Patent application number | Description | Published |
20100139681 | HAIR COSMETIC COMPOSITION - A hair cosmetic composition containing the following components (A) and (B): (A) is/are one or more copolymers selected from the following components (A1) and (A2):
| 06-10-2010 |
20100233378 | POLYETHER POLYCARBONATE - The present invention provides polyether polycarbonate having a constituent unit represented by the formula (I), a method for producing the same, an adhesive composed of the same, an adhesive composition containing the same, an adhesive sheet having a layer of the adhesive composition, a method for producing an adhesive article by dissolving the polyether polycarbonate in a solvent selected from water and alcohols having 1 to 4 carbon atoms, coating the solution on an adherend, and volatilizing the solvent, and an alcohol solution containing the polyether polycarbonate. | 09-16-2010 |
20120039834 | HAIR COSMETIC COMPOSITION - A hair cosmetic composition containing a polyether polycarbonate having a structural unit represented by the following formula (1): [wherein A represents a C2 to C6 alkylene group; n represents an average number of 5 to 1,000; p represents an average number of 5 to 100; and (n×p) units of AO may be the same or not]. | 02-16-2012 |
Patent application number | Description | Published |
20090095513 | SOLDER LAYER, SUBSTRATE FOR DEVICE JOINING UTILIZING THE SAME AND METHOD OF MANUFACTURING THE SUBSTRATE - A solder layer, a substrate for device joining utilizing the same and a method of manufacturing the substrate are provided whereby the device joined remains thermally unaffected, an initial bonding strength in solder joint is enhanced and the device can be soldered reliably. The solder layer formed on a base substrate ( | 04-16-2009 |
20090098377 | Si-Doped GaAs Single Crystal Ingot and Process for Producing the Same, and Si-Doped GaAs Single Crystal Wafer Produced From Si-Doped GaAs Single Crystal Ingot - This invention provides an Si doped GaAs single crystal ingot, which has a low crystallinity value as measured in terms of etch pit density (EPD) per unit area and has good crystallinity, and a process for producing the same. An Si-doped GaAs single crystal wafer produced in a latter half part in the growth of the Si doped GaAs single crystal ingot is also provided. A GaAs compound material is synthesized in a separate synthesizing oven (a crucible). An Si dopant is inserted into the compound material to prepare a GaAs compound material with the Si dopant included therein. The position of insertion of the Si dopant is one where, when the GaAs compound material is melted, the temperature is below the average temperature. After a seed crystal is inserted into a crucible for an apparatus for single crystal growth, the GaAs compound material with the Si dopant included therein and a liquid sealing compound are introduced into the crucible. The crucible is set in the apparatus for single crystal growth, where the mixture is heat melted and, while stirring the liquid sealing compound, the melt is solidified by a vertical temperature gradient method and the crystal is grown to prepare an Si doped GaAs single crystal ingot. In this case, an Si doped GaAs single crystal wafer is also produced in the latter half part of the growth of the ingot. | 04-16-2009 |
20090151982 | METAL-CERAMIC COMPOSITE SUBSTRATE AND METHOD OF ITS MANUFACTURE - A metal-ceramic composite substrate having excellent heat dissipation and a method of manufacturing such a metal-ceramic composite substrate at low cost are disclosed. A metal-ceramic composite substrate ( | 06-18-2009 |
20090207580 | Submount and Method of Manufacturing the Same - A submount with an electrode layer having excellent wettability in soldering and method of manufacturing the same are disclosed. A submount ( | 08-20-2009 |
20100263849 | SOLDER LAYER, HEAT SINK USING SUCH A SOLDER LAYER AND METHOD FOR MANUFACTURING SUCH A HEAT SINK - A heat sink ( | 10-21-2010 |
20110059294 | Si-Doped GaAs single crystal ingot and process for producing the same, and Si-Doped GaAs single crystal wafer produced from Si-Doped GaAs single crystal ingot - This invention provides an Si doped GaAs single crystal ingot, which has a low crystallinity value as measured in terms of etch pit density (EPD) per unit area and has good crystallinity, and a process for producing the same. An Si-doped GaAs single crystal wafer produced in a latter half part in the growth of the Si doped GaAs single crystal ingot is also provided. A GaAs compound material is synthesized in a separate synthesizing oven (a crucible). An Si dopant is inserted into the compound material to prepare a GaAs compound material with the Si dopant included therein. The position of insertion of the Si dopant is one where, when the GaAs compound material is melted, the temperature is below the average temperature. After a seed crystal is inserted into a crucible for an apparatus for single crystal growth, the GaAs compound material with the Si dopant included therein and a liquid sealing compound are introduced into the crucible. The crucible is set in the apparatus for single crystal growth, where the mixture is heat melted and, while stirring the liquid sealing compound, the melt is solidified by a vertical temperature gradient method and the crystal is grown to prepare an Si doped GaAs single crystal ingot. In this case, an Si doped GaAs single crystal wafer is also produced in the latter half part of the growth of the ingot. | 03-10-2011 |
20120012373 | Submount and Method of Manufacturing the Same - A submount with an electrode layer having excellent wettability in soldering and method of manufacturing the same are disclosed. A submount ( | 01-19-2012 |