Stadtmueller
Klaus Stadtmueller, Alzenau DE
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20090082586 | PROCESS FOR PREPARING MONOCHLOROETHYLENE CARBONATE AND SUBSEQUENT CONVERSION TO VINYLENE CARBONATE - Processes for preparing monochloroethylene carbonate include reacting ethylene carbonate with chlorine gas in a liquid phase under irradiation of UV light and introducing a separate feed of an inert gas into the liquid phase. Monochloroethylene carbonate may be subsequently converted to vinylene carbonate. | 03-26-2009 |
20090312545 | PROCESS FOR PREPARING TRIALLYL ISOCYANURATE (TAIC) - The invention is directed to an improved, reliably performable process for preparing triallyl isocyanurate (TAIC) by Cu | 12-17-2009 |
Lyndsey Stadtmueller, Dingman'S Ferry, PA US
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20120130163 | Biliary Catheter Systems Including Stabilizing Members - Medical devices including devices and systems for endoscopic interventions that may access the biliary tree. An example biliary catheter system may include an endoscope having a working channel formed therein. An endoscopic instrument may be disposed in the channel. The endoscopic instrument may have a tool channel formed therein, a distal end, and a plurality of stabilizing members extending from the distal end. The plurality of stabilizing members may be configured to surround the ampulla of Vater during a biliary tract intervention. | 05-24-2012 |
Michael Stadtmueller, Dresden DE
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20080251815 | Method for manufacturing a transistor - The present invention relates to a transistor comprising a gate channel area and a gate stack having mechanical stress arranged on the gate channel area. | 10-16-2008 |
Michael Stadtmueller, Villach AT
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20120181656 | Semiconductor Device and Method of Manufacturing Thereof - A method for manufacturing a semiconductor device and a semiconductor device are disclosed. The method comprises forming a trench in a substrate, partially filling the trench with a first semiconductive material, forming an interface along a surface of the first semiconductive material, and filling the trench with a second semiconductive material. The semiconductor device includes a first electrode arranged along sidewalls of a trench and a dielectric arranged over the first electrode. The semiconductor device further includes a second electrode at least partially filling the trench, wherein the second electrode comprises an interface within the second electrode. | 07-19-2012 |
20140145305 | Capacitor and Method of Forming a Capacitor - A method for manufacturing a semiconductor device and a semiconductor device are disclosed. The method comprises forming a trench in a substrate, partially filling the trench with a first semiconductive material, forming an interface along a surface of the first semiconductive material, and filling the trench with a second semiconductive material. The semiconductor device includes a first electrode arranged along sidewalls of a trench and a dielectric arranged over the first electrode. The semiconductor device further includes a second electrode at least partially filling the trench, wherein the second electrode comprises an interface within the second electrode. | 05-29-2014 |
Stefan Stadtmueller, Muelheim DE
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20100154682 | HYDROPHOBIZED CEMENT-CONTAINING COMPOSITIONS - The present invention relates to cement-containing compositions which are characterized in that they have a proportion of organosilicon compounds of greater than 0.15% by weight, based on the proportion of cement, the organosilicon compounds being based on at least one organosilicon compound selected from the group consisting of the alkoxysilanes and at least one selected from the group consisting of the alkoxysiloxanes, to a process for the preparation thereof and to the use thereof. | 06-24-2010 |
Stefan Stadtmueller, Mulheim An Der Ruhr DE
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20130214211 | COMPOSITION MADE OF POLYMERS AND ELECTRICALLY CONDUCTIVE CARBON - Polymer compositions which are antistatic or have been made conductive and the production thereof. | 08-22-2013 |
Uwe Stadtmueller, Kuenzelsau DE
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20120205350 | METHOD AND DEVICE FOR WELDING PARTS WITH SPOT CONTACT OR SHORT LINE CONTACT IN THE JOINING REGION AND JOINING DEVICE - Parts are welded by way of a laser beam, wherein the parts are oriented and fixed relative to each other, a laser beam is introduced into an upper part from above and centered relative to a joint point and fuses only the inner region directly above the joint point, while the upper part and the lower part are pressed against each other and therefore move toward one another, wherein the fused region of the upper part penetrates the material of the particular lower part, which has likewise fused in the meantime. Laser welding makes it possible to weld the parts so as to form products having nearly any type of geometry with much less effort than with resistance welding or capacitor discharge welding. The welding device needs only hold and fix the parts to be welded, and apply the slight surface pressure required. | 08-16-2012 |