Patent application number | Description | Published |
20090088594 | BISMUTH MOLYBDATE-BASED CATALYSTS, METHOD OF PREPARING THEREOF AND METHOD OF PREPARING 1,3-BUTADIENE USING THEREOF - This invention relates to a bismuth molybdate catalyst, a preparation method thereof, and a method of preparing 1,3-butadiene using the same, and to a bismuth molybdate catalyst, a preparation method thereof, and a method of preparing 1,3-butadiene using the same, in which 1,3-butadiene can be prepared through oxidative dehydrogenation directly using a C4 mixture including n-butene and n-butane as a reactant in the presence of a mixed-phase bismuth molybdate catalyst including α-bismuth molybdate (Bi2Mo3On) and γ-bismuth molybdate (Bi2MoO6). According to this invention, the C4 raffinate, containing many impurities, is used as a reactant, without an additional n-butane separation process, thus obtaining 1,3-butadiene at high yield. Unlike complicated multicomponent-based metal oxides, the catalyst of the invention has simple constituents and synthesis routes, and can be easily formed through physical mixing, and thus is very advantageous in assuring reproducibility and can be directly applied to commercial processes. | 04-02-2009 |
20100121123 | ZINC FERRITE CATALYSTS, METHOD OF PREPARING THEREOF AND METHOD OF PREPARING 1,3-BUTADIENE USING THEREOF - The present invention relates to a zinc ferrite catalyst, a method of producing the same, and a method of preparing 1,3-butadiene using the same. Specifically, the present invention relates to a zinc ferrite catalyst which is produced in a pH-adjusted solution using a coprecipitation method, a method of producing the same, and a method of preparing 1,3-butadiene using the same, in which the 1,3-butadiene can be prepared directly using a C4 mixture including n-butene and n-butane through an oxidative dehydrogenation reaction. The present invention is advantageous in that 1,3-butadiene can be obtained at a high yield directly using a C4 fraction without performing an additional process for separating n-butene, as a reactant, from a C4 fraction containing impurities. | 05-13-2010 |
20100249482 | METHOD OF PREPARING MULTICOMPONENT BISMUTH MOLYBDATE CATALYSTS COMPRISING FOUR METAL COMPONENTS AND METHOD OF PREPARING 1,3-BUTADIENE USING SAID CATALYSTS - This invention relates to a method of preparing multicomponent bismuth molybdate catalysts composed of four metal components and a method of preparing 1,3-butadiene using the catalyst, and particularly, to multicomponent bismuth molybdate catalysts composed of a divalent cationic metal, a trivalent cationic metal, bismuth and molybdenum, a preparation method thereof, and a method of preparing 1,3-butadiene from a C4 mixture including n-butene and n-butane using oxidative dehydrogenation. According to this invention, it is possible to prepare catalysts having high activity for the preparation process of 1,3-butadiene only using four metal components as shown through systematic investigation of types and ratios of metal components, unlike conventional multicomponent metal oxide catalysts having a complicated composition of metal components. | 09-30-2010 |
20110004041 | METHOD OF PRODUCING 1,3-BUTADIENE FROM N-BUTENE USING CONTINUOUS-FLOW DUAL-BED REACTOR - A method of producing 1,3-butadiene by the oxidative dehydrogenation of n-butene using a continuous-flow dual-bed reactor designed such that two kinds of catalysts charged in a fixed-bed reactor are not physically mixed. More particularly, a method of producing 1,3-butadiene by the oxidative dehydrogenation of n-butene using a C4 mixture including n-butene and n-butane as reactants and using a continuous-flow dual-bed reactor in which a multi-component bismuth molybdate catalyst and a zinc ferrite catalyst having different reaction activity in the oxidative dehydrogenation reaction of n-butene isomers (1-butene, trans-2-butene, cis-2-butene). | 01-06-2011 |
20110236564 | PREPARATION METHOD OF METAL OXIDE DOPED MONOLITH CARBON AEROGEL FOR CAPACITANCE CAPACITOR - Provided is a preparation method of a metal oxide doped monolith carbon aerogel for a high capacitance capacitor, the including: preparing a monolith carbon aerogel by performing a thermal decomposition of a moist gel dried in condition of a atmospheric pressure and a room temperature in a nitrogen atmosphere; impregnating the monolith carbon aerogel into alcohol where a metal precursor is dissolved; and calcinating the monolith carbon aerogel where the metal precursor is impregnated in an atmospheric atmosphere. By impregnating the metal oxide into the monolith carbon aerogel, a limit of capacitance may be enhanced using a pseudo capacitance effect by an interfacial oxidation reduction reaction. | 09-29-2011 |
Patent application number | Description | Published |
20130135823 | SEMICONDUCTOR PACKAGES USABLE WITH A MOBILE DEVICE - A semiconductor package usable with a mobile device includes a circuit board including conductive wirings therein and contact terminals on a rear surface thereof, an integrated circuit chip positioned on a front surface of the circuit board and electrically connected to the conductive wirings, a cover including at least an opening, and to cover the integrated circuit chip such that a flow space is provided around the integrated circuit chip and the opening communicates with the flow space, and an air flow generator positioned on the cover to generate a compulsory air flow through the flow space and the opening, thereby dissipating heat out of the semiconductor package from the integrated circuit chip by the compulsory air flow. | 05-30-2013 |
20130155653 | DISPLAY DEVICES, AND DISPLAY AND ELECTRONIC SYSTEMS INCLUDING THE DISPLAY DEVICES - A display device may include a chassis, a flexible printed circuit board on the chassis, a semiconductor device on the flexible printed circuit board, and a supporting element on the flexible printed circuit board. The semiconductor device may be spaced apart from the supporting element. The supporting element may be configured to maintain contact between the chassis and the flexible printed circuit board. | 06-20-2013 |
20130208426 | SEMICONDUCTOR PACKAGE HAVING HEAT SPREADER AND METHOD OF FORMING THE SAME - A semiconductor chip and a first heat dissipation pattern are mounted on a substrate. The first heat dissipation pattern has an opening therein and exposes the semiconductor chip therethrough. A second heat dissipation pattern including a thermal interface material (TIM) is interposed between a side surface of the semiconductor chip and the first heat dissipation pattern. | 08-15-2013 |
20130256916 | SEMICONDUCTOR PACKAGES AND METHODS OF MANUFACTURING SEMICONDUCTOR PACKAGES - A semiconductor package including a mounting substrate, a first semiconductor chip mounted on an upper surface of the mounting substrate, a unit package stacked on the first semiconductor chip may be provided. The unit package includes a package substrate and a second semiconductor chip mounted on the package substrate. A plurality of bonding wires connects bonding pads of the mounting substrate and connection pads of the unit package, thereby electrically connecting the first and second semiconductor chips to each other. A molding member is provided on the mounting substrate to cover the first semiconductor chip and the unit package. | 10-03-2013 |
20140167245 | SEMICONDUCTOR PACKAGE AND DISPLAY APPARATUS USING THE SAME - A semiconductor package includes a flexible base film having a first surface opposing a second surface, a semiconductor chip mounted on the first surface of the base film, and a touch sensing structure including at least one conductive pattern adjacent to the semiconductor chip. The at least one conductive pattern is disposed through the base film and has a surface exposed at the second surface of the base film. A contact condition of the semiconductor package is determined based on detection of a conductive path between the at least one conductive pattern and a conductive frame or support surface of the semiconductor package. The contact condition provides an indication of heat dissipation that may be expected to occur for the chip during operation. | 06-19-2014 |
20140239300 | SEMICONDUCTOR TEST DEVICE AND METHOD FOR FABRICATING THE SAME - Semiconductor test devices and methods for fabricating the same may be provided. The semiconductor test device may include a first thermal test flip chip cell including a first heater and a first sensor, and a test substrate formed under the first thermal test flip chip cell. The first thermal test flip chip cell may include a plurality of first bumps arranged on a bottom surface of the first thermal test flip chip cell and be configured to be electrically connected to the first heater and the first sensor. The test substrate may include a first ball array arranged on a bottom surface of the test substrate in a first direction and be configured to be electrically connected to the plurality of first bumps, which are electrically connected to the first heater and the first sensor. | 08-28-2014 |
20140264339 | HEAT SLUG HAVING THERMOELECTRIC ELEMENTS AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME - In a heat slug and a semiconductor package including the same, the heat slug includes a thermal conductive body having an active face and a dissipating face opposite to the active face, a dielectric layer covering the active face of the body, at least one thermoelectric element arranged on the dielectric layer and a conductive pattern arranged on the dielectric layer and electrically connected to the thermoelectric element. The electrical characteristics of the thermoelectric element are interacted with heat generated from a heat source. | 09-18-2014 |
20140339692 | SEMICONDUCTOR PACKAGE STACK HAVING A HEAT SLUG - A semiconductor package stack, comprising: a lower semiconductor package including a lower semiconductor chip mounted on a lower package board; an upper semiconductor package stacked on the lower semiconductor package and including an upper semiconductor chip mounted on an upper package board, wherein the upper package board includes an opening configured to expose a lower surface of the upper semiconductor chip; and a first heat slug disposed within the opening, contacting the lower surface of the upper semiconductor chip, and contacting an upper surface of the lower semiconductor chip. | 11-20-2014 |
20150054148 | SEMICONDUCTOR PACKAGES INCLUDING HEAT EXHAUST PART - According to example embodiments, a semiconductor package includes a lower package, upper packages on the lower package and laterally spaced apart from each other, a lower heat exhaust part between the lower package and the upper packages, an intermediate heat exhaust part between the upper packages and connected to the lower heat exhaust part, and an upper heat exhaust part on the upper packages and connected to the intermediate heat exhaust part. | 02-26-2015 |
20150062824 | SEMICONDUCTOR DEVICE HAVING THERMOELECTRIC MODULE - A heat spreader is formed on a first semiconductor package and a second semiconductor package adjacent to the first semiconductor package, and first and second thermoelectric modules are included between the first and second semiconductor packages and the heat spreader. The first and second thermoelectric modules are formed to have opposite polarities, and the heat spreader heated by the first thermoelectric module is cooled due to activation of the second thermoelectric module. | 03-05-2015 |