Patent application number | Description | Published |
20080305612 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device such as a flash memory includes a semiconductor substrate, two gate insulating films formed on the substrate so as to have a first film thickness and a second film thickness smaller than the first film thickness respectively, and a polycrystalline silicon film formed on the gate insulating films so that parts of the polycrystalline silicon film on the respective gate insulating films are on a level with each other and serving as a gate electrode. The substrate is formed with a recess defined by a bottom and sidewalls substantially perpendicular to the bottom, the recess corresponding to the part of the gate insulating film with the first film thickness. | 12-11-2008 |
20090014771 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device including a semiconductor substrate; a plurality of memory cell transistors aligned in a predetermined direction on the semiconductor substrate, each memory cell transistor provided with a first gate electrode including a floating gate electrode comprising a polycrystalline silicon layer of a first thickness, a control gate electrode provided above the floating gate electrode, and an inter-gate insulating film between the floating and the control gate electrode; a pair of select gate transistors on the semiconductor substrate with a pair of second gate electrodes neighboring in alignment with the first gate electrode, each second gate electrode including a lower-layer gate electrode comprising the polycrystalline silicon layer of the first thickness, an upper-layer gate electrode provided above the lower-layer gate electrode; a polyplug of the first thickness situated between the second gate electrodes of the pair of select gate transistors; and a metal plug provided on the polyplug. | 01-15-2009 |
20090081846 | METHOD OF FABRICATING SEMICONDUCTOR MEMORY DEVICE - A method of fabricating a semiconductor device includes applying a coating oxide film to a surface of a substrate including a semiconductor substrate so that a recess formed in the surface is filled with the coating oxide film, applying a steam oxidation treatment to the substrate at a first temperature, soaking the substrate in heated water while applying a megasonic wave to the substrate in the heated water, and applying a steam oxidation treatment to the substrate at a second temperature higher than the first temperature. | 03-26-2009 |
20090140316 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor memory device includes an insulating film formed on a semiconductor substrate, a plurality of active areas formed on the insulating film from a semiconductor layer which is formed integrally with the substrate through openings of the insulating film, the active areas being formed by being divided into a striped shape by a plurality of trenches reaching an upper surface of the insulating film, the active areas having upper surfaces and sides respectively, a first gate insulating film formed so as to cover the upper surfaces and sides of the active areas, a charge trap layer having a face located on the first gate insulating film and confronting the upper surfaces and the sides of the active areas with the first gate insulating film being interposed therebetween, a second gate insulating film formed on the charge trap layer, and a gate electrode formed on the second gate insulating film. | 06-04-2009 |
20090267177 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device includes a semiconductor substrate including a semiconductor region surrounded with an element isolation region, a first insulating film formed on the semiconductor region, a pair of resistance elements located at the semiconductor region, each resistance element including a first conductive film formed on the first insulating film, a second insulating film formed on the first conductive film and a second conductive film formed on the second insulating film, a pair of first contact plugs formed on one of the resistance elements and arranged along a first direction relative to the semiconductor region, and a pair of second contact plugs formed on the other resistance element and arranged along the first direction. A first width of the resistance element is a second direction which is perpendicular to the first direction is smaller than half of a second width of the semiconductor region in the second direction. | 10-29-2009 |
20100093143 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device including a semiconductor substrate; a plurality of memory cell transistors aligned in a predetermined direction on the semiconductor substrate, each memory cell transistor provided with a first gate electrode including a floating gate electrode comprising a polycrystalline silicon layer of a first thickness, a control gate electrode provided above the floating gate electrode, and an inter-gate insulating film between the floating and the control gate electrode; a pair of select gate transistors on the semiconductor substrate with a pair of second gate electrodes neighboring in alignment with the first gate electrode, each second gate electrode including a lower-layer gate electrode comprising the polycrystalline silicon layer of the first thickness, an upper-layer gate electrode provided above the lower-layer gate electrode; a polyplug of the first thickness situated between the second gate electrodes of the pair of select gate transistors; and a metal plug provided on the polyplug. | 04-15-2010 |
20100105189 | METHOD OF FABRICATING SEMICONDUCTOR MEMORY DEVICE - A method of fabricating a semiconductor device includes applying a coating oxide film to a surface of a substrate including a semiconductor substrate so that a recess formed in the surface is filled with the coating oxide film, applying a steam oxidation treatment to the substrate at a first temperature, soaking the substrate in heated water while applying a megasonic wave to the substrate in the heated water, and applying a steam oxidation treatment to the substrate at a second temperature higher than the first temperature. | 04-29-2010 |
20130140644 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device involves process for forming gate insulating films of different thickness on a semiconductor substrate, depositing films that constitute a gate electrode, removing the gate insulating films having different thickness formed on an impurity diffusion region surface of a transistor including the gate electrode, and doping impurities into a portion where the gate insulating film is removed. | 06-06-2013 |
Patent application number | Description | Published |
20080283896 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE WITH TWIN-WELL - A nonvolatile semiconductor memory device includes a first well of a first conductivity type, which is formed in a semiconductor substrate of the first conductivity type, a plurality of memory cell transistors that are formed in the first well, a second well of a second conductivity type, which includes a first part that surrounds a side region of the first well and a second part that surrounds a lower region of the first well, and electrically isolates the first well from the semiconductor substrate, and a third well of the second conductivity type, which is formed in the semiconductor substrate. The third well has a less depth than the second part of the second well. | 11-20-2008 |
20090026527 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - According to an aspect of the present invention, there is provided a method for manufacturing a semiconductor device including: sequentially forming a first insulating film, a first electrode film, a second insulating film, and a second electrode film on a substrate; forming a groove that separates the second electrode film, the second insulating film and the first electrode film; forming an insulating film inside the groove so that an upper surface thereof is positioned between upper surfaces of the second electrode film and the second insulating film; forming an overhung portion on the second electrode film so as to overhang on the insulating film by performing a selective growth process; and forming a low resistance layer at the overhung portion and the second electrode film by performing an alloying process. | 01-29-2009 |
20090256190 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - According to an aspect of the present invention, there is provided a semiconductor device including: a semiconductor substrate; active areas with island-like shapes formed on the semiconductor substrate; an element isolation area surrounding the active areas and including an element isolation groove formed on the semiconductor substrate and an element isolation film embedded into the element isolation groove; gate insulating films each formed on corresponding one of the active areas and having a first end portion that overhangs from the corresponding active area onto the element isolation area at one side and a second end portion that overhangs from the corresponding active area onto the element isolation area at the other side, wherein an overhang of the first end portion has a different length from a length of an overhang of the second end portion. | 10-15-2009 |
20090298254 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - In a semiconductor device manufacturing method, a surface of a substrate structure including a semiconductor layer is covered with a first film including first and second openings. The first opening is configured as an alignment mark. The second opening is configured as an opening for introducing an impurity into a first predetermined position of the semiconductor layer. In this method, a third opening is formed in the first film, using a photo mask aligned with the first opening used as an alignment mark. The third opening is configured as an opening for introducing an impurity into a second predetermined position of the semiconductor layer. | 12-03-2009 |
20110254097 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE WITH TWIN-WELL - A nonvolatile semiconductor memory device includes a first well of a first conductivity type, which is formed in a semiconductor substrate of the first conductivity type, a plurality of memory cell transistors that are formed in the first well, a second well of a second conductivity type, which includes a first part that surrounds a side region of the first well and a second part that surrounds a lower region of the first well, and electrically isolates the first well from the semiconductor substrate, and a third well of the second conductivity type, which is formed in the semiconductor substrate. The third well has a less depth than the second part of the second well. | 10-20-2011 |