Patent application number | Description | Published |
20090087691 | Electric Power Generation Device - An electric power generation device includes a cell body and a secondary electric power generator. The cell body has an electrolyte, a fuel electrode and an air electrode. The secondary electric power generator is joined to at least one of the fuel and air electrodes and includes P- and N-type thermoelectric conversion members. With the electric power generation device, the cell body generates electric power at temperatures higher than or equal to an power generation start temperature, and at the same time, the P- and N-type thermoelectric conversion members joined to the cell body and functioning as a thermocouple produce electric power by utilizing the Seebeck effect. | 04-02-2009 |
20090135425 | HYDROGEN GAS DETECTION DEVICE - In a hydrogen gas detection device, light emitted from a light source is irradiated onto a hydrogen sensor whose reflectance (optical reflectance) varies upon contact with hydrogen gas, and the light transmitted through the hydrogen sensor or reflected by a reflective film of the hydrogen sensor is received by an optical sensor. On the basis of the signal output from the optical sensor and indicative of the amount of light received, the hydrogen gas detection device detects leakage of hydrogen gas. | 05-28-2009 |
20090202881 | SINGLE-CHAMBER-TYPE SOLID OXIDE FUEL CELL DEVICE - A solid-oxide fuel cell having a fuel pole and an air pole joined to a solid oxide electrolyte is arranged in a combustion exhaust gas flow channel of an engine or the like (fuel cell containing section), thereby placed in a flow of high-temperature combustion exhaust gas introduced through an exhaust gas introduction section into the fuel cell containing section and discharged through an exhaust gas discharge section, so that the solid-oxide fuel cell is heated by the thermal energy of the combustion exhaust gas and generates electric power using a hydrocarbon compound and carbon oxide in the combustion exhaust gas, as fuel gas. | 08-13-2009 |
20100054999 | HYDROGEN SENSOR AND HYDROGEN GAS DETECTING APPARATUS - A hydrogen sensor includes a thin film layer formed on a top surface of a planar optical transmission medium, and a catalyst layer formed on a top surface of the thin film layer. A first interface is created between the planar optical transmission medium and the thin film layer. A substrate is joined to a bottom surface of the planar optical transmission medium so that a second interface is created between the planar optical transmission medium and the substrate. On entering a first end portion of the planer optical transmission medium, light from a light source is spread by an entrance section, and the spread light is transmitted inside the planar optical transmission medium to a second end portion by being reflected by the first and second interfaces alternately. Light exiting from the second end portion is transmitted to an optical sensor by an exit light-collecting section. If the thin film layer is hydrogenated by the catalyst layer contacted by hydrogen, the amount of light reflected from the first interface reduces. Hydrogen gas is detected by the optical sensor detecting such reduction in the amount of light. | 03-04-2010 |
20100055876 | Laser processing method and laser processing apparatus - A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed. | 03-04-2010 |
20100176100 | LASER PROCESSING METHOD AND LASER PROCESSING APPARATUS - A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed. | 07-15-2010 |
20100203678 | SEMICONDUCTOR SUBSTRATE CUTTING METHOD - A semiconductor substrate cutting method which can efficiently cut a semiconductor substrate having a front face formed with a functional device together with a die bonding resin layer is provided. | 08-12-2010 |
20100203707 | SUBSTRATE DIVIDING METHOD - A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate | 08-12-2010 |
20100290050 | Hydrogen Sensor - A hydrogen sensor includes a thin film layer formed over a substrate of resin or the like, and a catalyst layer formed on a surface of the thin film layer. When contacted by leaked hydrogen gas, the catalyst layer quickly hydrogenates the thin film layer through its catalytic action, thereby causing a change in optical reflectance of the thin film layer. The hydrogen sensor includes a protective film formed at least either between the substrate and the thin film layer or on a surface of the catalyst layer. | 11-18-2010 |
20100301521 | WORKING OBJECT CUTTING METHOD - A working object cutting method capable of cutting a working object precisely is provided. The working object cutting method comprises irradiating a working object | 12-02-2010 |
20110001500 | Method and Apparatus for Examining Ion-Conductive Electrolyte Membrane - A detection membrane ( | 01-06-2011 |
20110021004 | METHOD OF CUTTING A SUBSTRATE, METHOD OF CUTTING A WAFER-LIKE OBJECT, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed. | 01-27-2011 |
20110027971 | METHOD OF CUTTING A SUBSTRATE, METHOD OF PROCESSING A WAFER-LIKE OBJECT, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed. | 02-03-2011 |
20110027972 | METHOD OF CUTTING A SUBSTRATE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed. | 02-03-2011 |
20110037149 | METHOD OF CUTTING A WAFER-LIKE OBJECT AND SEMICONDUCTOR CHIP - A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed. | 02-17-2011 |
20110306182 | METHOD OF CUTTING SEMICONDUCTOR SUBSTRATE - Multiphoton absorption is generated, so as to form a part which is intended to be cut | 12-15-2011 |
20120077315 | SEMICONDUCTOR SUBSTRATE CUTTING METHOD - A wafer having a front face formed with a functional device is irradiated with laser light while positioning a light-converging point within the wafer with the rear face of the wafer acting as a laser light incident face, so as to generate multiphoton absorption, thereby forming a starting point region for cutting due to a molten processed region within the wafer along a line. Consequently, a fracture can be generated from the starting point region for cutting naturally or with a relatively small force, so as to reach the front face and rear face. Therefore, when an expansion film is attached to the rear face of the wafer by way of a die bonding resin layer after forming the starting point region for cutting and then expanded, the wafer and die bonding resin layer can be cut along the line. | 03-29-2012 |
20120164432 | Hydrogen Storage Alloy and Hydrogen Storage Unit Using Same - A hydrogen storage alloy comprises a hydrogen storage base | 06-28-2012 |
20120171461 | Hydrogen Storage Unit - A hydrogen storage alloy unit comprises a porous body | 07-05-2012 |
20120190175 | LASER PROCESSING METHOD AND LASER PROCESSING APPARATUS - A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed. | 07-26-2012 |
20120205357 | LASER PROCESSING METHOD AND LASER PROCESSING APPARATUS - A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cutting line on the surface of the work to cause multiple photon absorption and with a condensed point located inside of the work, and a modified area is formed inside the work along the predetermined determined cutting line by moving the condensed point along the predetermined cut line, whereby the work is cut with a small force by cracking the work along the predetermined cutting line starting from the modified area and, because the pulse laser beam is hardly absorbed onto the surface. | 08-16-2012 |
20120228276 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE FORMED USING A SUBSTRATE CUTTING METHOD - A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cutting line on the surface of the work to cause multiple photon absorption and with a condensed point located inside of the work, and a modified area is formed inside the work along the predetermined determined cutting line by moving the condensed point along the predetermined cut line, whereby the work is cut with a small force by cracking the work along the predetermined cutting line starting from the modified area and, because the pulse laser beam is hardly absorbed onto the surface. | 09-13-2012 |
20120279947 | LASER PROCESSING METHOD AND LASER PROCESSING APPARATUS - A laser beam machining method and a laser beam machining device capable of cutting a work along a predetermined cutting line on the surface of the work, wherein a pulse laser beam is irradiated on the predetermined cutting line on the surface of the work causing a multiple photon absorption with a condensed point arranged inside the work, and a modified area is formed inside the work along the predetermined determined cutting line by moving the condensed point along the predetermined cutting line, whereby the work can be cut with a small force by cracking the work along the predetermined cutting line starting from the modified area. | 11-08-2012 |
20120299219 | LASER PROCESSING METHOD - The present invention provides a laser processing method which improves strength and quality of an object to be processed after working. In the present embodiment, after modified regions | 11-29-2012 |
20120329248 | METHOD OF CUTTING SEMICONDUCTOR SUBSTRATE - Multiphoton absorption is generated, so as to form a part which is intended to be cut | 12-27-2012 |
20130009284 | SUBSTRATE DIVIDING METHOD - A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate | 01-10-2013 |
20130012000 | SUBSTRATE DIVIDING METHOD - A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate | 01-10-2013 |
20130015167 | SUBSTRATE DIVIDING METHOD - A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate | 01-17-2013 |
20130017670 | LASER PROCESSING METHOD AND LASER PROCESSING APPARATUS - A laser processing method comprising a step of irradiating an object to be processed with laser light elliptically polarized with an ellipticity of other than 1 such that a light-converging point of the laser light is located within the object along the major axis of an ellipse indicative of the elliptical polarization of laser light, along a line which the object is intended to be cut, to form a modified region caused by multiphoton absorption within the object, along the line which the object is intended to be cut. | 01-17-2013 |
20130023076 | METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE - A light-emitting device manufacturing method comprises the steps of irradiating a substrate | 01-24-2013 |
20130028791 | HYDROGEN-ABSORBING ALLOY AND HYDROGEN SENSOR USING THE ALLOY - A hydrogen sensor using a hydrogen-absorbing alloy containing an Mg—Ni-based alloy and a Zr—Ti-based alloy includes a substrate ( | 01-31-2013 |
20130029250 | Electricity-Generation Device - An electricity generation device includes: a tubular fuel cell ( | 01-31-2013 |
20130029251 | Electricity-Generation Device - An electricity generation device ( | 01-31-2013 |
20130316517 | SUBSTRATE DIVIDING METHOD - A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate | 11-28-2013 |
20140286856 | Hydrogen Storage Method - A hydrogen storage method is provided which enables a hydrogen storage alloy to store hydrogen up to a maximum hydrogen storage amount thereof in excess of a generally known theoretical value. In a hydrogenation step, a hydrogen storage ratio calculated as an atomic weight ratio between hydrogen and the hydrogen storage alloy is obtained beforehand as a theoretical value, a pressure at which the hydrogen storage alloy stores hydrogen up to the theoretical value is set as a first pressure value, a pressure value ten or more times greater than the first pressure value is set as a second pressure value, and pressure is increased up to the second pressure value. In a dehydrogenation step, the pressure is decreased from the second pressure value to or below the first pressure value. The hydrogenation step and the dehydrogenation step are repeatedly executed. | 09-25-2014 |
20150056785 | SUBSTRATE DIVIDING METHOD - A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate | 02-26-2015 |