Patent application number | Description | Published |
20120153440 | EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE AND METHOD OF PRODUCING THE SAME - An epitaxial substrate for electronic devices, in which current flows in a lateral direction and of which warpage configuration is properly controlled, and a method of producing the same. The epitaxial substrate for electronic devices is produced by forming a bonded substrate by bonding a low-resistance Si single crystal substrate and a high-resistance Si single crystal substrate together; forming a buffer as an insulating layer on a surface of the bonded substrate on the high-resistance Si single crystal substrate side; and producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate. The resistivity of the low-resistance Si single crystal substrate is 100 Ω·cm or less, and the resistivity of the high-resistance Si single crystal substrate is 1000 Ω·cm or more. | 06-21-2012 |
20120168719 | EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE, IN WHICH CURRENT FLOWS IN LATERAL DIRECTION AND METHOD OF PRODUCING THE SAME - To provide an epitaxial substrate for electronic devices, in which current flows in a lateral direction, which enables accurate measurement of the sheet resistance of HEMTs without contact, and to provide a method of efficiently producing the epitaxial substrate for electronic devices, the method characteristically includes the steps of forming a barrier layer against impurity diffusion on one surface of a high-resistance Si-single crystal substrate, forming a buffer as an insulating layer on the other surface of the high-resistance Si-single crystal substrate, producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate, and measuring resistance of the main laminate of the epitaxial substrate without contact. | 07-05-2012 |
20130087807 | EPITAXIAL GROWTH SUBSTRATE, SEMICONDUCTOR DEVICE, AND EPITAXIAL GROWTH METHOD - In heteroepitaxially growing a group-III nitride semiconductor on a Si single crystal substrate, the occurrence of cracks initiating in the wafer edge portion can be suppressed. Region A is an outermost peripheral portion outside the principal surface, being a bevel portion tapered. Regions B and C are on the same plane (the principal surface), region B (mirror-surface portion) being the center portion of the principal surface, and region C a region in the principal surface edge portion surrounding region B. The principal surface has a plane orientation, and in region B, is mirror-surface-finished. Region B occupies most of the principal surface of this Si single crystal substrate, and a semiconductor device is manufactured therein. Region C (surface-roughened portion) has a plane orientation as with region B, however, region B is mirror-surface-finished, whereas region C is surface-roughened. | 04-11-2013 |
Patent application number | Description | Published |
20120202385 | CONNECTOR FOR MEDICAL INSTRUMENT - A connector for a medical instrument connected to an external device for medical use is provided, and the connector for a medical instrument includes a plug portion in which electric contact point portions are placed, outer sheath cases connectively provided at the plug portion, a sub frame member interposed between the plug portion and the outer sheath cases, and having a flange portion, and a main frame member housed in the outer sheath cases and fixed to the sub frame member, wherein the plug portion and the outer sheath cases are butted against the flange portion by different fixing members respectively, and are compressed and fixed to the sub frame member. | 08-09-2012 |
20130197310 | Intracorporeal insertion instrument - An intracorporeal insertion instrument includes an elongated two guide wires having a distal end portion whose cross-sectional shape is non-circular, wherein a bending habit is applied to the distal end portion, and a sheath main body provided with a plurality of lumens formed such that the guide wires are inserted from a plurality of proximal-end openings and the respective guide wires can be protruded from distal-end openings, the respective distal-end openings being formed such that the respective guide wires are prevented from rotating around axes of the guide wires in the distal end openings, and the distal end portions of the guide wires are separated from each other along protruding directions. | 08-01-2013 |
20140094656 | ENDOSCOPE - An insertion portion, an operation portion, a signal cable, a plate-shaped member, an electric board, and a fixing member are included. The fixing member is formed into a U-shape in which a bottom surface, a top surface, a side surface and a fitting port are formed, and has a stopper for a surplus portion that is fitted in an inside formed, a distance between the bottom surface and the top surface is set to be slightly larger than a diameter in the surplus portion, and the surplus portion is configured not to be disposed in layers in a height direction of the side surface when the surplus portion is housed between the bottom surface and the top surface of the fixing member. | 04-03-2014 |
20140200513 | ENDOSCOPE - A first housing region A which is provided in the operation portion and in which a bending drive mechanism is housed, a second housing region B which is provided in the operation section and in which a flexible member is housed, and a third housing region C which is provided in the operation portion and in which an electric part is housed are provided, the first housing region A and the second housing region B are located to be lined up in an orthogonal direction Q, and the third housing region C is located to be adjacent to both of the first housing region A and the second housing region B so that a first boundary line T | 07-17-2014 |
20140367159 | SUBSTRATE STRUCTURE - A substrate structure includes: a first substrate; a second substrate including a front face disposed so as to face a front face of the first substrate, a substrate spacing holding member provided between the front faces of the substrates facing each other, and holds a spacing between the two substrates at a predetermined value; a mounted component including a signal wire mounted on the second substrate, the signal wire, including an end portion electrically connected to the second substrate and extending from the substrate to an outside along the front face of the second substrate; a through hole provided in the first substrate, the through disposing a projecting part of the mounted component therein; and a shielding member being provided on a back face side of the first substrate and covering an entirety or at least a part of an opening of the through hole. | 12-18-2014 |
20150230693 | SUBSTRATE CONNECTING STRUCTURE - A substrate connecting structure includes a circuit substrate where an electrical component is installed on the back face, a signal cable into which a plurality of signal transmission lines electrically connected to first signal line connecting portions and to second signal line connecting portions, respectively, are inserted, and a coupling member that is formed by a conductive member including a fixing section disposed at the end portion of the signal cable, a flat section on the front face of the circuit substrate, and a through hole, the coupling member fixing the signal cable and the circuit substrate, wherein the central axis of the signal cable is displaced toward the back face side with respect to the central axis of the circuit substrate. | 08-20-2015 |
Patent application number | Description | Published |
20090075687 | Center Device - To provide a center device for accommodating a variety of situations which may occur when a home-use game machine, or the like, is used, in which a plurality of users use their own controller devices such as an input device. A center device communicates between a plurality of controller devices, receives an instructing operation carried out by the user of each controller device, and executes processing according to the instructing operation. The center device selects at least one of the controller devices as a controller device to be authenticated from among the plurality of controller devices by utilizing communication with each of the plurality of controller devices, and conducts authentication processing relative to each of the controller devices while communicating with each of the selected controller device. | 03-19-2009 |
20120026089 | Center Device - To provide a center device for accommodating a variety of situations which may occur when a home-use game machine, or the like, is used, in which a plurality of users use their own controller devices such as an input device. A center device communicates between a plurality of controller devices, receives an instructing operation carried out by the user of each controller device, and executes processing according to the instructing operation. The center device selects at least one of the controller devices as a controller device to be authenticated from among the plurality of controller devices by utilizing communication with each of the plurality of controller devices, and conducts authentication processing relative to each of the controller devices while communicating with each of the selected controller device. | 02-02-2012 |
20120264519 | Center Device - To provide a center device for accommodating a variety of situations which may occur when a home-use game machine, or the like, is used, in which a plurality of users use their own controller devices such as an input device. A center device communicates with a plurality of devices in either a wired or radio manner, receives an instruction operation from a user of each device, and carries out a process based on the instruction operation, the plurality of devices each having unique identifier, including: a unit that obtains an identifier of a device; a unit that provides information concerning the device, the identifier of the device is not associated with the identifier of the user; and a unit that associates the identifier of the device selected by the user, the identifier of the user is already associated with the identifier of another device, with the identifier of the user. | 10-18-2012 |
20130214932 | Center Device - A center device communicates with a plurality of controller devices each having a light emitter, receives an instruction operation from a user of each device, and carries out a process based on the instruction operation, where light emission control is carried out such that each light emitter of the plurality of the controller devices emits light of a different color. | 08-22-2013 |
20150379258 | Center Device - A center device communicates with one or more controller devices operated by one or more users. The center device is operable to: execute at least one application program; detect a respective connection with each of the one or more controller devices and to select one of the one or more controller devices for authentication; query the user of the selected one of the controller devices for requested authentication information; receive, from the selected one of the controller devices, authentication information provided by the user of the selected one of the controller devices; and permit the execution and manipulation of the output of the application program only when the authentication information provided by the user, and received from, the selected one of the controller devices matches the requested authentication information. | 12-31-2015 |
Patent application number | Description | Published |
20140049134 | INDUCTION ELECTRICAL ROTATING MACHINE - Induction electrical rotating machine includes a stator which has plural stator slots | 02-20-2014 |
20140111066 | ROTARY MACHINE AND DRIVE SYSTEM THEREFOR - A rotary machine includes two sets of three-phase stator winding wires and two sets of inverters connected to the same direct-current power supply. Alternating-current terminals of the inverters are respectively connected to the three-phase stator winding wires. Stator winding wires are housed in a plurality of slots to form a stator. The two sets of three-phase stator winding wires and the stator winding wires in the same phase of the sets are started to be wound from the slot positions, with phases thereof being different from each other by 180 degrees, among the plurality of slots and are finished being wound in the slot positions, with phases thereof different from each other by 180 degrees. Winding end points of the three-phase stator winding wires are respectively connected in common, and alternating-current voltages having the same magnitude and opposite phases are applied to the two sets of three-phase stator winding wire. | 04-24-2014 |
20140216047 | Two-Shaft Gas Turbine - A two-shaft gas turbine having high operability is provided. The two-shaft gas turbine includes: a gas generator having a compressor, a combustor and a high pressure turbine; a power turbine having a low pressure turbine; a load connected to the power turbine; a motor/generator capable of rotatably driving the gas generator and capable of extracting power from the gas generator; electric equipment controlling the rotational driving and the power extraction by delivering electric power between the electric equipment and the motor/generator; and a control device controlling the electric equipment, wherein the combustor has a plurality of combustion regions to which a fuel is supplied through fuel adjustment means which are independent from each other, and the control device controls a delivery amount of the electric power delivered by the electric equipment corresponding to the number of combustion regions to which the fuel is supplied. | 08-07-2014 |
20160041567 | Gas Turbine Generation System - A gas turbine generation system has a three-phase generator whose rotor is mechanically coupled to a gas turbine. The system comprises a three-phase voltage balancing circuit having elements independently operable for each phase to disperse or cancel unbalanced components of three-phase current, during unbalanced fault in a power grid connected to the generator, result in balancing of the three-phase voltage; and the voltage balancing constitutes a mechanism of avoiding the occurrence of the rotor vibration from mechanical resonance points on turbine blades. | 02-11-2016 |
Patent application number | Description | Published |
20120205669 | POWER SEMICONDUCTOR DEVICE - In a semiconductor device according to the present invention, a p-type well region disposed in an outer peripheral portion of the power semiconductor device is divided into two parts, that is, an inside and an outside, and a field oxide film having a greater film thickness than the gate insulating film is provided on a well region at the outside to an inside of an inner periphery of the well region. Therefore, it is possible to prevent, in the gate insulating film, a dielectric breakdown due to the voltage generated by the flow of the displacement current in switching. | 08-16-2012 |
20130020587 | POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device includes a semiconductor substrate of a first conductivity type, a drift layer of the first conductivity type which is formed on a first main surface of the semiconductor substrate, a second well region of a second conductivity type which is formed to surround a cell region of the drift layer, and a source pad for electrically connecting the second well regions and a source region of the cell region through a first well contact hole provided to penetrate a gate insulating film on the second well region, a second well contact hole provided to penetrate a field insulating film on the second well region and a source contact hole. | 01-24-2013 |
20130285140 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - A trench-gate type semiconductor device that can prevent breakdown of a gate insulating film caused by a displacement current flowing into a protective diffusion layer at a portion of a trench underlying a gate electrode at a turn-off time and simultaneously improves a current density by narrowing a cell pitch. The semiconductor device includes a gate electrode embedded into a trench penetrating a base region. The gate electrode is disposed into a lattice shape in a planar view, and a protective diffusion layer is formed in a drift layer at the portion underlying thereof. At least one of blocks divided by the gate electrode is a protective contact region on which the trench is entirely formed. A protective contact for connecting the protective diffusion layer at a bottom portion of the trench and a source electrode is disposed on the protective contact region. | 10-31-2013 |
20140061675 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - A silicon carbide semiconductor device that is able to increase the gate reliability, and to provide a method for manufacturing the silicon carbide semiconductor device, and that includes: a source electrode selectively formed on a source region; a gate insulating film formed so as to extend over the source region; and a gate electrode formed on the gate insulating film. The source region includes a first source region located below the source electrode, and a second source region surrounding the first source region. The doping concentration in a superficial layer of the second source region is lower than the doping concentration in a superficial layer of the first source region. The doping concentration in the second source region is higher in a deep portion than in a superficial portion thereof. | 03-06-2014 |
20140077232 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device capable of suppressing time variation of a threshold voltage and a method of manufacturing the same. A semiconductor device according to the present invention comprises a drift layer formed on a semiconductor substrate, first well regions formed in a surface layer of the drift layer, being apart from one another, a gate insulating film formed, extending on the drift layer and each of the first well regions, a gate electrode selectively formed on the gate insulating film, a source contact hole penetrating through the gate insulating film and reaching the inside of each of the first well regions, and a residual compressive stress layer formed on at least a side surface of the source contact hole, in which a compressive stress remains. | 03-20-2014 |
20140191251 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - It is expected that both reduction of the resistance of a source region and reduction of a leakage current in a gate oxide film be achieved in an MOSFET in a silicon carbide semiconductor device. A leakage current to occur in a gate oxide film of the MOSFET is suppressed by reducing roughness at an interface between a source region and the gate oxide film. If an impurity concentration is to become high at a surface portion of the source region, the gate oxide film is formed by dry oxidation or CVD process. If the gate oxide film is formed by wet oxidation, the impurity concentration at the surface portion of the source region is controlled at a low level. | 07-10-2014 |
20140299891 | SEMICONDUCTOR DEVICE - A semiconductor device that can improve reliability while suppressing increase of a conduction loss or a switching loss. In the semiconductor device, when a two-dimensional shape on a main surface of the semiconductor substrate is an unit cell, the shape being a repeating unit of a plurality of well regions periodically disposed in a surface layer of a drift layer, one unit cell and another unit cell adjacent in an x-axis direction are disposed misaligned in a y-axis direction, and one unit cell and another unit cell adjacent in the y-axis direction are disposed misaligned in the x-axis direction. | 10-09-2014 |
20150108564 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A source region of a MOSFET includes: a source contact region connected to a source pad; a source extension region adjacent to a channel region in a well region; and a source resistance control region arranged between the source extension region and the source contact region. The source resistance control region is different in an impurity concentration from the source extension region and the source contact region. These three regions are connected in series between the source pad and the channel region in the well region. | 04-23-2015 |
20150236012 | SEMICONDUCTOR DEVICE - In a semiconductor device having a built-in Schottky barrier diode as a reflux diode, a maximum unipolar current is increased in a reflux state and a leakage current is reduced in an OFF state. A Schottky electrode is provided in at least a part of a surface between adjacent well regions of a second conductivity type disposed on a surface layer side of a drift layer of a first conductivity type, and an impurity concentration of a first conductivity type in a first region provided in a lower part of the Schottky electrode and provided between the adjacent well regions is set to be higher than a first impurity concentration of a first conductivity type in the drift layer and to be lower than a second impurity concentration of a second conductivity type in the well region. | 08-20-2015 |
20150236119 | SILICON-CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A silicon-carbide semiconductor device that relaxes field intensity in a gate insulating film, and that has a low ON-resistance. The silicon-carbide semiconductor device includes: an n-type silicon-carbide substrate; a drift layer formed on a topside of the n-type silicon-carbide substrate; a trench formed in the drift layer and that includes therein a gate insulating film and a gate electrode; a p-type high-concentration well region formed parallel to the trench with a spacing therefrom and that has a depth larger than that of the trench; and a p-type body region formed to have a depth that gradually increases when nearing from a position upward from the bottom end of the trench by approximately the thickness of the gate insulating film at the bottom of the trench toward the lower end of the p-type high-concentration well region. | 08-20-2015 |
20160071922 | TRENCH-GATE TYPE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - There is provided a trench-gate type semiconductor device that can prevent breakdown of a gate insulating film caused by a displacement current flowing into a protective diffusion layer at a portion of a trench underlying a gate electrode at a turn-off time and simultaneously improves a current density by narrowing a cell pitch. The semiconductor device has a gate electrode | 03-10-2016 |
20160079411 | SEMICONDUCTOR DEVICE - A device that increases a value of current flowing through a whole chip until a p-n diode in a unit cell close to a termination operates and reduces a size of the chip and a cost of the chip resulting from the reduced size. The device includes a second well region located to sandwich the entirety of a plurality of first well regions therein in plan view, a third separation region located to penetrate the second well region from a surface layer of the second well region in a depth direction, and a second Schottky electrode provided on the third separation region. | 03-17-2016 |
Patent application number | Description | Published |
20150349611 | ROTARY ELECTRIC MACHINE - Insulators are respectively disposed such that longitudinal directions of trunk portions are oriented in a radial direction of teeth, and so as to place bottom surfaces of the trunk portions alongside two axial end surfaces of the teeth, concentrated winding coils are configured by winding conductor wires so as to be wound in multiple layers around the teeth so as to pass through a concave space that is formed by the trunk portions and first and second flange portions at two axial ends of the teeth, the second flange portion is disposed on an end surface of a core back of a stator core, and a temperature detecting element is installed by being inserted into an element insertion aperture that is formed on the second flange portion so as to be able to detect a temperature of a coil end of the concentrated winding coils. | 12-03-2015 |
20160065026 | ARMATURE FOR ROTARY ELECTRIC MACHINE - An armature winding is configured by mounting into an armature core a plurality of distributed-winding coils that are each produced by bending and shaping a conductor wire that is coated with insulation, coil ends are configured by arranging coil end portion rows that are formed by arranging coil end portions of the coils in a single row circumferentially in n layers in a radial direction, where n is an integer that is greater than or equal to 1, and an interphase insulating material includes: a strip-shaped insulating sheet material that is inserted inside the coil end portions, and that is disposed so as to extend circumferentially between the coil end portion rows; and an insulating buffering material that is formed on one surface of the insulating sheet material, and that is fixed to the coil end portion rows by forming air bubble groups internally. | 03-03-2016 |
20160065035 | ROTARY ELECTRIC MACHINE - A rotary electric machine is installed such that a central axis of a rotating shaft is horizontal, and coolant suction apertures are formed at positions on a cylindrical portion of a frame that are vertically above first and second coil ends, and strip-shaped insulating papers are inserted such that a thickness direction is in a radial direction between radially adjacent conductor portions of portions of the conductor wire that constitute the first and second coil ends, and are disposed so as to extend circumferentially across positions that are vertically below the coolant suction apertures inside the first and second coil ends. | 03-03-2016 |
Patent application number | Description | Published |
20110075693 | SEMICONDUCTOR LASER - The present invention provides a semiconductor laser realizing reduced possibility that a wiring layer disposed in the air is broken even under severe environment of a large temperature difference. A trench is provided between adjacent ridges, and a wiring layer electrically connecting an upper electrode and a pad electrode is disposed in the air at least above the trench. The wiring layer in a portion above the trench has a flat shape or a concave shape which dents toward the trench. With the configuration, accumulation of strains in the wiring layer when the wiring layer repeats expansion and shrink under severe environment of a large temperature difference is suppressed. | 03-31-2011 |
20110095401 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - In a method for manufacturing a semiconductor device, the method includes the step of growing a nitride-based III-V compound semiconductor layer, which forms a device structure, directly on a substrate without growing a buffer layer, the substrate being made of a material with a hexagonal crystal structure and having a principal surface that is oriented off at an angle of not less than −0.5° and not more than 0° from an R-plane with respect to a direction of a C-axis. | 04-28-2011 |
20130250992 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A semiconductor device comprising a substrate made of a material with a hexagonal crystal structure and having a substrate axis which is perpendicular to a principal surface of the substrate; and a nitride-based group III-V compound semiconductor layer grown directly on and in contact with the principal surface of the substrate without growing a buffer layer between the substrate and the nitride-based group III-V compound semiconductor layer, wherein, a direction of a growth axis of the semiconductor layer is substantially the same as a direction of the substrate axis of the substrate. | 09-26-2013 |
Patent application number | Description | Published |
20090052909 | OPTICAL COMMUNICATION MODULE AND OPTICAL SIGNAL TRANSMISSION METHOD - One or more one-dimensional array-shaped photoelectric conversion modules | 02-26-2009 |
20100232746 | OPTICAL CONNECTOR AND OPTICAL COUPLING STRUCTURE - To provide an optical connector which enables heat generated by an optical interface module arranged on the lower surface of the optical connector to be efficiently dissipated from the upper surface of the optical connector. The optical connector includes an optical transmission path | 09-16-2010 |
20100309635 | STRUCTURE FOR MOUNTING SEMICONDUCTOR PACKAGE - A mounting structure, in which semiconductor package | 12-09-2010 |
20130094853 | MULTIPLEXER/DEMULTIPLEXER AND MULTIPLEXING/DEMULTIPLEXING METHOD - In order to realize a multiplexer/demultiplexer in which utilization efficiency of a frequency is high, wavelength characteristics of a transmission band is flat, the cost is low, the size is small, and a wavelength and a band are variable, the multiplexer/demultiplexer includes: first light branching means for branching inputted light into plurality of pieces of light and outputting the branched pieces of light; a plurality of light wavelength separating means for separating and outputting light outputted from the first light branching means for each of predetermined frequency bands; and an optical coupling means for making outputs having frequency bands different from each other among outputs from the light wavelength separating means gather and be outputted. | 04-18-2013 |
20130188950 | WAVELENGTH PATH MULTIPLEXING/DEMULTIPLEXING APPARATUS AND WAVELENGTH PATH MULTIPLEXING/DEMULTIPLEXING METHOD - In order to connect a path and a transponder with low loss, reduce an apparatus cost, reduce an apparatus size, and improve a reliability of an apparatus, a wavelength path multiplexing/demultiplexing apparatus comprises multiplexing/demultiplexing unit having a multiplexing port through which a wavelength multiplexed light is inputted and outputted and a demultiplexing port in which the wavelength multiplexed light is demultiplexed into the lights included in the wavelength multiplexed light based on the wavelength and through which the light is inputted and outputted and first switch unit which have a first port to which the demultiplexing port is connected and a second port and connect the second port to one of the first ports; and the demultiplexing port is connected to the first port of each of the first switch unit and the first port is connected to the demultiplexing port of each of the multiplexing/demultiplexing unit. | 07-25-2013 |
20130294770 | MONITORING SYSTEM, MONITORING METHOD AND MONITORING PROGRAM - A monitoring system which enables monitoring of a transponder accommodated in an optical path in a transmission node and a node according to their operation conditions is provided. The monitoring system comprises a monitor control management unit connected to at least one of ports of wavelength selective switches which monitors an inspection signal or an operation signal, and a control unit which controls the wavelength selective switch so as to enable monitoring by the monitor control management unit. | 11-07-2013 |
20140133800 | OPTICAL SWITCH CONTROL METHOD, OPTICAL SWITCH CONTROL DEVICE, AND OPTICAL TRANSMISSION SYSTEM - An optical switch control device includes a driving control unit ( | 05-15-2014 |
Patent application number | Description | Published |
20090110079 | INFORMATION ENCODING APPARATUS AND METHOD, INFORMATION SEARCHING APPARATUS AND METHOD, INFORMATION SEARCHING SYSTEM AND METHOD, AND PROGRAM THEREFOR - An information searching system includes an encoding apparatus and a searching apparatus. The encoding apparatus inputs information to be stored, encodes the input information in layers, and then stores the resulting per-layer encoding information in a database. The searching apparatus acquires information that has been thus encoded in layers in order from the upper layers thereof, compares the encoded information for an acquired search query to the encoded information for potential matches on a per-layer basis, decodes the information for the potential matches that resemble the search query on the basis of the comparison results, and then outputs the decoded information for the potential matches that resemble the search query. In so doing, searches are conducted rapidly and with reduced computational load. | 04-30-2009 |
20090110318 | INFORMATION ENCODING APPARATUS AND METHOD, INFORMATION RETRIEVAL APPARATUS AND METHOD, INFORMATION RETRIEVAL SYSTEM AND METHOD, AND PROGRAM - An information retrieval apparatus includes an obtaining unit configured to obtain dynamic ranges or re-quantization codes of a target object to be retrieved and dynamic ranges or re-quantization codes of each of comparison objects to be compared with the target object, the dynamic ranges or re-quantization codes of the target object and the dynamic ranges or re-quantization codes of the comparison objects being obtained as a result of adaptive dynamic range coding; a distance computation unit configured to compute distances between the target object and the comparison objects using the obtained dynamic ranges or re-quantization codes of the target object and the obtained dynamic ranges or re-quantization codes of the comparison objects; and a comparison unit configured to compare the distances between the target object and the comparison objects to select one of the comparison objects having a minimum distance. | 04-30-2009 |
20090262001 | REMOTE CONTROL SYSTEM AND REMOTE CONTROL SIGNAL PROCESSING METHOD - A remote control system is provided. The remote control system includes at least one first remote control apparatus and at least one second remote control apparatus. The at least one first remote control apparatus includes a command input unit, a first control unit, and a first output unit. The at least one second remote control apparatus includes a first user interface unit, a first input unit, a second control unit, and a second output unit. | 10-22-2009 |
Patent application number | Description | Published |
20090127945 | AUTOMOTIVE ELECTRIC MOTOR-GENERATOR - The present invention provides an automotive electric motor-generator that can achieve sufficient cooling of a radiating plate by ensuring a sufficient cooling airflow ventilation channel within limited axial or radial dimensions. | 05-21-2009 |
20110180809 | SEMICONDUCTOR DEVICE MODULE - A P-side package unit and a N-side package unit are arranged on a main surface of a metal heatsink such that a main surface extends in a direction perpendicular to the main surface of the heatsink. Each of the P-side package unit and the N-side package unit is fixed by an end edge portion of a heatsink being clipped by a rail-shaped unit mounting part provided on the main surface of the heatsink. | 07-28-2011 |
20110187212 | AUTOMOTIVE ELECTRIC MOTOR-GENERATOR WITH RADIAL PLATES AND CIRCUIT BOARDS DISPOSED IN A FAN SHAPE IN A COMMON PLANE AROUND SHAFT OF ROTOR - The present invention provides an automotive electric motor-generator that can achieve sufficient cooling of a radiating plate by ensuring a sufficient cooling airflow ventilation channel within limited axial or radial dimensions. In the present invention, first and second radiating plates each form a fan shape, have N-channel power MOSFETs mounted thereto, and have a drain potential for the power MOSFETs. A first circuit board includes insert conductors that connect the power MOSFETs in series, and a second circuit board has insert conductors that are connected to source terminals of the power MOSFETs and that have negative potential. The first radiating plate, the second radiating plate, the first circuit board, and the second circuit board are disposed in a fan shape that is centered around a shaft so as to line up radially in a plane that is perpendicular to the shaft outside one axial end of a rear housing. | 08-04-2011 |
20150041827 | BONDING STRUCTURE INCLUDING METAL NANO PARTICLES AND BONDING METHOD USING METAL NANO PARTICLES - A bonding structure including metal nano particles includes a first member having a metal surface on at least one side, a second member having a metal surface on at least one side, the second member being disposed such that the metal surface of the second member faces the metal surface of the first member, and a bonding material bonding the first member and the second member by sinter-bonding the metal nano particles. At least one of the metal surfaces of the first member and the second member is formed to be a rough surface having a surface roughness within the range from 0.5 μm to 2.0 μm. | 02-12-2015 |
20150130076 | SEMICONDUCTOR MODULE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor module of the present invention includes: a semiconductor element having a first main surface and a second main surface facing the first main surface, the semiconductor element including a front surface electrode and a back surface electrode on the first main surface and the second main surface, respectively; a metal plate electrically connected to the back surface electrode of the semiconductor element through a sintered bonding material including metal nanoparticles; and a plate-shaped conductor electrically connected to the front surface electrode of the semiconductor element through the sintered bonding material including the metal nanoparticles. The metal plate and the conductor include grooves communicating between a bonding region bonded to the semiconductor element and the outside of the bonding region. | 05-14-2015 |
20150130085 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A manufacturing method of a semiconductor device according to the present invention includes the steps of (a) preparing an insulating or conductive substrate; (b) arranging a bonding material having sinterability in at least one bonding region of a principal surface of the substrate (i.e., insulating substrate); and (c) sintering the bonding material while a bonding surface to be subjected to bonding of at least one semiconductor element is brought into pressurized contact with the bonding material, and bonding the substrate (i.e., insulating substrate) and the semiconductor element together through the bonding material. The bonding region in the step (b) is inwardly positioned from the bonding surface (i.e., region) of the semiconductor element in plan view, and the bonding material is not protruded outwardly from the bonding surface of the semiconductor element in plan view even after the step (c). | 05-14-2015 |
Patent application number | Description | Published |
20100171406 | ELECTROCONDUCTIVE LAMINATE - To provide an electroconductive laminate which has a broad transmission/reflection band and which is excellent in electrical conductivity (electromagnetic wave shielding properties), visible light transmittance, visible light antireflection properties, near infrared shielding properties and moisture resistance, and an electromagnetic wave shield for a plasma display employing such a laminate. | 07-08-2010 |
20120250146 | LAMINATED GLASS - The present invention relates to a laminated glass including: a pair of glass substrates facing with each other; a composite film arranged between the pair of glass substrates and including a resin film and an infrared reflective film which includes a high refractive index layer and a low refractive index layer and is formed on a light-incident-side main surface of the resin film; and a pair of adhesive sheets arranged between the pair of glass substrates and the composite film to bond the pair of glass substrates and the composite film, in which the laminated glass has the specific configuration. | 10-04-2012 |
20120276374 | LAMINATED GLASS, AND METHOD FOR PRODUCING SAME - The present invention relates to a laminated glass including a first glass substrate, a first adhesive layer, a heat reflective film, a second adhesive layer and a second glass substrate, laminated in this order, in which the heat reflective film includes a resin film having specific thermal shrinkages in a direction that a thermal shrinkage becomes maximum and in a direction orthogonal to the direction, and a heat reflective coating formed on the resin film; the first adhesive layer and the second adhesive layer include a polyvinyl butyral film having thermal shrinkages in a direction that a thermal shrinkage becomes maximum and in a direction orthogonal to the direction; and the direction that a thermal shrinkage becomes maximum, of the resin film and the direction that a thermal shrinkage becomes maximum, of the polyvinyl butyral film are orthogonal to each other. | 11-01-2012 |