIER TO COPPER BY THE ADDITION OF THIN INTERFACE LAYER - Embodiments described herein provide a method of processing a substrate. The method includes depositing an interface adhesion layer between a conductive material and a dielectric material such that the interface adhesion layer provides increased adhesion between the conductive material and the dielectric material. In one embodiment a method for processing a substrate is provided. The method comprises depositing an interface adhesion layer on a substrate comprising a conductive material, exposing the interface adhesion layer to a nitrogen containing plasma, and depositing a dielectric layer on the interface adhesion layer after exposing the interface adhesion layer to the nitrogen containing plasma. | 11-01-2012 |
20130068391 | SLIT VALVE APPARATUS, SYSTEMS, AND METHODS - Slit valve apparatuses are described. In one aspect, a slit valve apparatus is disclosed having a gate with at least one sealing surface, a blocker element, and a connector member that structurally connects the gate and the blocker element. Systems and methods including the slit valve apparatus are also disclosed, as are numerous other aspects. | 03-21-2013 |
20130122611 | DUAL-BULB LAMPHEAD CONTROL METHODOLOGY - The present invention generally relates to methods of controlling UV lamp output to increase irradiance uniformity. The methods generally include determining a baseline irradiance within a chamber, determining the relative irradiance on a substrate corresponding to a first lamp and a second lamp, and determining correction or compensation factors based on the relative irradiances and the baseline irradiance. The lamps are then adjusted via closed loop control using the correction or compensation factors to individually adjust the lamps to the desired output. The lamps may optionally be adjusted to equal irradiances prior to adjusting the lamps to the desired output. The closed loop control ensures process uniformity from substrate to substrate. The irradiance measurement and the correction or compensation factors allow for adjustment of lamp set points due to chamber component degradation, chamber component replacement, or chamber cleaning. | 05-16-2013 |
20130126206 | APPARATUS AND METHODS FOR IMPROVING RELIABILITY OF RF GROUNDING - Embodiments of the present invention provide an RF conducting rod comprising a hollow portion. Particularly, the RF conducting rod comprises an elongated hollow body having a sidewall enclosing an inner volume, a first solid connector extending from a first end of the elongated hollow body, and a second solid connector extending from a second end of the elongated hollow body. Each of the elongated hollow body, the first solid connector and the second solid connector is formed from an electrically conductive material. | 05-23-2013 |
20130161629 | ZERO SHRINKAGE SMOOTH INTERFACE OXY-NITRIDE AND OXY-AMORPHOUS-SILICON STACKS FOR 3D MEMORY VERTICAL GATE APPLICATION - Methods are provided for depositing a stack of film layers for use in vertical gates for 3D memory devices, by depositing a sacrificial nitride film layer at a sacrificial film deposition temperature greater than about 550° C.; depositing an oxide film layer over the nitride film layer, at an oxide deposition temperature of about 600° C. or greater; repeating the above steps to deposit a film stack having alternating layers of the sacrificial films and the oxide films; forming a plurality of holes in the film stack; and depositing polysilicon in the plurality of holes in the film stack at a polysilicon process temperature of about 700° C. or greater, wherein the sacrificial film layers and the oxide film layers experience near zero shrinkage during the polysilicon deposition. Flash drive memory devices may also be made by these methods. | 06-27-2013 |
20130177706 | METHOD FOR SEASONING UV CHAMBER OPTICAL COMPONENTS TO AVOID DEGRADATION - Methods for depositing a carbon-based seasoning layer on exposed surfaces of the optical components within a UV processing chamber are disclosed. In one embodiment, the method includes flowing a carbon-containing precursor radially inwardly across exposed surfaces of optical components within the thermal processing chamber from a circumference of the optical components, exposing the carbon-containing precursor to a thermal radiation emitted from a heating source to form a carbon-based seasoning layer on the exposed surfaces of the optical components, exposing the carbon-based seasoning layer to ozone, wherein the ozone is introduced into the processing chamber by flowing the ozone radially inwardly across exposed surfaces of optical components from the circumference of the optical components, heating the optical components to a temperature of about 400° C. or above while flowing the ozone to remove the carbon-based seasoning layer from exposed surfaces of the optical components. | 07-11-2013 |
20130213574 | METHOD AND SYSTEM FOR SUPPLYING A CLEANING GAS INTO A PROCESS CHAMBER - A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region. | 08-22-2013 |
20130284204 | METHOD FOR UV BASED SILYLATION CHAMBER CLEAN - Embodiments of the invention generally provide methods for cleaning a UV processing chamber. In one embodiment, the method includes flowing an oxygen-containing gas through a plurality of passages formed in a UV transparent gas distribution showerhead and into a processing region located between the UV transparent gas distribution showerhead and a substrate support disposed within the thermal processing chamber, exposing the oxygen-containing gas to UV radiation under a pressure scheme comprising a low pressure stage and a high pressure stage to generate reactive oxygen radicals, and removing unwanted residues or deposition build-up from exposed surfaces of chamber components presented in the thermal processing chamber using the reactive oxygen radicals. | 10-31-2013 |
20130302996 | DEPOSITION OF AN AMORPHOUS CARBON LAYER WITH HIGH FILM DENSITY AND HIGH ETCH SELECTIVITY - Embodiments described herein relate to a method for processing a substrate. In one embodiment, the method includes introducing a gas mixture comprising a hydrocarbon source and a diluent gas into a deposition chamber located within a processing system, generating a plasma from the gas mixture in the deposition chamber at a temperature between about 200° C. and about 700° C. to form a low-hydrogen content amorphous carbon layer on the substrate, transferring the substrate into a curing chamber located within the processing system without breaking vacuum, and exposing the substrate to UV radiation within the curing chamber at a curing temperature above about 200° C. | 11-14-2013 |
20130344704 | ENHANCEMENT IN UV CURING EFFICIENCY USING OXYGEN-DOPED PURGE FOR ULTRA LOW-K DIELECTRIC FILM - Embodiments of the invention provide methods for curing an ultra low-k dielectric film within a UV processing chamber. In one embodiment, the method includes depositing an ultra low-k dielectric layer on a substrate in a deposition chamber, and subjecting the deposited ultra low-k dielectric layer to a UV curing processes in a UV processing chamber. The method includes stabilizing the UV processing chamber by flowing an oxygen gas and a purge gas into the UV processing chamber at a flow ratio of about 1:50000 to about 1:100. While flowing the oxygen-doped purge gas, the substrate is exposed to UV radiation to cure the deposited ultra low-k dielectric layer. The inventive oxygen-doped purge curing process provides an alternate pathway to build silicon-oxygen network of the ultra low-k dielectric material, thereby accelerating cross-linking efficiency without significantly affecting the film properties of the deposited ultra low-k dielectric material. | 12-26-2013 |
20140053866 | METHOD AND HARDWARE FOR CLEANING UV CHAMBERS - A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NF | 02-27-2014 |
20140076236 | METHOD AND SYSTEM FOR SUPPLYING A CLEANING GAS INTO A PROCESS CHAMBER - A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region. | 03-20-2014 |
20140083361 | CONTROLLING TEMPERATURE IN SUBSTRATE PROCESSING SYSTEMS - An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor such as a face plate coupled to a power source, and a heater coupled to the conductive gas distributor. A zoned blocker plate is coupled to the conductive gas distributor and a cooled gas cap is coupled to the zoned blocker plate. A tuning electrode may be disposed between the conductive gas distributor and the chamber body for adjusting a ground pathway of the plasma. A second tuning electrode may be coupled to the substrate support, and a bias electrode may also be coupled to the substrate support. | 03-27-2014 |
20140083523 | APPARATUS AND METHOD FOR PURGING GASEOUS COMPOUNDS - A processing chamber is described having a gas evacuation flow path from the center to the edge of the chamber. Purge gas is introduced at an opening around a support shaft that supports a heater plate. A shaft wall around the opening directs the purge gas along the support shaft to an evacuation plenum. Gas flows from the evacuation plenum through an opening in a second plate near the shaft wall and along the chamber bottom to an opening coupled to a vacuum source. Purge gas is also directed to the slit valve. | 03-27-2014 |
20140087489 | BOTTOM AND SIDE PLASMA TUNING HAVING CLOSED LOOP CONTROL - An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source. A tuning electrode may be disposed between the conductive gas distributor and the chamber body for adjusting a ground pathway of the plasma. A second tuning electrode may be coupled to the substrate support, and a bias electrode may also be coupled to the substrate support. | 03-27-2014 |
20140118751 | PECVD PROCESS - A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants. | 05-01-2014 |
20140158048 | METHOD AND APPARATUS FOR CLEANING A CVD CHAMBER - The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power. | 06-12-2014 |
20140261168 | MULTIPLE CHAMBER MODULE AND PLATFORM IN SEMICONDUCTOR PROCESS EQUIPMENT - Embodiments of the present invention generally relate to a cluster tool for processing semiconductor substrates. In one embodiment, a cluster tool having four to six process chambers connected to a transfer chamber and each process chamber may simultaneously process two or three substrates. | 09-18-2014 |
20140261178 | PEALD APPARATUS TO ENABLE RAPID CYCLING - Methods and apparatus for forming thin films are described. A semiconductor processing chamber includes a substrate support, an electrode opposite the substrate support, the electrode having a gas inlet in a peripheral region thereof, and an edge ring disposed around a peripheral region of the substrate support, the edge ring having a first barrier and a second barrier, wherein each of the first barrier and the second barrier mates with a recess in the electrode. The edge ring provides a gas flow path through a processing zone between the substrate support and the electrode that is substantially parallel to the upper surface of the substrate support. The electrode may be powered to enhance formation of a film on a substrate. | 09-18-2014 |
20140261703 | METHOD TO DETECT VALVE DEVIATION - Methods for detecting valve leakage and apparatus for the same are provided. In one embodiment, a method for detecting a valve leakage includes flowing a gas through a diverter valve, determining a pressure in a gas source provided to the diverter valve, comparing the determined pressure value with an expected pressure value, and generating a signal in response to the comparison. | 09-18-2014 |
20140262037 | TRANSPARENT YTTRIA COATED QUARTZ SHOWERHEAD - Embodiments of the invention generally relate to a quartz showerhead having an aerosol-deposited yttria coating thereon. The yttria coating is sprayed on the quartz surface of the showerhead through a high pressure nozzle in a vacuum chamber. The yttria coating is transparent in the UV wavelength range, and allows the passage of UV light therethrough. The yttria coating erodes significantly slower than quartz in the presence of a cleaning gas, and thus extends the life of the quartz showerhead while facilitating the transmittance of UV light through the showerhead. | 09-18-2014 |
20140263272 | YTTRIA-BASED MATERIAL COATED CHEMICAL VAPOR DEPOSITION CHAMBER HEATER - Embodiments of the present invention generally relate to heated substrate supports having a protective coating thereon. The protective coating is formed from yttrium oxide at a molar concentration ranging from about 50 mole percent to about 75 mole percent; zirconium oxide at a molar concentration ranging from about 10 mole percent to about 30 mole percent; and at least one other component, selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, at a molar concentration ranging from about 10 mole percent to about 30 mole percent. The alloying of yttrium oxide with a compatible oxide improves wear resistance, flexural strength, and fracture toughness of the protective coating, relative to pure yttrium oxide. | 09-18-2014 |
20140263275 | ROTATION ENABLED MULTIFUNCTIONAL HEATER-CHILLER PEDESTAL - Embodiments of the present disclosure provide apparatus and methods for improving process uniformity. Particularly, embodiments of the present disclosure provide a rotatable temperature controlled substrate support for a semiconductor processing chamber. The rotatable temperature controlled substrate support includes one or more heating elements, one or more temperature sensors and cooling channels for circulating a cooling/heating fluid in the rotatable temperature controlled substrate support. One embodiment of the present disclosure includes a thermocouple extension assembly for extending cold junctions of the thermocouple in the substrate support away from the substrate support. The thermocouple extension assembly includes extension cords formed from materials matching with the materials of thermocouple. | 09-18-2014 |
20140264059 | LIGHT IRRADIANCE AND THERMAL MEASUREMENT IN UV AND CVD CHAMBERS - Embodiments of a semiconductor processing chamber described herein include a substrate support, a source of radiant energy opposite the substrate support, a window between the source of radiant energy and the substrate support, a detector sensitive to the radiant energy positioned to detect the radiant energy transmitted by the window, and a detector sensitive to radiation emitted by the substrate positioned to detect radiation emitted by the substrate. The chamber may also include a showerhead. The substrate support may be between the detectors and the window. A second radiant energy source may be included to project energy through the window to a detector. The second radiant energy source may also be located proximate the first radiant energy source and the detectors. | 09-18-2014 |
20140272341 | THERMAL TREATED SANDWICH STRUCTURE LAYER TO IMPROVE ADHESIVE STRENGTH - A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a processing chamber. The processing chamber includes a substrate support assembly disposed in the bottom portion of the processing chamber, a gas distribution system configured to provide gas into the processing chamber above the substrate support assembly, a removable liner layer the chamber interior walls. An adhesion layer is disposed on the substrate support. A protective layer is disposed on the adhesion layer. Pluralities of intermediate layers are created between the substrate support layer and the adhesion layer, and the adhesion layer and the protective layer through a thermal treatment in a non-reactive environment. | 09-18-2014 |
20140274653 | PLASMA EROSION RESISTED TRANSPARENT Mg-Al-Y-Si-O - Embodiments of the invention generally relate to a transparent material having an increased resistance to plasma erosion. The material is formed from yttrium oxide (Y | 09-18-2014 |
20140287593 | HIGH THROUGHPUT MULTI-LAYER STACK DEPOSITION - Methods and apparatus for high rate formation of multi-layer stacks on semiconductor substrate is provided. A chamber for forming such stacks at high rates includes a first precursor line and a second precursor line. The first precursor line is coupled to a first diverter, which is coupled to a gas inlet in a lid assembly of the chamber. The second precursor line is coupled to a second diverter, which is also coupled to the gas inlet. The first diverter is also coupled to a first divert line, and the second diverter is coupled to a second divert line. Each of the first and second divert lines is coupled to a divert exhaust system. A chamber exhaust system is coupled to the chamber. The diverters are typically located close to the lid assembly. | 09-25-2014 |
20140290576 | METHOD AND APPARATUS FOR TUNING ELECTRODE IMPEDANCE FOR HIGH FREQUENCY RADIO FREQUENCY AND TERMINATING LOW FREQUENCY RADIO FREQUENCY TO GROUND - Embodiments of the present invention relate to apparatus for improving uniformity and film stress of films deposited during plasma process of a substrate. According to embodiments, the apparatus includes a tuning electrode and/or a tuning ring electrically coupled to a variable capacitor for tuning high frequency RF impedance of the electrode and a low frequency RF termination to ground. The plasma profile and resulting film thickness can be controlled by adjusting the capacitance of the variable capacitor and the resulting impedance of the tuning electrode. The film stress of the film deposited on the substrate can be controlled, i.e., increased, by terminating the low frequency RF during processing. | 10-02-2014 |
20140302256 | HIGH IMPEDANCE RF FILTER FOR HEATER WITH IMPEDANCE TUNING DEVICE - Embodiments provide a plasma processing apparatus, substrate support assembly, and method of controlling a plasma process. The apparatus and substrate support assembly include a substrate support pedestal, a tuning assembly that includes a tuning electrode that is disposed in the pedestal and electrically coupled to a radio frequency (RF) tuner, and a heating assembly that includes one or more heating elements disposed within the pedestal for controlling a temperature profile of the substrate, where at least one of the heating elements is electrically coupled to an RF filter circuit that includes a first inductor configured in parallel with a formed capacitance of the first inductor to ground. The high impedance of the RF filters can be achieved by tuning the resonance of the RF filter circuit, which results in less RF leakage and better substrate processing results. | 10-09-2014 |