Patent application number | Description | Published |
20090085055 | Method for Growing an Epitaxial Layer - A method for growing an epitaxial layer and devices obtained by that method are disclosed. The method starts by providing a growth substrate having a top surface characterized by a first thermal expansion coefficient (TEC). A mask having a plurality of openings therein is formed on the top surface of the growth substrate. The top surface of the growth substrate is exposed through the openings in the mask. A first epitaxial layer of a first material is grown on the exposed top surface of the openings to form discrete islands of the first material. The discrete islands from adjacent openings in the mask do not contact one another. The first epitaxial layer is characterized by a second TEC. The first and second TECs differ by more than 5 percent. The mask includes a mask material on which the first material will not nucleate. | 04-02-2009 |
20090096349 | CROSS FLOW CVD REACTOR - A cross flow chemical vapor deposition chamber can comprise an inlet duct having a generally rectangular cross-section and an outlet duct having a generally rectangular cross-section. The rectangular inlet duct and the rectangular outlet duct can facilitate laminar flow of reactant gases over a susceptor. Movable partitions can be configured to define a plurality of zones within the chamber. Each zone can contain a different reactant gas, concentration of reactant gas, and/or flow rate of reactant gas. Enhanced laminar flow can be provided, undesirable depletion of reactant gas can be mitigated, and enhanced control of reactant gases can be facilitated. | 04-16-2009 |
20090126631 | CHEMICAL VAPOR DEPOSITION REACTOR HAVING MULTIPLE INLETS - A chemical vapor deposition reactor has a wafer carrier which cooperates with a chamber of the reactor to facilitate laminar flow of reaction gas within the chamber and a plurality of injectors configured in flow controllable zones so as to mitigate depletion. | 05-21-2009 |
20090242924 | LIGHT EMITTING DIODES WITH SMOOTH SURFACE FOR REFLECTIVE ELECTRODE - A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 at a surface whereon the first electrode is formed. | 10-01-2009 |
20090272989 | LIGHT EMITTING DEVICE HAVING STACKED MULTIPLE LEDS - A light emitting device and method of producing the same is disclosed. The light emitting device includes a heterostructure having a plurality of light emitting diodes (LEDs) stacked one on top of another. | 11-05-2009 |
20100068381 | CHEMICAL VAPOR DEPOSITION REACTOR HAVING MULTIPLE INLETS - A chemical vapor deposition reactor has a wafer carrier which cooperates with a chamber of the reactor to facilitate laminar flow of reaction gas within the chamber and a plurality of injectors configured in flow controllable zones so as to mitigate depletion. | 03-18-2010 |
20100236483 | CHEMICAL VAPOR DEPOSITION REACTOR HAVING MULTIPLE INLETS - A chemical vapor deposition reactor has a wafer carrier which cooperates with a chamber of the reactor to facilitate laminar flow of reaction gas within the chamber and a plurality of injectors configured in flow controllable zones so as to mitigate depletion. | 09-23-2010 |
20110008923 | LIGHT EMITTING DIODES WITH SMOOTH SURFACE FOR REFLECTIVE ELECTRODE - A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 at a surface whereon the first electrode is formed. | 01-13-2011 |
20110069490 | Phosphor Layer having Enhanced Thermal Conduction and Light Sources Utilizing the Phosphor Layer - A light conversion composition and light sources utilizing that composition are disclosed. The light conversion composition includes a transparent carrier medium, a phosphor conversion medium, and a heat-conducting medium. The transparent carrier medium is transparent to light at first and second wavelengths. The phosphor conversion medium converts light of the first wavelength to light of the second wavelength, the phosphor conversion medium being dispersed in the transparent carrier medium. The heat-conducting medium has a thermal resistance that is less than that of the carrier medium. The heat-conducting medium is dispersed in the transparent carrier medium such that the heat-conducting medium is present in a concentration sufficient to yield a net thermal resistance that is less than 90 percent of the carrier thermal resistance. The heat-conducting medium can include particles of a transparent crystalline material, such as silicon, diamond, or sapphire. | 03-24-2011 |
20110092005 | LIGHT-EMITTING-DIODE ARRAY AND METHOD FOR MANUFACTURING THE SAME - A method for forming a light-emitting-diode (LED) array is disclosed which comprises forming a LED structure on a substrate, dividing the LED structure into at least a first and a second LED device with a gap, depositing at least one polymer material over the LED structure substantially filling the gap, removing portions of the at least one polymer material to expose a first electrode of the first LED device and a second electrode of the second LED device, and forming an interconnect on top of the at least one polymer material electrically connecting the first and second electrode. | 04-21-2011 |
20110097876 | CHEMICAL VAPOR DEPOSITION REACTOR HAVING MULTIPLE INLETS - A chemical vapor deposition reactor has a wafer carrier which cooperates with a chamber of the reactor to facilitate laminar flow of reaction gas within the chamber and a plurality of injectors configured in flow controllable zones so as to mitigate depletion. | 04-28-2011 |
20110108862 | LIGHT-EMITTING-DIODE ARRAY AND METHOD FOR MANUFACTURING THE SAME - A light-emitting-diode (LED) array is disclosed which comprises a first LED device having a first electrode, a second LED device having a second electrode, wherein the first and the second LED device are formed on the same substrate and separated by a gap, at least one polymer material substantially filling the gap, and an interconnect, formed on top of the at least one polymer material, electrically connecting the first and the second electrode. | 05-12-2011 |
20120056228 | LED CHIP MODULES, METHOD FOR PACKAGING THE LED CHIP MODULES, AND MOVING FIXTURE THEREOF - A method for packaging LED chip modules is provided. First, a first sacrificial layer is disposed on a substrate. Afterwards, LED chips are synchronously disposed on the first sacrificial layer before the first sacrificial layer cures. Next, a first material, a second sacrificial layer, and a second material are used to form a support layer on the first sacrificial layer. The first sacrificial layer and the second sacrificial layer are then removed, so that LED chip modules are obtained, wherein each LED chip module has a corresponding support layer. Furthermore, a moving fixture is provided to synchronously remove chips from a wafer and dispose them on the sacrificial layer. | 03-08-2012 |
20120126201 | GALLIUM NITRIDE LED DEVICES WITH PITTED LAYERS AND METHODS FOR MAKING THEREOF - Light-emitting diode device and method for making thereof. The device includes an n-type layer including a first surface and associated with a first thickness, and a pitted layer on the first surface. The pitted layer includes a second surface and associated with a second thickness ranging from 500 Å to 3000 Å. Additionally, the device includes an active layer on the second surface, the active layer being associated with a third thickness ranging from 10 Å to 20 Å, and a p-type layer on the active layer. The n-type layer is associated with a defect density at the first surface, and the defect density ranges from 1×10 | 05-24-2012 |
20120168715 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor light emitting device includes: (a) providing a temporary substrate; (b) forming a multi-layered LED epitaxial structure, having at least one light emitting unit, on the temporary substrate, wherein a first surface of the light emitting unit contacts the temporary substrate, and the light emitting unit includes a n-type layer, an active region, and a p-type layer; (c) forming a n-electrode on the n-type layer; (d) forming a p-electrode on the p-type layer; (e) bonding a permanent substrate on the light emitting unit, the n-electrode and the p-electrode; (f) removing the temporary substrate to expose the light emitting unit; and (g) etching the exposed light emitting unit, to expose at least one of the n-electrode and the p-electrode. | 07-05-2012 |
20120193652 | LED ARRAY FORMED BY INTERCONNECTED AND SURROUNDED LED CHIPS - A light emitting diode array includes a first light emitting diode having a first electrode and a second light emitting diode having a second electrode. The first and second light emitting diodes are separated. A first polymer layer is positioned between the light emitting diodes. An interconnect located at least partially on the first polymer layer connects the first electrode to the second electrode. A permanent substrate is coupled to the light emitting diodes. The permanent substrate is coupled to the side of the light emitting diodes with the interconnect. A second polymer layer at least partially encapsulates the side of the light emitting diodes opposite the permanent substrate (the side opposite the interconnect). | 08-02-2012 |
20120193653 | LED ARRAY FORMED BY INTERCONNECTED AND SURROUNDED LED CHIPS - A light emitting diode array includes a first light emitting diode having a first electrode and a second light emitting diode having a second electrode. The first and second light emitting diodes are separated. A first polymer layer is positioned between the light emitting diodes. An interconnect located at least partially on the first polymer layer connects the first electrode to the second electrode. A permanent substrate is coupled to the light emitting diodes. The permanent substrate is coupled to the side of the light emitting diodes opposite the interconnect. A second polymer layer at least partially encapsulates the side of the light emitting diodes with the interconnect. | 08-02-2012 |
20120228651 | LIGHT-EMITTING-DIODE ARRAY - A light-emitting-diode (LED) array includes a first LED unit having a first electrode and a second LED unit having a second electrode. The first LED unit and the second LED unit are positioned on a common substrate and are separated by a gap. Two or more polymer materials form a multi-layered structure in the gap. A first polymer material substantially fills a lower portion of the gap and at least one additional polymer material substantially fills a remainder of the gap above the first polymer material. A kinematic viscosity of the first polymer material is less than a kinematic viscosity of the at least one additional polymer material. An interconnect, positioned on top of the at least one additional polymer material, electrically connects the first electrode and the second electrode. | 09-13-2012 |
20120321787 | ROTATION SYSTEM FOR THIN FILM FORMATION AND METHOD THEREOF - System and method for forming one or more layers of one or more materials on one or more substrates. The system includes a rotating shell, a susceptor component supported by the rotating shell, and a driving component below the susceptor component and configured to drive the rotating shell and the susceptor component to rotate around a susceptor axis. Additionally, the system includes one or more holder gears located on the susceptor component and configured to rotate around the susceptor axis with the susceptor component and support the one or more substrates, and a central gear engaged to the one or more holder gears and configured to cause the one or more holder gears to rotate around one or more holder axes respectively if the one or more holder gears rotate around the susceptor axis. The susceptor axis is different from the one or more holder axes. | 12-20-2012 |
20120322168 | CHEMICAL VAPOR DEPOSITION APPARATUS - System and method for forming one or more materials. The system includes a susceptor component configured to rotate around a central axis, and a showerhead component that is located above the susceptor component and not in direct contact with the susceptor component. Additionally, the system includes one or more substrate holders located on the susceptor component and configured to rotate around the central axis and also rotate around corresponding holder axes respectively, and a central component. Moreover, the system includes one or more first inlets formed within the central component, one or more second inlets, and one or more third inlets formed within the showerhead component and located farther away from the central component than the one or more second inlets. | 12-20-2012 |
20130020597 | POSTS IN GLUE LAYER FOR GROUP-III NITRIDE LEDS - A semiconductor light emitting device and a method for making the semiconductor light emitting device are described. The semiconductor light emitting device includes an epitaxial structure having a first type doped layer, a light emitting layer, and a second type doped layer. The epitaxial structure may further include an undoped layer. A substrate is bonded to at least one surface of the epitaxial structure with an adhesive layer. One or more posts are located in the adhesive layer. The posts may have different widths depending on the location of the posts and/or the posts may only be located under certain portions of the epitaxial structure. | 01-24-2013 |
20130074773 | HEATING SYSTEMS FOR THIN FILM FORMATION - System for forming one or more layers of one or more materials on one or more substrates. The system includes a susceptor component configured to rotate around a susceptor axis, and at least one substrate holder located directly or indirectly on the susceptor component and configured to support the one or more substrates. The substrate holder is further configured to cause the one or more substrates to rotate around at least the susceptor axis. Additionally, the system includes at least one heating device configured to heat the one or more substrates. Each of the one or more substrates includes a substrate surface facing the heating device and associated with a bow height, and the heating device is located away from the substrate surface by a distance. For each of the one or more substrates, the distance is at least twenty times as large as the bow height. | 03-28-2013 |
20130074774 | HEATING SYSTEMS FOR THIN FILM FORMATION - A material deposition system is provided for forming one or more layers of one or more materials on one or more substrates. The system includes a susceptor component. A plurality of substrate holders are supported on or over the susceptor component. Either the susceptor component is configured to rotate around a susceptor axis, or each substrate holder is configured to rotate about a respective holder axis, or both. Heating devices heat each substrate to a substantially constant temperature relative to a radial distance of the substrate from a central point of the susceptor component substantially only through heat convection or radiation, with comparatively little, if any, heat conduction through the susceptor component and the one or more substrate holders. | 03-28-2013 |
20130102095 | Light Emitting Diodes with Smooth Surface for Reflective Electrode - A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 at a surface whereon the first electrode is formed. | 04-25-2013 |
20130105825 | LIGHT EMITTING DIODE ARRAY | 05-02-2013 |
20130133579 | GAS PREHEATING SYSTEM FOR CHEMICAL VAPOR DEPOSITION - An embodiment of this invention provides a gas preheating system for heating one or more gases used in a chemical vapor deposition. The preheating system comprises a heating module and a delivery module. The delivery module is used for passing the one or more gases, and the heating module is configured to heat the one or more gases indirectly via the delivery module. | 05-30-2013 |
20130175674 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes a p-type doped layer, an n-type doped layer, and an internal electrical connection layer that is deposited and electrically coupled between the p-type doped layer and the n-type doped layer. In one embodiment, the internal electrical connection layer includes a group IV element and a nitrogen element, and the number of atoms of the group IV element and the nitrogen element is greater than 50% of the total number of atoms in the internal electrical connection layer. In another embodiment, the internal electrical connection layer includes carbon element with a concentration greater than 10 | 07-11-2013 |
20130178046 | METHOD OF MANUFACTURING A SEMICONDUCTOR APPARATUS - A method of manufacturing a semiconductor apparatus is disclosed. A first-type doped layer, a second-type doped layer, and an internal electrical connection layer are formed. The internal electrical connection layer is deposited and electrically coupled between the first-type doped layer and the second-type doped layer. In one embodiment, the internal electrical connection layer is formed by using a group IV based precursor and nitrogen based precursor. In another embodiment, the internal electrical connection layer is formed by a mixture comprising a carbon-contained doping source, and the internal electrical connection layer has a carbon concentration greater than 10 | 07-11-2013 |
20130213299 | LIQUID TANK AND THIN FILM DEPOSITION APPARATUS USING THE SAME - A liquid tank includes at least one main tank, a supplemental tank and a transmission module. The main tank is supplied with a first liquid. The supplemental tank is supplied with a second liquid. The transmission module is connected between the supplemental tank and the at least one main tank. The transmission module is configured to supply the second liquid into the main tank while the first liquid in the main tank is lowered down to a first position, and to stop supplying the second liquid into the main tank while the first liquid in the main tank is raised up to the first position. A thin film deposition apparatus using the aforementioned liquid tank is also provided. | 08-22-2013 |
20130221321 | LIGHT-EMITTING DIODE DEVICE - A light-emitting diode (LED) device includes a first LED, a second LED, and a superlattice structure by which the first and the second LEDs are stacked. The superlattice structure has an absorption spectra, the first active layer of the first LED has a first emission spectra, and the second active layer of the second LED has a second emission spectra. The absorption spectra is located on a shorter-wavelength side of at least one of the first and the second emission spectra. | 08-29-2013 |
20130239894 | CHEMICAL VAPOR DEPOSITION APPARATUS - A chemical vapor deposition (CVD) apparatus includes at least one susceptor mounted in a non-horizontal position, and at least one holder rotatably mounted on a first surface of the susceptor for holding wafers. The holder may be rotatable around a holder axis. A showerhead may be mounted at or near a center of the susceptor. The showerhead may release a reaction gas that flows radially toward a periphery of the susceptor. The holder may have a mass center that is eccentric from the holder axis to allow movement relative to the susceptor when the susceptor rotates. | 09-19-2013 |
20130264588 | COMPACT LED PACKAGE - A light emitting package includes a base and one or more LED units coupled to the base. The LED unit includes a plurality of vertically stacked epitaxial structures. Each epitaxial structure includes at least a first doped layer, at least a light emitting layer, and at least a second doped layer. At least one luminescent element is spaced a distance from the one or more LED units. | 10-10-2013 |
20130285076 | LIGHT EMITTING DIODE DEVICE - A light emitting diode (LED) device includes at least one stacking LED unit. The stacking LED unit includes a plurality of epitaxial structures interleaved with tunnel junctions. For a given predetermined input power, the plurality of epitaxial structures may reduce an operating current density of the stacking LED unit as compared to an LED unit with a single epitaxial structure and the same horizontal size. The reduced operating current density approaches a quantum efficiency peak. Additionally, for a given predetermined input power, the stacking LED unit may operate in a current density interval corresponding to a quantum efficiency within 20% decrement of the quantum efficiency peak. | 10-31-2013 |
20130295283 | CHEMICAL VAPOR DEPOSITION APPARATUS WITH MULTIPLE INLETS FOR CONTROLLING FILM THICKNESS AND UNIFORMITY - A chemical vapor deposition system includes first inlets that are located in a gas injector. Second inlets are also located in the gas injector. A first piping branch provides a gas to the first inlets and/or the second inlets. The first piping branch provides the gas at a first flow rate to the first inlets and/or at a second flow rate to the second inlets. A second piping branch provides a gas to the first inlets and/or the second inlets. The second piping branch provides the gas at at least a third flow rate to the first inlets and/or the second inlets. | 11-07-2013 |
20140054627 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device includes a circuit board with a layout layer and a die bonding area. At least one positive endpoint, negative endpoint and function endpoint are disposed on the layout layer. At least one semiconductor light-emitting chip is disposed within the die bonding area, and is electrically coupled to the positive endpoint, the negative endpoint and the function endpoint to facilitate various connection configurations. | 02-27-2014 |
20140070261 | STACKED LED DEVICE WITH POSTS IN ADHESIVE LAYER - A semiconductor light emitting device includes a substrate and a first epitaxial structure over the substrate. The first epitaxial structure includes a first doped layer, a first light emitting layer, and a second doped layer. The first doped layer includes a first dopant type and the second doped layer includes a second dopant type. A second epitaxial structure includes a third doped layer, a second light emitting layer, and a fourth doped layer. An adhesive layer is between the first epitaxial structure and the second epitaxial structure. One or more posts are located in the adhesive layer. An electrode pattern is located on an upper surface of the second epitaxial structure, wherein the posts are located under electrodes in the electrode pattern. | 03-13-2014 |
20140080234 | LIGHT EMITTING DIODES WITH SMOOTH SURFACE FOR REFLECTIVE ELECTRODE - A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 at a surface whereon the first electrode is formed. | 03-20-2014 |
20140183566 | MULTI-CHIP LED DIODE APPARATUS - In one aspect, there is an apparatus that comprises a plurality of light emitting chips that each have active areas that have elongated aspect ratios. This chips are mounted in a generally rectangular package. The chips are each arranged around a periphery of the package so that each narrow side of each chip abuts either a sidewall forming the periphery of the package or a long side another of the chips. Some of the chips receive a biasing voltage through one or more other of the chips. | 07-03-2014 |