Patent application number | Description | Published |
20140109959 | DYE-SENSITIZED SOLAR CELL COMPRISING ION LAYER AND METHOD FOR MANUFACTURING - The present invention relates to a dye-sensitized solar cell and to a method for manufacturing same, and more specifically, provides a novel dye-sensitized solar cell for preventing photoelectron recombination due to a triiodide, and to a method for manufacturing same. The dye-sensitized solar cell, according to the present invention, comprises a metal oxide resulting from coadsorbing, on a surface of the dye-sensitized solar cell, a reactive compound which can react with iodine with a dye. The dye-sensitized solar cell is highly efficient by being able to prevent the photoelectron recombination due to the triiodide while using a small amount of the dye. | 04-24-2014 |
20140124025 | METAL OXIDE SEMICONDUCTOR ELECTRODE HAVING POROUS THIN FILM, DYE-SENSITIZED SOLAR CELL USING SAME, AND METHOD FOR MANUFACTURING SAME - The present invention relates to a dye-sensitized solar cell and to a method for manufacturing same, and more specifically, to a novel dye-sensitized solar cell for preventing photoelectron recombination due to a triiodide, and to a method for manufacturing same. The dye-sensitized solar cell, according to the present invention, comprises a metal oxide which is produced by co-adsorption of a reactive compound, which can react with iodine, with a dye on a surface of the dye-sensitized solar cell. The dye-sensitized solar cell can achieve high efficiency by preventing the photoelectron recombination due to the triiodide while using a small amount of the dye. | 05-08-2014 |
20140175824 | GLOVE BOX FOR VEHICLE - Disclosed is a glove box for a vehicle including: an opening formed in an instrument panel; a box-shaped body which is ejectable and retractable through the opening and which is provided with a guide rail and a rack gear, the guide rail including a linear portion linearly extending in a direction in which the box-shaped body moves and a curved portion extending in a curve from an end of the linear portion, the rack gear being formed along one side of the guide rail; and an actuator provided with a pinion gear which meshes with the rack gear, and a drive unit which transfers driving force to the pinion gear. | 06-26-2014 |
20150017899 | SYSTEM FOR MIXING CABIN AIR AND OUTSIDE AIR OF AIR-CONDITIONER FOR VEHICLE AND METHOD OF CONTROLLING THE SAME - A system and a method for mixing cabin and outside air of a vehicle air-conditioner may include a housing having cabin and outside air inlets for ventilating the cabin and outside air, a first door part to selectively cover at least a portion of the cabin air inlet and/or a portion of the outside air inlet to adjust an open value of each of the inlets, a second door part to selectively cover the remaining portion of the outside air inlet to adjust the open value of the outside air inlet, a cam part rotatable in the housing and formed with first and second slots to which the first and second door parts are slidably coupled such that rotation angle of the first or the second door part is varied according to rotation of the cam part, and a controlling unit controlling the rotation of the cam part. | 01-15-2015 |
Patent application number | Description | Published |
20090085160 | Semiconductor Device Including Insulating Layer of Cubic System or Tetragonal System - Provided is a semiconductor device including an insulating layer of a cubic system or a tetragonal system, having good electrical characteristics. The semiconductor device includes a semiconductor substrate including an active region, a transistor that is formed in the active region of the semiconductor substrate, an interlevel insulating layer that is formed on the semiconductor substrate and a contact plug that is formed in the interlevel insulating layer and that is electrically connected to the transistor. The semiconductor device may include a lower electrode that is formed on the interlevel insulating layer and that is electrically connected to the contact plug, an upper electrode that is formed on the lower electrode and an insulating layer of a cubic system or a tetragonal system including a metal silicate layer. The insulating layer may be formed between the lower electrode and the upper electrode. | 04-02-2009 |
20090127611 | NON-VOLATILE MEMORY DEVICE AND MEMORY CARD AND SYSTEM INCLUDING THE SAME - A non-volatile memory device includes a semiconductor layer including source and drain regions and a channel region between the source and drain regions; a tunneling insulating layer on the channel region of the semiconductor layer; a charge storage layer on the tunneling insulating layer; a blocking insulating layer on the charge storage layer and including a first oxide layer with a first thickness, a high-k dielectric layer, and a second oxide layer with a second thickness different from the first thickness that are stacked sequentially on the charge storage layer; and a control gate on the blocking insulating layer. | 05-21-2009 |
20120168904 | Semiconductor Device Including Insulating Layer of Cubic System or Tetragonal System - Provided is a semiconductor device including an insulating layer of a cubic system or a tetragonal system, having good electrical characteristics. The semiconductor device includes a semiconductor substrate including an active region, a transistor that is formed in the active region of the semiconductor substrate, an interlevel insulating layer that is formed on the semiconductor substrate and a contact plug that is formed in the interlevel insulating layer and that is electrically connected to the transistor. The semiconductor device may include a lower electrode that is formed on the interlevel insulating layer and that is electrically connected to the contact plug, an upper electrode that is formed on the lower electrode and an insulating layer of a cubic system or a tetragonal system including a metal silicate layer. The insulating layer may be formed between the lower electrode and the upper electrode. | 07-05-2012 |
20140054675 | VERTICAL TYPE SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME - According to example embodiments, a vertical type semiconductor device includes a pillar structure on a substrate. The pillar structure includes a semiconductor pattern and a channel pattern. The semiconductor pattern includes an impurity region. A first word line structure faces the channel pattern and is horizontally extended while surrounding the pillar structure. A second word line structure has one side facing the impurity region of the semiconductor pattern and another side facing the substrate. A common source line is provided at a substrate portion adjacent to a sidewall end portion of the second word line structure. | 02-27-2014 |
Patent application number | Description | Published |
20090159955 | NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A nonvolatile memory device includes a semiconductor substrate, a tunneling insulation layer on the semiconductor substrate, a charge storage layer on the tunneling insulation layer, an inter-electrode insulation layer on the charge storage layer, and a control gate electrode on the inter-electrode insulation layer. The inter-electrode insulation layer includes a high-k dielectric layer having a dielectric constant greater than that of a silicon nitride, and an interfacial layer between the charge storage layer and the high-k dielectric layer. The interfacial layer includes a silicon oxynitride layer. | 06-25-2009 |
20090321810 | NON-VOLATILE MEMORY DEVICE, MEMORY CARD AND SYSTEM - Provided is a non-volatile memory device including; a substrate having source/drain regions and a channel region between the source/drain regions; a tunneling insulating layer formed in the channel region of the substrate; a charge storage layer formed on the tunneling insulating layer; a blocking insulating layer formed on the charge storage layer, and comprising a silicon oxide layer and a high-k dielectric layer sequentially formed; and a control gate formed on the blocking insulating layer, wherein an equivalent oxide thickness of the silicon oxide layer is equal to or greater than that of the high-k dielectric layer. | 12-31-2009 |
20100187595 | NONVOLATILE MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME - Nonvolatile memory devices and related methods of manufacturing the same are provided. A nonvolatile memory device includes a tunneling layer on a substrate, a floating gate on the tunneling layer, an inter-gate dielectric layer structure on the floating gate, and a control gate on the inter-gate dielectric layer structure. The inter-gate dielectric layer structure includes a first silicon oxide layer, a high dielectric layer on the first silicon oxide layer, and a second silicon oxide layer on the high dielectric layer opposite to the first silicon oxide layer The high dielectric layer may include first and second high dielectric layers laminated on each other, and the first high dielectric layer may have a lower density of electron trap sites than the second high dielectric layer and may have a larger energy band gap or conduction band-offset than the second high dielectric layer. | 07-29-2010 |