Shu-Han
Shu-Han Chen, Chang Hua Hsien TW
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20090089946 | BATH UTILITY - A bath utility includes a frame and several bath balls. The frame has a configuration of a wider top end and a narrower bottom end. The bath balls are respectively bound on the frame by means of several binding members. The adjacent bath balls are leant on each other to hide the frame in the bath balls. Accordingly, the bath utility has a specific pattern. | 04-09-2009 |
Shu-Han Chen, Pei Tou TW
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20110191973 | BATH BRUSH AND MANUFACTURING METHOD THEREOF - The present invention provides a bath brush, which includes a handle and at least two ball-shaped elastic bath mesh materials. The handle is formed with at least two installation holes arranged along a length of the handle. Each of the bath mesh materials has two spongy semispherical bodies and a pass-through section connected the two semispherical bodies. The pass-through section of each of the bath mesh materials is directly positioned in one of the installation holes of the handle with the two semispherical bodies respectively positioned on a front face and a rear face of the handle. The elastic bath mesh materials are directly secured to the handle of themselves without using any fixing member. Therefore, the production rate of the bath brush can be increased and the manufacturing cost of the bath brush can be lowered without wasting resource. | 08-11-2011 |
Shu-Han Chen, Taipei TW
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20130266739 | PROCESS FOR FORMING CARBON FILM OR INORGANIC MATERIAL FILM ON SUBSTRATE BY PHYSICAL VAPOR DEPOSITION - The present invention discloses a process for forming a carbon film or an inorganic material film on a substrate by physical vapor deposition (PVD). Through the process, a high-quality, wafer scale thin film, such as a graphene film, is directly formed on a substrate without using an additional transfer step. | 10-10-2013 |
Shu-Han Chen, Hsin-Chu TW
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20140246695 | ISOLATION STRUCTURE OF SEMICONDUCTOR DEVICE - The invention relates to an isolation structure of a semiconductor device. An exemplary isolation structure for a semiconductor device comprises a substrate comprising a trench; a strained material in the trench, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; an oxide layer of the strained material over the strained material; a high-k dielectric layer over the oxide layer; and a dielectric layer over the high-k dielectric layer filling the trench. | 09-04-2014 |
20160086840 | Isolation Structure of Semiconductor Device - The invention relates to an isolation structure of a semiconductor device and a method of forming. An exemplary isolation structure for a semiconductor device comprises a substrate comprising a trench; a strained material in the trench, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; an oxide layer of the strained material over the strained material; a high-k dielectric layer over the oxide layer; and a dielectric layer over the high-k dielectric layer filling the trench. | 03-24-2016 |
Shu-Han Hsu, Hsinchu TW
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20140131768 | BRIDGE STRUCTURE - A bridge structure for use in a semiconductor device includes a semiconductor substrate and a semiconductor structure layer. The semiconductor structure layer is formed on a surface of the semiconductor substrate and a lattice difference is formed between the semiconductor structure layer and the semiconductor substrate. The semiconductor structure layer includes at least a first block, at least a second block and at least a third block, wherein the first block and the third block are bonded on the surface of the semiconductor substrate, the second block is floated over the semiconductor substrate and connected with the first block and the third block. | 05-15-2014 |
20140374834 | GERMANIUM STRUCTURE, GERMANIUM FIN FIELD EFFECT TRANSISTOR STRUCTURE AND GERMANIUM COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TRANSISTOR STRUCTURE - A germanium (Ge) structure includes a substrate, a Ge layer and at least a Ge spatial structure. The Ge layer is formed on the substrate, and a surface of the Ge layer is a Ge {110} lattice plane. The Ge spatial structure is formed in the Ge layer and includes a top surface and a sidewall surface, wherein the top surface is a Ge {110} lattice plane and the sidewall surface is perpendicular to the top surface. An axis is formed at a junction of the sidewall surface and the top surface, and an extensive direction of the axis is parallel to a Ge [112] lattice vector on the surface of the Ge layer, therefore the sidewall surface is a Ge {111} lattice plane. Because Ge {111} surface channels have very high electron mobility, this Ge spatial structure may be applied for fabricating high-performance Ge semiconductor devices. | 12-25-2014 |
Shu-Han Lee, Shin-Chuang TW
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20090107407 | Water-feeding device for domestic animals - A water-feeding device of the present invention includes a main body, a vertically weighted lever, a steel ball, a moving lever and a valve. The main body is a segment of a thin stainless steel metal cylinder as material. An upper half of the cylinder is narrowed to a cylinder with a smaller diameter, and the upper end of the cylinder is opened with a narrowed opening. A male thread is provided on the sidewall of the cylinder with the narrowed diameter. The vertically weighted lever, steel ball, moving lever and valve are inserted from the bottom to top such that the valve is affixed at an edge between the cylinder with the narrowed diameter and the cylinder with a bigger diameter on the lower portion thereof. The cylinder with the bigger diameter is narrowed into a small opening at lower end and formed with a sidewall of a hexagon. | 04-30-2009 |
Shu-Han Liao, New Taipei City TW
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20160112180 | WIRELESS DEVICE FOR FULL DUPLEX RADIOS - A wireless device for full duplex radios (FDR) is provided. The wireless device includes an FDR transceiver and an antenna module. The antenna module has a plurality of antennas. Specific distances are designed among the antennas so as to cancel the self-interference to the received signal of the FDR transceiver from the transmitted signal of the FDR transceiver. | 04-21-2016 |
Shu-Han Wang, New Taipei City TW
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20160132776 | ELECTRONIC DEVICES AND SERVICE MANAGEMENT METHODS THEREOF - Service management methods for use in an electronic device are provided, including the steps of: providing a record including at least one first event and possible probability parameters corresponding thereto, each having a weight; collecting device status information regarding information of current status of the electronic device, user operation behavior information and event triggering information using a data collector; evaluating a first evaluation value according to the device status information regarding information of current status of the electronic device, user operation behavior information and event triggering information, the possible probability parameters and respective weights of the record; and inferring that the first event reoccurs and performing a service corresponding to the first event when the first evaluation value has exceeded a threshold value. | 05-12-2016 |
Shu-Han Yu, Miao-Li County TW
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20140063410 | LIQUID CRYSTAL DISPLAY PANEL AND LIQUID CRYSTAL DISPLAY APPARATUS - A liquid crystal display (LCD) panel includes a first substrate, a second substrate, and a liquid crystal layer. The first substrate includes a first alignment layer. The second substrate is disposed opposite to the first substrate, and includes a second alignment layer. The liquid crystal layer is disposed between the first and second substrates, and the first alignment layer and the second alignment layer contact the liquid crystal layer. The first alignment layer and the second alignment layer are defined as first-type alignment layers, and either the first substrate or the second substrates has a second-type alignment layer. | 03-06-2014 |
Shu-Han Yu, Taipei City TW
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20140294370 | Image Blurring Avoiding Method and Image Processing Chip Thereof - An image blurring avoiding method for a camera includes obtaining a motion data of the camera; and capturing a picture only when the camera is substantially motionless according to the motion data. | 10-02-2014 |