Patent application number | Description | Published |
20110226208 | SWITCHING ROCKER ARM - A rocker arm for engaging a cam is disclosed. An outer arm and inner arm are configured to transfer motion to a valve of an internal combustion engine. A latching mechanism includes a latch, sleeve and orientation member. The sleeve engages the latch and a bore in the inner arm, and also provides an opening for an orientation member used in providing the correct orientation for the latch with respect to the sleeve and the inner arm. The sleeve, latch and inner arm have reference marks used to determine the optimal orientation for the latch. | 09-22-2011 |
20110226209 | SWITCHING ROCKER ARM - A rocker arm for engaging a cam is disclosed. An outer arm and inner arm are configured to transfer motion to a valve of an internal combustion engine. A latching mechanism includes a latch, sleeve and orientation member. The sleeve engages the latch and a bore in the inner arm, and also provides an opening for an orientation member used in providing the correct orientation for the latch with respect to the sleeve and the inner arm. The sleeve, latch and inner arm have reference marks used to determine the optimal orientation for the latch. | 09-22-2011 |
20130312687 | ROCKER ARM ASSEMBLY AND COMPONENTS THEREFOR - A method of precision manufacture of an outer arm of a rocker arm assembly is performed by determining structures of a rough outer arm that would require precision processing and locations to support the structures as they are processed. Starting with at least one structure requiring precision processing, locations on the outer arm close to the structure to hold the outer arm during processing are determined that would cause minimal distortion of the outer arm during processing. The outer arm is then provided with clamping lobes at these locations. The clamping lobes of the outer arm are clamping into a fixture for manufacturing. The slider pad may now be precision ground while the outer arm is clamped in the fixture with minimal risk of distortion of the outer arm. | 11-28-2013 |
20130312689 | ROCKER ARM ASSEMBLY AND COMPONENTS THEREFOR - A switching rocker arm having an outer arm having a first end, a second end, a first and second outer side arm having slider pads that ride on a second cam is disclosed. The switching rocker arm also has an inner arm disposed between the first and second outer side arms. The inner arm has a first end, a second end and a bearing disposed between the first and second end adapted to ride along a first cam. The inner arm is pivotably secured adjacent its first end to the outer arm adjacent its first end. At least one arm has an over-travel limiter structure limits pivoting motion of the first arm relative to the second arm. The switching rocker arm also exhibits decreased lash as the bearing wears, and increased lash as the latch and slider pads wear. | 11-28-2013 |
20140290608 | LATCH PIN ASSEMBLY; ROCKER ARM ARRANGEMENT USING LATCH PIN ASSEMBLY; AND ASSEMBLING METHODS - A rocker arm for engaging a cam in a valve actuation arrangement includes a latch pin assembly having includes a latch pin, retainer, and biasing mechanism. The latch pin has a pin body with a head and a tail at the second end; the body defining an open volume; the tail having an open mouth in communication with the open volume of the body; and the open volume having a non-circular cross-section. The retainer has a male engagement portion and an outer portion. The male engagement portion is within the open volume of the body through the open mouth. The male engagement portion has a non-circular cross section. The outer portion is non-removably secured to an outer arm of the rocker arm. The biasing mechanism is oriented in the open volume of the body and between and against the latch pin and the retainer. | 10-02-2014 |
20150267574 | DEVELOPMENT OF A SWITCHING ROLLER FINGER FOLLOWER FOR CYLINDER DEACTIVATION IN INTERNAL COMBUSTION ENGINES - A system for selectively deactivating engine valves of a cylinder of an internal combustion engine. The system employs switching rocker assemblies between the valves of the engine and rotating cam lobes. The disclosed design is able to operate using a single cam lobe per valve. The rocker assembly employs a first arm pivotally attached to a second arm at one end. The first arm engages the valve and the second arm has a roller bearing that engages the cam lobe. A latch causes the first and second arm to move in unison following the cam surface when latched. When unlatched, the second arm follows and moves according to the rotating cam surface, but the first arm does not follow and does not actuate the valve, thereby deactivating the cylinder. | 09-24-2015 |
Patent application number | Description | Published |
20120119260 | Methods of Forming Semiconductor Contacts and Related Semiconductor Devices - Methods of forming semiconductor devices having customized contacts are provided including providing a first insulator layer and patterning the first insulator layer such that the first insulator layer defines at least one contact window. A second insulator layer is provided on the first insulator layer and in the at least one contact window such that the second insulator layer at least partially fills the at least one contact window. A first portion of the second insulator layer is etched such that a second portion of the second insulator layer remains in the at least one contact window to provide at least one modified contact window having dimensions that are different than dimensions of the at least one contact window. Related methods and devices are also provided. | 05-17-2012 |
20140103363 | USING STRESS REDUCTION BARRIER SUB-LAYERS IN A SEMICONDUCTOR DIE - A semiconductor die, which includes a substrate, a group of primary conduction sub-layers, and a group of separation sub-layers, is disclosed. The group of primary conduction sub-layers is over the substrate. Each adjacent pair of the group of primary conduction sub-layers is separated by at least one of the group of separation sub-layers. As a result, the group of separation sub-layers mitigates grain growth in the group of primary conduction sub-layers. | 04-17-2014 |
20140124792 | NI-RICH SCHOTTKY CONTACT - Embodiments of a Nickel-rich (Ni-rich) Schottky contact for a semiconductor device and a method of fabrication thereof are disclosed. Preferably, the semiconductor device is a radio frequency or power device such as, for example, a High Electron Mobility Transistor (HEMT), a Schottky diode, a Metal Semiconductor Field Effect Transistor (MESFET), or the like. In one embodiment, the semiconductor device includes a semiconductor body and a Ni-rich Schottky contact on a surface of the semiconductor body. The Ni-rich Schottky contact includes a multilayer Ni-rich contact metal stack. The semiconductor body is preferably formed in a Group III nitride material system (e.g., includes one or more Gallium Nitride (GaN) and/or Aluminum Gallium Nitride (AlGaN) layers). Because the Schottky contact is Ni-rich, leakage through the Schottky contact is substantially reduced. | 05-08-2014 |
20140175664 | DIELECTRIC SOLDER BARRIER FOR SEMICONDUCTOR DEVICES - The present disclosure relates to a dielectric solder barrier for a semiconductor die. In one embodiment, a semiconductor die includes a substrate, a semiconductor body on a first surface of the substrate, one or more first metallization layers on the semiconductor body opposite the substrate, a via that extends from a second surface of the substrate through the substrate and the semiconductor body to the one or more first metallization layers, and a second metallization layer on the second surface of the substrate and within the via. A portion of the second metallization layer within the via provides an electrical connection between the second metallization layer and the one or more first metallization layers. The semiconductor die further includes a dielectric solder barrier on the second metallization layer. Preferably, the dielectric solder barrier is on a surface of the portion of the second metallization layer within the via. | 06-26-2014 |
20140246699 | TUNNEL JUNCTION FIELD EFFECT TRANSISTORS HAVING SELF-ALIGNED SOURCE AND GATE ELECTRODES AND METHODS OF FORMING THE SAME - Methods of forming a transistor include providing a semiconductor epitaxial structure including a channel layer and barrier layer on the channel layer, forming a gate electrode on the barrier layer, etching the semiconductor epitaxial structure using the gate electrode as an etch mask to form a trench in the semiconductor epitaxial structure, and depositing a source metal in the trench. The trench extends at least to the channel layer, and the source metal forms a Schottky junction with the channel layer. Related semiconductor device structures are also disclosed. | 09-04-2014 |
20140264381 | SEMICONDUCTOR DEVICE WITH SELF-ALIGNED OHMIC CONTACTS - A method of fabricating a semiconductor device includes providing one or more semiconductor layers, providing a gate contact on a first surface of the one or more semiconductor layers, then using the gate contact as a mask to deposit a source contact and a drain contact on the first surface of the one or more semiconductor layers, such that the source contact and the drain contact include an interior edge that is laterally aligned with a different lateral edge of the gate contact. | 09-18-2014 |
20140264713 | GATE CONTACT FOR A SEMICONDUCTOR DEVICE AND METHODS OF FABRICATION THEREOF - Embodiments of a gate contact for a semiconductor device and methods of fabrication thereof are disclosed. In one embodiment, a semiconductor device includes a semiconductor structure and a dielectric layer on a surface of the semiconductor structure, where the dielectric layer has an opening that exposes an area of the semiconductor structure. A gate contact for the semiconductor device is formed on the exposed area of the semiconductor structure through the opening in the dielectric layer. The gate contact includes a proximal end on a portion of the exposed area of the semiconductor structure, a distal end opposite the proximal end, and sidewalls that each extend between the proximal end and the distal end of the gate contact. For each sidewall of the gate contact, an air region separates the sidewall and the distal end of the gate contact from the dielectric layer. | 09-18-2014 |
20140264868 | WAFER-LEVEL DIE ATTACH METALLIZATION - Embodiments of a semiconductor wafer having wafer-level die attach metallization on a back-side of the semiconductor wafer, resulting semiconductor dies, and methods of manufacturing the same are disclosed. In one embodiment, a semiconductor wafer includes a semiconductor structure and a front-side metallization that includes front-side metallization elements for a number of semiconductor die areas. The semiconductor wafer also includes vias that extend from a back-side of the semiconductor structure to the front-side metallization elements. A back-side metallization is on the back-side of the semiconductor structure and within the vias. For each via, one or more barrier layers are on a portion of the back-side metallization that is within the via and around a periphery of the via. The semiconductor wafer further includes wafer-level die attach metallization on the back-side metallization other than the portions of the back-side metallization that are within the vias and around the peripheries of the vias. | 09-18-2014 |
20140361341 | CASCODE STRUCTURES FOR GaN HEMTs - A multi-stage transistor device is described. One embodiment of such a device is a dual-gate transistor, where the second stage gate is separated from a barrier layer by a thin spacer layer and is grounded through a connection to the source. In one embodiment the thin spacer layer and the second stage gate are placed in an aperture in a spacer layer. In another embodiment, the second stage gate is separated from a barrier layer by a spacer layer. The device can exhibit improved linearity and reduced complexity and cost. | 12-11-2014 |
20140361342 | RECESSED FIELD PLATE TRANSISTOR STRUCTURES - A transistor device including a field plate is described. One embodiment of such a device includes a field plate separated from a semiconductor layer by a thin spacer layer. In one embodiment, the thickness of spacer layer separating the field plate from the semiconductor layers is less than the thickness of spacer layer separating the field plate from the gate. In another embodiment, the non-zero distance separating the field plate from the semiconductor layers is about 1500 Å or less. Devices according to the present invention can show capacitances which are less drain bias dependent, resulting in improved linearity. | 12-11-2014 |
20150140806 | WAFER-LEVEL DIE ATTACH METALLIZATION - Embodiments of a semiconductor wafer having wafer-level die attach metallization on a back-side of the semiconductor wafer, resulting semiconductor dies, and methods of manufacturing the same are disclosed. In one embodiment, a semiconductor wafer includes a semiconductor structure and a front-side metallization that includes front-side metallization elements for a number of semiconductor die areas. The semiconductor wafer also includes vias that extend from a back-side of the semiconductor structure to the front-side metallization elements. A back-side metallization is on the back-side of the semiconductor structure and within the vias. For each via, one or more barrier layers are on a portion of the back-side metallization that is within the via and around a periphery of the via. The semiconductor wafer further includes wafer-level die attach metallization on the back-side metallization other than the portions of the back-side metallization that are within the vias and around the peripheries of the vias. | 05-21-2015 |
20150236017 | METHOD OF MANUFACTURING PRECISE SEMICONDUCTOR CONTACTS - A first dielectric layer including a first opening is provided on a first surface of a semiconductor layer. A second dielectric layer is provided on top of the first dielectric layer in the first opening. A first portion of the second dielectric layer is then removed, such that a second portion of the second dielectric layer remains in the first opening. The first dielectric layer is then removed, leaving only the second portion of the second dielectric layer on the surface of the semiconductor layer. An epitaxial layer or a base dielectric layer is grown on the exposed portions of the first surface of the semiconductor layer not covered by the second portion of the second dielectric layer. The second portion of the second dielectric layer is then removed to define one or more contact windows, and a contact metal is deposited in the one or more contact windows. | 08-20-2015 |
Patent application number | Description | Published |
20090107606 | Tire For Heavy Vehicles - A tire having a radial carcass reinforcement comprising a crown reinforcement formed of at least two working crown layers of inextensible reinforcement elements, which are crossed from one ply to the other, forming angles of between 10° and 45° with the circumferential direction, which itself is topped radially by a tread, said tread being joined to two beads by means of two sidewalls and at least two working layers having different axial widths. At least one first profiled element P of rubber mix separates one working layer from at least one end of a second, axially narrower, layer, said profiled element P being radially separated at least in part from the liner C of said axially narrower working layer by a second profiled element of rubber mix G, said first and second profiled elements of rubber mix P and G and said liner C having secant moduli of elasticity under tension at | 04-30-2009 |
20090120550 | Tire For Heavy Vehicles - A tire having a radial carcass reinforcement comprising a crown reinforcement formed of at least two working crown layers of inextensible reinforcement elements, which are crossed from one ply to the other, forming angles of between 10° and 45° with the circumferential direction, which itself is topped radially by a tread, said tread being joined to two beads by means of two sidewalls and the axially widest working crown layer being radially internal to the other working crown layers and a layer P of cohesive rubber mixes being arranged between at least part of the working crown layers. The tire additionally comprises in each shoulder at least one layer of reinforcement elements which are parallel to each other in the layer and are oriented circumferentially, the axially inner end of said additional layer being radially adjacent to the edge of a working crown layer, at least part of said additional layer being radially and/or axially adjacent to the edge of the axially widest working crown layer and the ratio of the elasticity modulus of the layer P to the elasticity modulus of the calendering layer of the working layer adjacent to the additional layer being of between 0.5 and 1. | 05-14-2009 |
20090126848 | Tire for Heavy Vehicles - A tire having a radial carcass reinforcement comprising a crown reinforcement formed of at least two working crown layers of inextensible reinforcement elements, which are crossed from one ply to the other, forming angles of between 10° and 45° with the circumferential direction, which itself is topped radially by a tread, said tread being joined to two beads by means of two sidewalls and the axially widest working crown layer being radially internal to the other working crown layers. The tire comprises additionally in each shoulder at least one layer of reinforcement elements which are parallel to each other in the layer and are oriented circumferentially, the axially inner end of said additional layer being radially adjacent to the edge of a working crown layer, at least part of said additional layer being radially and/or axially adjacent to the edge of the axially widest working crown layer and the axially outer end of said additional layer being radially internal to the axially widest working crown layer. | 05-21-2009 |
20090272477 | Tire for Heavy Vehicles - A tire having a radial carcass reinforcement comprising a crown reinforcement formed of at least two working crown layers of inextensible reinforcement elements, which are crossed from one ply to the other, forming angles of between 10° and 45° with the circumferential direction, which itself is topped radially by a tread, said tread being joined to two beads by means of two sidewalls and at least two working layers having different axial widths. At least one first profiled element P of rubber mix separates one working layer from at least one end of a second, axially narrower, layer, said profiled element P being radially separated at least in part from the liner C of said axially narrower working layer by a second profiled element of rubber mix G, said first and second profiled elements of rubber mix P and G and said liner C having secant moduli of elasticity under tension at 10% elongation MP, MG, MC respectively such that MC≧MG>MP, said tire additionally comprising in each shoulder at least one layer of reinforcement elements, which are parallel to each other in the additional layer and are oriented circumferentially, and the axially inner end of said additional layer being radially adjacent to the edge of at least one working crown layer. | 11-05-2009 |
Patent application number | Description | Published |
20110030863 | TIRE WITH APERTURED SHOULDER BLOCK FOR IMPROVED TEMPERATURE CONTROL - A tire is provided having a plurality of shoulder blocks separated by axial grooves and located along at least one side of the tire. Apertures extend through the shoulder blocks to connect with a circumferential groove. The apertures are located within a certain radial position relative to the axial grooves. Each aperture has a bottom positioned at a radial depth HB relative to the shoulder block and extends completely through the shoulder block along the axial direction. Each aperture has a radial overlap HL with the axial grooves. The ratio HL/Ho is about 0.15 or less and the ratio of HB/Ho is in the range of about 1.0 to about 1.1. | 02-10-2011 |
20110094641 | TIRE WITH LAMELLE IN BRIDGE - A tire is provided having features in the tread elements that provide improved resistance to wear and, more particularly, irregular wear. More specifically, lamellae are provided along tread elements of the tire and between such tread elements to provide for improved wear patterns and particularly to provide resistance to irregular wear at the leading and trailing edges of the tread element. | 04-28-2011 |
20110290388 | TIRE WITH SIDE FEATURES FOR RESISTING IRREGULAR SHOULDER WEAR - A tire is provided having features on the side of the tire that provide improved protection against irregular wear. More specifically, apertures provided at certain depths, densities, and locations along the side of the tire can provide for improved wear patterns, including a decrease in irregular shoulder wear, particularly in regional applications. The apertures can be constructed as holes or incisions in various shapes and combinations. | 12-01-2011 |