Patent application number | Description | Published |
20080225678 | FERROELECTRIC RECORDING MEDIUM AND WRITING METHOD FOR THE SAME - A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium. | 09-18-2008 |
20080247085 | FERROELECTRIC HARD DISK SYSTEM - A ferroelectric hard disk device is provided and includes: a ferroelectric media having a bottom electrode and a ferroelectric layer disposed on the bottom electrode; and a head formed above the ferroelectric media, the head being operative to write and reproduce information on the ferroelectric layer. | 10-09-2008 |
20090021862 | ELECTRIC FIELD READ/WRITE HEAD, METHOD OF MANUFACTURING THE SAME, AND INFORMATION STORAGE DEVICE COMPRISING THE ELECTRIC FIELD READ/WRITE HEAD - An electric field read/write head, a method of manufacturing the same, and an information storage device including the electric field read/write head are provided. The electric field read/write head includes: a resistance region formed in a substrate which comprises an end surface facing a recording medium; a source and a drain formed in the substrate and disposed on both sides of the resistance region, respectively; and an insulating layer and a write electrode formed sequentially on the resistance region, wherein the length (l) to width (w) ratio (l/w) of the resistance region satisfies (l/w)≧0.2. | 01-22-2009 |
20090034120 | ELECTRIC FIELD READ/WRITE HEAD, METHOD OF MANUFACTURING THE SAME, AND INFORMATION STORAGE DEVICE COMPRISING ELECTRIC FIELD READ/WRITE HEAD - An electric field read/write head, a method of manufacturing the electric field read/write head, and an information storage device including the electric field read/write head are provided. The electric field read/write head includes: a substrate having a first surface facing a recording medium and a second surface that is perpendicular to the first surface; and a protrusion formed on the second surface and having at least a portion facing the recording medium, wherein a resistance sensor comprising a source, a drain, and a channel is included in the protrusion. An insulating layer and electric field shield layers are further sequentially formed on opposite sides of the protrusion, respectively, and at least one of the electric field shield layers is a write electrode. | 02-05-2009 |
20090090936 | ELECTRIC FIELD READ/WRITE HEAD, METHOD OF MANUFACTURING THE SAME, AND INFORMATION STORAGE DEVICE COMPRISING ELECTRIC FIELD READ/WRITE HEAD - Provided is an electric field head including a resistance sensor to read information recorded on a recording medium. The resistance sensor includes a first semiconductor layer including a source and a drain, and a second semiconductor layer that is heterogeneously combined with the first semiconductor layer. Also, the electric field head further includes a channel between the source and the drain, in a junction region of the first and second semiconductor layers. | 04-09-2009 |
20090092033 | ELECTRIC FIELD SENSOR HAVING VERTICAL STRUCTURE, FABRICATION METHOD THEREOF, AND STORAGE UNIT USING THE SAME - An electric field sensor includes a substrate having a low resistive semiconductor layer doped with a high-density dopant as the top layer of the substrate, a high resistive semiconductor layer doped with a low-density dopant, the high resistive semiconductor layer located at a partial area on the low resistive semiconductor layer, and a conductive layer located on the high resistive semiconductor layer, wherein a change of an electric field is detected by a change of a current flowing through the low resistive semiconductor layer, the high resistive semiconductor layer, and the conductive layer. | 04-09-2009 |
20090161524 | READING/WRITING HEAD USING ELECTRIC FIELD, DATA READING/WRITING APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME - A data reading/writing head reading/writing data from/to a ferroelectric recording medium by using an electric field effect, includes a semiconductor body having a first plane on which an air bearing pattern is formed and a second plane crossing the first plane. A sensing unit is located on the second plane and reads data written to the ferroelectric recording medium, wherein the second plane is separated from the first plane, and a floating gate is disposed on the sensing unit, wherein an end of the floating gate extends to the first plane to guide an electric field from the ferroelectric recording medium to the sensing unit. | 06-25-2009 |
20090285082 | ELECTRIC FIELD READ/WRITE HEAD, METHOD OF MANUFACTURING THE ELECTRIC FIELD READ/WRITE HEAD, AND INFORMATION STORAGE DEVICE INCLUDING THE ELECTRIC FIELD READ/WRITE HEAD - An electric field head includes a body portion and a read head having a channel layer provided on an air bearing surface (ABS) of the body portion facing a recording medium and a source and a drain contacting both ends of the channel layer. The electric field head is manufactured by defining a head forming portion of a substrate, separating the head forming portion from the substrate, forming an ABS pattern on a side surface of the separated head forming portion, and forming a channel layer for a read head on a surface of the head forming portion where the ABS pattern is formed. An information storage device includes a ferroelectric recording medium and the electric field head. | 11-19-2009 |
20120224028 | METHOD OF FABRICATING MICROLENS, AND DEPTH SENSOR INCLUDING MICROLENS - A method of fabricating a microlens includes forming layer of photoresist on a substrate, patterning the layer of photoresist, and then reflowing the photoresist pattern. The layer of photoresist is formed by coating the substrate with liquid photoresist whose viscosity is 150 to 250 cp. A depth sensor includes a substrate and photoelectric conversion elements at an upper portion of the substrate, a metal wiring section disposed on the substrate, an array of the microlenses for focusing incident light as beams onto the photoelectric conversion elements and which beams avoid the wirings of the metal wiring section. The depths sensor also includes a layer presenting a flat upper surface on which the microlenses are formed. The layer may be a dedicated planarization layer or an IR filter, interposed between the microlenses and the metal wiring section. | 09-06-2012 |
20120281206 | UNIT PIXELS, DEPTH SENSORS AND THREE-DIMENSIONAL IMAGE SENSORS INCLUDING THE SAME - A unit pixel of a depth sensor includes a light-receiver configured to perform photoelectric conversion of an incident light to output an electrical signal and at least two sensors adjacent to the light-receiver to receive the electrical signal from the light-receiver such that a line connecting the sensors forms an angle greater than zero degrees with respect to a first line, the first line passing through a center of the light-receiver in a horizontal direction. | 11-08-2012 |
20120294137 | FERROELECTRIC READ HEAD - An apparatus can include a read head formed in a semiconductor layer of an air bearing surface, the read head comprising a channel region formed between a source and drain which are doped to a higher conductivity than the channel region; wherein the channel region is configured to generate a charge carrier depletion region in response to a first ferroelectric dipole direction, and to accumulate charge carriers in response to a second ferroelectric dipole direction. | 11-22-2012 |
20130010072 | SENSOR, DATA PROCESSING SYSTEM, AND OPERATING METHOD - An image sensor includes a unit pixel including a plurality of color pixels with a depth pixel. A first signal line group of first signal lines is used to supply first control signals that control operation of the plurality of color pixels, and a separate second signal line group of second signal lines is used to supply second control signals that control operation of the depth pixel. | 01-10-2013 |
20140092287 | IMAGE SENSOR, METHOD OF OPERATING THE SAME, AND IMAGE PROCESSING SYSTEM INCLUDING THE SAME - The image sensor includes a pixel array including a plurality of unit pixels each including a single transistor and a photodiode connected to a body of the single transistor, a row driver block configured to enable one of a plurality of rows in the pixel array to enter a readout mode, and a readout block configured to sense and amplify a pixel signal output from each of a plurality of unit pixels included in the row that has entered the readout mode. | 04-03-2014 |
20140103191 | SENSING METHODS FOR IMAGE SENSORS - A sensing method for an image sensor includes: connecting a first column line with a second column line in response to switch signals; and sensing a first pixel signal generated based on a first signal output from a first pixel and a second signal output from a second pixel, the first pixel and the second pixel being connected to the first column line and the second pixel being connected to the second column line. | 04-17-2014 |
20140103192 | BINARY CMOS IMAGE SENSORS, METHODS OF OPERATING SAME, AND IMAGE PROCESSING SYSTEMS INCLUDING SAME - A binary complementary metal-oxide-semiconductor (CMOS) image sensor includes a pixel array and a readout circuit. The pixel array includes at least one pixel having a plurality of sub-pixels. The readout circuit is configured to quantize a pixel signal output from the pixel using a reference signal. The pixel signal corresponds to sub-pixel signals output from sub-pixels, from among the plurality of sub-pixels, activated in response to incident light. | 04-17-2014 |
20140103413 | CMOS IMAGE SENSORS WITH PHOTOGATE STRUCTURES AND SENSING TRANSISTORS, OPERATION METHODS THEREOF, AND IMAGE PROCESSING SYSTEMS INCLUDING THE SAME - ACMOS image sensor includes a pixel array having a plurality of pixels. Each of the plurality of pixels includes: a photogate structure configured to be controlled based on a first gate voltage; and a sensing transistor including a charge pocket region formed in a substrate region, the sensing transistor being configured to be controlled based on a second gate voltage. Based on the first gate voltage, the photogate structure is configured to integrate charges generated in response to light incident on the substrate region. The sensing transistor is configured to adjust at least one of a threshold voltage of the sensing transistor and a current flow in the sensing transistor according to charges transferred from the photogate structure to the charge pocket region based on a difference between the first gate voltage and the second gate voltage. | 04-17-2014 |
20140104472 | IMAGE SENSORS, IMAGE PROCESSING SYSTEMS INCLUDING SAME, AND METHODS OF OPERATING THE SAME - A method of operating an image sensor includes: generating a pixel signal according to intensity of incident light; and generating a digital pixel signal based on a comparison between the pixel signal and at least one reference current. Accordingly, a current output from a 1T pixel in the image sensor is sensed such that the influence of noise is reduced and a pixel signal is sensed more precisely. | 04-17-2014 |
20140104942 | RECESS GATE TRANSISTORS AND DEVICES INCLUDING THE SAME - A recess gate transistor includes: a drain region and a source region in a semiconductor substrate and doped with first-type impurities; a recess region recessed in the semiconductor substrate between the drain region and the source region; a gate insulation layer on the recess region, a gate electrode on the gate insulation layer filling the recess region; and a charge pocket region below the recess region and doped with second-type impurities. A semiconductor chip includes a plurality of recess gate transistors, and an image sensor includes a semiconductor chip including a plurality of recess gate transistors. | 04-17-2014 |
20140268165 | OPTICAL BIOSENSOR AND METHOD OF OPERATING THE SAME - An optical biosensor may include a biosensing unit, detection unit, and signal processing unit. The biosensing unit may be configured for receiving first and second optical signals (which are generated from a phase-modulated optical signal), outputting a sensing signal by transmitting the first optical signal via a first optical path that includes a sensing resonator, and outputting a reference signal by transmitting the second optical signal via a second optical path that includes a reference resonator. The detection unit may be configured for receiving the sensing signal and the reference signal, detecting a phase element of each of the sensing signal and the reference signal through a signal demodulation operation, and detecting a phase difference between the sensing signal and the reference signal according to the detected phase elements. The signal processing unit may be configured for calculating the concentration of a bio-material based on the detected phase difference. | 09-18-2014 |
20150069244 | UNIT PIXELS, DEPTH SENSORS AND THREE-DIMENSIONAL IMAGE SENSORS INCLUDING THE SAME - A unit pixel of a depth sensor includes a light-receiver configured to perform photoelectric conversion of an incident light to output an electrical signal and at least two sensors adjacent to the light-receiver to receive the electrical signal from the light-receiver such that a line connecting the sensors forms an angle greater than zero degrees with respect to a first line, the first line passing through a center of the light-receiver in a horizontal direction. | 03-12-2015 |