Tawarayama
Haruka Tawarayama, Osaka JP
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20160023110 | GAME DEVICE - In such a timing game that a user taps on a collision position at a time when fore ends of a line object | 01-28-2016 |
Hiromasa Tawarayama, Tokyo JP
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20080216514 | Process for the production of glass molded article, optical element produced by the process, and method of treating glass - Provided are a process for the production of a precision press-molded article having a high transmittance and a method of treating a glass to color or decolor the glass, the process comprising heat-treating a press-molded article containing at least one selected from WO | 09-11-2008 |
20120151964 | PROCESS FOR THE PRODUCTION OF GLASS MOLDED ARTICLE, OPTICAL ELEMENT PRODUCED BY THE PROCESS, AND METHOD OF TREATING GLASS - Provided are a process for the production of a precision press-molded article having a high transmittance and a method of treating a glass to color or decolor the glass, the process comprising heat-treating a press-molded article containing at least one selected from WO | 06-21-2012 |
Hiromasa Tawarayama, Yokohama-Shi JP
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20130022509 | SILICA-BASED HYDROGEN SEPARATION MATERIAL AND MANUFACTURING METHOD THEREFOR, AS WELL AS HYDROGEN SEPARATION MODULE AND HYDROGEN PRODUCTION APPARATUS HAVING THE SAME - An object of the present invention is to provide a hydrogen separation material resistant to thermal shock, excellent in hydrogen separation characteristic and applicable to a hydrogen separation membrane, etc. and a manufacturing method thereof, as well as a hydrogen separation module and a hydrogen production apparatus comprising the same. | 01-24-2013 |
Kazuo Tawarayama, Tsukuba-Shi JP
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20090095711 | MICROFABRICATION APPARATUS AND DEVICE MANUFACTURING METHOD - A microfabrication apparatus for pressing an original plate including a pattern down on a substrate to transfer the pattern on the substrate includes a first measurement unit for measuring relative positional displacement between the substrate and the plate above the substrate, a position correction unit for correcting relative position between the substrate and the plate such that the pattern is to be transferred on a first predetermined position of the substrate based on the relative positional displacement measured by the first measurement unit, a pressing unit for pressing the plate above the substrate down on the substrate to transfer the pattern on the substrate in a state that the relative positional displacement between the substrate and the plate is corrected by the position correction unit, and a second measurement unit for measuring relative positional relationship between the pattern transferred on the substrate and a pattern previously formed on the substrate. | 04-16-2009 |
20090141378 | OPTICAL ELEMENT AND OPTICAL APPARATUS - An optical element includes a substrate, a magnetostrictive film arranged on the substrate, a film thickness of the magnetostrictive film varying in accordance with intensity of a magnetic field, and a reflection film arranged on the magnetostrictive film and reflects light. An optical apparatus includes a stage including a holder provided with plural holes arranged in a carrying surface thereof for carrying an optical element provided with a magnetostrictive film arranged on a substrate, a film thickness of the magnetostrictive film varying in accordance with intensity of a magnetic field, and a reflection film arranged on the magnetostrictive film and reflecting light, plural magnetic field generation parts embedded in the plural holes, and a control mechanism for controlling the magnetic field generated by each of the plural magnetic field generation parts, and controlling the film thickness of the magnetostrictive film. | 06-04-2009 |
20100193712 | EXTREME ULTRAVIOLET LIGHT SOURCE APPARATUS AND METHOD OF ADJUSTING THE SAME - An extreme ultraviolet light source apparatus includes a main body including a supply section to which an extreme ultraviolet radiation seed is supplied, and an emission part configured to emit extreme ultraviolet, an excitation unit provided in the main body and configured to generate a plasma by exciting the extreme ultraviolet radiation seed, an optical condensing unit provided in the main body and configured to converge extreme ultraviolet, which is radiated from the plasma, at the emission part, a trap provided between the excitation unit and the optical condensing unit, a first positioning mechanism connected to the trap and configured to adjust at least one of a position and an angle of the trap, and a measuring unit configured to measure a far field distribution image of the plasma on the basis of the extreme ultraviolet which is emitted from the emission part, thereby to operate the first positioning mechanism. | 08-05-2010 |
20110285975 | METHOD OF MANAGING EUV EXPOSURE MASK AND EXPOSURE METHOD - According to one embodiment, there is provided a method of managing an EUV exposure mask to manage a cleaning period of the EUV exposure mask set in an exposure apparatus, including obtaining mark profile signals corresponding to two different directions of an alignment mark provided on the mask by irradiating the mark with EUV light and detecting light reflected by the mask, measuring dimensions of the mark in the two different directions from the obtained mark profile signals, calculating a difference between the measured dimensions in the two different directions, and determining the cleaning period of the mask based on the calculated difference. | 11-24-2011 |
Kazuo Tawarayama, Mie-Ken JP
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20140061969 | PATTERNING METHOD AND TEMPLATE - According to one embodiment, a patterning method includes releasing the template from the cured imprint resist, aligning an alignment mark formed in the non-imprint portion of the template with the transfer pattern of the alignment pattern without causing the alignment mark to contact the imprint resist, and causing the main pattern and the alignment pattern of the template to contact an imprint resist that is supplied to a shot region adjacent to the cured imprint resist and uncured. The method includes curing the imprint resist of the adjacent shot region in the state of the template being in contact to form the transfer pattern of the main pattern and the transfer pattern of the alignment pattern in the imprint resist. | 03-06-2014 |
Kazuo Tawarayama, Yokkaichi-Shi JP
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20150183059 | PATTERN SHAPE ADJUSTMENT METHOD, PATTERN SHAPE ADJUSTMENT SYSTEM, EXPOSURE APPARATUS, AND RECORDING MEDIUM - In a pattern shape adjustment method according to one embodiment, a correspondence relation between a first shape feature amount of a first on-substrate pattern formed on a first substrate and a first laser band width of laser light as exposure light used when forming the first on-substrate pattern is acquired. Also, a second shape feature amount of a second on-substrate pattern actually formed on a second substrate is measured. Then, a second laser band width according to the shape of a third on-substrate pattern to be formed on a third substrate is calculated based on the correspondence relation and the second shape feature amount. Further, the third substrate is exposed to laser light having the second laser band width. | 07-02-2015 |
20150227054 | EXTREME ULTRAVIOLET RADIATION EXPOSURE APPARATUS AND METHOD OF LITHOGRAPHY THEREBY - According to one embodiment, an EUV radiation exposure apparatus includes a vacuum chamber, an EUV radiation exposing light source installed in the vacuum chamber, and an ionizer that generates positive or negative ions. The ionizer is installed in the vacuum chamber and is driven with driving of the EUV radiation exposing light source. | 08-13-2015 |
Kazuo Tawarayama, Yokosuka-Shi JP
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20080293169 | LITHOGRAPHY EVALUATING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND PROGRAM MEDIUM - A lithography evaluating method comprises preparing a substrate, the substrate including a semiconductor substrate and a wiring structure including at least one wiring layer formed on the semiconductor substrate, partitioning the substrate into a plurality of regions to be evaluated, and obtaining a value of property relating to the wiring structure previously, and evaluating proximity effect on each of the plurality of regions to be evaluated based on the value of the property relating to the wiring structure. | 11-27-2008 |