Patent application number | Description | Published |
20080303930 | PHOTOELECTRIC CONVERSION DEVICE AND IMAGE-PICKUP APPARATUS - In a photoelectric conversion device, groups of unit pixels are arranged in a well, where each of the unit pixels includes photoelectric conversion elements, an amplifier transistor, and transfer transistors. The photoelectric conversion device includes a line used to supply a voltage to the well, a well-contact part used to connect the well-voltage-supply line to the well, and transfer-control lines used to control the transfer transistors. The transfer-control lines are symmetrically arranged with respect to the well-voltage-supply line in respective regions of the unit-pixel groups. | 12-11-2008 |
20090015699 | IMAGE SENSING APPARATUS DRIVING METHOD, IMAGE SENSING APPARATUS, AND IMAGE SENSING SYSTEM - Since pixel signals are not only added in the row direction but also averaged in the column direction, it is possible to sufficiently increase the frame rate even when the number of pixels increases. Additionally, since the spatial centers of gravity of the added or averaged signals are arranged at equal intervals in a Bayer array, it is possible to reduce false color (moiré) generation and suppress the decrease in the spatial resolution. | 01-15-2009 |
20090085144 | PHOTOELECTRIC CONVERSION DEVICE, METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE, AND IMAGE PICKUP SYSTEM - A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C | 04-02-2009 |
20090159945 | IMAGE PICKUP APPARATUS AND IMAGE PICKUP SYSTEM - To provide a solid-state image pickup apparatus with little or no difference in the dark currents between adjacent photoelectric conversion elements and providing a high sensitivity and a low dark current even in a high-speed readout operation. | 06-25-2009 |
20090207292 | SOLID-STATE IMAGING APPARATUS AND DRIVING METHOD THEREOF - A solid state imaging apparatus of less fixed pattern noises and less shading comprises an imaging area wherein a plurality of pixel circuits are arranged in two dimensionally, and each of the pixel circuits includes a plurality of photoelectric conversion elements each for generating an electric charge by a photoelectric conversion and for accumulating the electric charge, a single floating diffusion portion for accumulating the charge, a plurality of transfer switches for transferring the electric charges respectively from the plurality of photoelectric conversion elements to the single floating diffusion portion and an amplifying transistor for amplifying a voltage corresponding to the electric charge accumulated by the floating diffusion portion, wherein the plurality of transfer switches transfers the electric charges from the plurality of photoelectric conversion elements sequentially to the floating diffusion portion while maintaining the amplifying transistors at the activation state. | 08-20-2009 |
20090244340 | IMAGE PICKUP DEVICE AND IMAGE PICKUP SYSTEM - There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a source follower transistor for outputting a signal based on a voltage of the floating node to a signal line, and a clip circuit clipping the signal line at a first voltage and a second voltage. | 10-01-2009 |
20090256230 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE PHOTOELECTRIC CONVERSION APPARATUS - In a photoelectric conversion apparatus including a charge holding portion, a part of an element isolation region contacting with a semiconductor region constituting the charge holding portion extends from a reference surface including the light receiving surface of a photoelectric conversion element into a semiconductor substrate at a level equal to or deeper than the depth of the semiconductor region in comparison with the semiconductor region. | 10-15-2009 |
20090303365 | SOLID-STATE IMAGING APPARATUS, DRIVING METHOD THEREOF AND IMAGING SYSTEM - A solid-state imaging apparatus includes: a plurality of photoelectric conversion elements arranged in a matrix and converting light into electric carriers; a transfer gate for transferring the electric carriers generated by the conversion to a floating node; a first transistor for amplifying a signal based on a voltage of the floating node and for outputting the amplified signal to a column signal line; and a second transistor for resetting the voltage of the floating node, wherein the solid-state imaging apparatus includes a transfer unit for combining signals from the column signal lines, based on the voltage of the floating nodes after the reset of the floating nodes by the second transistor, wherein outputting a signal based on the combined signals from the column signal lines based on the voltage of the floating nodes, for detecting a flicker of an imaging light source. | 12-10-2009 |
20100096676 | PHOTOELECTRIC CONVERSION DEVICE, METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE, AND IMAGE PICKUP SYSTEM - A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C | 04-22-2010 |
20100203667 | MANUFACTURING METHOD FOR A SOLID-STATE IMAGE SENSOR - A manufacturing method for a solid-state image sensor, the method comprises the steps of: forming a charge storage region in a photoelectric converting unit by implanting a semiconductor substrate with ions of an impurity of a first conductivity type, using a first mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); forming a surface region of the charge storage region by implanting the semiconductor substrate with ions of an impurity of a second conductivity type, using a second a mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); and forming an antireflection film that covers the photoelectric converting unit at a temperature of less than 800° C., after the step of forming the surface region, in this order. | 08-12-2010 |
20100203670 | SEMICONDUCTOR DEVICE FABRICATION METHOD - A method of fabricating a semiconductor device, comprises steps of forming a common contact hole for a first conductivity-type region and a second conductivity-type region, implanting an impurity in at least one of the first conductivity-type region and the second conductivity-type region, and forming a shared contact plug by filling an electrical conducting material in the contact hole, wherein in the implanting step, an impurity is implanted in at least one of the first conductivity-type region and the second conductivity-type region such that the first conductivity-type region and the shared contact plug are brought into ohmic contact with each other, and the second conductivity-type region and the shared contact plug are brought into ohmic contact with each other. | 08-12-2010 |
20100214464 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus includes: an electric charge collecting region ( | 08-26-2010 |
20110003426 | PHOTOELECTRIC CONVERSION DEVICE METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICE AND IMAGE PICKUP SYSTEM - A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor. | 01-06-2011 |
20110007196 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus including a plurality of pixels each including: a first holding portion for holding signal carriers from a photoelectric conversion portion; an amplifying portion for amplifying and reading a signal based on the signal carriers generated in the photoelectric conversion portion; and a carrier discharging control portion for discharging charge carriers in the photoelectric conversion portion to an OFD region, and having a carrier path between the photoelectric conversion portion and the first carrier holding portion, in which the solid-state imaging apparatus further includes a second carrier holding portion electrically connected with the first carrier portion in parallel through a first transfer unit, when viewed from an output node of the photoelectric conversion portion, thereby smoothing an movie imaging without causing discontinuous frame while suppressing generation of noise mixing into the charge carrier holding portion. | 01-13-2011 |
20110134296 | PHOTOELECTRIC CONVERSION DEVICE AND IMAGE-PICKUP APPARATUS - In a photoelectric conversion device, groups of unit pixels are arranged in a well, where each of the unit pixels includes photoelectric conversion elements, an amplifier transistor, and transfer transistors. The photoelectric conversion device includes a line used to supply a voltage to the well, a well-contact part used to connect the well-voltage-supply line to the well, and transfer-control lines used to control the transfer transistors. The transfer-control lines are symmetrically arranged with respect to the well-voltage-supply line in respective regions of the unit-pixel groups. | 06-09-2011 |
20110157447 | PHOTOELECTRIC CONVERSION DEVICE METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICE AND IMAGE PICKUP SYSTEM - A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor. | 06-30-2011 |
20110163407 | PHOTOELECTRIC CONVERSION DEVICE, METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE, AND IMAGE PICKUP SYSTEM - A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C | 07-07-2011 |
20110175151 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM USING PHOTOELECTRIC CONVERSION APPARATUS - A photoelectric conversion apparatus includes a plurality of photoelectric conversion elements configured to convert incident light to electric carriers, an amplifier MOS transistor shared by the plurality of photoelectric conversion elements, a plurality of floating diffusions connected to the gate electrode of the amplifier MOS transistor, and a plurality of transfer MOS transistors arranged corresponding to the respective photoelectric conversion elements, each of the transfer MOS transistors transferring electric carriers from corresponding one of the photoelectric conversion elements to corresponding one of the floating diffusions. In such a photoelectric conversion apparatus, at least two of the floating diffusions are electrically connected to each other with a wiring line included in the same wiring layer as the gate electrode of the amplifier MOS transistor. | 07-21-2011 |
20110234868 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM - A photoelectric conversion apparatus comprises multiple photoelectric conversion portions ( | 09-29-2011 |
20110240835 | PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD THEREOF, AND CAMERA - A photoelectric conversion device comprises an n-type surface region, a p-type region which is formed under the surface region, and an n-type buried layer which is formed under the p-type region, wherein the surface region, the p-type region, and the buried layer form a buried photodiode, and a diffusion coefficient of a dominant impurity of the surface region is smaller than a diffusion coefficient of a dominant impurity of the buried layer. | 10-06-2011 |
20110242387 | PHOTOELECTRIC CONVERSION APPARATUS AND MANUFACTURING METHOD FOR A PHOTOELECTRIC CONVERSION APPARATUS - A photoelectric conversion apparatus ( | 10-06-2011 |
20110242388 | IMAGE SENSING DEVICE AND CAMERA - An image sensing device comprises a pixel array, and a peripheral circuit, a column selecting circuit, and a readout, wherein each pixel includes a photodiode, a floating diffusion, a transfer PMOS transistor to the floating diffusion, an amplifier PMOS transistor, and a reset PMOS transistor, the amplifier PMOS transistor has a gate which is formed by an n-type conductive pattern, and is isolated by a first element isolation region and an n-type impurity region which covers at least a lower portion of the first element isolation region, and each PMOS transistor included in the column selecting circuit has a gate which is formed by a p-type conductive pattern and is isolated by a second element isolation region, and an n-type impurity concentration in a region adjacent to a lower portion of the second element isolation region is lower than that in the n-type impurity region. | 10-06-2011 |
20110249163 | PHOTOELECTRIC CONVERSION DEVICE AND CAMERA - A photoelectric conversion device comprises a p-type region, an n-type buried layer formed under the p-type region, an element isolation region, and a channel stop region which covers at least a lower portion of the element isolation region, wherein the p-type region and the buried layer form a photodiode, and a diffusion coefficient of a dominant impurity of the channel stop region is smaller than a diffusion coefficient of a dominant impurity of the buried layer. | 10-13-2011 |
20110281392 | METHOD FOR MANUFACTURING SOLID-STATE IMAGE SENSOR - A method for manufacturing a sensor having pixels on a substrate, each pixel including a photoelectric converter, a charge-voltage converter, and a gate for forming a channel for transferring charges in the photoelectric converter to the charge-voltage converter, comprises a step of implanting ions into target regions, of the substrate, where the photoelectric converters are to be formed, wherein the step is performed N times, in each of the steps, the ions are implanted along a direction with an inclined angle with respect to a normal to the substrate surface, the target regions where the ions are implanted are different in each step, and for each step, a mask is formed on the substrate, having an opening for every N pixels, a plurality of the openings periodically arranged in a direction along an intersection line between the surface and a plane determined by the normal and the direction. | 11-17-2011 |
20120133812 | SOLID-STATE IMAGING APPARATUS AND DRIVING METHOD THEREOF - A solid state imaging apparatus of less fixed pattern noises and less shading comprises an imaging area wherein a plurality of pixel circuits are arranged in two dimensionally, and each of the pixel circuits includes a plurality of photoelectric conversion elements each for generating an electric charge by a photoelectric conversion and for accumulating the electric charge, a single floating diffusion portion for accumulating the charge, a plurality of transfer switches for transferring the electric charges respectively from the plurality of photoelectric conversion elements to the single floating diffusion portion and an amplifying transistor for amplifying a voltage corresponding to the electric charge accumulated by the floating diffusion portion, wherein the plurality of transfer switches transfers the electric charges from the plurality of photoelectric conversion elements sequentially to the floating diffusion portion while maintaining the amplifying transistors at the activation state. | 05-31-2012 |
20120181590 | IMAGE PICKUP APPARATUS AND IMAGE PICKUP SYSTEM - A solid-state image pickup apparatus with little or no difference in the dark currents between adjacent photoelectric conversion elements, and that provides a high sensitivity and a low dark current even in a high-speed readout operation, includes a well formed on a wafer, and semiconductor layers formed in the well to constitute photodiodes. A well contact is formed between the semiconductor layers. Element isolation regions are provided between the well contact and the semiconductor layers, and channel stop layers are provided under the element isolation regions. A conductive layer is provided on the element isolation region, and a side wall is provided on a side face of the conductive layer. A distance a between an end of the element isolation region and the conductive layer, a width b of the side wall and a device isolation width c satisfy a relation c>a≧b. | 07-19-2012 |
20120194724 | IMAGE PICKUP DEVICE AND IMAGE PICKUP SYSTEM - There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a source follower transistor for outputting a signal based on a voltage of the floating node to a signal line, and a clip circuit clipping the signal line at a first voltage and a second voltage. | 08-02-2012 |
20120267747 | SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR MANUFACTURING THE SAME - A solid-state image pickup device according to the present invention is a backside-illuminated solid-state image pickup device that includes a plurality of pixels each having a photoelectric conversion portion. A p-type semiconductor region | 10-25-2012 |
20130140608 | PHOTOELECTRIC CONVERSION DEVICE AND IMAGE-PICKUP APPARATUS - In a photoelectric conversion device, groups of unit pixels are arranged in a well, where each of the unit pixels includes photoelectric conversion elements, an amplifier transistor, and transfer transistors. The photoelectric conversion device includes a line used to supply a voltage to the well, a well-contact part used to connect the well-voltage-supply line to the well, and transfer-control lines used to control the transfer transistors. The transfer-control lines are symmetrically arranged with respect to the well-voltage-supply line in respective regions of the unit-pixel groups. | 06-06-2013 |
20130206964 | SOLID-STATE IMAGING APPARATUS WITH EACH PIXEL INCLUDING A PHOTOELECTRIC CONVERSION PORTION AND PLURAL HOLDING PORTIONS - A solid-state imaging apparatus including a plurality of pixels each including: a first holding portion for holding signal carriers from a photoelectric conversion portion; an amplifying portion for amplifying and reading a signal based on the signal carriers generated in the photoelectric conversion portion; and a carrier discharging control portion for discharging charge carriers in the photoelectric conversion portion to an OFD region, and having a carrier path between the photoelectric conversion portion and the first carrier holding portion, in which the solid-state imaging apparatus further includes a second carrier holding portion electrically connected with the first carrier portion in parallel through a first transfer unit, when viewed from an output node of the photoelectric conversion portion, thereby smoothing an movie imaging without causing discontinuous frame while suppressing generation of noise mixing into the charge carrier holding portion. | 08-15-2013 |
20130248955 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE PHOTOELECTRIC CONVERSION APPARATUS - In a photoelectric conversion apparatus including a charge holding portion, a part of an element isolation region contacting with a semiconductor region constituting the charge holding portion extends from a reference surface including the light receiving surface of a photoelectric conversion element into a semiconductor substrate at a level equal to or deeper than the depth of the semiconductor region in comparison with the semiconductor region. | 09-26-2013 |
20130277534 | SOLID-STATE IMAGE SENSOR, METHOD OF MANUFACTURING THE SAME, AND CAMERA - A solid-state image sensor comprises a first substrate and a second substrate combined with each other, the first substrate comprising a photoelectric conversion portion, a holding portion which holds a charge generated in the photoelectric conversion portion, a transfer portion which transfers the charge generated in the photoelectric conversion portion to the holding portion, and a first electrode connected to the holding portion, and the second substrate comprising a second electrode and an amplifier portion which is connected to the second electrode and amplifies a signal in the holding portion, wherein the holding portion and the amplifier portion are electrically connected to each other by a capacitance formed by the first electrode and the second electrode. | 10-24-2013 |
20140042507 | IMAGE PICKUP APPARATUS AND IMAGE PICKUP SYSTEM - An image pickup apparatus includes a pixel portion in which pixels are arranged, the pixels each including a first semiconductor region of first conductivity type having signal charges as majority carriers and a second semiconductor region of second conductivity type having signal charges as minority carriers, the second semiconductor region being contiguous to the first semiconductor region, the first semiconductor region being disposed between a surface of a semiconductor substrate. The pixel portion includes a class I pixel and a class II pixel located near a reference contact. A distance between the surface of the semiconductor substrate and the second semiconductor region of the class I pixel is smaller than a distance between the surface of the semiconductor substrate and the second semiconductor region of the class II pixel. | 02-13-2014 |
20140091416 | PHOTOELECTRIC CONVERSION APPARATUS AND MANUFACTURING METHOD FOR A PHOTOELECTRIC CONVERSION APPARATUS - A photoelectric conversion apparatus has multiple photoelectric converting units disposed in a semiconductor substrate, and isolation portions disposed in the semiconductor substrate. Each photoelectric converting unit includes a second semiconductor region, a third semiconductor region, disposed below the second semiconductor region and a fourth semiconductor region disposed below the third semiconductor region. Each isolation portion includes a fifth semiconductor region, placed deeper than the surface of the semiconductor substrate and at least extending laterally to the second semiconductor region, containing a first conductivity type impurity, and a sixth semiconductor region, below the fifth semiconductor region and at least extending laterally to the third semiconductor region, containing the first conductivity type impurity, and the diffusion coefficient of the impurity contained in the fifth semiconductor region is lower than the diffusion coefficient of the impurity contained in the sixth semiconductor region. | 04-03-2014 |
20140168492 | PHOTOELECTRIC CONVERSION DEVICE AND CAMERA - A photoelectric conversion device comprises a p-type region, an n-type buried layer formed under the p-type region, an element isolation region, and a channel stop region which covers at least a lower portion of the element isolation region, wherein the p-type region and the buried layer form a photodiode, and a diffusion coefficient of a dominant impurity of the channel stop region is smaller than a diffusion coefficient of a dominant impurity of the buried layer. | 06-19-2014 |
20140291732 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE PHOTOELECTRIC CONVERSION APPARATUS - In a photoelectric conversion apparatus including a charge holding portion, a part of an element isolation region contacting with a semiconductor region constituting the charge holding portion extends from a reference surface including the light receiving surface of a photoelectric conversion element into a semiconductor substrate at a level equal to or deeper than the depth of the semiconductor region in comparison with the semiconductor region. | 10-02-2014 |
20140367747 | PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - An exemplary embodiment is a photoelectric conversion device having a photoelectric conversion portion, and a transfer portion. The transfer portion transfers charges of the photoelectric conversion portion. The photoelectric conversion portion includes first and second semiconductor regions of a first conductivity type. Charges generated by photoelectric conversion are accumulated in the first and second semiconductor regions. According to the structure of the first and second semiconductor regions of the exemplary embodiment or the method for manufacturing them, the transfer efficiency of charges can be improved while improving the sensitivity of the photoelectric conversion portion. | 12-18-2014 |