Patent application number | Description | Published |
20080213998 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR MANUFACTURING APPARATUS AND STORAGE MEDIUM FOR EXECUTING THE METHOD - The semiconductor device manufacturing method includes forming an alloy film of copper and an additive metal along a wall surface of a recess portion of an interlayer insulating film in a surface of a substrate; forming a barrier layer made of a compound of the additive metal and a constituent element of the interlayer insulating film; heating the substrate under an atmosphere containing an organic acid, an organic acid anhydride, or ketones to precipitate surplus additive metal onto a surface of the alloy film; and burying copper in the recess portion after heating the substrate. Since the organic acid, the organic acid anhydride, and the ketones have a reducing power for Cu, an oxidation of Cu in the alloy film is suppressed while a barrier layer made of a compound of the additive metal and a constituent element of the insulating film is formed. | 09-04-2008 |
20090075475 | METHOD OF SUBSTRATE TREATMENT, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, SUBSTRATE TREATING APPARATUS, AND RECORDING MEDIUM - Substrate processing apparatus | 03-19-2009 |
20090087995 | METHOD OF SUBSTRATE TREATMENT, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, SUBSTRATE TREATING APPARATUS, AND RECORDING MEDIUM - Substrate processing apparatus | 04-02-2009 |
20090163038 | HEAT TREATMENT METHOD, HEAT TREATMENT APPARATUS AND SUBSTRATE PROCESSING APPARATUS - Disclosed is a heat treatment unit | 06-25-2009 |
20090324827 | CVD FILM FORMING METHOD AND CVD FILM FORMING APPARATUS - A wafer W is arranged on a susceptor | 12-31-2009 |
20090325393 | HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS - Disclosed is a heat treatment method including a step of placing a wafer W provided with a low-k film and a metal layer in a heat treatment furnace | 12-31-2009 |
20100108108 | SUBSTRATE MOUNTING TABLE, SUBSTRATE PROCESSING APPARATUS AND METHOD FOR TREATING SURFACE OF SUBSTRATE MOUNTING TABLE - A substrate mounting table includes a mounting table main body whose top surface and side surface are covered with an upper cover member. Surface treatment is performed partially to a substrate surrounding region disposed outside a substrate mounting region on a top surface of the upper cover member, so that the substrate surrounding region is smoother than the substrate mounting region. The substrate mounting region is covered by a wafer when the wafer is mounted thereon. Thus, for instance, a metal component generated upon removal of a metal oxide film from the substrate is not easily adhered on the mounting table, and is easily removed if adhered. | 05-06-2010 |
20100316799 | FILM FORMING METHOD AND FILM FORMING APPARATUS - Disclosed is a film forming method including the steps of: producing a monovalent carboxylic acid metal salt gas by reacting a bivalent carboxylic acid metal salt with a carboxylic acid; supplying the monovalent carboxylic acid metal salt gas on a substrate to accumulate a monovalent carboxylic acid metal salt film; and decomposing the monovalent carboxylic acid metal salt film by supplying energy to the substrate formed with the monovalent carboxylic acid metal salt film so as to form a metallic film. | 12-16-2010 |
20120091588 | BARRIER LAYER, FILM FORMING METHOD, AND PROCESSING SYSTEM - There is provided a film forming method for forming a film on a target object having thereon an insulating layer | 04-19-2012 |
Patent application number | Description | Published |
20090042384 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND TARGET SUBSTRATE PROCESSING SYSTEM - A semiconductor device manufacturing method includes removing copper deposits, by use of an organic acid gas and an oxidizing gas, from a surface of a second interlayer insulation film having a groove formed therein and reaching a copper-containing electric connector member. The second interlayer insulation film is disposed on a first interlayer insulation film provided with the electric connector member. The method then includes reducing a surface of the electric connector member exposed at a bottom of the groove of the second interlayer insulation film; forming a barrier layer on the second interlayer insulation film; and forming a copper-containing conductive film to fill the groove of the second interlayer insulation film. | 02-12-2009 |
20090042397 | COPPER RE-DEPOSITION PREVENTING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SUBSTRATE PROCESSING APPARATUS - A copper re-deposition preventing method includes placing inside a chamber a target substrate with a film including a copper-containing substance and formed thereon, and performing removal of the copper-containing substance from the target substrate placed inside the chamber, by dry cleaning using an organic compound. Then, the method includes unloading from the chamber the target substrate processed by the removal of the copper-containing substance, and depositing a coating film inside the chamber, in which the target substrate processed by the removal of the copper-containing substance is no longer present, thereby covering copper-containing scattered particles left inside the chamber. | 02-12-2009 |
20090204252 | SUBSTRATE PROCESSING METHOD AND APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND STORAGE MEDIUM - A substrate processing method includes a first step of forming a metal complex by allowing a processing gas containing an organic compound to be adsorbed by a metal layer formed on a target substrate while setting the target substrate to be kept at a first temperature, and a second step of sublimating the metal complex by heating the target substrate to maintain it at a second temperature higher than the first temperature. | 08-13-2009 |
20100029086 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND STORAGE MEDIUM - A semiconductor device having high reliability is provided by reducing fluorine remaining in a metal forming the semiconductor device. Specifically disclosed is a method for manufacturing a semiconductor device including a fluoride removal step for removing a metal fluoride produced on a metal forming an electrode or wiring of a semiconductor device which is formed on a substrate to be processed. This method for manufacturing a semiconductor device is characterized in that the metal fluoride is removed by supplying formic acid in a gaseous state to the substrate to be processed in the fluoride removal step. | 02-04-2010 |
20110265950 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND TARGET SUBSTRATE PROCESSING SYSTEM - A semiconductor device manufacturing method includes removing copper deposits, by use of an organic acid gas and an oxidizing gas, from a surface of a second interlayer insulation film having a groove formed therein and reaching a copper-containing electric connector member. The second interlayer insulation film is disposed on a first interlayer insulation film provided with the electric connector member. The method then includes reducing a surface of the electric connector member exposed at a bottom of the groove of the second interlayer insulation film; forming a barrier layer on the second interlayer insulation film; and forming a copper-containing conductive film to fill the groove of the second interlayer insulation film. | 11-03-2011 |
20120006782 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A substrate processing method for removing a copper oxide film on a surface of Cu and a Cu-containing residue adhered to an interlayer insulating film in a Cu wiring structure on a substrate by using an organic acid-containing gas is provided. The substrate processing method includes removing the Cu-containing residue by etching by supplying the substrate with a processing gas containing an organic acid gas, after the temperature of the substrate is set to be maintained at a first temperature; and removing the copper oxide film on the surface of Cu by means of a reduction reaction by supplying the substrate with the processing gas containing the organic acid gas, after the temperature of the substrate is set to be maintained at a second temperature that is higher than the first temperature. | 01-12-2012 |
20120114869 | FILM FORMING METHOD - Disclosed is a film-forming method wherein a manganese-containing film is formed on a substrate having a surface to which an insulating film and a copper wiring line are exposed. The film-forming method includes forming a manganese-containing film on the copper wiring line by a CVD method which uses a manganese compound. | 05-10-2012 |
20120135612 | FILM FORMING METHOD, PRETREATMENT DEVICE, AND PROCESSING SYSTEM - A film forming method is disclosed in which a thin film comprising manganese is formed on an object to be processed which has, on a surface thereof, an insulating layer constituted of a low-k film and having a recess. The method comprises a hydrophilization step in which the surface of the insulating layer is hydrophilized to make the surface hydrophilic and a thin-film formation step in which a thin film containing manganese is formed on the surface of the hydrophilized insulating layer by performing a film forming process using a manganese-containing material gas on the surface of the hydrophilized insulating layer. Thus, a thin film comprising manganese, e.g., an MnOx film, is effectively formed on the surface of the insulating layer constituted of a low-k film, which has a low dielectric constant. | 05-31-2012 |
20120251721 | DEVICE AND METHOD FOR FORMING FILM - The present disclosure relates to a film forming apparatus for forming a thin film on a surface of an object to be processed by using an organic metal raw material gas within a processing chamber configured to exhaust air, wherein a hydrophobic layer is installed on a surface of a member exposed to the atmosphere within the processing chamber. | 10-04-2012 |
20130306597 | PROCESSING APPARATUS AND METHOD FOR PROCESSING METAL FILM - A method for processing a metal film includes adiabatically expanding a mixed gas including an oxidation gas, a complexing gas and a rare gas in a processing chamber having a vacuum exhaust device such that a gas cluster beam is generated in the processing chamber, and irradiating the gas cluster beam upon a metal film formed on a surface of a workpiece in the processing chamber such that the gas cluster beam collides on the metal film including a metal element and the metal film is etched. The mixed gas includes the oxidation gas which oxidizes the metal element and forms an oxide, and the complexing gas which reacts with the oxide and forms an organometallic complex | 11-21-2013 |
20140008326 | PLASMA GENERATION DEVICE, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma generation device has a microwave generation device which generates microwave, a waveguide tube having hollow interior and connected to the microwave device such that the tube has longitudinal direction in transmission direction of microwave and rectangular cross section in direction orthogonal to the transmission direction, a phase-shifting device which cyclically shifts phase of standing wave generated in the tube by microwave, and a gas supply device which supplies processing gas into the tube. The tube has antenna portion having one or more slot holes which release plasma generated by microwave to the outside, the slot hole is formed on wall forming short or long side of the antenna portion, and the tube plasmatizes the gas in atmospheric pressure state supplied into the tube by the microwave in the slot hole and releases the plasma to the outside from the slot hole. | 01-09-2014 |
20140117551 | PROCESSING SYSTEM FOR FORMING FILM ON TARGET OBJECT - A processing system for forming a film on a target object having thereon an insulating layer that is made of a low-k film and having a recess is provided. The processing system comprises: a processing apparatus configured to form a first-metal-containing film containing a first metal on a surface of the target object; a processing apparatus configured to form a second-metal-containing film containing Mn as a second metal having a barrier property against a filling metal to be filled in the recess; a processing apparatus configured to form a thin film made of a third metal as the filling metal to be filled; a common transfer chamber connected with each of the processing apparatuses; a transfer unit for transferring the target object into each of the processing apparatuses; and a system controller that controls the whole processing system so as to perform a film forming method. | 05-01-2014 |
20140290857 | SUBSTRATE PROCESSING APPARATUS - In a method for forming a stacked substrate of a MOS (Metal Oxide Semiconductor) structure including an oxide film serving as a gate insulating film formed on a semiconductor material layer having a film or substrate shape; and a conductive film serving as a gate electrode formed on the oxide film, a polysilane film on the semiconductor material layer is formed by coating a polysilane solution on a surface of a substrate to which the semiconductor material layer is exposed. A film containing metal ions is formed on the polysilane film by coating a metal salt solution thereon, and the polysilane film and the film containing metal ions are respectively modified into a polysiloxane film and a film containing fine metal particles to form the stacked substrate. | 10-02-2014 |
20150056381 | METHOD FOR FORMING CONDUCTIVE FILM - A method for forming a conductive film on a substrate includes forming a precursor-containing film on the substrate; and irradiating plasma of a treatment gas to the precursor-containing film by an atmospheric pressure plasma treatment device, removing the organic substances and forming a conductive film from the metallic fine particles or the metallic compounds, the atmospheric pressure plasma treatment device including: a microwave generator, a hollow waveguide, a gas supply device, and an antenna portion configured to discharge to the outside, whereby the treatment gas being converted to plasma by the microwaves, the plasma thus generated being irradiated to the precursor-containing film on the substrate, and a hydrogen radical density of the plasma at a position spaced apart 7 mm from the slot holes being equal to or higher than 2×10 | 02-26-2015 |
Patent application number | Description | Published |
20120064708 | FILM FORMING METHOD, SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF AND SUBSTRATE PROCESSING APPARATUS THEREFOR - In a method for forming a stacked substrate of a MOS (Metal Oxide Semiconductor) structure including an oxide film serving as a gate insulating film formed on a semiconductor material layer having a film or substrate shape; and a conductive film serving as a gate electrode formed on the oxide film, a polysilane film on the semiconductor material layer is formed by coating a polysilane solution on a surface of a substrate to which the semiconductor material layer is exposed. A film containing metal ions is formed on the polysilane film by coating a metal salt solution thereon, and the polysilane film and the film containing metal ions are respectively modified into a polysiloxane film and a film containing fine metal particles to form the stacked substrate. | 03-15-2012 |
20120068603 | PLASMA GENERATING APPARATUS, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - An apparatus for generating plasma, comprises: a microwave generator configured to generate a microwave; a wave guide which is connected to the microwave generator, wherein the wave guide is elongated in a traveling direction of the microwave and has a hollow shape having a rectangular section in a direction perpendicular to the traveling direction; a gas feeder which is connected to the wave guide and feeds process gas into the wave guide; and an antenna unit which is a part of the wave guide and discharges plasma generated by the microwave to the outside, wherein the antenna unit has one or more slots formed on a wall constituting a short side in a section of the antenna unit, plasmarizes the process gas fed into the wave guide under an atmospheric pressure in the slots by the microwave, and discharges the plasma out of the slots. | 03-22-2012 |
20130017328 | FILM FORMING METHOD AND FILM FORMING APPARATUS - A film forming method includes a step of arranging a wafer, on which an insulating film is formed, in a processing chamber of a film forming apparatus and a surface modification step of supplying a compound gas containing silicon atoms and an OH group-donating gas into the processing chamber so that Si—OH groups are formed on the surface of the insulating film. The film forming method further includes a film forming step of supplying a film forming gas containing a manganese-containing material into the processing chamber so that a manganese-containing film is formed on the surface of the insulating film on which the Si—OH groups have been formed through a CVD method. | 01-17-2013 |
20140190409 | DEVICE AND METHOD FOR FORMING FILM - The present disclosure relates to a film forming apparatus for forming a thin film on a surface of an object to be processed by using an organic metal raw material gas within a processing chamber configured to exhaust air, wherein a hydrophobic layer is installed on a surface of a member exposed to the atmosphere within the processing chamber. | 07-10-2014 |