Patent application number | Description | Published |
20080230123 | PHOTOELECTRIC CONVERSION ELEMENT AND SOLID-STATE IMAGING DEVICE - A photoelectric conversion element comprises a first photoelectric conversion part, the first photoelectric conversion part comprising: a pair of electrodes; and a photoelectric conversion film between the pair of electrodes, wherein the photoelectric conversion film comprises an organic photoelectric conversion material having an absorption peak in an infrared region of an absorption spectrum within a combined range of a visible region and the infrared region and generating an electric charge according to light absorbed, and the first photoelectric conversion part as a whole transmits 50% or more of light in the visible region. | 09-25-2008 |
20080308149 | SQUARYLIUM DYE, METHOD OF PRODUCING THE SAME, PHOTOELECTRIC CONVERSION ELEMENT CONTAINING THE DYE, AND SOLID-STATE IMAGING DEVICE - A squarylium dye represented by formula (1): | 12-18-2008 |
20090085029 | Photoelectric conversion element and imaging device - A photoelectric conversion element is provided and includes: a conductive thin layer; an organic photoelectric conversion layer including a compound represented by formula (I); and a transparent conductive thin layer, in this order: | 04-02-2009 |
20090189058 | PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE - A photoelectric conversion element is provided and includes: an electrically conductive thin layer; an organic photoelectric conversion layer containing a compound having a partial structure represented by the following formula (I) and a fullerene or a fullerene derivative; and a transparent electrically conductive thin layer. | 07-30-2009 |
20090283758 | ORGANIC SEMICONDUCTOR, PHOTOELECTRIC CONVERSION ELEMENT AND IMAGE DEVICE - An organic semiconductor includes: a compound represented by formula (I): | 11-19-2009 |
20100244030 | PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE - A photoelectric conversion element includes, in the following order: a substrate; a lower electrode; a photoelectric conversion layer; and an upper electrode comprising a transparent electrode material, the photoelectric conversion element further includes a stress relieving layer provided between the upper electrode and the photoelectric conversion layer, and the stress relieving layer includes a crystal layer capable of relieving a stress of the transparent electrode material. | 09-30-2010 |
20100308311 | PHOTOELECTRIC CONVERSION DEVICE AND IMAGING DEVICE - Provided is a photoelectric conversion device comprising a transparent electrically conductive film, a photoelectric conversion film, and an electrically conductive film, wherein the photoelectric conversion film contains a compound represented by the following formula (i): | 12-09-2010 |
20100308312 | PHOTOELECTRIC CONVERSION DEVICE, PRODUCTION METHOD THEREOF AND IMAGING DEVICE - Provided is a photoelectric conversion device comprising an electrically conductive film, a photoelectric conversion film, and a transparent electrically conductive film, wherein said photoelectric conversion film contains a crystallized fullerene or fullerene derivative, and said crystallized fullerene or fullerene derivative is oriented in the (111) direction perpendicularly to the film surface of said electrically conductive film. | 12-09-2010 |
20100308372 | PHOTOELECTRIC CONVERSION DEVICE, PRODUCTION METHOD THEREOF AND IMAGING DEVICE - Provided is a photoelectric conversion device comprising an electrically conductive film, a photoelectric conversion film, and a transparent electrically conductive film, wherein the photoelectric conversion film contains a fullerene or a fullerene derivative and a photoelectric conversion material having an absorption spectrum satisfying at least either the following condition (A) or (B): | 12-09-2010 |
20110049492 | PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE - A photoelectric conversion element includes, in the following order: a substrate; a lower electrode containing titanium nitride; an organic layer including a photoelectric conversion layer; and an upper electrode containing a transparent electrode material. | 03-03-2011 |
20110056562 | PHOTOELECTRIC CONVERSION MATERIAL, FILM CONTAINING THE MATERIAL, PHOTOELECTRIC CONVERSION DEVICE, PRODUCTION METHOD THEREOF, PHOTOSENSOR, IMAGING DEVICE AND THEIR USE METHODS - A compound represented by the following formula (I), and a photoelectric conversion device containing the compound: | 03-10-2011 |
20110194000 | PHOTOELECTRIC CONVERSION ELEMENT AND SOLID-STATE IMAGING DEVICE - A photoelectric conversion element includes a pair of electrodes, a photoelectric conversion layer, a charge blocking layer, an intermediate layer. The photoelectric conversion layer contains an organic material between the electrodes. The charge blocking layer is disposed between the photoelectric conversion layer and one of the electrodes. The intermediate layer includes an organic compound disposed between the photoelectric conversion layer and the charge blocking layer and having a glass transition temperature of 200° C. or higher. | 08-11-2011 |
20110204208 | PHOTOELECTRIC CONVERSION DEVICE, IMAGING DEVICE, METHOD FOR MANUFACTURING IMAGING DEVICE, AND IMAGING APPARATUS - An organic photoelectric conversion device having: a first electrode; a second electrode opposing to the first electrode; and an organic material-containing photoelectric conversion layer provided between the first electrode and the second electrode, wherein an electron spin number of the photoelectric conversion layer is not more than 1.0×10 | 08-25-2011 |
20110233701 | PHOTOELECTRIC CONVERSION DEVICE AND SOLID-STATE IMAGING DEVICE - A photoelectric conversion device comprising a photoelectric conversion part including a first electrode layer, a second electrode layer and a photoelectric conversion layer provided between the first electrode layer and the second electrode layer, wherein light is made incident from an upper part of the second electrode layer into the photoelectric conversion layer; the photoelectric conversion layer generates a charge containing an electron and a hole corresponding to the incident light from the upper part of the second electrode layer; and the first electrode layer works as an electrode for extracting the hole. | 09-29-2011 |
20120025179 | PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE - A photoelectric conversion element includes: an electrically conductive thin layer; an organic photoelectric conversion layer containing a compound having a partial structure represented by formula (I) and a fullerene or a fullerene derivative; and a transparent electrically conductive thin layer: | 02-02-2012 |
20120074513 | PHOTOELECTRIC CONVERSION ELEMENT, SOLID-SATE IMAGING ELEMENT, IMAGING APPARATUS, AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT - A photoelectric conversion element includes an insulating film, a first electrode, a light receiving layer, and a second electrode. The first electrode is formed on the insulating film and is made of titanium oxynitride. The light receiving layer is formed on the first electrode and includes an organic material. A composition of the first electrode just before forming the light receiving layer meets (1) a requirement that an amount of oxygen contained in the whole of the first electrode is 75 atm % or more of an amount of titanium, or (2) a requirement that in a range of from the substrate side of the first electrode to 10 nm or a range of from the substrate side of the first electrode to ⅔ of the thickness of the first electrode, an amount of oxygen is 40 atm % or more of an amount of titanium. | 03-29-2012 |
20120298846 | PHOTOELECTRIC ELEMENT AND IMAGING DEVICE AND DRIVING METHODS THEREFOR - A photoelectric element includes a conductive layer, an organic photoelectric layer, a blocking layer and a transparent conductive layer, the organic photoelectric layer contains a p type organic photoelectric material having a glass transition temperature of 100° C. or higher and forms an amorphous layer, and the blocking layer contains a blocking material having a glass transition temperature of 140° C. or higher. | 11-29-2012 |
20130069047 | PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE - A photoelectric conversion element is provided and includes: an electrically conductive thin layer; an organic photoelectric conversion layer; and a transparent electrically conductive thin layer. The organic photoelectric conversion layer contains: a compound represented by formula (I); and a fullerene or a fullerene derivative. | 03-21-2013 |
20130122276 | PHOTOELECTRIC CONVERSION DEVICE, PRODUCTION METHOD THEREOF, PHOTOSENSOR, IMAGING DEVICE AND THEIR DRIVE METHODS - A photoelectric conversion device comprising a transparent electrically conductive film, a photoelectric conversion film and an electrically conductive film in this order, wherein the photoelectric conversion film comprises a photoelectric conversion layer, and an electron blocking layer, wherein the electron blocking layer contains a compound represented by the specific formula. | 05-16-2013 |
20140054577 | PHOTOELECTRIC CONVERSION ELEMENT AND SOLID-STATE IMAGING DEVICE - A photoelectric conversion element comprises a first photoelectric conversion part, the first photoelectric conversion part comprising: a pair of electrodes; and a photoelectric conversion film between the pair of electrodes, wherein the photoelectric conversion film comprises an organic photoelectric conversion material having an absorption peak in an infrared region of an absorption spectrum within a combined range of a visible region and the infrared region and generating an electric charge according to light absorbed, and the first photoelectric conversion part as a whole transmits 50% or more of light in the visible region. | 02-27-2014 |
20140239156 | PHOTOELECTRIC CONVERSION ELEMENT AND SOLID-STATE IMAGE PICKUP DEVICE - A photoelectric conversion element comprises a photoelectric conversion section that includes: a pair of electrodes; and a photoelectric conversion layer disposed between the pair of electrodes, wherein the photoelectric conversion section further comprises between one of the pair of electrodes and the photoelectric conversion layer a first charge-blocking layer that restrains injection of charges from the one of the electrodes into the photoelectric conversion layer when a voltage is applied to the pair of electrodes, and the first charge-blocking layer comprises a plurality of layers. | 08-28-2014 |