Kikuchi, Nirasaki-Shi
Eiichiro Kikuchi, Nirasaki-Shi JP
Patent application number | Description | Published |
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20080217291 | SUBSTRATE MOUNTING STAGE AND SURFACE TREATMENT METHOD THEREFOR - A substrate mounting stage that prevents poor attraction of substrates so as to improve the operating rate of a substrate processing apparatus. The substrate mounting stage is disposed in the substrate processing apparatus and has a substrate mounting surface on which a substrate is mounted. The arithmetic average roughness (Ra) of the substrate mounting surface is not less than a first predetermined value, and the initial wear height (Rpk) of the substrate mounting surface is not more than a second predetermined value. | 09-11-2008 |
20080237030 | SURFACE PROCESSING METHOD FOR MOUNTING STAGE - A surface processing method for a mounting stage, which enables a mounting surface conforming to a substrate to be formed while saving time and effort. The substrate is mounted on a mounting surface of the mounting stage disposed in a housing chamber of a substrate processing apparatus that carries out plasma processing on the substrate. The mounted substrate is thermally expanded. | 10-02-2008 |
20080280536 | SURFACE TREATMENT METHOD - A surface treatment method that enables a surface of an electrostatic chuck to be smoothed, so as to improve the efficiency of heat transfer between the surface of the electrostatic chuck and a substrate. The electrostatic chuck is provided in an upper portion of a susceptor provided in a chamber of a substrate processing apparatus. In the surface treatment of the electrostatic chuck, a sprayed coating film is formed on the surface of the electrostatic chuck, next the surface of the electrostatic chuck is ground by bringing into contact therewith a grindstone, then the surface of the electrostatic chuck is ground flat by bringing into contact therewith a lapping plate onto a surface of which is sprayed a suspension, and then the surface of the electrostatic chuck is ground smooth by bringing into contact therewith a tape of a tape lapping apparatus. | 11-13-2008 |
Kiyotaka Kikuchi, Nirasaki-Shi JP
Patent application number | Description | Published |
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20100189927 | FILM FORMATION APPARATUS AND METHOD FOR USING SAME - A method for using a film formation apparatus includes performing a main cleaning process and a post cleaning process in this order inside a reaction chamber. The main cleaning process is arranged to supply a cleaning gas containing fluorine into the reaction chamber while exhausting gas from inside the reaction chamber, thereby etching a film formation by-product containing silicon. The post cleaning process is arranged to remove a silicon-containing fluoride generated by the main cleaning process and remaining inside the reaction chamber and to alternately repeat, a plurality of times, supplying an oxidizing gas into the reaction chamber to transform the silicon-containing fluoride into an intermediate product by oxidization, and supplying hydrogen fluoride gas into the reaction chamber while exhausting gas from inside the reaction chamber to remove the intermediate product by a reaction between the hydrogen fluoride gas and the intermediate product. | 07-29-2010 |
Takamichi Kikuchi, Nirasaki-Shi JP
Patent application number | Description | Published |
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20080216957 | PLASMA PROCESSING APPARATUS, CLEANING METHOD THEREOF, CONTROL PROGRAM AND COMPUTER STORAGE MEDIUM - A cleaning method for a plasma processing apparatus includes introducing a cleaning gas containing Cl | 09-11-2008 |
20080305632 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND STORAGE MEDIUM - A substrate processing apparatus is provided to enable to efficiently remove an oxide layer and an organic material layer. A third process unit ( | 12-11-2008 |
20110033636 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND STORAGE MEDIUM STORING PROGRAM FOR IMPLEMENTING THE METHOD - A substrate processing apparatus that enables an oxide layer and an organic layer to be removed efficiently. A substrate formed at its surface with an organic layer covered with the oxide layer is housed in a chemical reaction processing apparatus of the substrate processing apparatus, in which the oxide layer is subjected to chemical reaction with gas molecules, and thus a product is produced on the substrate surface. The substrate is heated in a chamber of a heat treatment apparatus of the substrate processing apparatus, whereby the product is vaporized and the organic layer is exposed. Microwaves are then introduced into the chamber into which oxygen gas is supplied, whereby there are produced oxygen radicals that decompose and remove the organic layer. | 02-10-2011 |
Toshihiko Kikuchi, Nirasaki-Shi JP
Patent application number | Description | Published |
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20080297801 | METHOD FOR CALCULATING OPTICAL CONSTANTS AND SUBSTRATE PROCESSING SYSTEM - An optical constant calculation method capable of calculating an accurate optical constant of an underlayer film to accurately identify a substrate surface structure. After each of films is layered on a wafer, there are measured the reflectivity of an oxide film under which an organic insulation film is formed and the reflectivity of an organic insulation film exposed after removal by plasma of the oxide film. Based on the measured reflectivities, the optical constant of the organic insulation film after being altered by heat treatment and the optical constant of the organic insulation film after being altered by plasma are calculated. | 12-04-2008 |
20100133231 | Processing method and processing system - The present invention is a processing method including a processing step of performing predetermined processing for a workpiece; an unnecessary portion removal step of removing an unnecessary portion produced on a surface of the workpiece due to the predetermined processing; and a surface structure evaluation step of evaluating a surface structure of the workpiece from which the unnecessary portion has been removed by the unnecessary portion removal step. | 06-03-2010 |