Tanpairoj
Ken Tanpairoj, Stanford, CA US
Patent application number | Description | Published |
---|---|---|
20090154235 | REDUCED STATE QUADBIT - A reduced state memory device and methods of forming and programming multi-level flash memory cell element-pairs of the device, each element configured to store a blank level or two or more program levels are provided. In one embodiment, the reduced state memory device comprises a component configured to store in the memory cell element-pairs one pattern combination of a plurality of program pattern combinations comprising two blank levels, two program levels, and one blank level and one program level, the levels differing by less than a predetermined value. In one embodiment, a method of forming a memory device comprises forming at least one memory device of a multi-level flash memory array, each memory cell comprising two or more memory elements, each memory element configured to store three or more levels, and excluding one or more program pattern combinations that can be stored in the at least one memory cell. | 06-18-2009 |
Kulachet Tanpairoj, Stanford, CA US
Patent application number | Description | Published |
---|---|---|
20090103357 | FAST SINGLE PHASE PROGRAM ALGORITHM FOR QUADBIT - Methods of rapidly programming a wordline of multi-level flash memory cells comprising memory cell element-pairs having three or more data levels per bit or element corresponding to three or more threshold voltages are provided. An interactive program algorithm rapidly programs the elements of the wordline of memory cells in a learn phase and a single core programming phase. In one embodiment, each wordline comprises learn element-pairs first programmed to provide learn drain voltages for programming core element-pairs along the wordline having the same program pattern of data levels. A set comprising one or more program patterns is chosen to correspond with each program level used on the wordline. The learn element-pairs are programmed to determine a learned program drain voltage for each program level. This learned program drain voltage essentially provides a wordline and program level specific program characterization of the Vd required for the remaining elements of that wordline. | 04-23-2009 |
Kulachet Tanpairoj, Santa Clara, CA US
Patent application number | Description | Published |
---|---|---|
20140029342 | EXPERIENCE COUNT DEPENDENT PROGRAM ALGORITHM FOR FLASH MEMORY - In a non-volatile memory device, the parameters used in write and erase operation are varied based upon device age. For example, in a programming operation using a staircase waveform, the amplitude of the initial pulse can be adjusted based upon the number of erase-program cycles (hot count) of the block containing the selected physical page for the write. This arrangement can preserve performance for relatively fresh devices, while extending life as a devices ages by using gentler waveforms as the device ages. | 01-30-2014 |
20140173382 | INSPECTION OF NON-VOLATILE MEMORY FOR DISTURB EFFECTS - A method performed in a data storage device including a non-volatile memory includes reading a representation of data, the representation corresponding to one or more selected states of storage elements of a group of storage elements of the non-volatile memory. The method includes, in response to a count of errors in the representation of the data exceeding a threshold, scheduling a remedial action to be performed on the group of storage elements. | 06-19-2014 |