Megumi
Daisuke Megumi, Nagaokakyo-Shi JP
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20110020603 | CAPACITOR AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a capacitor which has a high capacitance and a low equivalent series resistance. The capacitor includes a conductive base material composed of a plating film having a specific surface area of 100 mm | 01-27-2011 |
20150072165 | BONDING MEMBER - A bonding member that includes a plating film containing a Cu—Ni alloy as its main constituent. In this plating film, the Cu mass ratio Cu/(Cu+Ni) is increased and decreased between 0.7 and 0.97 in the film thickness direction. In addition, the amplitude between the increase and decrease in the Cu mass ratio is larger than 0.1. Therefore, when the plating film containing the Cu—Ni alloy as its main constituent and Sn-based solder material or the like are joined by soldering, an intermetallic compound layer with a high melting point is formed. In addition, the plating film has a layer with a slow reaction rate, and thus can slow the reaction rate of alloying reaction between the Cu—Ni alloy and a Sn-based metal. | 03-12-2015 |
Tomohiro Megumi, Niihama-Shi JP
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20090101301 | PROCESS FOR PRODUCING PURIFIED SILICON - Provided is a process for producing a purified silicon by cutting off a crude silicon region, without determining the aluminium concentration in a directionally-solidified silicon. | 04-23-2009 |
20090208401 | PROCESS FOR PRODUCING BORON ADDED PURIFIED SILICON - Provided is a process for producing a boron added silicon (purified silicon) in an energy saving mode from a reduced silicon obtained by reducing a silicon halide with a metal aluminium. The production process of the invention comprises reducing a silicon halide with a metal aluminium to give a reduces silicon, heating and melting the resulting reduced silicon, and adding boron thereto followed by solidification for purification under the condition of a temperature gradient provided in one direction in a mold. Preferably, after washed with an acid, the reduced silicon is heated and molten, and boron is added thereto. After the reduced silicon is heated and molten under reduced pressure, boron is added thereto. After heated and molten, the reduced silicon is purified by solidification in one direction, then heated and molten, and thereafter boron is added thereto. | 08-20-2009 |
20100329958 | METHOD FOR PRODUCTION OF PURIFIED SILICON - A standard temperature gradient (T | 12-30-2010 |
Tomohiro Megumi, Imabari-Shi JP
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20110167961 | METHOD FOR PURIFYING MATERIAL CONTAINING METALLOID ELEMENT OR METAL ELEMENT AS MAIN COMPONENT - It is possible to efficiently obtain a purified material from a material containing a metalloid element such as silicon or metal element as the main component, and an impurity. The method for purifying a material, comprising bringing a material containing a metalloid element or metal element as the main component, and an impurity into contact with a compound represented by the following formula (1): | 07-14-2011 |
Tomohiro Megumi, Ehime JP
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20110233478 | SILICON FOR N-TYPE SOLAR CELLS AND A METHOD OF PRODUCING PHOSPHORUS-DOPED SILICON - It is an object of the present invention to provide aluminum-containing silicon for n-type solar cells. It further provides a method of producing phosphorous-doped silicon refined form aluminum-containing silicone from an economical point of view. It provides silicon for n-type solar cells containing aluminum at a mass concentration of from 0.001 to 1.0 ppm and phosphorous at a mass concentration of from 0.0011 to 1.1 ppm, and having a mass concentration ratio of phosphorous to aluminum of 1.1 or greater. It further provides a method of producing phosphorous-doped silicon, including: preparing a melted mixture containing aluminum, phosphorous, and silicon, by heating and melting aluminum-containing silicon to obtain a melted product and adding phosphorous to the obtained melted product, or by adding phosphorous to aluminum-containing silicon to obtain a mixture and heating and melting the obtained mixture; and then solidifying the melted mixture in a mold under a temperature gradient in one direction. | 09-29-2011 |