Patent application number | Description | Published |
20080214094 | METHOD FOR MANUFACTURING SILICON WAFER - A method for manufacturing a silicon wafer comprises a slicing step of a silicon single crystal ingot to obtain sliced wafers, a single-side grinding step to grind only one side of a wafer, and a smoothing step to smooth the other side of the wafer by controlling application of etchant depending on surface profile of the other side of the wafer. According to a method of the present invention a silicon wafer that has high flatness, is removed machine working damage, and is reduced of profile change of chamfer to be minimal can be manufactured. | 09-04-2008 |
20090004876 | Method for Etching Single Wafer - An object of the present invention is to provide a method for etching a single wafer, which effectively realizes a high flatness of wafer and an increase in productivity thereof. In a method for etching a single wafer, a single thin disk-like wafer sliced from a silicon single crystal ingot is spun, and a front surface of the wafer is etched with an etching solution supplied thereto. In the method, a plurality of supply nozzles are disposed above and opposite to the front surface of the wafer at different portions in the radial direction of the wafer, respectively; and then one or more conditions selected from the group consisting of temperatures, kinds, and supply flow rates of etching solutions from the plurality of supply nozzles are changed. | 01-01-2009 |
20090042390 | ETCHANT FOR SILICON WAFER SURFACE SHAPE CONTROL AND METHOD FOR MANUFACTURING SILICON WAFERS USING THE SAME - It is possible to reduce workloads of a both-side simultaneous polishing process or a single-side polishing process, and to achieve both of the maintenance of the wafer flatness and the reduction in wafer front side roughness upon completing a flattening process. A method for manufacturing silicon wafers according to the present invention includes a flattening process | 02-12-2009 |
20090053894 | Method for Manufacturing Epitaxial Wafer - A method for manufacturing an epitaxial wafer that can reduce occurrence of a surface defect or a slip formed on an epitaxial layer is provided. The manufacturing method is characterized by comprising: a smoothing step of controlling application of an etchant to a wafer surface in accordance with a surface shape of a silicon wafer to smooth the wafer surface; and an epitaxial layer forming step of forming an epitaxial layer formed of a silicon single crystal on the surface of the wafer based on epitaxial growth. | 02-26-2009 |
20090117749 | Etching Method of Single Wafer - Local shape collapse of a wafer end portion is suppressed to the minimum level, and a wafer front surface as well as a wafer end portion is uniformly etched while preventing an etchant from flowing to a wafer rear surface. | 05-07-2009 |
20090181546 | Single-Wafer Etching Method for Wafer and Etching Apparatus Thereof - A single-wafer etching apparatus according to the present invention supplies an etchant to an upper surface of a wafer while rotating the wafer, thereby etching the upper surface of the wafer. Further, wafer elevating means moves up and down the wafer, and a lower surface blow mechanism which blows off the etchant flowing down on an edge surface of the wafer toward a radially outer side of the wafer by injection of a gas is fixed and provided without rotating together with the wafer. Furthermore, gap adjusting means controls the wafer elevating means based on detection outputs from gap detecting means for detecting a gap between the wafer and the lower surface blow mechanism, thereby adjusting the gap. The apparatus according to the present invention uniformly etches the edge portion without collapsing a chamfered shape of the edge portion of the wafer, and prevents a glitter from being produced on the edge surface of the wafer. | 07-16-2009 |
20090289377 | SEMICONDUCTOR WAFER - The present invention is a semiconductor wafer including an orientation identification mark, which is used for identifying crystal orientation, on a peripheral surface thereof, in which the orientation identification mark has a terraced structure that is concave toward an inner diameter direction of the semiconductor wafer with respect to a portion outside of the orientation identification mark on the peripheral surface, and has a planar surface that is orthogonal to a diameter direction of the semiconductor wafer; and has a gloss different from that of the portion outside of the orientation identification mark on the peripheral surface. | 11-26-2009 |
20090289378 | SEMICONDUCTOR WAFER - The present invention is a semiconductor wafer including an orientation identification mark, which is used for identifying crystal orientation, on a peripheral surface thereof, in which the orientation identification mark is smoothly joined with a portion outside of the orientation identification mark on the peripheral surface, has a planar surface that is orthogonal to an inner diameter direction of the semiconductor wafer, and has a gloss different from that in the portion outside of the orientation identification mark on the peripheral surface. | 11-26-2009 |
20090290158 | SEMICONDUCTOR WAFER - The present invention is a semiconductor wafer 1 including an orientation identification mark | 11-26-2009 |
20090297755 | SEMICONDUCTOR WAFER - A semiconductor wafer has a diameter of 450 mm and a thickness of at least 725 μm and no greater than 900 μm. | 12-03-2009 |
20090311460 | SEMICONDUCTOR WAFER - A semiconductor wafer with high flatness is provided. The semiconductor wafer has a diameter φ of 450 mm and a thickness of at least 900 μm and no greater than 1,100 μm. | 12-17-2009 |
20090311808 | METHOD FOR PRODUCING SEMICONDUCTOR WAFER - A semiconductor wafer is produced by a method comprising a slicing step, an one-side polishing step and a chemical treating step, in which the kerf loss is reduced and the flatness is improved. | 12-17-2009 |
20090311863 | METHOD FOR PRODUCING SEMICONDUCTOR WAFER - A semiconductor wafer is produced by a method comprising a slicing step of cutting out a thin disc-shaped semiconductor wafer from a crystalline ingot; a fixed grain bonded abrasive grinding step of sandwiching the semiconductor wafer between a pair of upper and lower plates each having a pad of fixed grain bonded abrasive to simultaneously grind both surfaces of the semiconductor wafer; and a one-side polishing step subjected to both surfaces of the semiconductor wafer after the fixed grain bonded abrasive grinding step. | 12-17-2009 |
20090311948 | METHOD FOR PRODUCING SEMICONDUCTOR WAFER - A semiconductor wafer is produced by a method comprising a slicing step, a fixed grain bonded abrasive grinding step and a beveling step, in which the kerf loss is reduced and the flatness is improved. | 12-17-2009 |
20090311949 | METHOD FOR PRODUCING SEMICONDUCTOR WAFER - A semiconductor wafer is produced by a method comprising a slicing step of cutting out a thin disc-shaped semiconductor wafer from a crystalline ingot; and a fixed grain bonded abrasive grinding step of sandwiching the semiconductor wafer between a pair of upper and lower plates each having a pad of fixed grain bonded abrasive to simultaneously grind both surfaces of the semiconductor wafer. | 12-17-2009 |
20100006982 | METHOD OF PRODUCING SEMICONDUCTOR WAFER - There is provided a method of producing a semiconductor wafer which is high in the beveling accuracy and the yield for large-size wafers having a diameter of not less than 450 mm, comprising a slicing step for cutting out a disc-shaped wafer having a diameter of not less than 450 mm from a single crystal ingot, a step for lapping a surface of the wafer to conduct planarization, a step for beveling an edge portion of the wafer, a step for grinding the surface of the wafer and a step for mirror-polishing the surface of the wafer, wherein the planarizing step performs the lapping with free abrasive grains of #1000 to #1500. | 01-14-2010 |
20100009155 | SEMICONDUCTOR WAFER AND PRODUCTION METHOD THEREOF - It is to provide a double-side mirror-finished semiconductor wafer having an excellent flatness by conducting a polishing step from rough polishing to finish polishing for simultaneously polishing both surfaces of a raw wafer with the same polishing cloth to reduce the polishing amount of the raw wafer as well as a production method thereof. | 01-14-2010 |
20100021688 | WAFER MANUFACTURING METHOD AND WAFER OBTAINED THROUGH THE METHOD - A wafer manufacturing method includes after flattening both upper and lower surfaces of a wafer sliced from a single crystal ingot, processing the wafer having damage on both surfaces caused by the flattening, so as to obtain desired damage at least on the lower surface of the wafer, the desired damage having a damage depth ranging from 5 nm-10 μm; forming a polysilicon layer at least on the lower surface of the wafer while the damage on the lower surface of the wafer remains; single-wafer etching the upper surface of the wafer; and final polishing the upper surface of the wafer to have a mirrored surface, after the single-wafer etching. | 01-28-2010 |
20100151597 | METHOD FOR SMOOTHING WAFER SURFACE AND APPARATUS USED THEREFOR - Disclosed is a method for smoothing the surface of at least one side of a wafer which is obtained by slicing a semiconductor ingot. In this method, a fluid is applied according to projections of the wafer surface, thereby reducing the projections. Alternatively, a fluid is applied over the wafer surface, thereby smoothing the entire surface of the wafer while reducing the projections in the wafer surface. | 06-17-2010 |
20110263183 | POLISHING SOLUTION DISTRIBUTION APPARATUS AND POLISHING APPARATUS HAVING THE SAME - The present invention provides a polishing solution distribution apparatus capable of reducing distribution deviation of polishing solution even when leveling for installation is insufficient or inclination of an installation location varies and a polishing apparatus having the same. The polishing solution distribution apparatus includes a cone-shaped branch body in which a solution pan to store supplied polishing solution is formed and in which plural flow passages radially connected to a side face of the solution pan respectively and having a delivery port to supply polishing solution to a position lower than the connected position are formed, a support portion to support the branch body, and a universal joint mechanism to support the branch body via the support portion at a position being higher than the gravity center of the branch body. | 10-27-2011 |
20120071064 | FIXED ABRASIVE-GRAIN PROCESSING DEVICE, METHOD OF FIXED ABRASIVE-GRAIN PROCESSING, AND METHOD FOR PRODUCING SEMICONDUCTOR WAFER - Disclosure relates to a fixed abrasive-grain processing device and a method of fixed abrasive-grain processing used for producing a semiconductor wafer, and a method for producing a semiconductor wafer which make the surface of the semiconductor wafer possible to have preferable flatness and which can prevent the number of steps and the installation area of facilities from increasing. The producing of semiconductor wafers uses a fixed abrasive-grain processing device including a lower fixed abrasive-grain layer that is adjacent to the top surface of the lower surface-plate and that grinds the top surfaces of the plurality of semiconductor wafers; an upper fixed abrasive-grain layer that is adjacent to the bottom surface of the upper surface-plate and that grinds the bottom surfaces of the plurality of semiconductor wafers; a carrier plate that is horizontally interposed between the lower surface-plate and the upper surface-plate and that includes a plurality of holes each accommodating one of the plurality of semiconductor wafers; and a carrier rotating device that circularly moves the carrier plate, wherein the lower fixed abrasive-grain layer and the upper fixed abrasive-grain layer include fixed abrasive grain having a diameter of 4 μm or less and being dispersed and fixed in elastic members. | 03-22-2012 |
20120315739 | MANUFACTURING METHOD FOR SEMICONDUCTOR WAFER - All treatments performed in machining processes other than a polishing process are performed while pure water free from free abrasive grains is supplied. Thus, an amount of abrasive grains included in a used processing liquid discharged in each process is reduced and semiconductor scraps are collected from the used slurry for recycling. | 12-13-2012 |