Ryoo, Gyeonggi-Do
Chang Woo Ryoo, Gyeonggi-Do KR
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20140322834 | APPARATUS AND METHOD FOR BONDING SUBSTRATES - An apparatus for bonding substrates and a method of bonding substrates are provided. In accordance with one exemplary embodiment of the present invention, a first plate to mount a first substrate is provided. A chamber body movably connected to the first plate is provided. A second plate that is placed opposite to the first plate and a second substrate is mounted on the second plate is provided. A chamber lead having the second plate mounted inside is provided which is movably connected to the chamber body to move rotationally or linearly to open or close the chamber space with the chamber body. A pair of first alignment cameras is placed outside of the chamber space to scan the first substrate or the second substrate. A stage control unit is provided to move the first plate or the second plate to align the first substrate and the second substrate. | 10-30-2014 |
Jea Sik Ryoo, Gyeonggi-Do KR
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20130078882 | POROUS SHEET AND METHOD FOR MANUFACTURING THE POROUS SHEET - The present invention relates to a porous sheet and a method for manufacturing the porous sheet. A porous sheet including a fine-fiber web layer and a support layer and a method for manufacturing the same are provided, and it is possible to implement a porous sheet with sufficient strength and thickness to be used in peeling and laminating processes of a multilayer ceramic capacitor. | 03-28-2013 |
Kun Kul Ryoo, Gyeonggi-Do KR
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20110081289 | METHOD FOR REGENERATING SILICON FROM SILICON WASTE AND SILICON MANUFACTURED USING THE SAME - A method for regenerating silicon from silicon waste includes: placing and mixing silicon waste, a solvent having pH of approximately 5 to approximately 6, and a surfactant within a container; and injecting air into the container to separate floating matters and precipitates. Accordingly, since silicon is easily separated from the silicon waste, the regeneration yield of silicon is increased. Since the regenerated silicon is recyclable, it may be possible to obtain important substitution effect of high-purity silicon the entire amount of which depends on import. Moreover, environmental pollution may be reduced because the amount of the silicon waste disposed of by burial is decreased. | 04-07-2011 |
Kyoo-Tae Ryoo, Gyeonggi-Do KR
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20090011701 | Link Synchronization Method Using Received Power in Rf Repeater - Provided is a link synchronization method for a radio frequency repeater that can perform link route switching at an accurate time point by measuring reception signal power at a predetermined period for a predetermined time duration, accumulating and comparing them with a reference level, and detecting a link termination time point. The method includes: a) setting up an initial link route; b) measuring received signal power in the initial link route; c) accumulating the reception signal power received for a predetermined time at a predetermined period, when the reception signal power is detected; d) setting up a reference level for link switching based on the accumulated reception signal power; e) detecting a link termination time point by finding an edge in a waveform of the accumulated reception signal power based on the reference level; and f) switching the current link route based on the detected link termination time point. | 01-08-2009 |
20090207776 | Adaptive Forward Error Corrector And Method Thereof, And TDD Radio Repeating Apparatus Using The Same - An adaptive feedback estimation and cancellation (AFEC) apparatus includes: a controller for generating and outputting control information by using a synchronization signal from an external synchronization acquisition unit and base station information, in order to remove a feedback signal that exists in a forward/reverse repeater signal to be repeated and then send the forward/reverse repeater signal; a first feedback prediction canceller for adaptively removing a feedback signal that exists in the forward repeater signal based on the control information from the controller and automatically adjusting the gain of the forward repeater signal; and a second feedback prediction canceller for adaptively removing a feedback signal that exists in the reverse repeater signal based on the control information from the controller and automatically controlling the gain of the reverse repeater signal. | 08-20-2009 |
Kyung-Chang Ryoo, Gyeonggi-Do KR
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20090101881 | SEMICONDUCTOR DEVICES HAVING PHASE CHANGE MEMORY CELLS, ELECTRONIC SYSTEMS EMPLOYING THE SAME AND METHODS OF FABRICATING THE SAME - In one embodiment, a phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a semiconductor memory device comprises a molding layer overlying a semiconductor substrate. The molding layer has a protrusion portion vertically extending from a top surface thereof. The device further includes a phase-changeable material pattern adjacent the protrusion portion and a lower electrode electrically connected to the phase-changeable material pattern. | 04-23-2009 |
20090127538 | Phase-Changeable Memory Devices Having Reduced Susceptibility to Thermal Interference - A non-volatile memory array includes an array of phase-changeable memory elements that are electrically insulated from each other by at least a first electrically insulating region extending between the array of phase-changeable memory elements. The first electrically insulating region includes a plurality of voids therein. Each of these voids extends between a corresponding pair of phase-changeable memory cells in the non-volatile memory array and, collectively, the voids form an array of voids in the first electrically insulating region. | 05-21-2009 |
20090230376 | RESISTIVE MEMORY DEVICES - Provided is a resistive memory device that can be integrated with a high integration density and method of forming the same. In an embodiment, a bit line is formed of copper using a damascene technique, and when the copper bit line, a copper stud may be formed around the copper bit line | 09-17-2009 |
20090230378 | RESISTIVE MEMORY DEVICES - Provided is a resistive memory device that can be integrated with a high integration density and method of forming the same. An insulating layer enclosing a resistive memory element and an insulating layer enclosing a conductive line connected with the resistive memory element have different stresses, hardness, porosity degrees, dielectric constant or heat conductivities. | 09-17-2009 |
20100072453 | Phase-Changeable Fuse Elements and Memory Devices Containing Phase-Changeable Fuse Elements and Memory Cells Therein - Non-volatile memory devices include an array of phase-changeable memory cells, which have first phase-changeable material patterns therein, and at least one phase-changeable fuse element. This phase-changeable fuse element includes a second phase-changeable material pattern therein with a higher crystallization temperature relative to the first phase-changeable material patterns in the array of phase-changeable memory cells. This higher crystallization temperature may be greater than about 300° C. According to additional embodiments of the present invention, the at least one phase-changeable fuse element includes a composite of the second phase-changeable material pattern and a third phase-changeable material pattern, which is formed of the same material at the first phase-changeable material patterns. | 03-25-2010 |
20100144090 | PHASE CHANGE MEMORY DEVICES HAVING DUAL LOWER ELECTRODES AND METHODS OF FABRICATING THE SAME - A semiconductor device includes a semiconductor substrate and a lower interlayer insulating layer disposed on the substrate. An opening passing through the lower interlayer insulating layer and exposing the substrate is included. A buried insulating pattern is disposed in the opening. First and second conductive layer patterns are sequentially stacked to surround the sidewall and bottom of the buried insulating pattern. A phase change material pattern is included, which is disposed on the lower interlayer insulating layer in contact with a top surface of the second conductive layer pattern, and spaced apart from the first conductive layer pattern. An upper interlayer insulating layer covering the lower interlayer insulating layer and the phase change material pattern is included. A conductive plug is included, which passes through the upper interlayer insulating layer and is electrically connected to the phase change material pattern. A method of fabricating the semiconductor device is also provided. | 06-10-2010 |
Sunheui Ryoo, Gyeonggi-Do KR
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20150215824 | METHOD AND APPARATUS FOR PERFORMING HANDOVER OF USER EQUIPMENT IN WIRELESS COMMUNICATION SYSTEM SUPPORTING DUAL CONNECTIVITY - A method of supporting a Handover (HO) by a master evolved Node B (eNB) in a wireless communication system supporting dual connectivity of a User Equipment (UE) for the master eNB and a slave eNB is provided. The method includes when an HO of the UE to the slave eNB is determined, transmitting an HO request message to a target slave eNB, when a HO Ack message is received from the target slave eNB, transmitting an HO trigger request message including identification information of the target slave eNB to a source slave eNB, and when a resource release message is received from the target slave eNB, transmitting an HO success indicator to the source slave eNB. | 07-30-2015 |
Sun Heui Ryoo, Gyeonggi-Do KR
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20150045035 | METHOD OF HANDLING RADIO LINK FAILURE IN WIRELESS COMMUNICATION SYSTEM BASED ON MULTI-ENB CONNECTIVITY AND APPARATUS THEREOF - Methods and apparatuses are provided for performing multi-eNB connectivity communication. An eNB receives a Radio Link Failure (RLF) expected message related to a first link, from a UE. A target cell is sought for a handover of the UE according to the RLF expected message. The target cell is selected, when the target cell is found. The eNB receives, from the UE, an RLF message related to the first link, through a second link. An instruction for the handover to the selected target cell is transmitted to the UE. | 02-12-2015 |